Three dimensional (3D) microstructure-based modeling of interfacial decohesion in particle reinforced metal matrix composites

Modeling and prediction of the overall elastic–plastic response and local damage mechanisms in heterogeneous materials, in particular particle reinforced composites, is a very complex problem. Microstructural complexities such as the inhomogeneous spatial distribution of particles, irregular morphology of the particles, and anisotropy in particle orientation after secondary processing, such as extrusion, significantly affect deformation behavior. We have studied the effect of particle/matrix interface debonding in SiC particle reinforced Al alloy matrix composites with (a) actual microstructure consisting of angular SiC particles and (b) idealized ellipsoidal SiC particles. Tensile deformation in SiC particle reinforced Al matrix composites was modeled using actual microstructures reconstructed from serial sectioning approach. Interfacial debonding was modeled using user-defined cohesive zone elements. Modeling with the actual microstructure (versus idealized ellipsoids) has a significant influence on: (a) localized stresses and strains in particle and matrix, and (b) far-field strain at which localized debonding takes place. The angular particles exhibited higher degree of load transfer and are more sensitive to interfacial debonding. Larger decreases in stress are observed in the angular particles, because of the flat surfaces, normal to the loading axis, which bear load. Furthermore, simplification of particle morphology may lead to erroneous results.

SiGe/Si nanowire axial heterostructures grown by LPCVD using Ga-Au

The use of Ga-Au alloys of different compositions as metal catalysts for the growth of abrupt SiGe/Si nanowire axial heterostructures has been investigated. The heterostructures grown in a continuous process by just switching the gas precursors, show uniform nanowire diameters, almost abrupt compositional changes and no defects between the different sections. These features represent significant improvements over the results obtained using pure Au.

Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures

In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface.

Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

Room temperature electroreflectance (ER) spectroscopy has been used to study the fundamental properties of AlxInyGa${}_{1-x-y}$N/AlN/GaN heterostructures under different applied bias. The (0001)-oriented heterostructures were grown by metal-organic vapor phase epitaxy on sapphire. The band gap energy of the AlxInyGa${}_{1-x-y}{\rm{N}}$ layers has been determined from analysis of the ER spectra using Aspnes' model. The obtained values are in good agreement with a nonlinear band gap interpolation equation proposed earlier. Bias-dependent ER allows one to determine the sheet carrier density of the two-dimensional electron gas and the barrier field strength.