Thickness dependence of critical temperature in Mo/Au bilayers

We report on the sensitivity of the superconducting critical temperature (TC) to layer thickness, as well as on TC reproducibility in Mo/Au bilayers. Resistivity measurements on samples with a fixed Au thickness (dAu) and Mo thickness (dMo) ranging from 50 to 250 nm, and with a fixed dMo and different dAu thickness are shown. Experimental data are discussed in the framework of Martinis model, whose application to samples with dAu above their coherence length is analysed in detail. Results show a good coupling between normal and superconducting layers and excellent TC reproducibility, allowing to accurately correlate Mo layer thickness and bilayer TC.

Size and dimensionality effects in superconducting Mo thin films

Molybdenum is a low Tc, type I superconductor whose fundamental properties are poorly known. Its importance as an essential constituent of new high performance radiation detectors, the so-called transition edge sensors (TESs) calls for better characterization of this superconductor, especially in thin film form. Here we report on a study of the basic superconducting features of Mo thin films as a function of their thickness. The resistivity is found to rise and the critical temperature decreases on decreasing film thickness, as expected. More relevant, the critical fields along and perpendicular to the film plane are markedly different, thickness dependent and much larger than the thermodynamic critical field of Mo bulk. These results are consistent with a picture of type II 2D superconducting films, and allow estimates of the fundamental superconducting lengths of Mo. The role of morphology in determining the 2D and type II character of the otherwise type I molybdenum is discussed. The possible consequences of this behaviour on the performance of radiation detectors are also addressed

Fabrication process of Mo/Au TES at RT

We report on the fabrication details of TES based on Mo/Au bilayers. The Mo layer is deposited by radio frequency (RF) sputtering and capped with a sputter deposited thin Au protection layer. Afterwards, a second Au layer of suitable (lower) resistivity is deposited ex‐situ by e‐beam evaporation, until completion of the total desired Au thickness. The deposition was performed at room temperature (RT) on LPCVD Si3 N4 membranes. Such a deposition procedure is very reproducible and allow controlling the critical temperature (Tc) and normal electrical resistance (RN ) of the Mo/Au bilayer. The process is optimized to achieve low stress bilayers, thus avoiding the undesirable curvature of the membranes. Bilayers are patterned using photolithographic techniques and wet etching procedures. Mo superconducting paths are used to contact the Mo/Au bilayers, thus ensuring good electrical conductivity and thermal isolation. The entire fabrication process let to stable and reproducible sensors with required and tunable functional properties

Characterization of a Mo/Au thermometer for ATHENA

The first dark characterization of a thermometer fabricated with our Mo/Au bilayers to be used as a transition edge sensor is presented. High-quality, stress-free Mo layers, whose thickness is used to tune the critical temperature (TC ) down to 100 mK, are deposited by sputtering at room temperature (RT ) on Si3N4 bulk and membranes, and protected from degradation with a 15-nm sputtered Au layer. An extra layer of high-quality Au is deposited by ex situ e-beam to ensure low residual resistance. The thermometer is patterned on a membrane using standard photolithographic techniques and wet etching processes, and is contacted through Mo paths, displaying a sharp superconducting transition (α ≈ 600). Results show a good coupling between Mo and Au layers and excellent TC reproducibility, allowing to accurately correlate dM o and TC . Since dAu is bigger than ξM for all analyzed samples, bilayer residual resistance can be modified without affecting TC . Finally, first current to voltage measurements at different temperatures are measured and analyzed, obtaining the corresponding characterization parameters.

Exploring strategic farming choices to respond to mitigation and adaptation to climate change

