High sensitivity biosensors based on shear mode AIN resonators for in liquid operation

El diagnóstico y detección temprana de enfermedades son clave para reducir la tasa de mortalidad, las hospitalizaciones de larga duración y el desaprovechamiento de recursos. En los últimos años se ha impulsado, mediante un aumento de la financiación, el desarrollo de nuevos biosensores de bajo coste capaces de detectar y cuantificar cantidades muy pequeñas de especies biológicas de una forma barata y sencilla. El trabajo presentado en esta Tesis Doctoral describe la investigación llevada a cabo en el desarrollo de sensores gravimétricos basados en resonadores de ondas acústicas de volumen (BAW) de estructura maciza (SMR). Los dispositivos emplean películas delgadas de A1N como material piezoeléctrico y operan en modo de cizalladura, para así poder detectar especies biológicas en medio líquido. El principio de funcionamiento de estos sensores se basa en la variación que experimenta la frecuencia de resonancia al quedar una pequeña masa adherida a su superficie. Necesitan operar en modo de cizalladura para que su resonancia no se atenúe al trabajar en medio líquido, así como ofrecer una superficie capaz de ser funcionalizada específicamente para la especie biológica a detectar. El reto planteado en esta tesis requiere un acercamiento pluridisciplinar al problema que incluye el estudio de los diferentes materiales que constituyen la estructura multicapa que forma un SMR, el diseño y fabricación del dispositivo y del sistema de fluídica, la funcionalización bioquímica de la superficie del sensor, la demostración de la capacidad de detección de especies biológicas y finalmente el diseño y fabricación de la electrónica asociada para la detección de la señal eléctrica. Todas esas tareas han sido abordadas en las distintas etapas del desarrollo de esta tesis y las contribuciones más relevantes se describen en el documento. En el campo de desarrollo de los materiales, se propone un proceso en dos etapas para la pulverización reactiva de capas de A1N que contengan microcristales inclinados capaces de excitar el modo de cizalladura. Se caracteriza la velocidad acústica del modo de cizalladura en todos los materiales que componen la estructura, con el fin de poder obtener un diseño más adecuado del reflector acústico. Se propone un nuevo tipo de material aislante de alta impedancia acústica consistente en capas de W03 pulverizadas que presenta ciertas ventajas tecnológicas frente a las capas convencionales de Ta205. Respecto del diseño del transductor, se estudia la influencia que tienen los con tactos eléctricos extendidos del resonador necesarios para poder adaptar el sistema de fluídica a la estructura. Los resultados indican que es necesario trabajar sobre sustratos aislantes (tanto el soporte como el espejo acústico) para evitar efectos parásitos asociados al uso de capas metálicas bajo los electrodos del resonador que dañan su resonancia. Se analiza la influencia de las diferentes capas del dispositivo en el coeficiente de temperatura de la frecuencia (TCF) del resonador llegando a la conclusión de que las dos últimas capas del reflector acústico afectan significativamente al TCF del SMR, pudiendo reducirse ajusfando adecuadamente sus espesores. De acuerdo con los resultados de estos estudios, se han diseñado finalmente resonadores SMR operando a f .3 GHz en modo de cizalladura, con un área activa de 65000 /xm2, contactos eléctricos que se extienden f .7 mm y factores de calidad en líquido de f 50. Las extensiones eléctricas permiten adaptar el resonador a un sistema de fluídica de metacrilato. Para la detección de especies biológicas se realiza un montaje experimental que permite circular 800 ¡A por la superficie del sensor a través de un circuito cerrado que trabaja a volumen constante. La circulación de soluciones iónicas sobre el sensor descubierto pone de manifiesto que las altas frecuencias de operación previenen los cortocircuitos y por tanto el aislamiento de los electrodos es prescindible. Se desarrolla un protocolo ad-hoc de funcionalización basado en el proceso estándar APTESGlutaraldehído. Se proponen dos alternativas novedosas para la funcionalización de las áreas activas del sensor basadas en el uso de capas de oxidación de Ir02 y su activación a través de un plasma de oxígeno que no daña al dispositivo. Ambos procesos contribuyen a simplificar notablemente la funcionalización de los sensores gravimétricos. Se utilizan anticuerpos y aptámeros como receptores para detectar trombina, anticuerpo monoclonal IgG de ratón y bacteria sonicadas. Una calibración preliminar del sensor con depósitos de capas finas de Si02 