Two topics in elementary particle physics. I. Crossing as a group and elimination of exotic channels. II. Real parts of meson-nucleon forward scattering amplitudes.

I. Crossing transformations constitute a group of permutations under which the scattering amplitude is invariant. Using Mandelstem's analyticity, we decompose the amplitude into irreducible representations of this group. The usual quantum numbers, such as isospin or SU(3), are "crossing-invariant". Thus no higher symmetry is generated by crossing itself. However, elimination of certain quantum numbers in intermediate states is not crossing-invariant, and higher symmetries have to be introduced to make it possible. The current literature on exchange degeneracy is a manifestation of this statement. To exemplify application of our analysis, we show how, starting with SU(3) invariance, one can use crossing and the absence of exotic channels to derive the quark-model picture of the tensor nonet. No detailed dynamical input is used.

II. A dispersion relation calculation of the real parts of forward π^±p and K^±p scattering amplitudes is carried out under the assumption of constant total cross sections in the Serpukhov energy range. Comparison with existing experimental results as well as predictions for future high energy experiments are presented and discussed. Electromagnetic effects are found to be too small to account for the expected difference between the π^-p and π⁺p total cross sections at higher energies.

Algebraic Techniques in Coding Theory: Entropy Vectors, Frames, and Constrained Coding

The study of codes, classically motivated by the need to communicate information reliably in the presence of error, has found new life in fields as diverse as network communication, distributed storage of data, and even has connections to the design of linear measurements used in compressive sensing. But in all contexts, a code typically involves exploiting the algebraic or geometric structure underlying an application. In this thesis, we examine several problems in coding theory, and try to gain some insight into the algebraic structure behind them.

The first is the study of the entropy region - the space of all possible vectors of joint entropies which can arise from a set of discrete random variables. Understanding this region is essentially the key to optimizing network codes for a given network. To this end, we employ a group-theoretic method of constructing random variables producing so-called "group-characterizable" entropy vectors, which are capable of approximating any point in the entropy region. We show how small groups can be used to produce entropy vectors which violate the Ingleton inequality, a fundamental bound on entropy vectors arising from the random variables involved in linear network codes. We discuss the suitability of these groups to design codes for networks which could potentially outperform linear coding.

The second topic we discuss is the design of frames with low coherence, closely related to finding spherical codes in which the codewords are unit vectors spaced out around the unit sphere so as to minimize the magnitudes of their mutual inner products. We show how to build frames by selecting a cleverly chosen set of representations of a finite group to produce a "group code" as described by Slepian decades ago. We go on to reinterpret our method as selecting a subset of rows of a group Fourier matrix, allowing us to study and bound our frames' coherences using character theory. We discuss the usefulness of our frames in sparse signal recovery using linear measurements.

The final problem we investigate is that of coding with constraints, most recently motivated by the demand for ways to encode large amounts of data using error-correcting codes so that any small loss can be recovered from a small set of surviving data. Most often, this involves using a systematic linear error-correcting code in which each parity symbol is constrained to be a function of some subset of the message symbols. We derive bounds on the minimum distance of such a code based on its constraints, and characterize when these bounds can be achieved using subcodes of Reed-Solomon codes.

Some generalizations of commutativity for linear transformations on a finite dimensional vector space

