Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures
| Data(s) |
2015
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|---|---|
| Resumo |
Room temperature electroreflectance (ER) spectroscopy has been used to study the fundamental properties of AlxInyGa${}_{1-x-y}$N/AlN/GaN heterostructures under different applied bias. The (0001)-oriented heterostructures were grown by metal-organic vapor phase epitaxy on sapphire. The band gap energy of the AlxInyGa${}_{1-x-y}{\rm{N}}$ layers has been determined from analysis of the ER spectra using Aspnes' model. The obtained values are in good agreement with a nonlinear band gap interpolation equation proposed earlier. Bias-dependent ER allows one to determine the sheet carrier density of the two-dimensional electron gas and the barrier field strength. |
| Formato |
application/pdf |
| Identificador | |
| Idioma(s) |
eng |
| Relação |
http://oa.upm.es/40871/1/INVE_MEM_2015_223590.pdf http://iopscience.iop.org/article/10.1088/0268-1242/30/8/085014/meta info:eu-repo/grantAgreement/EC/FP7/PITN-GA-2008–213238 info:eu-repo/grantAgreement/EC/FP7/CSD2009–00046 info:eu-repo/grantAgreement/EC/FP7/TEC2012–38247 13–02-01394 14–02-31510 info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1088/0268-1242/30/8/085014 |
| Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
| Fonte |
Semiconductor Science and Technology, ISSN 0268-1242, 2015, Vol. 30, No. 8 |
| Palavras-Chave | #Telecomunicaciones |
| Tipo |
info:eu-repo/semantics/article Artículo PeerReviewed |
