Signatures of Topological Superconductors

Topological superconductors are particularly interesting in light of the active ongoing experimental efforts for realizing exotic physics such as Majorana zero modes. These systems have excitations with non-Abelian exchange statistics, which provides a path towards topological quantum information processing. Intrinsic topological superconductors are quite rare in nature. However, one can engineer topological superconductivity by inducing effective p-wave pairing in materials which can be grown in the laboratory. One possibility is to induce the proximity effect in topological insulators; another is to use hybrid structures of superconductors and semiconductors.

The proposal of interfacing s-wave superconductors with quantum spin Hall systems provides a promising route to engineered topological superconductivity. Given the exciting recent progress on the fabrication side, identifying experiments that definitively expose the topological superconducting phase (and clearly distinguish it from a trivial state) raises an increasingly important problem. With this goal in mind, we proposed a detection scheme to get an unambiguous signature of topological superconductivity, even in the presence of ordinarily detrimental effects such as thermal fluctuations and quasiparticle poisoning. We considered a Josephson junction built on top of a quantum spin Hall material. This system allows the proximity effect to turn edge states in effective topological superconductors. Such a setup is promising because experimentalists have demonstrated that supercurrents indeed flow through quantum spin Hall edges. To demonstrate the topological nature of the superconducting quantum spin Hall edges, theorists have proposed examining the periodicity of Josephson currents respect to the phase across a Josephson junction. The periodicity of tunneling currents of ground states in a topological superconductor Josephson junction is double that of a conventional Josephson junction. In practice, this modification of periodicity is extremely difficult to observe because noise sources, such as quasiparticle poisoning, wash out the signature of topological superconductors. For this reason, We propose a new, relatively simple DC measurement that can compellingly reveal topological superconductivity in such quantum spin Hall/superconductor heterostructures. More specifically, We develop a general framework for capturing the junction's current-voltage characteristics as a function of applied magnetic flux. Our analysis reveals sharp signatures of topological superconductivity in the field-dependent critical current. These signatures include the presence of multiple critical currents and a non-vanishing critical current for all magnetic field strengths as a reliable identification scheme for topological superconductivity.

This system becomes more interesting as interactions between electrons are involved. By modeling edge states as a Luttinger liquid, we find conductance provides universal signatures to distinguish between normal and topological superconductors. More specifically, we use renormalization group methods to extract universal transport characteristics of superconductor/quantum spin Hall heterostructures where the native edge states serve as a lead. Interestingly, arbitrarily weak interactions induce qualitative changes in the behavior relative to the free-fermion limit, leading to a sharp dichotomy in conductance for the trivial (narrow superconductor) and topological (wide superconductor) cases. Furthermore, we find that strong interactions can in principle induce parafermion excitations at a superconductor/quantum spin Hall junction.

As we identify the existence of topological superconductor, we can take a step further. One can use topological superconductor for realizing Majorana modes by breaking time reversal symmetry. An advantage of 2D topological insulator is that networks required for braiding Majoranas along the edge channels can be obtained by adjoining 2D topological insulator to form corner junctions. Physically cutting quantum wells for this purpose, however, presents technical challenges. For this reason, I propose a more accessible means of forming networks that rely on dynamically manipulating the location of edge states inside of a single 2D topological insulator sheet. In particular, I show that edge states can effectively be dragged into the system's interior by gating a region near the edge into a metallic regime and then removing the resulting gapless carriers via proximity-induced superconductivity. This method allows one to construct rather general quasi-1D networks along which Majorana modes can be exchanged by electrostatic means.

Apart from 2D topological insulators, Majorana fermions can also be generated in other more accessible materials such as semiconductors. Following up on a suggestion by experimentalist Charlie Marcus, I proposed a novel geometry to create Majorana fermions by placing a 2D electron gas in proximity to an interdigitated superconductor-ferromagnet structure. This architecture evades several manufacturing challenges by allowing single-side fabrication and widening the class of 2D electron gas that may be used, such as the surface states of bulk semiconductors. Furthermore, it naturally allows one to trap and manipulate Majorana fermions through the application of currents. Thus, this structure may lead to the development of a circuit that enables fully electrical manipulation of topologically-protected quantum memory. To reveal these exotic Majorana zero modes, I also proposed an interference scheme to detect Majorana fermions that is broadly applicable to any 2D topological superconductor platform.