Let L be the algebra of all linear transformations on an n-dimensional vector space V over a field F and let A, B, ƐL. Let A_i+1 = A_iB - BA_i, i = 0, 1, 2,…, with A = A_o. Let f_k (A, B; σ) = A_2K+1 - ^σ1^A2K-1 ^{+ σ}2^A2K-3 -… +(-1)^Kσ_KA₁ where σ = (σ₁, σ₂,…, σ_K), σ_i belong to F and K = k(k-1)/2. Taussky and Wielandt [Proc. Amer. Math. Soc., 13(1962), 732-735] showed that f_n(A, B; σ) = 0 if σ_i is the i^th elementary symmetric function of (β₄- β_s)², 1 ≤ r ˂ s ≤ n, i = 1, 2, …, N, with N = n(n-1)/2, where β₄ are the characteristic roots of B. In this thesis we discuss relations involving f_k(X, Y; σ) where X, Y Ɛ L and 1 ≤ k ˂ n. We show: 1. If F is infinite and if for each X Ɛ L there exists σ so that f_k(A, X; σ) = 0 where 1 ≤ k ˂ n, then A is a scalar transformation. 2. If F is algebraically closed, a necessary and sufficient condition that there exists a basis of V with respect to which the matrices of A and B are both in block upper triangular form, where the blocks on the diagonals are either one- or two-dimensional, is that certain products X₁, X₂…X_r belong to the radical of the algebra generated by A and B over F, where X_i has the form f₂(A, P(A,B); σ), for all polynomials P(x, y). We partially generalize this to the case where the blocks have dimensions ≤ k. 3. If A and B generate L, if the characteristic of F does not divide n and if there exists σ so that f_k(A, B; σ) = 0, for some k with 1 ≤ k ˂ n, then the characteristic roots of B belong to the splitting field of g_k(w; σ) = w^2K+1 - σ₁w^2K-1 + σ₂w^2K-3 - …. +(-1)^K σ_Kw over F. We use this result to prove a theorem involving a generalized form of property L [cf. Motzkin and Taussky, Trans. Amer. Math. Soc., 73(1952), 108-114]. 4. Also we give mild generalizations of results of McCoy [Amer. Math. Soc. Bull., 42(1936), 592-600] and Drazin [Proc. London Math. Soc., 1(1951), 222-231].

Rings faithfully represented on their left socle

In 1964 A. W. Goldie [1] posed the problem of determining all rings with identity and minimal condition on left ideals which are faithfully represented on the right side of their left socle. Goldie showed that such a ring which is indecomposable and in which the left and right principal indecomposable ideals have, respectively, unique left and unique right composition series is a complete blocked triangular matrix ring over a skewfield. The general problem suggested above is very difficult. We obtain results under certain natural restrictions which are much weaker than the restrictive assumptions made by Goldie.

We characterize those rings in which the principal indecomposable left ideals each contain a unique minimal left ideal (Theorem (4.2)). It is sufficient to handle indecomposable rings (Lemma (1.4)). Such a ring is also a blocked triangular matrix ring. There exist r positive integers K₁,..., K_r such that the i,j^th block of a typical matrix is a K_i x K_j matrix with arbitrary entries in a subgroup D_ij of the additive group of a fixed skewfield D. Each D_ii is a sub-skewfield of D and D_ri = D for all i. Conversely, every matrix ring which has this form is indecomposable, faithfully represented on the right side of its left socle, and possesses the property that every principal indecomposable left ideal contains a unique minimal left ideal.

The principal indecomposable left ideals may have unique composition series even though the ring does not have minimal condition on right ideals. We characterize this situation by defining a partial ordering ρ on {i, 2,...,r} where we set iρj if D_ij ≠ 0. Every principal indecomposable left ideal has a unique composition series if and only if the diagram of ρ is an inverted tree and every D_ij is a one-dimensional left vector space over D_ii (Theorem (5.4)).

We show (Theorem (2.2)) that every ring A of the type we are studying is a unique subdirect sum of less complex rings A₁,...,A_s of the same type. Namely, each A_i has only one isomorphism class of minimal left ideals and the minimal left ideals of different A_i are non-isomorphic as left A-modules. We give (Theorem (2.1)) necessary and sufficient conditions for a ring which is a subdirect sum of rings A_i having these properties to be faithfully represented on the right side of its left socle. We show ((4.F), p. 42) that up to technical trivia the rings A_i are matrix rings of the form

[...]. Each Q_j comes from the faithful irreducible matrix representation of a certain skewfield over a fixed skewfield D. The bottom row is filled in by arbitrary elements of D.

In Part V we construct an interesting class of rings faithfully represented on their left socle from a given partial ordering on a finite set, given skewfields, and given additive groups. This class of rings contains the ones in which every principal indecomposable left ideal has a unique minimal left ideal. We identify the uniquely determined subdirect summands mentioned above in terms of the given partial ordering (Proposition (5.2)). We conjecture that this technique serves to construct all the rings which are a unique subdirect sum of rings each having the property that every principal-indecomposable left ideal contains a unique minimal left ideal.

