Investigations of charge-carrier dynamics at semiconductor/liquid interfaces

Theoretical and experimental investigations of charge-carrier dynamics at semiconductor/liquid interfaces, specifically with respect to interfacial electron transfer and surface recombination, are presented.

Fermi's golden rule has been used to formulate rate expressions for charge transfer of delocalized carriers in a nondegenerately doped semiconducting electrode to localized, outer-sphere redox acceptors in an electrolyte phase. The treatment allows comparison between charge-transfer kinetic data at metallic, semimetallic, and semiconducting electrodes in terms of parameters such as the electronic coupling to the electrode, the attenuation of coupling with distance into the electrolyte, and the reorganization energy of the charge-transfer event. Within this framework, rate constant values expected at representative semiconducting electrodes have been determined from experimental data for charge transfer at metallic electrodes. The maximum rate constant (i.e., at optimal exoergicity) for outer-sphere processes at semiconducting electrodes is computed to be in the range 10^-17-10^-16 cm⁴ s^-1, which is in excellent agreement with prior theoretical models and experimental results for charge-transfer kinetics at semiconductor/liquid interfaces.

Double-layer corrections have been evaluated for semiconductor electrodes in both depletion and accumulation conditions. In conjuction with the Gouy-Chapman-Stern model, a finite difference approach has been used to calculate potential drops at a representative solid/liquid interface. Under all conditions that were simulated, the correction to the driving force used to evaluate the interfacial rate constant was determined to be less than 2% of the uncorrected interfacial rate constant.

Photoconductivity decay lifetimes have been obtained for Si(111) in contact with solutions of CH₃OH or tetrahydrofuran containing one-electron oxidants. Silicon surfaces in contact with electrolyte solutions having Nernstian redox potentials > 0 V vs. SCE exhibited low effective surface recombination velocities regardless of the different surface chemistries. The formation of an inversion layer, and not a reduced density of electrical trap sites on the surface, is shown to be responsible for the long charge-carrier lifetimes observed for these systems. In addition, a method for preparing an air-stable, low surface recombination velocity Si surface through a two-step, chlorination/alkylation reaction is described.

Design of a timber Howe truss highway bridge

The span of the bridge was assumed as 100 feet. The type of bridge used is the timber Howe Truss. The height of truss was taken as 20 feet between center lines of top and bottom chords. The width was taken as 18 feet center to center of trusses. The truss was divided up into five panels 20 feet long.

It was designed according to the "General Specifications for Steel Highway Bridges" by Ketchum. For the live load for the floor and its supports, a load of 80 pounds per square foot of total floor surface or a 15 ton traction engine with axles 10 feet centers and 6 feet gage, two thirds of load to be carried by rear axles.

For the truss a load of 75 pounds per square foot of floor surface.

For the wind load the bottom lateral bracing is to be designed to resist a lateral wind load of 300 pounds per foot of span; 150 pounds of this to be treated as a moving load.

The top lateral bracing is to be designed to resist a lateral wind force of 150 pounds per foot of span.

The timber to be used in the bridge is to be Douglas fir.

The unit stresses used for timber are those of the American Railway Engineering Association.