A 800 kW I-V curve

This paper presents the measurement of the I-V curve of an 800 kW PV generator by means of an own-made capacitive load. Along the lines of some previous works, it is shown that an I-V curve analysis can also be applied to big PV generators and that, when measuring the operating conditions with reference modules and taking some precautions (especially regarding the operating cell temperature), it is still a useful tool for characterizing them and therefore can be incorporated into maintenance procedures. As far as we know, this is the largest I-V curve measured so far.

A 500-kW pv generator I-V curve

This paper presents the measurement of the I-V curve of a 500-kW PV generator by means of an own-made capacitive load. It is shown that I-V curve analysis can also be applied to big PV generators and that when measuring the operation conditions with reference modules and taking some precautions (especially regarding the operation cell temperature), it is still a useful tool for characterizing them and therefore can be incorporated into maintenance procedures. As far as we know, this is the largest I-V curve measured so far.

Electrical, photoelectrical and morphological properties of ZnO nanowire networks grown on SiO2 and on Si

ZnO nanofibre networks (NFNs) were grown by vapour transport method on Si-based substrates. One type of substrate was SiO2 thermally grown on Si and another consisted of a Si wafer onto which Si nanowires (NWs) had been grown having Au nanoparticles catalysts. The ZnO-NFN morphology was observed by scanning electron microscopy on samples grown at 600 °C and 720 °C substrate temperature, while an focused ion beam was used to study the ZnO NFN/Si NWs/Si and ZnO NFN/SiO2 interfaces. Photoluminescence, electrical conductance and photoconductance of ZnO-NFN was studied for the sample grown on SiO2. The photoluminescence spectra show strong peaks due to exciton recombination and lattice defects. The ZnO-NFN presents quasi-persistent photoconductivity effects and ohmic I-V characteristics which become nonlinear and hysteretic as the applied voltage is increased. The electrical conductance as a function of temperature can be described by a modified three dimensional variable hopping model with nanometer-ranged typical hopping distances.

In-situ and Ex-situ characterization of III-V semiconductor materials and solar cells upon 10 MEV proton irradiation

In this work we present the results and analysis of a 10 MeV proton irradiation experiment performed on III-V semiconductor materials and solar cells. A set of representative devices including lattice-matched InGaP/GaInAs/Ge triple junction solar cells and single junction GaAs and InGaP component solar cells and a Ge diode were irradiated for different doses. The devices were studied in-situ before and after each exposure at dark and 1 sun AM0 illumination conditions, using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V measurements. Furthermore, numerical simulation of the devices using D-AMPS-1D code together with calculations based on the TRIM software were performed in order to gain physical insight on the experimental results. The experiment also included the proton irradiation of an unprocessed Ge solar cell structure as well as the irradiation of a bare Ge(100) substrate. Ex-situ material characterization, after radioactive deactivation of the samples, includes Raman spectroscopy and spectral reflectivity.

Energía fotovoltaica: Trazador de curvas V-1 para seguimiento de módulos solares

Definición, construcción y puesta en marcha de un trazador de Curvas I-V en placas fotovoltaicas con fines docentes, comparándolo con otros métodos de medida. Para lo cual se han realizado diferentes ensayos: Barrido de Curva V-I módulo KC50 Barrido de Curva V-I módulo KC85GX-2P Barrido de Curva V-I con sombreado de células Barrido de Curva V-I con conexión en serie y en paralelo Barrido de Curva V-I sin diodos “by-pass” Barrido de Curva V-I con conexión en serie y en paralelo sin diodos “by-pass” Abstract Definition, construction and startup of a tracer IV curves in photovoltaic panels for teaching purposes, compared to other measurement methods. The trials completed can be summarized as follows: Sweep curve V-I module KC50. Sweep curve V-I module KC85GX-2P Sweep curve V-I with shaded cells. Sweep curve V-I with series and parallel connections. Sweep curve V-I without “by-pass” diode. Sweep curve V-I with series and parallel connections without “by-pass” diodes.

Why can't I measure the external quantum efficiency of the Ge subcell of my multijunction solar cell?

The measurement of the external quantum efficiency (EQE) of low bandgap subcells in a multijunction solar cell can be sometimes problematic. In particular, this paper describes a set of cases where the EQE of a Ge subcell in a conventional GaInP/GaInAs/Ge triple-junction solar cell cannot be fully measured. We describe the way to identify each case by tracing the I-V curve under the same light-bias conditions applied for the EQE measurement, together with the strategies that could be implemented to attain the best possible measurement of the EQE of the Ge subcell.