de densidad y espesor conocidos permite obtener una sensibilidad de 1800 kHz/pg-cm2 y un límite de detección of 4.2 pg. Finalmente se propone el prototipo de un circuito electrónico de excitación y lectura de bajo coste diseñado empleando teoría de circuitos de microondas. Aunque su diseño y funcionamiento admite mejoras, constituye la última etapa de un sistema completo de bajo coste para el diagnóstico de especies biológicas basado en resonadores SMR de A1N. ABSTRACT Early diagnosis and detection of diseases are essential for reducing mortality rate and preventing long-term hospitalization and waste of resources. These requirements have boosted the efforts and funding on the research of accurate and reliable means for detection and quantification of biological species, also known as biosensors. The work presented in this thesis describes the development and fabrication of gravimetric biosensors based on piezoelectric AlN bulk acoustic wave (BAW) solidly mounted resonators (SMRs) for detection of biological species in liquid media. These type of devices base their sensing principles in the variation that their resonant frequency suffers when a mass is attached to their surface. They need to operate in the shear mode to maintain a strong resonance in liquid and an adequate functionalisation of their sensing area to guarantee that only the targeted molecules cause the shift. The challenges that need to be overcome to achieve piezoelectric BAW resonators for high sensitivity detection in fluids require a multidisciplinary approach, that include the study of the materials involved, the design of the device and the fluidic system, the biochemical functionalisation of the active area, the experimental proof-of-concept with different target species and the design of an electronic readout circuit. All this tasks have been tackled at different stages of the thesis and the relevant contributions are described in the document. In the field of materials, a two-stage sputtering deposition process has been developed to obtain good-quality AlN films with uniformly tilted grains required to excite the shear mode. The shear acoustic velocities of the materials composing the acoustic reflector have been accurately studied to ensure an optimum design of the reflector stack. WO3 sputtered films have been proposed as high acoustic impedance material for insulating acoustic reflectors. They display several technological advantages for the processing of the resonators. Regarding the design, a study of the influence of the electrical extensions necessary to fit a fluidic system on the performance of the devices has been performed. The results indicate that high resistivity substrates and insulating reflectors are necessary to avoid the hindering of the resonance due to the parasitic effects induced by the extensions. The influence of the different layers of the stack on the resultant TCF of the SMRs has also been investigated. The two layers of the reflector closer to the piezoelectric layer have a significant influence on the TCF, which can be reduced by modifying their thicknesses accordingly. The data provided by these studies has led to the final design of the devices, which operate at 1.3 GHz in the shear mode and display an active area of 65000 /xm2 and electrical extensions of 1.7 mm while keeping a Qahear=150 in liquid. The extensions enable to fit a custom-made fluidic system made of methacrylate. To perform the biosensing experiments, an experimental setup with a liquid closed circuit operating at constant flow has been developed. Buffers of ionic characteristics have been tested on non-isolated devices, revealing that high operation frequencies prevent the risk of short circuit. An ad-hoc functionalisation protocol based on the standard APTES - Glutaraldehyde process has been developed. It includes two new processes that simplify the fabrication of the transducers: the use of IrO2 as oxidation layer and its functionalisation through an O2 plasma treatment that does not damage the resonators. Both antibodies and aptamers are used as receptors. In liquid sensing proof-of-concept experiments with thrombin, IgG mouse monoclonal antibody and sonicated bacteria have been displayed. A preliminary calibration of the devices using SiO2 layers reveals a sensitivity of 1800 kHz/pg-cm2 and a limit of detection of 4.2 pg. Finally, a first prototype of a low-cost electronic readout circuit designed using a standard microwave approach has been developed. Although its performance can be significantly improved, it is an effective first approach to the final stage of a portable low-cost diagnostic system based on shear mode AlN SMRs.