Photoelectrochemistry of GaAs and Si liquid junctions

A quantitative study has been performed on the stability of GaAs surfaces in a 0.10 M K₂Se-0.01 M K₂Se₂ aqueous solution. In this electrolyte, n-type GaAs electrodes displayed significant photocorrosion in competition with faradaic charge transfer to Se^2-. Chemisorption of group VIIIB metal ions onto the GaAs surfaces yielded improved current-voltage behavior of the GaAs photoanodes, and also resulted in a significant reduction in photocorrosion. This behavior implies that the chemisorbed metal ions act to increase the rate of hole transfer to the Se^2- species. Related experiments on n-GaAs, pGaAs, and Sn-doped In₂O₃ electrodes in Te^2-/- aqueous solutions have also been performed.

The majority carrier (electrons) transfer rate constant at a highly doped n⁺-Si/Co(Cp)₂Cl-methanol junction has been measured directly using the chronoamperometry electrochemical technique. The reduction reaction rate of Co(Cp)₂+ was 0.03 cm-s^-1 at the Si electrode, and was more than 100 times slower than at a hanging mercury electrode. The slower rate was attributed to the smaller optical and static dielectric constants, and the lower density of electrons of the semiconductor. The experimental results were compared to the Marcus theory of charge transfer.

The unique properties of high purity Si/liquid junctions have been investigated under illumination conditions in which the photogenerated carrier concentration exceeds the dopant concentration. Under these high injection conditions, negligible electric fields exist at the semiconductor/liquid interface, and carrier motion is driven by diffusion. Studies of the current-voltage properties of the Si in methanol solutions containing various redox couples suggested that high efficiency photoelectrochemical cells could be established through selective collection of carriers at the semiconductor/liquid junction. The quasi-Fermi levels of electrons and holes were measured directly against the solution potential. Steady-state and transient photovoltage measurements, and theoretical modeliug of the carrier transport, generation, and recombination dynamics indicated that the quasi-Fermi levels were flat across the semiconductor sample. The recombination velocities at the Si/liquid junctions have also been measured, and were shown to vary with the solution potential following the Shockley-Read-Hall theory on recombination.

Spontaneous and stimulated light emission due to radiative recombination in forward biased lead telluride P-N junctions

Since the discovery in 1962 of laser action in semiconductor diodes made from GaAs, the study of spontaneous and stimulated light emission from semiconductors has become an exciting new field of semiconductor physics and quantum electronics combined. Included in the limited number of direct-gap semiconductor materials suitable for laser action are the members of the lead salt family, i.e . PbS, PbSe and PbTe. The material used for the experiments described herein is PbTe . The semiconductor PbTe is a narrow band- gap material (E_g = 0.19 electron volt at a temperature of 4.2°K). Therefore, the radiative recombination of electron-hole pairs between the conduction and valence bands produces photons whose wavelength is in the infrared (λ ≈ 6.5 microns in air).

The p-n junction diode is a convenient device in which the spontaneous and stimulated emission of light can be achieved via current flow in the forward-bias direction. Consequently, the experimental devices consist of a group of PbTe p-n junction diodes made from p –type single crystal bulk material. The p - n junctions were formed by an n-type vapor- phase diffusion perpendicular to the (100) plane, with a junction depth of approximately 75 microns. Opposite ends of the diode structure were cleaved to give parallel reflectors, thereby forming the Fabry-Perot cavity needed for a laser oscillator. Since the emission of light originates from the recombination of injected current carriers, the nature of the radiation depends on the injection mechanism.

