Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy

The high lattice mismatch between III-nitride binaries (InN, GaN and AlN) remains a key problem to grow high quality III-nitride heterostructures. Recent interest has been focused on the growth of high-quality InAlN layers, with approximately 18% of indium incorporation, in-plane lattice-matched (LM) to GaN. While a lot of work has been done by metal-organic vapour phase epitaxy (MOVPE) by Carlin and co-workers, its growth by molecular beam epitaxy (MBE) is still in infancy

Biomass Gasification in a Fluidized Bed Reactor: Effect of Temperature, Stoichiometric Ratio and Biomass Type

This paper investigates the gasification of two biomass types (pine wood and olive stones) in a laboratory scale bubbling fluidized bed reactor, in order to evaluate comparatively their potential in the production of syngas.