New technologies driving decade-bandwidth radio astronomy : quad-ridged flared horn and compound-semiconductor LNAs

Among the branches of astronomy, radio astronomy is unique in that it spans the largest portion of the electromagnetic spectrum, e.g., from about 10 MHz to 300 GHz. On the other hand, due to scientific priorities as well as technological limitations, radio astronomy receivers have traditionally covered only about an octave bandwidth. This approach of "one specialized receiver for one primary science goal" is, however, not only becoming too expensive for next-generation radio telescopes comprising thousands of small antennas, but also is inadequate to answer some of the scientific questions of today which require simultaneous coverage of very large bandwidths.

This thesis presents significant improvements on the state of the art of two key receiver components in pursuit of decade-bandwidth radio astronomy: 1) reflector feed antennas; 2) low-noise amplifiers on compound-semiconductor technologies. The first part of this thesis introduces the quadruple-ridged flared horn, a flexible, dual linear-polarization reflector feed antenna that achieves 5:1-7:1 frequency bandwidths while maintaining near-constant beamwidth. The horn is unique in that it is the only wideband feed antenna suitable for radio astronomy that: 1) can be designed to have nominal 10 dB beamwidth between 30 and 150 degrees; 2) requires one single-ended 50 Ohm low-noise amplifier per polarization. Design, analysis, and measurements of several quad-ridged horns are presented to demonstrate its feasibility and flexibility.

The second part of the thesis focuses on modeling and measurements of discrete high-electron mobility transistors (HEMTs) and their applications in wideband, extremely low-noise amplifiers. The transistors and microwave monolithic integrated circuit low-noise amplifiers described herein have been fabricated on two state-of-the-art HEMT processes: 1) 35 nm indium phosphide; 2) 70 nm gallium arsenide. DC and microwave performance of transistors from both processes at room and cryogenic temperatures are included, as well as first-reported measurements of detailed noise characterization of the sub-micron HEMTs at both temperatures. Design and measurements of two low-noise amplifiers covering 1--20 and 8—50 GHz fabricated on both processes are also provided, which show that the 1--20 GHz amplifier improves the state of the art in cryogenic noise and bandwidth, while the 8--50 GHz amplifier achieves noise performance only slightly worse than the best published results but does so with nearly a decade bandwidth.

High-energy scattering processes with cuts in the angular momentum plane

The experimental consequence of Regge cuts in the angular momentum plane are investigated. The principle tool in the study is the set of diagrams originally proposed by Amati, Fubini, and Stanghellini. Mandelstam has shown that the AFS cuts are actually cancelled on the physical sheet, but they may provide a useful guide to the properties of the real cuts. Inclusion of cuts modifies the simple Regge pole predictions for high-energy scattering data. As an example, an attempt is made to fit high energy elastic scattering data for pp, ṗp, π^±p, and K^±p, by replacing the Igi pole by terms representing the effect of a Regge cut. The data seem to be compatible with either a cut or the Igi pole.

Large plane deformations of thin elastic sheets of neo-hookean material

Large plane deformations of thin elastic sheets of neo-Hookean material are considered and a method of successive substitutions is developed to solve problems within the two-dimensional theory of finite plane stress. The first approximation is determined by linear boundary value problems on two harmonic functions, and it is approached asymptotically at very large extensions in the plane of the sheet. The second and higher approximations are obtained by solving Poisson equations. The method requires modification when the membrane has a traction-free edge.

Several problems are treated involving infinite sheets under uniform biaxial stretching at infinity. First approximations are obtained when a circular or elliptic inclusion is present and when the sheet has a circular or elliptic hole, including the limiting cases of a line inclusion and a straight crack or slit. Good agreement with exact solutions is found for circularly symmetric deformations. Other examples discuss the stretching of a short wide strip, the deformation near a boundary corner which is traction-free, and the application of a concentrated load to a boundary point.