Pulsed neutron measurements in two adjacent finite media

The pulsed neutron technique has been used to investigate the decay of thermal neutrons in two adjacent water-borated water finite media. Experiments were performed with a 6x6x6 inches cubic assembly divided in two halves by a thin membrane and filled with pure distilled water on one side and borated water on the other side.

The fundamental decay constant was measured versus the boric acid concentration in the poisoned medium. The experimental results showed good agreement with the predictions of the time dependent diffusion model. It was assumed that the addition of boric acid increases the absorption cross section of the poisoned medium without affecting its diffusion properties: In these conditions, space-energy separability and the concept of an “effective” buckling as derived from diffusion theory were introduced. Their validity was supported by the experimental results.

Measurements were performed with the absorption cross section of the poisoned medium increasing gradually up to 16 times its initial value. Extensive use of the IBM 7090-7094 Computing facility was made to analyze properly the decay data (Frantic Code). Attention was given to the count loss correction scheme and the handling of the statistics involved. Fitting of the experimental results into the analytical form predicted by the diffusion model led to

Ʃ_av = 4721 sec^-1 (±150)

D_o = 35972 cm²sec^-1 (±800) for water at 21˚C

C (given) = 3420 cm⁴sec^-1

These values, when compared with published data, show that the diffusion model is adequate in describing the experiment.

Heteroepitaxy of Group IV and Group III-V semiconductor alloys for photovoltaic applications

Photovoltaic energy conversion represents a economically viable technology for realizing collection of the largest energy resource known to the Earth -- the sun. Energy conversion efficiency is the most leveraging factor in the price of energy derived from this process. This thesis focuses on two routes for high efficiency, low cost devices: first, to use Group IV semiconductor alloy wire array bottom cells and epitaxially grown Group III-V compound semiconductor alloy top cells in a tandem configuration, and second, GaP growth on planar Si for heterojunction and tandem cell applications.

Metal catalyzed vapor-liquid-solid grown microwire arrays are an intriguing alternative for wafer-free Si and SiGe materials which can be removed as flexible membranes. Selected area Cu-catalyzed vapor-liquid solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm/min^-1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in-situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Tandem Ga_1-xIn_xP/Si microwire array solar cells are a route towards a high efficiency, low cost, flexible, wafer-free solar technology. Realizing tandem Group III-V compound semiconductor/Si wire array devices requires optimization of materials growth and device performance. GaP and Ga_1-xIn_xP layers were grown heteroepitaxially with metalorganic chemical vapor deposition on Si microwire array substrates. The layer morphology and crystalline quality have been studied with scanning electron microscopy and transmission electron microscopy, and they provide a baseline for the growth and characterization of a full device stack. Ultimately, the complexity of the substrates and the prevalence of defects resulted in material without detectable photoluminescence, unsuitable for optoelectronic applications.

Coupled full-field optical and device physics simulations of a Ga_0.51In_0.49P/Si wire array tandem are used to predict device performance. A 500 nm thick, highly doped "buffer" layer between the bottom cell and tunnel junction is assumed to harbor a high density of lattice mismatch and heteroepitaxial defects. Under simulated AM1.5G illumination, the device structure explored in this work has a simulated efficiency of 23.84% with realistic top cell SRH lifetimes and surface recombination velocities. The relative insensitivity to surface recombination is likely due to optical generation further away from the free surfaces and interfaces of the device structure.

Finally, GaP has been grown free of antiphase domains on Si (112) oriented substrates using metalorganic chemical vapor deposition. Low temperature pulsed nucleation is followed by high temperature continuous growth, yielding smooth, specular thin films. Atomic force microscopy topography mapping showed very smooth surfaces (4-6 Å RMS roughness) with small depressions in the surface. Thin films (~ 50 nm) were pseudomorphic, as confirmed by high resolution x-ray diffraction reciprocal space mapping, and 200 nm thick films showed full relaxation. Transmission electron microscopy showed no evidence of antiphase domain formation, but there is a population of microtwin and stacking fault defects.