Contribución a los arrays de antenas activos en microondas = Contribution to active array antennas at microwave bands

Esta tesis que tiene por título "Contribución a los arrays de antenas activos en banda X", ha sido desarrollada por el estudiante de doctorado Gonzalo Expósito Domínguez, ingeniero de telecomunicación en el Grupo de Radiación del Departamento de Señales, Sistemas y Radiocomunicaciones de la ETSI de Telecomunicación de la Universidad Politécnica de Madrid bajo la dirección de los doctores Manuel Sierra Castañer y José Manuel Fernández González. Esta tesis contiene un profundo estudio del arte en materia de antenas activas en el campo de apuntamiento electrónico. Este estudio comprende desde los fundamentos de este tipo de antenas, problemas de operación y limitaciones hasta los sistemas actuales más avanzados. En ella se identifican las partes críticas en el diseño y posteriormente se llevan a la práctica con el diseño, simulación y construcción de un subarray de una antena integrada en el fuselaje de un avión para comunicaciones multimedia por satélite que funciona en banda X. El prototipo consta de una red de distribución multihaz de banda ancha y una antena planar. El objetivo de esta tesis es el de aplicar nuevas técnicas al diseño de antenas de apuntamiento electrónico. Es por eso que las contribuciones originales son la aplicación de barreras electromagnéticas entre elementos radiantes para reducir los acoplamientos mutuos en arrays de exploración electrónica y el diseño de redes desfasadoras sencillas en las que no son necesarios complejos desfasadores para antenas multihaz. Hasta la fecha, las barreras electromagnéticas, Electronic Band Gap (EBG), se construyen en sustratos de permitividad alta con el fin de aumentar el espacio disponible entre elementos radiantes y reducir el tamaño de estas estructuras. Sin embargo, la utilización de sustratos de alta permitividad aumenta la propagación por ondas de superficie y con ellas el acoplo mutuo. Utilizando sustratos multicapa y colocando la vía de las estructuras en su borde, en vez de en su centro, se consigue reducir el tamaño sin necesidad de usar sustratos de alta permitividad, reducir la eficiencia de radiación de la antena o aumentar la propagación por ondas de superficie. La última parte de la tesis se dedica a las redes conmutadoras y desfasadoras para antenas multihaz. El diseño de las redes de distribución para antenas son una parte crítica ya que se comportan como un atenuador a la entrada de la cadena receptora, modificando en gran medida la figura de ruido del sistema. Las pérdidas de un desfasador digital varían con el desfase introducido, por ese motivo es necesario caracterizar y calibrar los dispositivos correctamente. Los trabajos presentados en este manuscrito constan de un desfasador reflectivo con un conmutador doble serie paralelo para igualar las pérdidas de inserción en los dos estados y también un conmutador de una entrada y dos salidas cuyos puertos están adaptados en todo momento independientemente del camino del conmutador para evitar las reflexiones y fugas entre redes o elementos radiantes. El tomo finaliza con un resumen de las publicaciones en revistas científicas y ponencias en congresos, nacionales e internacionales, el marco de trabajo en el que se ha desarrollado, las colaboraciones que se han realizado y las líneas de investigación futuras. ABSTRACT This thesis was carried out in the Radiation Group of the Signals, Systems and Radiocomunications department of ETSI de Telecomunicación from Technical University of Madrid. Its title is "Contribution to active array antennas at X band" and it is developed by Gonzalo Expósito Domínguez, Electrical Engineer MsC. under the supervision of Prof. Dr. Manuel Sierra Castañer and Dr. José Manuel Fernández González. This thesis is focused on active antennas, specifically multibeam and electronic steering antenas. In the first part of the thesis a thorough description of the state of the art is presented. This study compiles the fundamentals of this antennas, operation problems and limits, up to the breakthrough applications. The critical design problems are described to use them eventually in the design, simulation and prototyping of an airborne steering array antenna for satellite communication at X band. The main objective of this thesis is to apply new techniques to the design of electronically steering antennas. Therefore the new original contributions are the application of Electromagnetic Band Gap materials (EBG) between radiating elements to reduce the mutual coupling when phase shift between elements exist and phase shifting networks where special characteristics are required. So far, the EBG structures have been constructed with high permitivity substrates in order to increase the available space between radiating elements and reduce the size of the structures. However, the surface wave propagation modes are enhanced and therefore the mutual coupling increases when high permitivity substrates are used. By using multilayered substrates and edge location via, the size is reduced meanwhile low permitivity substrates are used without reducing the radiation efficiency or enhancing the surface propagation modes. The last part of the thesis is focused on the phase shifting distribution networks for multibeam antennas. This is a critical part in the antenna design because the insertion loss in the distribution network behaves as an attenuator located in the first place in a receiver chain. The insertion loss will affect directly to the receiver noise figure and the insertion loss in a phase shifter vary with the phase shift. Therefore the devices must be well characterized and calibrated in order to obtain a properly operation. The work developed in this thesis are a reflective phase shifter with a series-shunt switch in order to make symmetrical the insertion loss for the two states and a complex Single Pole Double Through (SPDT) with matched ports in order to reduce the reflections and leakage between feeding networks and radiating elements. The end of this Ph D. dissertation concludes with a summary of the publications in national and international conferences and scientific journals, the collaborations carried out along the thesis and the future research lines.

Sputter optimization of AlN on diamond substrates for high frequency SAW resonators

The AlN/diamond structure is an attractive combination for SAW devices and its application at high frequencies. In this work, the synthesis of AlN thin films by reactive sputtering has been optimized on diamond substrates in order to process high frequency devices. Polished microcrystalline and as-grown nanocrystalline diamond substrates have been used to deposit AlN of different thickness under equal sputtering conditions. For the smoother substrates, the FWHM of the rocking curve of the (002) AlN peak varies from 3.8° to 2.7° with increasing power. SAW one port resonators have been fabricated on these films, whose electrical characterization (in terms of S11 parameters) is reported.

Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators

AlN/diamond heterostructures are very promising for high frequency surface acoustic wave (SAW) resonators. In their design, the thickness of the piezoelectric film is one of the key parameters. On the other hand, the film material quality and, hence, the device performance, also depend on that thickness. In this work, polished microcrystalline diamond substrates have been used to deposit AlN films by reactive sputtering, from 150 nm up to 3 μm thick. A high degree of the c-axis orientation has been obtained in all cases. SAW one port resonators at high frequency have been fabricated on these films with a proper combination of the film thickness and transducer size.

Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

We investigated the atomic surface properties of differently prepared silicon and germanium (100) surfaces during metal-organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD), in particular the impact of the MOVPE ambient, and applied reflectance anisotropy/difference spectroscopy (RAS/RDS) in our MOVPE reactor to in-situ watch and control the preparation on the atomic length scale for subsequent III-V-nucleation. The technological interest in the predominant opto-electronic properties of III-V-compounds drives the research for their heteroepitaxial integration on more abundant and cheaper standard substrates such as Si(100) or Ge(100). In these cases, a general task must be accomplished successfully, i.e. the growth of polar materials on non-polar substrates and, beyond that, very specific variations such as the individual interface formation and the atomic step structure, have to be controlled. Above all, the method of choice to grow industrial relevant high-performance device structures is MOVPE, not normally compatible with surface and interface sensitive characterization tools, which are commonly based on ultrahigh vacuum (UHV) ambients. A dedicated sample transfer system from MOVPE environment to UHV enabled us to benchmark the optical in-situ spectra with results from various surfaces science instruments without considering disruptive contaminants. X-ray photoelectron spectroscopy (XPS) provided direct observation of different terminations such as arsenic and phosphorous and verified oxide removal under various specific process parameters. Absorption lines in Fourier-transform infrared (FTIR) spectra were used to identify specific stretch modes of coupled hydrides and the polarization dependence of the anti-symmetric stretch modes distinguished different dimer orientations. Scanning tunnelling microscopy (STM) studied the atomic arrangement of dimers and steps and tip-induced H-desorption proved the saturation of dangling bonds after preparati- n. In-situ RAS was employed to display details transiently such as the presence of H on the surface at lower temperatures (T <; 800°C) and the absence of Si-H bonds at elevated annealing temperature and also surface terminations. Ge buffer growth by the use of GeH4 enables the preparation of smooth surfaces and leads to a more pronounced amplitude of the features in the spectra which indicates improvements of the surface quality.

