Photoelectrochemistry of GaAs and Si liquid junctions

A quantitative study has been performed on the stability of GaAs surfaces in a 0.10 M K₂Se-0.01 M K₂Se₂ aqueous solution. In this electrolyte, n-type GaAs electrodes displayed significant photocorrosion in competition with faradaic charge transfer to Se^2-. Chemisorption of group VIIIB metal ions onto the GaAs surfaces yielded improved current-voltage behavior of the GaAs photoanodes, and also resulted in a significant reduction in photocorrosion. This behavior implies that the chemisorbed metal ions act to increase the rate of hole transfer to the Se^2- species. Related experiments on n-GaAs, pGaAs, and Sn-doped In₂O₃ electrodes in Te^2-/- aqueous solutions have also been performed.

The majority carrier (electrons) transfer rate constant at a highly doped n⁺-Si/Co(Cp)₂Cl-methanol junction has been measured directly using the chronoamperometry electrochemical technique. The reduction reaction rate of Co(Cp)₂+ was 0.03 cm-s^-1 at the Si electrode, and was more than 100 times slower than at a hanging mercury electrode. The slower rate was attributed to the smaller optical and static dielectric constants, and the lower density of electrons of the semiconductor. The experimental results were compared to the Marcus theory of charge transfer.

The unique properties of high purity Si/liquid junctions have been investigated under illumination conditions in which the photogenerated carrier concentration exceeds the dopant concentration. Under these high injection conditions, negligible electric fields exist at the semiconductor/liquid interface, and carrier motion is driven by diffusion. Studies of the current-voltage properties of the Si in methanol solutions containing various redox couples suggested that high efficiency photoelectrochemical cells could be established through selective collection of carriers at the semiconductor/liquid junction. The quasi-Fermi levels of electrons and holes were measured directly against the solution potential. Steady-state and transient photovoltage measurements, and theoretical modeliug of the carrier transport, generation, and recombination dynamics indicated that the quasi-Fermi levels were flat across the semiconductor sample. The recombination velocities at the Si/liquid junctions have also been measured, and were shown to vary with the solution potential following the Shockley-Read-Hall theory on recombination.

Excitation energies and decay properties of T = 3/2 states in ^(17)O, ^(17)F and ^(21)Na

The two lowest T = 3/2 levels in ²¹Na have been studied in the ¹⁹F(³He, n), ²⁰Ne (p,p) and ²⁰Ne (p,p’) reactions, and their excitation energies, spins, parities and widths have been determined. In a separate investigation, branching ratios were measured for the isospin-nonconserving particle decays of the lowest T = 3/2 levels in ¹⁷O and ¹⁷F to the ground state and first two excited states of ¹⁶O, by studying the ¹⁵N(³He,n) ¹⁷F*(p) ¹⁶O and ¹⁸O(³He, α)¹⁷O*(n) ¹⁶O reactions.

The ¹⁹F(³He,n) ²¹Na reaction was studied at incident energies between 4.2 and 5.9 MeV using a pulsed-beam neutron-time-of-flight spectrometer. Two T = 3/2 levels were identified at excitation energies of 8.99 ± 0.05 MeV (J > ½) and 9.22 ± 0.015 MeV (J ^π = ½⁺, Γ ˂ 40 keV). The spins and parities were determined by a comparison of the measured angular distributions with the results of DWBA calculations.

These two levels were also obsesrved as isospin-forbidden resonances in the ²⁰Ne(p,p) and ²⁰Ne(p,p’) reactions. Excitation energies were measured and spins, parities, and widths were determined from a single level dispersion theory analysis. The following results were obtained:

E_x = 8.973 ± 0.007 MeV, J ^π = 5/2 ⁺ or 3/2⁺, Γ ≤ 1.2 keV,

^Γp_o = 0.1 ± 0.05 keV; E_x = 9.217 ± 0.007 MeV, J^π = ½ ⁺,

Γ = 2.3 ± 0.5 keV, ^Γp_o = 1.1 ± 0.3 keV.

Isospin assignments were made on the basis of excitation energies, spins, parities, and widths.

Branching ratios for the isospin-nonconserving proton decays of the 11.20 MeV, T = 3/2 level in ¹⁷F were measured by the ¹⁵N(³He,n) ¹⁷ F*(p) ¹⁶O reaction to be 0.088 ± 0.016 to the ground state of ¹⁶O and 0.22 ± 0.04 to the unresolved 6.05 and 6.13 MeV levels of ¹⁶O. Branching ratios for the neutron decays of the analogous T = 3/2 level, at 11.08 MeV in ¹⁷O, were measured by the ¹⁶O(³He, α)¹⁷O*(n)¹⁶O reaction to be 0.91 ± 0.15 to the ground state of ¹⁶O and 0.05 ± 0.02 to the unresolved 6.05 and 6.13 MeV states. By comparing the ratios of reduced widths for the mirror decays, the form of the isospin impurity in the T = 3/2 levels is shown to depend on T_z.