Spontaneous and stimulated light emission due to radiative recombination in forward biased lead telluride P-N junctions

Since the discovery in 1962 of laser action in semiconductor diodes made from GaAs, the study of spontaneous and stimulated light emission from semiconductors has become an exciting new field of semiconductor physics and quantum electronics combined. Included in the limited number of direct-gap semiconductor materials suitable for laser action are the members of the lead salt family, i.e . PbS, PbSe and PbTe. The material used for the experiments described herein is PbTe . The semiconductor PbTe is a narrow band- gap material (E_g = 0.19 electron volt at a temperature of 4.2°K). Therefore, the radiative recombination of electron-hole pairs between the conduction and valence bands produces photons whose wavelength is in the infrared (λ ≈ 6.5 microns in air).

The p-n junction diode is a convenient device in which the spontaneous and stimulated emission of light can be achieved via current flow in the forward-bias direction. Consequently, the experimental devices consist of a group of PbTe p-n junction diodes made from p –type single crystal bulk material. The p - n junctions were formed by an n-type vapor- phase diffusion perpendicular to the (100) plane, with a junction depth of approximately 75 microns. Opposite ends of the diode structure were cleaved to give parallel reflectors, thereby forming the Fabry-Perot cavity needed for a laser oscillator. Since the emission of light originates from the recombination of injected current carriers, the nature of the radiation depends on the injection mechanism.

The total intensity of the light emitted from the PbTe diodes was observed over a current range of three to four orders of magnitude. At the low current levels, the light intensity data were correlated with data obtained on the electrical characteristics of the diodes. In the low current region (region A), the light intensity, current-voltage and capacitance-voltage data are consistent with the model for photon-assisted tunneling. As the current is increased, the light intensity data indicate the occurrence of a change in the current injection mechanism from photon-assisted tunneling (region A) to thermionic emission (region B). With the further increase of the injection level, the photon-field due to light emission in the diode builds up to the point where stimulated emission (oscillation) occurs. The threshold current at which oscillation begins marks the beginning of a region (region C) where the total light intensity increases very rapidly with the increase in current. This rapid increase in intensity is accompanied by an increase in the number of narrow-band oscillating modes. As the photon density in the cavity continues to increase with the injection level, the intensity gradually enters a region of linear dependence on current (region D), i.e. a region of constant (differential) quantum efficiency.

Data obtained from measurements of the stimulated-mode light-intensity profile and the far-field diffraction pattern (both in the direction perpendicular to the junction-plane) indicate that the active region of high gain (i.e. the region where a population inversion exists) extends to approximately a diffusion length on both sides of the junction. The data also indicate that the confinement of the oscillating modes within the diode cavity is due to a variation in the real part of the dielectric constant, caused by the gain in the medium. A value of τ ≈ 10^-9 second for the minority- carrier recombination lifetime (at a diode temperature of 20.4°K) is obtained from the above measurements. This value for τ is consistent with other data obtained independently for PbTe crystals.

Data on the threshold current for stimulated emission (for a diode temperature of 20. 4°K) as a function of the reciprocal cavity length were obtained. These data yield a value of J’_th = (400 ± 80) amp/cm² for the threshold current in the limit of an infinitely long diode-cavity. A value of α = (30 ± 15) cm^-1 is obtained for the total (bulk) cavity loss constant, in general agreement with independent measurements of free- carrier absorption in PbTe. In addition, the data provide a value of n_s ≈ 10% for the internal spontaneous quantum efficiency. The above value for n_s yields values of t_b ≈ τ ≈ 10^-9 second and t_s ≈ 10^-8 second for the nonradiative and the spontaneous (radiative) lifetimes, respectively.

The external quantum efficiency (n_d) for stimulated emission from diode J-2 (at 20.4° K) was calculated by using the total light intensity vs. diode current data, plus accepted values for the material parameters of the mercury- doped germanium detector used for the measurements. The resulting value is n_d ≈ 10%-20% for emission from both ends of the cavity. The corresponding radiative power output (at λ = 6.5 micron) is 120-240 milliwatts for a diode current of 6 amps.

