The design and synthesis of a true, heterogeneous, asymmetric catalyst

This work describes the design and synthesis of a true, heterogeneous, asymmetric catalyst. The catalyst consists of a thin film that resides on a high-surface- area hydrophilic solid and is composed of a chiral, hydrophilic organometallic complex dissolved in ethylene glycol. Reactions of prochiral organic reactants take place predominantly at the ethylene glycol-bulk organic interface.

The synthesis of this new heterogeneous catalyst is accomplished in a series of designed steps. A novel, water-soluble, tetrasulfonated 2,2'-bis (diphenylphosphino)-1,1'-binaphthyl (BINAP-4S0_3Na) is synthesized by direct sulfonation of 2,2'-bis(diphenylphosphino)-1,1'-binaphthyl (BINAP). The rhodium (I) complex of BINAP-4SO_3Na is prepared and is shown to be the first homogeneous catalyst to perform asymmetric reductions of prochiral 2-acetamidoacrylic acids in neat water with enantioselectivities as high as those obtained in non-aqueous solvents. The ruthenium (II) complex, [Ru(BINAP-4SO_3Na)(benzene)Cl]Cl is also synthesized and exhibits a broader substrate specificity as well as higher enantioselectivities for the homogeneous asymmetric reduction of prochiral 2-acylamino acid precursors in water. Aquation of the ruthenium-chloro bond in water is found to be detrimental to the enantioselectivity with some substrates. Replacement of water by ethylene glycol results in the same high e.e's as those found in neat methanol. The ruthenium complex is impregnated onto a controlled pore-size glass CPG-240 by the incipient wetness technique. Anhydrous ethylene glycol is used as the immobilizing agent in this heterogeneous catalyst, and a non-polar 1:1 mixture of chloroform and cyclohexane is employed as the organic phase.

Asymmetric reduction of 2-(6'-methoxy-2'-naphthyl)acrylic acid to the non-steroidal anti-inflammatory agent, naproxen, is accomplished with this heterogeneous catalyst at a third of the rate observed in homogeneous solution with an e.e. of 96% at a reaction temperature of 3°C and 1,400 psig of hydrogen. No leaching of the ruthenium complex into the bulk organic phase is found at a detection limit of 32 ppb. Recycling of the catalyst is possible without any loss in enantioselectivity. Long-term stability of this new heterogeneous catalyst is proven by a self-assembly test. That is, under the reaction conditions, the individual components of the present catalytic system self-assemble into the supported-catalyst configuration.

The strategies outlined here for the design and synthesis of this new heterogeneous catalyst are general, and can hopefully be applied to the development of other heterogeneous, asymmetric catalysts.

I. Fundamental limitations in microelectronics. II. Power Schottky diode design and comparison with the junction diode. III. Permittivity of strontium titanate

Part I

The physical phenomena which will ultimately limit the packing density of planar bipolar and MOS integrated circuits are examined. The maximum packing density is obtained by minimizing the supply voltage and the size of the devices. The minimum size of a bipolar transistor is determined by junction breakdown, punch-through and doping fluctuations. The minimum size of a MOS transistor is determined by gate oxide breakdown and drain-source punch-through. The packing density of fully active bipolar or static non-complementary MOS circuits becomes limited by power dissipation. The packing density of circuits which are not fully active such as read-only memories, becomes limited by the area occupied by the devices, and the frequency is limited by the circuit time constants and by metal migration. The packing density of fully active dynamic or complementary MOS circuits is limited by the area occupied by the devices, and the frequency is limited by power dissipation and metal migration. It is concluded that read-only memories will reach approximately the same performance and packing density with MOS and bipolar technologies, while fully active circuits will reach the highest levels of integration with dynamic MOS or complementary MOS technologies.

Part II

Because the Schottky diode is a one-carrier device, it has both advantages and disadvantages with respect to the junction diode which is a two-carrier device. The advantage is that there are practically no excess minority carriers which must be swept out before the diode blocks current in the reverse direction, i.e. a much faster recovery time. The disadvantage of the Schottky diode is that for a high voltage device it is not possible to use conductivity modulation as in the p i n diode; since charge carriers are of one sign, no charge cancellation can occur and current becomes space charge limited. The Schottky diode design is developed in Section 2 and the characteristics of an optimally designed silicon Schottky diode are summarized in Fig. 9. Design criteria and quantitative comparison of junction and Schottky diodes is given in Table 1 and Fig. 10. Although somewhat approximate, the treatment allows a systematic quantitative comparison of the devices for any given application.

Part III

We interpret measurements of permittivity of perovskite strontium titanate as a function of orientation, temperature, electric field and frequency performed by Dr. Richard Neville. The free energy of the crystal is calculated as a function of polarization. The Curie-Weiss law and the LST relation are verified. A generalized LST relation is used to calculate the permittivity of strontium titanate from zero to optic frequencies. Two active optic modes are important. The lower frequency mode is attributed mainly to motion of the strontium ions with respect to the rest of the lattice, while the higher frequency active mode is attributed to motion of the titanium ions with respect to the oxygen lattice. An anomalous resonance which multi-domain strontium titanate crystals exhibit below 65°K is described and a plausible mechanism which explains the phenomenon is presented.