The total intensity of the light emitted from the PbTe diodes was observed over a current range of three to four orders of magnitude. At the low current levels, the light intensity data were correlated with data obtained on the electrical characteristics of the diodes. In the low current region (region A), the light intensity, current-voltage and capacitance-voltage data are consistent with the model for photon-assisted tunneling. As the current is increased, the light intensity data indicate the occurrence of a change in the current injection mechanism from photon-assisted tunneling (region A) to thermionic emission (region B). With the further increase of the injection level, the photon-field due to light emission in the diode builds up to the point where stimulated emission (oscillation) occurs. The threshold current at which oscillation begins marks the beginning of a region (region C) where the total light intensity increases very rapidly with the increase in current. This rapid increase in intensity is accompanied by an increase in the number of narrow-band oscillating modes. As the photon density in the cavity continues to increase with the injection level, the intensity gradually enters a region of linear dependence on current (region D), i.e. a region of constant (differential) quantum efficiency.

Data obtained from measurements of the stimulated-mode light-intensity profile and the far-field diffraction pattern (both in the direction perpendicular to the junction-plane) indicate that the active region of high gain (i.e. the region where a population inversion exists) extends to approximately a diffusion length on both sides of the junction. The data also indicate that the confinement of the oscillating modes within the diode cavity is due to a variation in the real part of the dielectric constant, caused by the gain in the medium. A value of τ ≈ 10^-9 second for the minority- carrier recombination lifetime (at a diode temperature of 20.4°K) is obtained from the above measurements. This value for τ is consistent with other data obtained independently for PbTe crystals.

Data on the threshold current for stimulated emission (for a diode temperature of 20. 4°K) as a function of the reciprocal cavity length were obtained. These data yield a value of J’_th = (400 ± 80) amp/cm² for the threshold current in the limit of an infinitely long diode-cavity. A value of α = (30 ± 15) cm^-1 is obtained for the total (bulk) cavity loss constant, in general agreement with independent measurements of free- carrier absorption in PbTe. In addition, the data provide a value of n_s ≈ 10% for the internal spontaneous quantum efficiency. The above value for n_s yields values of t_b ≈ τ ≈ 10^-9 second and t_s ≈ 10^-8 second for the nonradiative and the spontaneous (radiative) lifetimes, respectively.

The external quantum efficiency (n_d) for stimulated emission from diode J-2 (at 20.4° K) was calculated by using the total light intensity vs. diode current data, plus accepted values for the material parameters of the mercury- doped germanium detector used for the measurements. The resulting value is n_d ≈ 10%-20% for emission from both ends of the cavity. The corresponding radiative power output (at λ = 6.5 micron) is 120-240 milliwatts for a diode current of 6 amps.

Wire array photovoltaics

Over the past five years, the cost of solar panels has dropped drastically and, in concert, the number of installed modules has risen exponentially. However, solar electricity is still more than twice as expensive as electricity from a natural gas plant. Fortunately, wire array solar cells have emerged as a promising technology for further lowering the cost of solar.

Si wire array solar cells are formed with a unique, low cost growth method and use 100 times less material than conventional Si cells. The wires can be embedded in a transparent, flexible polymer to create a free-standing array that can be rolled up for easy installation in a variety of form factors. Furthermore, by incorporating multijunctions into the wire morphology, higher efficiencies can be achieved while taking advantage of the unique defect relaxation pathways afforded by the 3D wire geometry.

The work in this thesis shepherded Si wires from undoped arrays to flexible, functional large area devices and laid the groundwork for multijunction wire array cells. Fabrication techniques were developed to turn intrinsic Si wires into full p-n junctions and the wires were passivated with a-Si:H and a-SiNx:H. Single wire devices yielded open circuit voltages of 600 mV and efficiencies of 9%. The arrays were then embedded in a polymer and contacted with a transparent, flexible, Ni nanoparticle and Ag nanowire top contact. The contact connected >99% of the wires in parallel and yielded flexible, substrate free solar cells featuring hundreds of thousands of wires.

