Ion beam analysis of as-received, H-implanted and post implanted annealed fusion steels

The elemental distribution for as-received (AR), H implanted (AI) and post-implanted annealed (A) Eurofer and ODS-Eurofer steels has been characterized by means of micro Particle Induced X-ray Emission (μ-PIXE), micro Elastic Recoil Detection (μ-ERD) and Secondary Ion Mass Spectrometry (SIMS). The temperature and time-induced H diffusion has been analyzed by Resonance Nuclear Reaction Analysis (RNRA), Thermal Desorption Spectroscopy (TDS), ERDA and SIMS techniques. μ-PIXE measurements point out the presence of inhomogeneities in the Y distribution for ODS-Eurofer samples. RNRA and SIMS experiments evidence that hydrogen easily outdiffuses in these steels even at room temperature. ERD data show that annealing at temperatures as low as 300 °C strongly accelerates the hydrogen diffusion process, driving out up to the 90% of the initial hydrogen.

Processing and adsorption control in ZnO single nanowire photodetectors

ZnO single nanowire photodetectors have been measured in different ambient conditions in order to understand and control adsorption processes on the surface. A decrease in the conductivity has been observed as a function of time when the nanowires are exposed to air, due to adsorbed O2/H2O species at the nanowire surface. In order to have a device with stable characteristics in time, thermal desorption has been used to recover the original conductivity followed by PMMA coating of the exposed nanowire surface.

Modelización del proceso de eliminación de la contaminación de suelos con hidrocarburos mediante desorción térmica “in situ” Comprobación de Modelo

El objetivo definitivo de esta investigación es contribuir con la profundización del conocimiento en las tecnologías de remediación, específicamente las térmicas, debido a que la contaminación de suelos es motivo de preocupación por ser uno de los graves impactos ambientales que origina el hombre con sus actividades, especialmente las industriales, afectando a la salud de los seres humanos, y el medio ambiente, representando elevados costes de saneamiento y en ocasiones problemas graves de salud de las comunidades aledañas. Se establecen tres fases de investigación. En la primera se diseña el sistema de termodesorción a escala piloto, se desarrolla las corridas experimentales, la segunda con corridas en laboratorio para investigar sobre los parámetros que intervienen en el proyecto. Se hacen las corridas respectivas para determinar la eficacia del sistema, y la tercera fase que consiste en comparar los modelos teóricos de Hartley, con los de Hartley Graham –Bryce y el de Hamaker para determinar su aproximación con los resultados reales. Apoyado en investigaciones anteriores, se diseñó y construyó un sistema de desorción térmica, el cual consiste en un horno tipo caja con 4 calentadores (resistencias), y una campana con un filtro para evitar la contaminación atmosférica, así mismo, se diseñó un sistema de control que permitió hacer las corridas con 1/3 de la potencia, con una relación de encendido apagado 3:1 respectivamente. Para validar los resultados obtenidos en el estudio matemático, se compararon dos modelos con la finalidad cuál de ellos se aproxima más a la realidad, se tomaron los ensayos con sus tiempos de operación a las temperaturas y se trabajó a distintas bandas de temperaturas para verificar la fiabilidad del proceso matemático. La temperatura es un variable importante en los procesos de desorción, como los son también la humedad del suelo, pues esta va influir directamente en el tiempo de remediación, por lo que es importante tomarla en cuenta. De igual forma el tipo de suelo va influir en los resultados, siendo las arenas más aptas para este tipo de remediación. Los resultados de la modelización son presentados para temperaturas constantes, el cual difiere de la realidad, pues el proceso de calentamiento es lento y va en accenso dependiendo del contenido de humedad y de las propiedades del suelo. La experimentación realizada concluye con buenos resultados de la aplicación de sistemas de desorción de acuerdo a las variables de Panamá. Con relación al grado de cumplimiento respecto a las normativas actuales relacionadas a los límites máximos permitidos. Los resultados garantizan las posibilidades del proceso de remediación térmica de suelos contaminados con combustibles en rango de diésel, garantizando niveles aceptables de limpieza en un tiempo menor a otras metodologías no destructivas pudieran tomar. ABSTRACT The ultimate goal of this investigation is to enhance the pool of knowledge related to remediation technologies, specifically thermal desorption. The motivation for this study is based on concerns due to pollution of land as one of the most serious environmental impacts caused by anthropogenic effects, specially industrial activities, affecting human health and the environment in general, which represents high reclamation costs, and in some cases, serious health issues in nearby communities. Three phases have been established for this study. The first phase involves the design of a thermal desorption system as a pilot experiment, and associated tests. The second phase consists of laboratory testing to investigate the parameters that affect the investigation, as well as to determine the efficacy of the system. The third phase covers the comparison of theorical models as proposed by Hartley, Hartley Graham – Bryce, and Hamaker, as well as the evaluation of these models versus the laboratory results. Supported by previous researches, the thermal desorption system was designed and installed as a “box” type oven with four heaters (resistances) and one absorption hood with a filter to avoid atmospheric contamination. In the same way, a control system was designed allowing testing with 1/3 of the power, with an on/off rate of 3:1 respectively. In order to validate the results, two mathematical models were compared to identify which model is closer to the experimental results; test results were documented with respective durations and temperatures; and experiments were executed using different ranges of temperature to validate the consistency of the mathematical process. Temperature is an important variable that should be considered for the desorption processes, as well as the humidity content within the soil, that has direct influence over the required duration to achieve remediation. In the same manner, the type of soil also influences the results, where sands are more efficient for this type of remediation process. The results from this experiment are according to constant temperatures, which is not a complete representation of the reality, as the heating process is slow and the temperature gradually increases according to the humidity content and other properties of the soil. The experiment shows good results for the application of thermal desorption systems according to the variables in Panama, as well as the level of compliance required to fulfill current regulations and mandatory maximum limits. The results guarantee the possibility of soil thermo-remediation as a resource to clean sites that have been polluted with diesel-like combustibles, allowing acceptable levels in a period of time that is lower than with other non-destructive remediation technics.

Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots

Diluted nitride self-assembled In(Ga)AsN quantum dots (QDs) grown on GaAs substrates are potential candidates to emit in the windows of maximum transmittance for optical fibres (1.3-1.55 μm). In this paper, we analyse the effect of nitrogen addition on the indium desorption occurring during the capping process of InxGa1−xAs QDs (x = l and 0.7). The samples have been grown by molecular beam epitaxy and studied through transmission electron microscopy (TEM) and photoluminescence techniques. The composition distribution inside the dots was determined by statistical moiré analysis and measured by energy dispersive X-ray spectroscopy. First, the addition of nitrogen in In(Ga)As QDs gave rise to a strong redshift in the emission peak, together with a large loss of intensity and monochromaticity. Moreover, these samples showed changes in the QDs morphology as well as an increase in the density of defects. The statistical compositional analysis displayed a normal distribution in InAs QDs with an average In content of 0.7. Nevertheless, the addition of Ga and/or N leads to a bimodal distribution of the Indium content with two separated QD populations. We suggest that the nitrogen incorporation enhances the indium fixation inside the QDs where the indium/gallium ratio plays an important role in this process. The strong redshift observed in the PL should be explained not only by the N incorporation but also by the higher In content inside the QDs

MicroRaman Spectroscopy of Si Nanowires: Influence of Size

Si Nanowires (NWs) were studied by Raman microspectroscopy. The Raman spectrum of the NWs reveals important thermal effects, which broaden and shift the one phonon Raman bands. The low thermal conductivity of the NWs and the low thermal dissipation are responsible for the temperature enhancement in the NW under the excitation with the laser beam. We have modeled, using finite element methods, the interaction between the laser beam and the NWs. The Raman spectrum of Si NWs is interpreted in terms of the temperature induced by the laser beam excitation, in correlation with finite element methods (fem) for studying the interaction between the laser beam and the NWs.

Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces

Molecular hydrogen strongly interacts with vicinal Ge(100) surfaces during preparation in a metal organic vapor phase epitaxy reactor. According to X-ray photoemission spectroscopy and Fourier-transform infrared spectroscopy results, we identify two characteristic reflection anisotropy (RA) spectra for H-free and monohydride-terminated vicinal Ge(100) surfaces. RAS allows in situ monitoring of the surface termination and enables spectroscopic hydrogen kinetic desorption studies on the Ge(100) surface. Comparison of evaluated values for the activation energy and the pre-exponential factor of H desorption evaluated at different photon energies reflects that H unevenly affects the shape of the RA spectrum.