Variación de las características mecánicas de armaduras de alta ductilidad B500SD en función de su grado de corrosión / Mechanical properties variation of B500SD high ductility reinforcement regarding its corrosion degree

Los efectos de la corrosión sobre las armaduras se manifiestan por la pérdida de sección y la variación de las propiedades mecánicas relacionadas con la ductilidad. En este trabajo se han ensayado a tracción 96 barras de acero B500SD que previamente se han sometido a niveles variables de corrosión. Los resultados muestran que los alargamientos de las barras disminuyen y el cociente entre la tensión máxima y el límite elástico aumenta conforme el nivel de corrosión avanza. A partir del estudio del efecto de entalla y de la distinta constitución metalográfica del acero a nivel de sección debido a su procedimiento de fabricación se pueden explicar los fenómenos anteriores.

Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates

This work describes the electron-beam (e-beam) lithography process developed to manufacture nano interdigital transducers (IDTs) to be used in high frequency (GHz) surface acoustic wave (SAW) applications. The combination of electron-beam (e-beam) lithography and lift-off process is shown to be effective in fabricating well-defined IDT finger patterns with a line width below 100 nm with a good yield. Working with insulating piezoelectric substrates brings about e-beam deflection. It is also shown how a very thin organic anti-static layer works well in avoiding this charge accumulation during e-beam lithography on the resist layer. However, the use of this anti-static layer is not required with the insulating piezoelectric layer laying on a semiconducting substrate such as highly doped silicon. The effect of the e-beam dose on a number of different layers (of insulating, insulating on semiconducting, semiconducting, and conductive natures) is provided. Among other advantages, the use of reduced e-beam doses increases the manufacturing time. The principal aim of this work is to explain the interrelation among e-beam dose, substrate nature and IDT structure. An extensive study of the e-beam lithography of long IDT-fingers is provided, in a wide variety of electrode widths, electrode numbers and electrode pitches. It is worthy to highlight that this work shows the influence of the e-beam dose on five substrates of different conductive nature

Optimization of a label-free biosensor vertically characterized based on a periodic lattice of high aspect ratio SU-8 nano-pillars with a simplified 2D theoretical model

We have recently demonstrated a biosensor based on a lattice of SU8 pillars on a 1 μm SiO2/Si wafer by measuring vertically reflectivity as a function of wavelength. The biodetection has been proven with the combination of Bovine Serum Albumin (BSA) protein and its antibody (antiBSA). A BSA layer is attached to the pillars; the biorecognition of antiBSA involves a shift in the reflectivity curve, related with the concentration of antiBSA. A detection limit in the order of 2 ng/ml is achieved for a rhombic lattice of pillars with a lattice parameter (a) of 800 nm, a height (h) of 420 nm and a diameter(d) of 200 nm. These results correlate with calculations using 3D-finite difference time domain method. A 2D simplified model is proposed, consisting of a multilayer model where the pillars are turned into a 420 nm layer with an effective refractive index obtained by using Beam Propagation Method (BPM) algorithm. Results provided by this model are in good correlation with experimental data, reaching a reduction in time from one day to 15 minutes, giving a fast but accurate tool to optimize the design and maximizing sensitivity, and allows analyzing the influence of different variables (diameter, height and lattice parameter). Sensitivity is obtained for a variety of configurations, reaching a limit of detection under 1 ng/ml. Optimum design is not only chosen because of its sensitivity but also its feasibility, both from fabrication (limited by aspect ratio and proximity of the pillars) and fluidic point of view. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Introducing Nuclear Energy to High-School Students: The Spanish Young Generation in Nuclear (Jóvenes Nucleares) Lectures

One of the main goals of Spanish Young Generation (JJNN) is to spread knowledge about nuclear energy, not only pointing out its advantages and its role in our society, but also trying to correct some of the ideas that are due to the biased information and to the lack of knowledge. With this goal in mind, lectures were given in several high schools, aimed at students ranging from 14 to 18 years old. This paper explains the experience accumulated during those talks and the conclusions that can be drawn, so as to better focus the communication about nuclear energy, especially the one aimed at a young public. In order to evaluate the degree of knowledge and information on a specific topic of a given group of individuals, statistical methods must be used. At the beginning of each lecture (and sometimes at the end, in order to evaluate the impact of the talk) the students were submitted to a short survey conducted by Spanish Young Generation. It consisted in eight questions, dealing with the relation between the main environmental issues (global warming, acid rain, radioactive waste…) and nuclear energy. The answers can be surprising, especially for professionals of the nuclear field who, since they are so familiar with this topic, often forget that this is just the case of a minority of people. A better knowledge of the degree of information of a given group enables to focus and personalize the communication. Another communication tool is the direct contact with students: it starts with their questions, which can then lead to a small debate. If the surveys inform about the topics they are unaware of, the direct exchange with them enables to find the most effective way to provide them the information. Of course, it depends a lot on the public attending the talk (age, background…) and on the debate following the talk: a good communication, adapted to the public, is necessary. Therefore, the outcome of the performed exercise is that Spanish teenagers have still a lack of knowledge about nuclear energy. We can learn that items that are evident for nuclear young professionals are unknown for high school teenagers

Growth of AlN oriented films on insulating substrates.

This work describes the structural and piezoelectric assessment of aluminum nitride (AlN) thin films deposited by pulsed-DC reactive sputtering on insulating substrates. We investigate the effect of different insulating seed layers on AlN properties (crystallinity, residual stress and piezoelectric activity). The seed layers investigated, silicon nitride (Si3N4), silicon dioxide (SiO2), amorphous tantalum oxide (Ta2O5), and amorphous or nano-crystalline titanium oxide (TiO2) are deposited on glass plates to a thickness lower than 100 nm. Before AlN films deposition, their surface is pre-treated with a soft ionic cleaning, either with argon or nitrogen ions. Only AlN films grown of TiO2 seed layers exhibit a significant piezoelectric activity to be used in acoustic device applications. Pure c-axis oriented films, with FWHM of rocking curve of 6º, stress below 500 MPa, and electromechanical coupling factors measured in SAW devices of 1.25% are obtained. The best AlN films are achieved on amorphous TiO2 seed layers deposited at high target power and low sputtering pressure. On the other hand, AlN films deposited on Si3N4, SiO2 and TaOx exhibit a mixed orientation, high stress and very low piezoelectric activity, which invalidate their use in acoustic devices.

Dynamic Effects On Culverts for High Speed Trains

Culverts are very common in recent railway lines. Wild life corridors and drainage conducts often fall in this category of partially buried structures. Their dynamic behavior has received far less attention than other structures such as bridges but its large number makes that study an interesting challenge from the point of view of safety and savings. In this paper a complete study of a culvert, including on-site measurements as well as numerical modelling, will be presented. The structure belongs to the high speed railway line linking Segovia and Valladolid, in Spain. The line was opened to traffic in 2004. Its dimensions (3x3m) are the most frequent along the line. Other factors such as reduced overburden (0.6m) and an almost right angle with the track axis make it an interesting example to extract generalized conclusions. On site measurements have been performed in the structure recording the dynamic response at selected points of the structure during the passage of high speed trains at speeds ranging between 200 and 300km/h. The measurements by themselves provide a good insight into the main features of the dynamic behaviour of the structure. A 3D finite element model of the structure, representing its key features was also studied as it allows further understanding of the dynamic response to the train loads . In the paper the discrepancies between predicted and measured vibration levels will be analyzed and some advices on numerical modelling will be proposed

MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates

InN layers: MBE growth issues Growth of InN-based thin films: InN/InGaN QWS on GaN Growth of InN-based nanorods ● Self Self-assembled assembled InN InN nanorods nanorods onon different different substrates substrates ● Self-assembled InGaN nanorods ● Broad- Broad-emission emission nanostructures ● Self Self--assembled assembled InGaN InGaN--based based Qdisks Qdisks ● Selective area growth (SAG) of InGaN Qdisks

Sensitivity of a distributed temperature-radiation index melt model based on AWS observations and surface energy balance fluxes, Hurd Peninsula glaciers, Livingston Island, Antarctica

We use an automatic weather station and surface mass balance dataset spanning four melt seasons collected on Hurd Peninsula Glaciers, South Shetland Islands, to investigate the point surface energy balance, to determine the absolute and relative contribution of the various energy fluxes acting on the glacier surface and to estimate the sensitivity of melt to ambient temperature changes. Long-wave incoming radiation is the main energy source for melt, while short-wave radiation is the most important flux controlling the variation of both seasonal and daily mean surface energy balance. Short-wave and long-wave radiation fluxes do, in general, balance each other, resulting in a high correspondence between daily mean net radiation flux and available melt energy flux. We calibrate a distributed melt model driven by air temperature and an expression for the incoming short-wave radiation. The model is calibrated with the data from one of the melt seasons and validated with the data of the three remaining seasons. The model results deviate at most 140 mm w.e. from the corresponding observations using the glaciological method. The model is very sensitive to changes in ambient temperature: a 0.5 ◦ C increase results in 56 % higher melt rates.

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

An n(++)-GaAs/p(++)-AlGaAs tunnel junction with a peak current density of 10 100Acm(-2) is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500Acm(-2) and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations.