Building on the success of the Si wire arrays, GaP was epitaxially grown on the material to create heterostructures for photoelectrochemistry. These cells were limited by low absorption in the GaP due to its indirect bandgap, and poor current collection due to a diffusion length of only 80 nm. However, GaAsP on SiGe offers a superior combination of materials, and wire architectures based on these semiconductors were investigated for multijunction arrays. These devices offer potential efficiencies of 34%, as demonstrated through an analytical model and optoelectronic simulations. SiGe and Ge wires were fabricated via chemical-vapor deposition and reactive ion etching. GaAs was then grown on these substrates at the National Renewable Energy Lab and yielded ns lifetime components, as required for achieving high efficiency devices.

Travel time tomographic studies of seismic structures around subducted lithospheric slabs

The nature of the subducted lithospheric slab is investigated seismologically by tomographic inversions of ISC residual travel times. The slab, in which nearly all deep earthquakes occur, is fast in the seismic images because it is much cooler than the ambient mantle. High resolution three-dimensional P and S wave models in the NW Pacific are obtained using regional data, while inversion for the SW Pacific slabs includes teleseismic arrivals. Resolution and noise estimations show the models are generally well-resolved.

The slab anomalies in these models, as inferred from the seismicity, are generally coherent in the upper mantle and become contorted and decrease in amplitude with depth. Fast slabs are surrounded by slow regions shallower than 350 km depth. Slab fingering, including segmentation and spreading, is indicated near the bottom of the upper mantle. The fast anomalies associated with the Japan, Izu-Bonin, Mariana and Kermadec subduction zones tend to flatten to sub-horizontal at depth, while downward spreading may occur under parts of the Mariana and Kuril arcs. The Tonga slab appears to end around 550 km depth, but is underlain by a fast band at 750-1000 km depths.

The NW Pacific model combined with the Clayton-Comer mantle model predicts many observed residual sphere patterns. The predictions indicate that the near-source anomalies affect the residual spheres less than the teleseismic contributions. The teleseismic contributions may be removed either by using a mantle model, or using teleseismic station averages of residuals from only regional events. The slab-like fast bands in the corrected residual spheres are are consistent with seismicity trends under the Mariana Tzu-Bonin and Japan trenches, but are inconsistent for the Kuril events.

The comparison of the tomographic models with earthquake focal mechanisms shows that deep compression axes and fast velocity slab anomalies are in consistent alignment, even when the slab is contorted or flattened. Abnormal stress patterns are seen at major junctions of the arcs. The depth boundary between tension and compression in the central parts of these arcs appears to depend on the dip and topology of the slab.

Low-noise THz Niobium SIS Mixers

This thesis describes the development of low-noise heterodyne receivers at THz frequencies for submillimeter astronomy using Nb-based superconductor-insulator-superconductor (SIS) tunneling junctions. The mixers utilize a quasi-optical configuration which consists of a planar twin-slot antenna and antisymmetrically-fed two-junctions on an antireflection-coated silicon hyperhemispherical lens. On-chip integrated tuning circuits, in the form of microstrip lines, are used to obtain maximum coupling efficiency in the designed frequency band. To reduce the rf losses in the integrated tuning circuits above the superconducting Nb gap frequency (~ 700 GHz), normal-metal Al is used to replace Nb as the tuning circuits.

To account the rf losses in the micros trip lines, we calculated the surface impedance of the AI films using the nonlocal anomalous skin effect for finite thickness films. Nb films were calculated using the Mattis-Bardeen theory in the extreme anomalous limit. Our calculations show that the losses of the Al and Nb microstrip lines are about equal at 830 GHz. For Al-wiring and Nb-wiring mixers both optimized at 1050 GHz, the RF coupling efficiency of Al-wiring mixer is higher than that of Nb-wiring one by almost 50%. We have designed both Nb-wiring and Al-wiring mixers below and above the gap frequency.

