Morphological and germination response variability in seeds of wild yellow gentian (Gentiana lutea L.) accessions from northwest Spain

Gentiana lutea L. (yellow gentian, Gentianaceae) is an important medicinal plant under protection as endangered species in most European countries. The aim of this work was to evaluate variation in seed mass, seed water content, and seed germination among 56 wild accessions of G. lutea. The effect of gibberellic acid (GA3), putrescine, moist chilling, and level of ripeness of seeds on subsequent germination was also investigated. Seeds of G. lutea showed physiological dormancy (final germination percentages ranged from 0% to 11%, depending on the accession) and GA3 enhanced seed germination drastically in all the accessions. The highest germination (99%) of GA3-treated seeds was reached at 15 °C. Final germination percentage and germination rate (as expressed by mean germination time), as well as seed mass and seed water content, varied significantly among accessions. In general, 1 year moist chilling did not significantly enhance G. lutea seed germination. For most accessions, no significant differences were found between fully ripe seeds and less ripe seeds for seed water content, seed mass, and seed germination. Applications of GA3 were always most effective than those of putrescine for increasing seed germination.

Surface-Assisted Luminescence: The PL Yellow Band and the EL of n-GaN Devices

Although everybody should know thatmeasurements are never performed directly onmaterials but on devices, this is not generally true. Devices are physical systems able to exchange energy and thus subject to the laws of physics, which determine the information they provide. Hence, we should not overlook device effects in measurements as we do by assuming naively that photoluminescence (PL) is bulk emission free fromsurface effects. By replacing this unjustified assumption with a propermodel forGaN surface devices, their yellow band PL becomes surface-assisted luminescence that allows for the prediction of the weak electroluminescence recently observed in n-GaN devices when holes are brought to their surfaces.

Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range

The growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN layers (planar) of similar composition and thickness. The devices are driven under pulsed operation up to 1300 A/cm2 without traces of efficiency droop. Electroluminescence spectra show a very small blue shift with increasing current, (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells.