Charles I : unhero of royalist poetry

During the English Civil War, Charles I appeared as a character in Royalist poetry, both directly and allegorically. These depictions drew on ancient Roman epic poems, particularly Lucan’s De Bello Civili, in their treatment of the subject matter of civil war and Charles as an epic hero. Though the authors of these poems supported Charles, their depictions of him and his reign reveal anxiety about his weakness as a ruler. In comparison to the cults of personality surrounding his predecessors and the heroes of De Bello Civili, his cult appears bland and forced. The lack of enthusiasm surrounding Charles I may help to explain his downfall at the hands of his Parliamentarian opponents.  

The global optimization of phase-incoherent signals

The problem of global optimization of M phase-incoherent signals in N complex dimensions is formulated. Then, by using the geometric approach of Landau and Slepian, conditions for optimality are established for N = 2 and the optimal signal sets are determined for M = 2, 3, 4, 6, and 12.

The method is the following: The signals are assumed to be equally probable and to have equal energy, and thus are represented by points ṡ_i, i = 1, 2, …, M, on the unit sphere S₁ in C^N. If W_ik is the halfspace determined by ṡ_i and ṡ_k and containing ṡ_i, i.e. W_ik = {ṙϵC^N:| ≥ | ˂ṙ, ṡ_k˃|}, then the Ʀ_i = ∩/k≠i W_ik, i = 1, 2, …, M, the maximum likelihood decision regions, partition S₁. For additive complex Gaussian noise ṅ and a received signal ṙ = ṡ_ie^jϴ + ṅ, where ϴ is uniformly distributed over [0, 2π], the probability of correct decoding is P_C = 1/π^N ∞/ʃ/0 r^2N-1e^-(r2+1)U(r)dr, where U(r) = 1/M M/Ʃ/i=1 Ʀ_i ʃ/∩ S₁ I₀(2r | ˂ṡ, ṡ_i˃|)dσ(ṡ), and r = ǁṙǁ.

For N = 2, it is proved that U(r) ≤ ʃ/C_α I₀(2r|˂ṡ, ṡ_i˃|)dσ(ṡ) – 2K/M. h(1/2K [Mσ(C_α)-σ(S₁)]), where C_α = {ṡϵS₁:|˂ṡ, ṡ_i˃| ≥ α}, K is the total number of boundaries of the net on S₁ determined by the decision regions, and h is the strictly increasing strictly convex function of σ(C_α∩W), (where W is a halfspace not containing ṡ_i), given by h = ʃ/C_α∩W I₀ (2r|˂ṡ, ṡ_i˃|)dσ(ṡ). Conditions for equality are established and these give rise to the globally optimal signal sets for M = 2, 3, 4, 6, and 12.

Measurement of the band bending and surface dipole at chemically functionalized Si(111)/vacuum interfaces

The core-level energy shifts observed using X-ray photoelectron spectroscopy (XPS) have been used to determine the band bending at Si(111) surfaces terminated with Si-Br, Si-H, and Si-CH₃ groups, respectively. The surface termination influenced the band bending, with the Si 2p_3/2 binding energy affected more by the surface chemistry than by the dopant type. The highest binding energies were measured on Si(111)-Br (whose Fermi level was positioned near the conduction band at the surface), followed by Si(111)-H, followed by Si(111)-CH₃ (whose Fermi level was positioned near mid-gap at the surface). Si(111)-CH₃ surfaces exposed to Br₂(g) yielded the lowest binding energies, with the Fermi level positioned between mid-gap and the valence band. The Fermi level position of Br₂(g)-exposed Si(111)-CH₃ was consistent with the presence of negatively charged bromine-containing ions on such surfaces. The binding energies of all of the species detected on the surface (C, O, Br) shifted with the band bending, illustrating the importance of isolating the effects of band bending when measuring chemical shifts on semiconductor surfaces. The influence of band bending was confirmed by surface photovoltage (SPV) measurements, which showed that the core levels shifted toward their flat-band values upon illumination. Where applicable, the contribution from the X-ray source to the SPV was isolated and quantified. Work functions were measured by ultraviolet photoelectron spectroscopy (UPS), allowing for calculation of the sign and magnitude of the surface dipole in such systems. The values of the surface dipoles were in good agreement with previous measurements as well as with electronegativity considerations. The binding energies of the adventitious carbon signals were affected by band bending as well as by the surface dipole. A model of band bending in which charged surface states are located exterior to the surface dipole is consistent with the XPS and UPS behavior of the chemically functionalized Si(111) surfaces investigated herein.