I. Stokes flow past a thin screen. II. Viscous flows past porous bodies of finite size

Part I

The slow, viscous flow past a thin screen is analyzed based on Stokes equations. The problem is reduced to an associated electric potential problem as introduced by Roscoe. Alternatively, the problem is formulated in terms of a Stokeslet distribution, which turns out to be equivalent to the first approach.

Special interest is directed towards the solution of the Stokes flow past a circular annulus. A "Stokeslet" formulation is used in this analysis. The problem is finally reduced to solving a Fredholm integral equation of the second kind. Numerical data for the drag coefficient and the mean velocity through the hole of the annulus are obtained.

Stokes flow past a circular screen with numerous holes is also attempted by assuming a set of approximate boundary conditions. An "electric potential" formulation is used, and the problem is also reduced to solving a Fredholm integral equation of the second kind. Drag coefficient and mean velocity through the screen are computed.

Part II

The purpose of this investigation is to formulate correctly a set of boundary conditions to be prescribed at the interface between a viscous flow region and a porous medium so that the problem of a viscous flow past a porous body can be solved.

General macroscopic equations of motion for flow through porous media are first derived by averaging Stokes equations over a volume element of the medium. These equations, including viscous stresses for the description, are more general than Darcy's law. They reduce to Darcy's law when the Darcy number becomes extremely small.

The interface boundary conditions of the first kind are then formulated with respect to the general macroscopic equations applied within the porous region. An application of such equations and boundary conditions to a Poiseuille shear flow problem demonstrates that there usually exists a thin interface layer immediately inside the porous medium in which the tangential velocity varies exponentially and Darcy's law does not apply.

With Darcy's law assumed within the porous region, interface boundary conditions of the second kind are established which relate the flow variables across the interface layer. The primary feature is a jump condition on the tangential velocity, which is found to be directly proportional to the normal gradient of the tangential velocity immediately outside the porous medium. This is in agreement with the experimental results of Beavers, et al.

The derived boundary conditions are applied in the solutions of two other problems: (1) Viscous flow between a rotating solid cylinder and a stationary porous cylinder, and (2) Stokes flow past a porous sphere.

On the distribution of the signs of the conjugates of the cyclotomic units in the maximal real subfield of the qth cyclotomic field, q A prime

Let F = Ǫ(ζ + ζ ^–1) be the maximal real subfield of the cyclotomic field Ǫ(ζ) where ζ is a primitive qth root of unity and q is an odd rational prime. The numbers u₁=-1, u_k=(ζ^k-ζ^-k)/(ζ-ζ^-1), k=2,…,p, p=(q-1)/2, are units in F and are called the cyclotomic units. In this thesis the sign distribution of the conjugates in F of the cyclotomic units is studied.

Let G(F/Ǫ) denote the Galoi's group of F over Ǫ, and let V denote the units in F. For each σϵ G(F/Ǫ) and μϵV define a mapping sgn_σ: V→GF(2) by sgn_σ(μ) = 1 iff σ(μ) ˂ 0 and sgn_σ(μ) = 0 iff σ(μ) ˃ 0. Let {σ₁, ... , σ_p} be a fixed ordering of G(F/Ǫ). The matrix M_q=(sgn_σj(v_i) ) , i, j = 1, ... , p is called the matrix of cyclotomic signatures. The rank of this matrix determines the sign distribution of the conjugates of the cyclotomic units. The matrix of cyclotomic signatures is associated with an ideal in the ring GF(2) [x] / (x^p+ 1) in such a way that the rank of the matrix equals the GF(2)-dimension of the ideal. It is shown that if p = (q-1)/ 2 is a prime and if 2 is a primitive root mod p, then M_q is non-singular. Also let p be arbitrary, let ℓ be a primitive root mod q and let L = {i | 0 ≤ i ≤ p-1, the least positive residue of defined by ℓⁱ mod q is greater than p}. Let H_q(x) ϵ GF(2)[x] be defined by H_q(x) = g. c. d. ((Σ xⁱ/I ϵ L) (x+1) + 1, x^p + 1). It is shown that the rank of M_q equals the difference p - degree H_q(x).

