Cu2O substrates and epitaxial Cu2O/ZnO thin film hetero-structures for solar energy conversion

Future fossil fuel scarcity and environmental degradation have demonstrated the need for renewable, low-carbon sources of energy to power an increasingly industrialized world. Solar energy with its infinite supply makes it an extraordinary resource that should not go unused. However with current materials, adoption is limited by cost and so a paradigm shift must occur to get everyone on the same page embracing solar technology. Cuprous Oxide (Cu2O) is a promising earth abundant material that can be a great alternative to traditional thin-film photovoltaic materials like CIGS, CdTe, etc. We have prepared Cu2O bulk substrates by the thermal oxidation of copper foils as well Cu2O thin films deposited via plasma-assisted Molecular Beam Epitaxy. From preliminary Hall measurements it was determined that Cu2O would need to be doped extrinsically. This was further confirmed by simulations of ZnO/Cu2O heterojunctions. A cyclic interdependence between, defect concentration, minority carrier lifetime, film thickness, and carrier concentration manifests itself a primary reason for why efficiencies greater than 4% has yet to be realized. Our growth methodology for our thin-film heterostructures allow precise control of the number of defects that incorporate into our film during both equilibrium and nonequilibrium growth. We also report process flow/device design/fabrication techniques in order to create a device. A typical device without any optimizations exhibited open-circuit voltages Voc, values in excess 500mV; nearly 18% greater than previous solid state devices.

Structure, chemistry, and energetics of organic and inorganic adsorbates on Ga-rich GaAs and GaP(001) surfaces

The work described in this dissertation includes fundamental investigations into three surface processes, namely inorganic film growth, water-induced oxidation, and organic functionalization/passivation, on the GaP and GaAs(001) surfaces. The techniques used to carry out this work include scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. Atomic structure, electronic structure, reaction mechanisms, and energetics related to these surface processes are discussed at atomic or molecular levels.

First, we investigate epitaxial Zn₃P₂ films grown on the Ga-rich GaAs(001)(6×6) surface. The film growth mechanism, electronic properties, and atomic structure of the Zn₃P₂/GaAs(001) system are discussed based on experimental and theoretical observations. We discover that a P-rich amorphous layer covers the crystalline Zn3P2 film during and after growth. We also propose more accurate picture of the GaP interfacial layer between Zn₃P₂ and GaAs, based on the atomic structure, chemical bonding, band diagram, and P-replacement energetics, than was previously anticipated.

Second, DFT calculations are carried out in order to understand water-induced oxidation mechanisms on the Ga-rich GaP(001)(2×4) surface. Structural and energetic information of every step in the gaseous water-induced GaP oxidation reactions are elucidated at the atomic level in great detail. We explore all reasonable ground states involved in most of the possible adsorption and decomposition pathways. We also investigate structures and energies of the transition states in the first hydrogen dissociation of a water molecule on the (2×4) surface.

Finally, adsorption structures and thermal decomposition reactions of 1-propanethiol on the Ga-rich GaP(001)(2×4) surface are investigated using high resolution STM, XPS, and DFT simulations. We elucidate adsorption locations and their associated atomic structures of a single 1-propanethiol molecule on the (2×4) surface as a function of annealing temperature. DFT calculations are carried out to optimize ground state structures and search transition states. XPS is used to investigate variations of the chemical bonding nature and coverage of the adsorbate species.

Forced convection film boiling of subcooled water around a sphere

An experimental investigation was made of forced convection film boiling of subcooled water around a sphere at atmospheric pressure. The water was sufficiently cool that the vapor condensed before leaving the film with the result that no vapor bubbles left the film. The experimental runs were made using inductively heated spheres at temperatures above 740°C. and using inlet water temperatures between 15°C. and 27°C. The spheres used had diameters of 1/2 inch, 9/16 inch, and 3/8 inch and were supported by the liquid flow. Reynolds numbers between 60 and 700 were used.

Analysis of the collected non-condensables indicated that oxygen and nitrogen dissolved in the water accumulated within the vapor film and that hetrogeneous chemical reactions occurred at the sphere surface. An iron-steam reaction resulted in more than 20% by volume hydrogen in the film at wall temperatures above 900°C. At temperatures near 1100°C. more than 80% by volume of the film was composed of hydrogen. It was found that gold plating of the sphere could eliminate this reaction.

Material and energy balances were used to derive equations which may be used to predict the overall average heat transfer coefficients for subcooled film boiling around a sphere. These equations include the effect of dissolved gases in the water. Equations also were derived which may be used to predict the composition of the film for cases in which an equilibrium exists between the dissolved gases and the gases in the film.

The derived equations were compared to the experimental results. It was found that a correlation existed between the Nusselt number for heat transfer from the vapor-liquid interface into the liquid and the Reynolds number, liquid Prandtl number product. In addition, it was found that the percentage of dissolved oxygen removed during the film boiling could be predicted to within 10%.