Thermal, stress, and traps effects in AlGaN/GaN HEMTs

GaN y AlN son materiales semiconductores piezoeléctricos del grupo III-V. La heterounión AlGaN/GaN presenta una elevada carga de polarización tanto piezoeléctrica como espontánea en la intercara, lo que genera en su cercanía un 2DEG de grandes concentración y movilidad. Este 2DEG produce una muy alta potencia de salida, que a su vez genera una elevada temperatura de red. Las tensiones de puerta y drenador provocan un stress piezoeléctrico inverso, que puede afectar a la carga de polarización piezoeléctrica y así influir la densidad 2DEG y las características de salida. Por tanto, la física del dispositivo es relevante para todos sus aspectos eléctricos, térmicos y mecánicos. En esta tesis se utiliza el software comercial COMSOL, basado en el método de elementos finitos (FEM), para simular el comportamiento integral electro-térmico, electro-mecánico y electro-térmico-mecánico de los HEMTs de GaN. Las partes de acoplamiento incluyen el modelo de deriva y difusión para el transporte electrónico, la conducción térmica y el efecto piezoeléctrico. Mediante simulaciones y algunas caracterizaciones experimentales de los dispositivos, hemos analizado los efectos térmicos, de deformación y de trampas. Se ha estudiado el impacto de la geometría del dispositivo en su auto-calentamiento mediante simulaciones electro-térmicas y algunas caracterizaciones eléctricas. Entre los resultados más sobresalientes, encontramos que para la misma potencia de salida la distancia entre los contactos de puerta y drenador influye en generación de calor en el canal, y así en su temperatura. El diamante posee une elevada conductividad térmica. Integrando el diamante en el dispositivo se puede dispersar el calor producido y así reducir el auto-calentamiento, al respecto de lo cual se han realizado diversas simulaciones electro-térmicas. Si la integración del diamante es en la parte superior del transistor, los factores determinantes para la capacidad disipadora son el espesor de la capa de diamante, su conductividad térmica y su distancia a la fuente de calor. Este procedimiento de disipación superior también puede reducir el impacto de la barrera térmica de intercara entre la capa adaptadora (buffer) y el substrato. La muy reducida conductividad eléctrica del diamante permite que pueda contactar directamente el metal de puerta (muy cercano a la fuente de calor), lo que resulta muy conveniente para reducir el auto-calentamiento del dispositivo con polarización pulsada. Por otra parte se simuló el dispositivo con diamante depositado en surcos atacados sobre el sustrato como caminos de disipación de calor (disipador posterior). Aquí aparece una competencia de factores que influyen en la capacidad de disipación, a saber, el surco atacado contribuye a aumentar la temperatura del dispositivo debido al pequeño tamaño del disipador, mientras que el diamante disminuiría esa temperatura gracias a su elevada conductividad térmica. Por tanto, se precisan capas de diamante relativamente gruesas para reducer ele efecto de auto-calentamiento. Se comparó la simulación de la deformación local en el borde de la puerta del lado cercano al drenador con estructuras de puerta estándar y con field plate, que podrían ser muy relevantes respecto a fallos mecánicos del dispositivo. Otras simulaciones se enfocaron al efecto de la deformación intrínseca de la capa de diamante en el comportamiento eléctrico del dispositivo. Se han comparado los resultados de las simulaciones de la deformación y las características eléctricas de salida con datos experimentales obtenidos por espectroscopía micro-Raman y medidas eléctricas, respectivamente. Los resultados muestran el stress intrínseco en la capa producido por la distribución no uniforme del 2DEG en el canal y la región de acceso. Además de aumentar la potencia de salida del dispositivo, la deformación intrínseca en la capa de diamante podría mejorar la fiabilidad del dispositivo modulando la deformación local en el borde de la puerta del lado del drenador. Finalmente, también se han simulado en este trabajo los efectos de trampas localizados en la superficie, el buffer y la barrera. Las medidas pulsadas muestran que tanto las puertas largas como las grandes separaciones entre los contactos de puerta y drenador aumentan el cociente entre la corriente pulsada frente a la corriente continua (lag ratio), es decir, disminuir el colapse de corriente (current collapse). Este efecto ha sido explicado mediante las simulaciones de los efectos de trampa de superficie. Por su parte, las referidas a trampas en el buffer se enfocaron en los efectos de atrapamiento dinámico, y su impacto en el auto-calentamiento del dispositivo. Se presenta también un modelo que describe el atrapamiento y liberación de trampas en la barrera: mientras que el atrapamiento se debe a un túnel directo del electrón desde el metal de puerta, el desatrapamiento consiste en la emisión del electrón en la banda de conducción mediante túnel asistido por fonones. El modelo también simula la corriente de puerta, debida a la emisión electrónica dependiente de la temperatura y el campo eléctrico. Además, también se ilustra la corriente de drenador dependiente de la temperatura y el campo eléctrico. ABSTRACT GaN and AlN are group III-V piezoelectric semiconductor materials. The AlGaN/GaN heterojunction presents large piezoelectric and spontaneous polarization charge at the interface, leading to high 2DEG density close to the interface. A high power output would be obtained due to the high 2DEG density and mobility, which leads to elevated lattice temperature. The gate and drain biases induce converse piezoelectric stress that can influence the piezoelectric polarization charge and further influence the 2DEG density and output characteristics. Therefore, the device physics is relevant to all the electrical, thermal, and mechanical aspects. In this dissertation, by using the commercial finite-element-method (FEM) software COMSOL, we achieved the GaN HEMTs simulation with electro-thermal, electro-mechanical, and electro-thermo-mechanical full coupling. The coupling parts include the drift-diffusion model for the electron transport, the thermal conduction, and the piezoelectric effect. By simulations and some experimental characterizations, we have studied the device thermal, stress, and traps effects described in the following. The device geometry impact on the self-heating was studied by electro-thermal simulations and electrical characterizations. Among the obtained interesting results, we found that, for same power output, the distance between the gate and drain contact can influence distribution of the heat generation in the channel and thus influence the channel temperature. Diamond possesses high thermal conductivity. Integrated diamond with the device can spread the generated heat and thus potentially reduce the device self-heating effect. Electro-thermal simulations on this topic were performed. For the diamond integration on top of the device (top-side heat spreading), the determinant factors for the heat spreading ability are the diamond thickness, its thermal conductivity, and its distance to the heat source. The top-side heat spreading can also reduce the impact of thermal boundary resistance between the buffer and the substrate on the device thermal behavior. The very low electrical conductivity of diamond allows that it can directly contact the gate metal (which is very close to the heat source), being quite convenient to reduce the self-heating for the device under pulsed bias. Also, the diamond coated in vias etched in the substrate as heat spreading path (back-side heat spreading) was simulated. A competing mechanism influences the heat spreading ability, i.e., the etched vias would increase the device temperature due to the reduced heat sink while the coated diamond would decrease the device temperature due to its higher thermal conductivity. Therefore, relative thick coated diamond is needed in order to reduce the self-heating effect. The simulated local stress at the gate edge of the drain side for the device with standard and field plate gate structure were compared, which would be relevant to the device mechanical failure. Other stress simulations focused on the intrinsic stress in the diamond capping layer impact on the device electrical behaviors. The simulated stress and electrical output characteristics were compared to experimental data obtained by micro-Raman spectroscopy and electrical characterization, respectively. Results showed that the intrinsic stress in the capping layer caused the non-uniform distribution of 2DEG in the channel and the access region. Besides the enhancement of the device power output, intrinsic stress in the capping layer can potentially improve the device reliability by modulating the local stress at the gate edge of the drain side. Finally, the surface, buffer, and barrier traps effects were simulated in this work. Pulsed measurements showed that long gates and distances between gate and drain contact can increase the gate lag ratio (decrease the current collapse). This was explained by simulations on the surface traps effect. The simulations on buffer traps effects focused on illustrating the dynamic trapping/detrapping in the buffer and the self-heating impact on the device transient drain current. A model was presented to describe the trapping and detrapping in the barrier. The trapping was the electron direct tunneling from the gate metal while the detrapping was the electron emission into the conduction band described by phonon-assisted tunneling. The reverse gate current was simulated based on this model, whose mechanism can be attributed to the temperature and electric field dependent electron emission in the barrier. Furthermore, the mechanism of the device bias via the self-heating and electric field impact on the electron emission and the transient drain current were also illustrated.