A Fourier transform spectrometer (FTS) has been constructed especially for the study of the frequency response of SIS receivers. This FTS features large aperture size (10 inch) and high frequency resolution (114 MHz). The FTS spectra, obtained using the SIS receivers as direct detectors on the FTS, agree quite well with our theoretical simulations. We have also, for the first time, measured the FTS heterodyne response of an SIS mixer at sufficiently high resolution to resolve the LO and the sidebands. Heterodyne measurements of our SIS receivers with Nb-wiring or Al-wiring have yielded results which arc among the best reported to date for broadband heterodyne receivers. The Nb-wiring mixers, covering 400 - 850 GHz band with four separate fixed-tuned mixers, have uncorrected DSB receiver noise temperature around 5hv/k_b to 700 GHz, and better than 540 K at 808 GHz. An Al-wiring mixer designed for 1050 GHz band has an uncorrected DSB receiver noise temperature 840 K at 1042 GHz and 2.5 K bath temperature. Mixer performance analysis shows that Nb junctions can work well up to twice the gap frequency and the major cause of loss above the gap frequency is the rf losses in the microstrip tuning structures. Further advances in THz SIS mixers may be possible using circuits fabricated with higher-gap superconductors such as NbN. However, this will require high-quality films with low RF surface resistance at THz frequencies.

Investigations of noise and of quantum interference in proximity effect bridges

This work reports investigations upon weakly superconducting proximity effect bridges. These bridges, which exhibit the Josephson effects, are produced by bisecting a superconductor with a short (<1µ) region of material whose superconducting transition temperature is below that of the adjacent superconductors. These bridges are fabricated from layered refractory metal thin films whose transition temperature will depend upon the thickness ratio of the materials involved. The thickness ratio is changed in the area of the bridge to lower its transition temperature. This is done through novel photolithographic techniques described in the text, Chapter 2.

If two such proximity effect bridges are connected in parallel, they form a quantum interferometer. The maximum zero voltage current through this circuit is periodically modulated by the magnetic flux through the circuit. At a constant bias current, the modulation of the critical current produces a modulation in the dc voltage across the bridge. This change in dc voltage has been found to be the result of a change in the internal dissipation in the device. A simple model using lumped circuit theory and treating the bridges as quantum oscillators of frequency ω = 2eV/h, where V is the time average voltage across the device, has been found to adequately describe the observed voltage modulation.

The quantum interferometers have been converted to a galvanometer through the inclusion of an integral thin film current path which couples magnetic flux through the interferometer. Thus a change in signal current produces a change in the voltage across the interferometer at a constant bias current. This work is described in Chapter 3 of the text.

The sensitivity of any device incorporating proximity effect bridges will ultimately be determined by the fluctuations in their electrical parameters. He have measured the spectral power density of the voltage fluctuations in proximity effect bridges using a room temperature electronics and a liquid helium temperature transformer to match the very low (~ 0.1 Ω) impedances characteristic of these devices.

We find the voltage noise to agree quite well with that predicted by phonon noise in the normal conduction through the bridge plus a contribution from the superconducting pair current through the bridge which is proportional to the ratios of this current to the time average voltage across the bridge. The total voltage fluctuations are given by <V^2(f ) > = 4kTR^2_d I/V where R_d is the dynamic resistance, I the total current, and V the voltage across the bridge . An additional noise source appears with a strong 1/f^(n) dependence , 1.5 < n < 2, if the bridges are fabricated upon a glass substrate. This excess noise, attributed to thermodynamic temperature fluctuations in the volume of the bridge, increases dramatically on a glass substrate due to the greatly diminished thermal diffusivity of the glass as compared to sapphire.

