Deviation from standard inflationary cosmology and the problems in ekpyrosis

There are two competing models of our universe right now. One is Big Bang with inflation cosmology. The other is the cyclic model with ekpyrotic phase in each cycle. This paper is divided into two main parts according to these two models. In the first part, we quantify the potentially observable effects of a small violation of translational invariance during inflation, as characterized by the presence of a preferred point, line, or plane. We explore the imprint such a violation would leave on the cosmic microwave background anisotropy, and provide explicit formulas for the expected amplitudes $\langle a_{lm}a_{l'm'}^*\rangle$ of the spherical-harmonic coefficients. We then provide a model and study the two-point correlation of a massless scalar (the inflaton) when the stress tensor contains the energy density from an infinitely long straight cosmic string in addition to a cosmological constant. Finally, we discuss if inflation can reconcile with the Liouville's theorem as far as the fine-tuning problem is concerned. In the second part, we find several problems in the cyclic/ekpyrotic cosmology. First of all, quantum to classical transition would not happen during an ekpyrotic phase even for superhorizon modes, and therefore the fluctuations cannot be interpreted as classical. This implies the prediction of scale-free power spectrum in ekpyrotic/cyclic universe model requires more inspection. Secondly, we find that the usual mechanism to solve fine-tuning problems is not compatible with eternal universe which contains infinitely many cycles in both direction of time. Therefore, all fine-tuning problems including the flatness problem still asks for an explanation in any generic cyclic models.

New optoelectronic devices using GaAs-GaAlAs epitaxy

Three subjects related to epitaxial GaAs-GaAlAs optoelectronic devices are discussed in this thesis. They are:

1. Embedded Epitaxy

This is a technique of selective multilayer growth of GaAs- Ga_1-xAl_xAs single crystal structures through stripe openings in masking layers on GaAs substrates. This technique results in prismatic layers of GaAs and Ga_1-xAl_xAs "embedded" in each other and leads to controllable uniform structures terminated by crystal faces. The dependence of the growth habit on the orientation of the stripe openings has been studied. Room temperature embedded double heterostructure lasers have been fabricated using this technique. Threshold current densities as low as 1.5 KA/cm² have been achieved.

2. Barrier Controlled PNPN Laser Diode

It is found that the I-V characteristics of a PNPN device can be controlled by using potential barriers in the base regions. Based on this principle, GaAs-GaAlAs heterostructure PNPN laser diodes have been fabricated. GaAlAs potential barriers in the bases control not only the electrical but also the optical properties of the device. PNPN lasers with low threshold currents and high breakover voltage have been achieved. Numerical calculations of this barrier controlled structure are presented in the ranges where the total current is below the holding point and near the lasing threshold.

3. Injection Lasers on Semi-Insulating Substrates

GaAs-GaAlAs heterostructure lasers fabricated on semi-insulating substrates have been studied. Two different laser structures achieved are: (1) Crowding effect lasers, (2) Lateral injection lasers. Experimental results and the working principles underlying the operation of these lasers are presented. The gain induced guiding mechanism is used to explain the lasers' far field radiation patterns. It is found that Zn diffusion in Ga_1-xAl_xAs depends on the Al content x, and that GaAs can be used as the diffusion mask for Zn diffusion in Ga_1-xAl_xAs. Lasers having very low threshold currents and operating in a stable single mode have been achieved. Because these lasers are fabricated on semi-insulating substrates, it is possible to integrate them with other electronic devices on the same substrate. An integrated device, which consists of a crowding effect laser and a Gunn oscillator on a common semi-insulating GaAs substrate, has been achieved.

Influence of local geology on earthquake ground motion

As a simplified approach for estimating theoretically the influence of local subsoils upon the ground motion during an earthquake, the problem of an idealized layered system subjected to vertically incident plane body waves was studied. Both the technique of steady-state analysis and the technique of transient analysis have been used to analyze the problem.

In the steady-state analysis, a recursion formula has been derived for obtaining the response of a layered system to sinusoidally steady-state input. Several conclusions are drawn concerning the nature of the amplification spectrum of a nonviscous layered system having its layer stiffnesses increasing with depth. Numerical examples are given to demonstrate the effect of layer parameters on the amplification spectrum of a layered system.

In the transient analysis, two modified shear beam models have been established for obtaining approximately the response of a layered system to earthquake-like excitation. The method of continuous modal analysis was adopted for approximate analysis of the models, with energy dissipation in the layers, if any, taken into account. Numerical examples are given to demonstrate the accuracy of the models and the effect of a layered system in modifying the input motion.

Conditions are established, under which the theory is applicable to predict the influence of local subsoils on the ground motion during an earthquake. To demonstrate the applicability of the models to actual cases, three examples of actually recorded earthquake events are examined. It is concluded that significant modification of the incoming seismic waves, as predicted by the theory, is likely to occur in well defined soft subsoils during an earthquake, provided that certain conditions concerning the nature of the incoming seismic waves are satisfied.