Further results are obtained by using the reciprocity theorem of class field theory. The reciprocity maps for a certain abelian extension of F and for the infinite primes in F are associated with the signs of conjugates. The product formula for the reciprocity maps is used to associate the signs of conjugates with the reciprocity maps at the primes which lie above (2). The case when (2) is a prime in F is studied in detail. Let T denote the group of totally positive units in F. Let U be the group generated by the cyclotomic units. Assume that (2) is a prime in F and that p is odd. Let F₍₂₎ denote the completion of F at (2) and let V₍₂₎ denote the units in F₍₂₎. The following statements are shown to be equivalent. 1) The matrix of cyclotomic signatures is non-singular. 2) U∩T = U². 3) U∩F²₍₂₎ = U². 4) V₍₂₎/ V₍₂₎² = ˂v₁ V₍₂₎²˃ ʘ…ʘ˂v_p V₍₂₎²˃ ʘ ˂3V₍₂₎²˃.

The rank of M_q was computed for 5≤q≤929 and the results appear in tables. On the basis of these results and additional calculations the following conjecture is made: If q and p = (q -1)/ 2 are both primes, then M_q is non-singular.

Combinatorial properties of finite geometric lattices

Let L be a finite geometric lattice of dimension n, and let w(k) denote the number of elements in L of rank k. Two theorems about the numbers w(k) are proved: first, w(k) ≥ w(1) for k = 2, 3, ..., n-1. Second, w(k) = w(1) if and only if k = n-1 and L is modular. Several corollaries concerning the "matching" of points and dual points are derived from these theorems.

Both theorems can be regarded as a generalization of a theorem of de Bruijn and Erdös concerning ʎ= 1 designs. The second can also be considered as the converse to a special case of Dilworth's theorem on finite modular lattices.

These results are related to two conjectures due to G. -C. Rota. The "unimodality" conjecture states that the w(k)'s form a unimodal sequence. The "Sperner" conjecture states that a set of non-comparable elements in L has cardinality at most max/k {w(k)}. In this thesis, a counterexample to the Sperner conjecture is exhibited.

Finite-Element Simulations of Earthquakes

This thesis discusses simulations of earthquake ground motions using prescribed ruptures and dynamic failure. Introducing sliding degrees of freedom led to an innovative technique for numerical modeling of earthquake sources. This technique allows efficient implementation of both prescribed ruptures and dynamic failure on an arbitrarily oriented fault surface. Off the fault surface the solution of the three-dimensional, dynamic elasticity equation uses well known finite-element techniques. We employ parallel processing to efficiently compute the ground motions in domains containing millions of degrees of freedom.

Using prescribed ruptures we study the sensitivity of long-period near-source ground motions to five earthquake source parameters for hypothetical events on a strike-slip fault (M_w 7.0 to 7.1) and a thrust fault (M_w 6.6 to 7.0). The directivity of the ruptures creates large displacement and velocity pulses in the ground motions in the forward direction. We found a good match between the severity of the shaking and the shape of the near-source factor from the 1997 Uniform Building Code for strike-slip faults and thrust faults with surface rupture. However, for blind thrust faults the peak displacement and velocities occur up-dip from the region with the peak near-source factor. We assert that a simple modification to the formulation of the near-source factor improves the match between the severity of the ground motion and the shape of the near-source factor.

For simulations with dynamic failure on a strike-slip fault or a thrust fault, we examine what constraints must be imposed on the coefficient of friction to produce realistic ruptures under the application of reasonable shear and normal stress distributions with depth. We found that variation of the coefficient of friction with the shear modulus and the depth produces realistic rupture behavior in both homogeneous and layered half-spaces. Furthermore, we observed a dependence of the rupture speed on the direction of propagation and fluctuations in the rupture speed and slip rate as the rupture encountered changes in the stress field. Including such behavior in prescribed ruptures would yield more realistic ground motions.