Proximity effect in Ag-Pb alloys

The superconducting properties and the microstructure of the Ag_100-xPb_x alloys, 1 ≤ x ≤ 5, prepared by rapid quenching from the liquid state with and without subsequent heat treatments, have been studied. The x-ray diffraction measurements show that supersaturated solid solutions of Pb in Ag can be obtained up to 3.2 at.% Pb as compared to less than 0.1 at.% Pb at equilibrium. It was found that by suitable heat treatment it is possible to vary the size and distribution of the Pb precipitates in the Ag matrix and reproducible superconducting properties in the alloy can be observed. The superconducting transition temperature of these samples can be qualitatively explained by the Silvert and Singh's theoretical calculation. The theory developed for the case of layer structure can be extended to three dimensions to explain the critical current versus temperature behavior. The critical current versus field behavior of these alloys can be explained by the modification of the Josephson effect. Combining these results together with the critical magnetic field measurements and the microstructure studies of the alloys, it can be concluded that the three-dimensional proximity effect is the main mechanism for the superconductivity in the Ag-Pb alloys. Based on the Hilsch empirical formula which was based on experimental results obtained on layer structures, the experimental data in this investigation show that the electron-phonon-electron interaction in silver is attractive. The interaction parameter NV obtained is approximately 0.06, which would lead to a value of 10^-5 °K for the superconducting transition temperature of Ag. These values are in agreement with other determinations which were done on vapor-deposited metallic film sandwiches. Hence, the Hilsch empirical relation valid for layer structures is also valid in the three-dimensional case. Because the transition temperature and the critical current can be varied in a wide range by controlling the heat treatments, the Ag-Pb superconductors might have some useful applications.

Complexity of rupture propagation in large earthquakes in relation to tectonic environment

Complexity in the earthquake rupture process can result from many factors. This study investigates the origin of such complexity by examining several recent, large earthquakes in detail. In each case the local tectonic environment plays an important role in understanding the source of the complexity.

Several large shallow earthquakes (M_s > 7.0) along the Middle American Trench have similarities and differences between them that may lead to a better understanding of fracture and subduction processes. They are predominantly thrust events consistent with the known subduction of the Cocos plate beneath N. America. Two events occurring along this subduction zone close to triple junctions show considerable complexity. This may be attributable to a more heterogeneous stress environment in these regions and as such has implications for other subduction zone boundaries.

An event which looks complex but is actually rather simple is the 1978 Bermuda earthquake (M_s ~ 6). It is located predominantly in the mantle. Its mechanism is one of pure thrust faulting with a strike N 20°W and dip 42°NE. Its apparent complexity is caused by local crustal structure. This is an important event in terms of understanding and estimating seismic hazard on the eastern seaboard of N. America.

A study of several large strike-slip continental earthquakes identifies characteristics which are common to them and may be useful in determining what to expect from the next great earthquake on the San Andreas fault. The events are the 1976 Guatemala earthquake on the Motagua fault and two events on the Anatolian fault in Turkey (the 1967, Mudurnu Valley and 1976, E. Turkey events). An attempt to model the complex P-waveforms of these events results in good synthetic fits for the Guatemala and Mudurnu Valley events. However, the E. Turkey event proves to be too complex as it may have associated thrust or normal faulting. Several individual sources occurring at intervals of between 5 and 20 seconds characterize the Guatemala and Mudurnu Valley events. The maximum size of an individual source appears to be bounded at about 5 x 10²⁶ dyne-cm. A detailed source study including directivity is performed on the Guatemala event. The source time history of the Mudurnu Valley event illustrates its significance in modeling strong ground motion in the near field. The complex source time series of the 1967 event produces amplitudes greater by a factor of 2.5 than a uniform model scaled to the same size for a station 20 km from the fault.

Three large and important earthquakes demonstrate an important type of complexity --- multiple-fault complexity. The first, the 1976 Philippine earthquake, an oblique thrust event, represents the first seismological evidence for a northeast dipping subduction zone beneath the island of Mindanao. A large event, following the mainshock by 12 hours, occurred outside the aftershock area and apparently resulted from motion on a subsidiary fault since the event had a strike-slip mechanism.

An aftershock of the great 1960 Chilean earthquake on June 6, 1960, proved to be an interesting discovery. It appears to be a large strike-slip event at the main rupture's southern boundary. It most likely occurred on the landward extension of the Chile Rise transform fault, in the subducting plate. The results for this event suggest that a small event triggered a series of slow events; the duration of the whole sequence being longer than 1 hour. This is indeed a "slow earthquake".

