Desarrollo metodológico mediante análisis experimental de la valoración de la degradación en situación de incendio de uniones carpinteras en estructuras de madera laminada encolada

En situación de incendio, los elementos estructurales de madera laminada encolada (?MLE?) sufren una degradación térmica que les lleva a una pérdida de sección portante. El Código Técnico de la Edificación cuantifica esta pérdida en 0,55 - 0,70 mm/min por cada cara sometida a carga, según especie y densidad, pero no propone una metodología específica para el cálculo de uniones carpinteras en situación de incendio. Para conocer el comportamiento de este tipo de uniones en situación de incendio, la Plataforma de Ingeniería de la Madera Estructural (PEMADE) de la Universidad de Santiago de Compostela, el Instituto de Ciencias de la Construcción Eduardo Torroja y el Centro Tecnológico CIDEMCO-Tecnalia han realizado conjuntamente una serie de ensayos experimentales sobre probetas ensambladas con unión carpintera del tipo cola de milano. Se han sometido las probetas a cargas térmicas variantes en el tiempo siguiendo la norma ISO 834-1, tal y como indica el CTE. Se registró usando termopares la variación de la temperatura a lo largo de la duración del ensayo. En este trabajo se expone en detalle la metodología desarrollada para realizar los ensayos, así como los primeros resultados obtenidos. In a fire event, glued laminated timber ("GLULAM") elements suffer a thermal degradation that produces in them a decrease of bearing section. Spanish technical building normative (?CTE?) quantify this decreasing from 0.55 to 0.70 mm / min according to species and density, but does not propose a specific methodology for calculating carpenter joints in a fire situation. In order to understand the behavior of such joints in a fire situation, the Platform for Structural Timber Engineering (PEMADE) of University of Santiago de Compostela; Institute of Science Construction Eduardo Torroja and Technology Center CIDEMCO-Tecnalia conducted together a series of experimental tests on glulam specimens assembled with a carpenter union type called ?dovetail?. Specimens were subjected to thermal loads varying in time according to ISO 834-1, as indicated by the CTE. Thermocouples were inserted in the specimens, recording the temperature variation along the length of the test. This paper details the methodology developed for the test and the first results.

Highly conductive coatings of carbon black/silica composites obtained by a sol-gel process

Conductive submicronic coatings of carbon black (CB)/silica composites have been prepared by a sol-gel process and deposited by spray-coating on glazed porcelain tiles. Stable CB dispersions with surfactant were rheologically characterized to determine the optimum CB-surfactant ratio. The composites were analyzed by Differential Thermal and Thermogravimetric Analysis and Hg-Porosimetry. Thin coatings were thermally treated in the temperature range of 300-500degC in air atmosphere. The microstructure of the coatings was determined by scanning electron microscopy and the structure evaluated by confocal Raman spectroscopy. The electrical characterization of the samples was carried out using dc intensity-voltage curves. The coatings exhibit good adhesion, high density and homogeneous distribution of the conductive filler (CB) in the insulate matrix (silica) that protects against the thermal degradation of the CB nanoparticles during the sintering process. As consequence, the composite coatings show the lowest resistivity values for CB-based films reported in the literature, with values of ~7times10 -5Omegam.

Mechanical characterisation of tungsten-1wt.% yttrium oxide as a function of temperature and atmosphere