Novel poly(3-hydroxybutyrate) nanocomposites containing WS2 inorganic nanotubes with improved thermal, mechanical and tribological properties

Poly(3-hydroxybutyrate) (PHB) nanocomposites containing environmentally-friendly tungsten disulphide inorganic nanotubes (INTeWS2) have been successfully prepared by a simple solution blending method. The dynamic and isothermal crystallization studies by differential scanning calorimetry (DSC) demonstrated that the INTeWS2 exhibits much more prominent nucleation activity on the crystallization of PHB than specific nucleating agents or other nanoscale fillers. Both crystallization rate and crystallinity significantly increase in the nanocomposites compared to neat PHB. These changes occur without modifying the crystalline structure of PHB in the nanocomposites, as shown by wide-angle X-ray diffraction (WAXS) and infrared/Raman spectroscopy. Other parameters such as the Avrami exponent, the equilibrium melting temperature, global rate constant and the fold surface free energy of PHB chains in the nanocomposites were obtained from the calorimetric data in order to determine the influence of the INTeWS2 filler. The addition of INTeWS2 remarkably influences the energetics and kinetics of nucleation and growth of PHB, reducing the fold surface free energy by up to 20%. Furthermore, these nanocomposites also show an improvement in both tribological and mechanical (hardness and modulus) properties with respect to pure PHB evidenced by friction and nanoindentation tests, which is of important potential interest for industrial and medical applications.