Perhaps one of the most complex of events is the recent Tangshan, China event. It began as a large strike-slip event. Within several seconds of the mainshock it may have triggered thrust faulting to the south of the epicenter. There is no doubt, however, that it triggered a large oblique normal event to the northeast, 15 hours after the mainshock. This event certainly contributed to the great loss of life-sustained as a result of the Tangshan earthquake sequence.

What has been learned from these studies has been applied to predict what one might expect from the next great earthquake on the San Andreas. The expectation from this study is that such an event would be a large complex event, not unlike, but perhaps larger than, the Guatemala or Mudurnu Valley events. That is to say, it will most likely consist of a series of individual events in sequence. It is also quite possible that the event could trigger associated faulting on neighboring fault systems such as those occurring in the Transverse Ranges. This has important bearing on the earthquake hazard estimation for the region.

Coulomb drag and tunneling studies in quantum Hall bilayers

The bilayer quantum Hall state at total filling factor ν_T=1, where the total electron density matches the degeneracy of the lowest Landau level, is a prominent example of Bose-Einstein condensation of excitons. A macroscopically ordered state is realized where an electron in one layer is tightly bound to a "hole" in the other layer. If exciton transport were the only bulk transportmechanism, a current driven in one layer would spontaneously generate a current of equal magnitude and opposite sign in the other layer. The Corbino Coulomb drag measurements presented in this thesis demonstrate precisely this phenomenon.

Excitonic superfluidity has been long sought in the ν_T=1 state. The tunneling between the two electron gas layers exihibit a dc Josephson-like effect. A simple model of an overdamped voltage biased Josephson junction is in reasonable agreement with the observed tunneling I-V. At small tunneling biases, it exhibits a tunneling "supercurrent". The dissipation is carefully studied in this tunneling "supercurrent" and found to remain small but finite.

Current dependence of the energy gap in superconductors : a direct measurement

From the tunneling characteristics of a tin-tin oxide-lead junction, a direct measurement has been made of the energy-gap variation for a superconductor carrying a current in a compensated geometry. Throughout the region investigated – several temperatures near T_c and down to a reduced temperature t = 0.8 –the observed current dependence agrees quite well with predictions based on the Ginzburg-Landau-Gor’kov theory. Near T_c the predicted temperature dependence is also well verified, though deviations are observed at lower temperatures; even for the latter, the data are internally consistent with the temperature dependence of the experimental critical current. At the lowest temperature investigated, t = 0.8, a small “Josephson” tunneling current allowed further a direct measurement of the electron drift velocity at low current densities. From this, a preliminary experimental value of the critical velocity, believed to be the first reported, can be inferred in the basis of Ginzburg-Landau theory. For tin at t = 0.8, we find v_c = 87 m/sec. This value does not appear fully consistent with those predicted by recent theories for superconductors with short electronic mean-free-paths.

Experimental studies of weak superconductivity

Experimental investigations were made of the nature of weak superconductivity in a structure having well-defined, controllable characteristics and geometry. Controlled experiments were made possible by using a thin-film structure which was entirely metallic and consisted of a superconducting film with a localized section that was weak in the sense that its transition temperature was depressed relative to the rest of the film. The depression of transition temperature was brought about by underlaying the superconductor with a normal metal.

The DC and AC electrical characteristics of this structure were studied. It was found that this structure exhibited a non-zero, time-average supercurrent at finite voltage to at least .2 mV, and generated an oscillating electric potential at a frequency given by the Josephson relation. The DC V-I characteristic and the amplitude of the AC oscillation were found to be consistent with a two- fluid (normal current-supercurrent) model of weak super-conductivity based on e thermodynamically irreversible process of repetitive phase-slip, and featuring a periodic time dependence in the amplitude of the superconducting order parameter.

The observed linewidth of the AC oscillation could be accounted for by incorporating Johnson noise in the two-fluid model.

Experimentally it was found that the behavior of a short (length on the order of the coherence distance) weak superconductor could be characterized by its critical current and normal-state resistance, and an empirical expression was obtained for the time dependence of the super-current and voltage.

It was found that the results could not be explained on the basis of the theory of the Josephson junction.