Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range


Autoria(s): Bengoechea Encabo, Ana; Albert, Steven; López-Romero Moraleda, David; Lefebvre, P.; Barbagini, Francesca; Torres Pardo, Almudena; González Calbet, José María; Sánchez García, Miguel Angel; Calleja Pardo, Enrique
Data(s)

01/10/2014

Resumo

The growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN layers (planar) of similar composition and thickness. The devices are driven under pulsed operation up to 1300 A/cm2 without traces of efficiency droop. Electroluminescence spectra show a very small blue shift with increasing current, (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells.

Formato

application/pdf

Identificador

http://oa.upm.es/35715/

Idioma(s)

eng

Publicador

E.T.S.I. Telecomunicación (UPM)

Relação

http://oa.upm.es/35715/1/INVE_MEM_2014_187520.pdf

http://iopscience.iop.org/0957-4484/25/43/435203/article

info:eu-repo/semantics/altIdentifier/doi/10.1088/0957-4484/25/43/435203

Direitos

http://creativecommons.org/licenses/by-nc-nd/3.0/es/

info:eu-repo/semantics/openAccess

Fonte

Nanotechnology, ISSN 0957-4484, 2014-10, Vol. 25, No. 43

Palavras-Chave #Física #Telecomunicaciones
Tipo

info:eu-repo/semantics/article

Artículo

PeerReviewed