Ultra high frequency thin film saw devices

Durante los últimos años el flujo de datos en la transmisión que tiene lugar en los sistemas de comunicación ha aumentado considerablemente de forma que día a día se requieren más aplicaciones trabajando en un rango de frecuencias muy alto (3-30 GHz). Muchos de estos sistemas de comunicación incluyen dispositivos de onda acústica superficial (SAW) y por tanto se hace necesario el aumento de frecuencia a la que éstos trabajan. Pero este incremento de frecuencia de los dispositivos SAW no sólo es utilizado en los sistemas de comunicación, varios tipos de sensores, por ejemplo, aumentan su sensibilidad cuando la frecuencia a la que trabajan también lo hace. Tradicionalmente los dispositivos SAW se han fabricado sobre cuarzo, LiNbO3 y LiTaO3 principalmente. Sin embargo la principal limitación de estos materiales es su velocidad SAW. Además, debido a la alta temperatura a la que se depositan no pueden ser integrados en la tecnología de fabricación CMOS. El uso de la tecnología de capa delgada, en la que un material piezoeléctrico es depositado sobre un substrato, se está utilizando en las últimas décadas para incrementar la velocidad SAW de la estructura y poder obtener dispositivos trabajando en el rango de frecuencias requerido en la actualidad. Por otra parte, esta tecnología podría ser integrada en el proceso de fabricación CMOS. Durante esta tesis nos hemos centrado en la fabricación de dispositivos SAW trabajando a muy alta frecuencia. Para ello, utilizando la tecnología de capa delgada, hemos utilizado la estructura nitruro de aluminio (AlN) sobre diamante que permite conseguir velocidades SAW del sustrato que no se pueden alcanzar con otros materiales. El depósito de AlN se realizó mediante sputtering reactivo. Durante esta tesis se han realizado diferentes experimentos para optimizar dicho depósito de forma que se han obtenido los parámetros óptimos para los cuales se pueden obtener capas de AlN de alta calidad sobre cualquier tipo de sustrato. Además todo el proceso se realizó a baja temperatura para que el procesado de estos dispositivos pueda ser compatible con la tecnología CMOS. Una vez optimizada la estructura AlN/diamante, mediante litografía por haz de electrones se fabricaron resonadores SAW de tamaño nanométrico que sumado a la alta velocidad resultante de la combinación AlN/diamante nos ha permitido obtener dispositivos trabajando en el rango de 10-28 GHz con un alto factor de calidad y rechazo fuera de la banda. Estás frecuencias y prestaciones no han sido alcanzadas por el momento en resonadores de este tipo. Por otra parte, se han utilizado estos dispositivos para fabricar sensores de presión de alta sensibilidad. Estos dispositivos son afectados altamente por los cambios de temperatura. Se realizó también un exhaustivo estudio de cómo se comportan en temperatura estos resonadores, entre -250ºC y 250ºC (rango de temperaturas no estudiado hasta el momento) diferenciándose dos regiones una a muy baja temperatura en la que el dispositivo muestra un coeficiente de retraso en frecuencia (TCF) relativamente bajo y otra a partir de los -100ºC en la que el TCF es similar al observado en la bibliografía. Por tanto, durante esta tesis se ha optimizado el depósito de AlN sobre diamante para que sea compatible con la tecnología CMOS y permita el procesado de dispositivos trabajando a muy alta frecuencia con altas prestaciones para comunicaciones y sensores. ABSTRACT The increasing volume of information in data transmission systems results in a growing demand of applications working in the super-high-frequency band (3–30 GHz). Most of these systems work with surface acoustic wave (SAW) devices and thus there is a necessity of increasing their resonance frequency. Moreover, sensor application includes this kind of devices. The sensitivity of them is proportional with its frequency. Traditionally, quartz, LiNbO3 and LiTaO3 have been used in the fabrication of SAW devices. These materials suffer from a variety of limitations and in particular they have low SAW velocity as well as being incompatible with the CMOS technology. In order to overcome these problems, thin film technology, where a piezoelectric material is deposited on top of a substrate, has been used during the last decades. The piezoelectric/substrate structure allows to reach the frequencies required nowadays and could be compatible with the mass electronic production CMOS technology. This thesis work focuses on the fabrication of SAW devices working in the super-high-frequency range. Thin film technology has been used in order to get it, especially aluminum nitride (AlN) deposited by reactive sputtering on diamond has been used to increase the SAW velocity. Different experiments were carried out to optimize the parameters for the deposit of high quality AlN on any kind of substrates. In addition, the system was optimized under low temperature and thus this process is CMOS compatible. Once the AlN/diamond was optimized, thanks to the used e-beam lithography, nanometric SAW resonators were fabricated. The combination of the structure and the size of the devices allow the fabrication of devices working in the range of 10-28 GHz with a high quality factor and out of band rejection. These high performances and frequencies have not been reached so far for this kind of devices. Moreover, these devices have been used as high sensitivity pressure sensors. They are affected by temperature changes and thus a wide temperature range (-250ºC to 250ºC) study was done. From this study two regions were observed. At very low temperature, the temperature coefficient of frequency (TCF) is low. From -100ºC upwards the TCF is similar to the one appearing in the literature. Therefore, during this thesis work, the sputtering of AlN on diamond substrates was optimized for the CMOS compatible fabrication of high frequency and high performance SAW devices for communication and sensor application.