This study evaluates the mechanical behaviour of an Y2O3-dispersed tungsten (W) alloy and compares it to a pure W reference material. Both materials were processed via mechanical alloying (MA) and subsequent hot isostatic pressing (HIP). We performed non-standard three-point bending (TPB) tests in both an oxidising atmosphere and vacuum across a temperature range from 77 K, obtained via immersion in liquid nitrogen, to 1473 K to determine the mechanical strength, yield strength and fracture toughness. This research aims to evaluate how the mechanical behaviour of the alloy is affected by oxides formed within the material at high temperatures, primarily from 873 K, when the materials undergo a massive thermal degradation. The results indicate that the alloy is brittle to a high temperature (1473 K) under both atmospheres and that the mechanical properties degrade significantly above 873 K. We also used Vickers microhardness tests and the dynamic modulus by impulse excitation technique (IET) to determine the elastic modulus at room temperature. Moreover, we performed nanoindentation tests to determine the effect of size on the hardness and elastic modulus; however, no significant differences were found. Additionally, we calculated the relative density of the samples to assess the porosity of the alloy. Finally, we analysed the microstructure and fracture surfaces of the tested materials via field emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM). In this way, the relationship between the macroscopic mechanical properties and micromechanisms of failure could be determined based on the temperature and oxides formed

Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55 µm with low optical degradation

Low optical degradation in GaInAsN(Sb)/GaAs quantum dots (QDs) p–i–n structures emitting up to 1.55 μm is presented in this paper. We obtain emission at different energies by means of varying N content from 1 to 4%. The samples show a low photoluminescence (PL) intensity degradation of only 1 order of magnitude when they are compared with pure InGaAs QD structures, even for an emission wavelength as large as 1.55 μm. The optimization studies of these structures for emission at 1.55 μm are reported in this work. High surface density and homogeneity in the QD layers are achieved for 50% In content by rapid decrease in the growth temperature after the formation of the nanostructures. Besides, the effect of N and Sb incorporation in the redshift and PL intensity of the samples is studied by post-growth rapid thermal annealing treatments. As a general conclusion, we observe that the addition of Sb to QD with low N mole fraction is more efficient to reach 1.55 μm and high PL intensity than using high N incorporation in the QD. Also, the growth temperature is determined to be an important parameter to obtain good emission characteristics. Finally, we report room temperature PL emission of InGaAsN(Sb)/GaAs at 1.4 μm.

Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT's reliability

AlGaN/GaN high electron mobility transistors (HEMT) are key devices for the next generation of high-power, high-frequency and high-temperature electronics applications. Although significant progress has been recently achieved [1], stability and reliability are still some of the main issues under investigation, particularly at high temperatures [2-3]. Taking into account that the gate contact metallization is one of the weakest points in AlGaN/GaN HEMTs, the reliability of Ni, Mo, Pt and refractory metal gates is crucial [4-6]. This work has been focused on the thermal stress and reliability assessment of AlGaN/GaN HEMTs. After an unbiased storage at 350 o C for 2000 hours, devices with Ni/Au gates exhibited detrimental IDS-VDS degradation in pulsed mode. In contrast, devices with Mo/Au gates showed no degradation after similar storage conditions. Further capacitance-voltage characterization as a function of temperature and frequency revealed two distinct trap-related effects in both kinds of devices. At low frequency (< 1MHz), increased capacitance near the threshold voltage was present at high temperatures and more pronounced for the Ni/Au gate HEMT and as the frequency is lower. Such an anomalous “bump” has been previously related to H-related surface polar charges [7]. This anomalous behavior in the C-V characteristics was also observed in Mo/Au gate HEMTs after 1000 h at a calculated channel temperatures of around from 250 o C (T2) up to 320 ºC (T4), under a DC bias (VDS= 25 V, IDS= 420 mA/mm) (DC-life test). The devices showed a higher “bump” as the channel temperature is higher (Fig. 1). At 1 MHz, the higher C-V curve slope of the Ni/Au gated HEMTs indicated higher trap density than Mo/Au metallization (Fig. 2). These results highlight that temperature is an acceleration factor in the device degradation, in good agreement with [3]. Interface state density analysis is being performed in order to estimate the trap density and activation energy.

On-site tests for the detection of potential induced degradation in modules

This paper presents different test alternatives which can be used on-site in a PV installation to detect potential induced degradation (PID) in modules. The testing procedures proposed are: thermal imaging; electroluminescence imaging; open circuit voltage measurements; operating voltage measurements; IV curve measurements; and dark IV curve measurements. Advantages and disadvantages of each test are reported.