Las alteraciones del sistema climático debido al aumento de concentraciones de gases de efecto invernadero (GEI) en la atmósfera, tendrán implicaciones importantes para la agricultura, el medio ambiente y la sociedad. La agricultura es una fuente importante de emisiones de gases de efecto invernadero (globalmente contribuye al 12% del total de GEI), y al mismo tiempo puede ser parte de la solución para mitigar las emisiones y adaptarse al cambio climático. Las acciones frente al desafío del cambio climático deben priorizar estrategias de adaptación y mitigación en la agricultura dentro de la agenda para el desarrollo de políticas. La agricultura es por tanto crucial para la conservación y el uso sostenible de los recursos naturales, que ya están sometidos a impactos del cambio climático, al mismo tiempo que debe suministrar alimentos para una población creciente. Por tanto, es necesaria una coordinación entre las actuales estrategias de política climática y agrícola. El concepto de agricultura climáticamente inteligente ha surgido para integrar todos estos servicios de la producción agraria. Al evaluar opciones para reducir las amenazas del cambio climático para la agricultura y el medio ambiente, surgen dos preguntas de investigación: • ¿Qué información es necesaria para definir prácticas agrarias inteligentes? • ¿Qué factores influyen en la implementación de las prácticas agrarias inteligentes? Esta Tesis trata de proporcionar información relevante sobre estas cuestiones generales con el fin de apoyar el desarrollo de la política climática. Se centra en sistemas agrícolas Mediterráneos. Esta Tesis integra diferentes métodos y herramientas para evaluar las alternativas de gestión agrícola y políticas con potencial para responder a las necesidades de mitigación y adaptación al cambio climático. La investigación incluye enfoques cuantitativos y cualitativos e integra variables agronómicas, de clima y socioeconómicas a escala local y regional. La investigación aporta una recopilación de datos sobre evidencia experimental existente, y un estudio integrado sobre el comportamiento de los agricultores y las posibles alternativas de cambio (por ejemplo, la tecnología, la gestión agrícola y la política climática). Los casos de estudio de esta Tesis - el humedal de Doñana (S España) y la región de Aragón (NE España) - permiten ilustrar dos sistemas Mediterráneos representativos, donde el uso intensivo de la agricultura y las condiciones semiáridas son ya una preocupación. Por este motivo, la adopción de estrategias de mitigación y adaptación puede desempeñar un papel muy importante a la hora de encontrar un equilibrio entre la equidad, la seguridad económica y el medio ambiente en los escenarios de cambio climático. La metodología multidisciplinar de esta tesis incluye una amplia gama de enfoques y métodos para la recopilación y el análisis de datos. La toma de datos se apoya en la revisión bibliográfica de evidencia experimental, bases de datos públicas nacionales e internacionales y datos primarios recopilados mediante entrevistas semi-estructuradas con los grupos de interés (administraciones públicas, responsables políticos, asesores agrícolas, científicos y agricultores) y encuestas con agricultores. Los métodos de análisis incluyen: meta-análisis, modelos de gestión de recursos hídricos (modelo WAAPA), análisis multicriterio para la toma de decisiones, métodos estadísticos (modelos de regresión logística y de Poisson) y herramientas para el desarrollo de políticas basadas en la ciencia. El meta-análisis identifica los umbrales críticos de temperatura que repercuten en el crecimiento y el desarrollo de los tres cultivos principales para la seguridad alimentaria (arroz, maíz y trigo). El modelo WAAPA evalúa el efecto del cambio climático en la gestión del agua para la agricultura de acuerdo a diferentes alternativas políticas y escenarios climáticos. El análisis multicriterio evalúa la viabilidad de las prácticas agrícolas de mitigación en dos escenarios climáticos de acuerdo a la percepción de diferentes expertos. Los métodos estadísticos analizan los determinantes y las barreras para la adopción de prácticas agrícolas de mitigación. Las herramientas para el desarrollo de políticas basadas en la ciencia muestran el potencial y el coste para reducir GEI mediante las prácticas agrícolas. En general, los resultados de esta Tesis proporcionan información sobre la adaptación y la mitigación del cambio climático a nivel de explotación para desarrollar una política climática más integrada y ayudar a los agricultores en la toma de decisiones. Los resultados muestran las temperaturas umbral y la respuesta del arroz, el maíz y el trigo a temperaturas extremas, siendo estos valores de gran utilidad para futuros estudios de impacto y adaptación. Los resultados obtenidos también aportan una serie de estrategias flexibles para la adaptación y la mitigación a escala local, proporcionando a su vez una mejor comprensión sobre las barreras y los incentivos para su adopción. La capacidad de mejorar la disponibilidad de agua y el potencial y el coste de reducción de GEI se han estimado para estas estrategias en los casos de estudio. Estos resultados podrían ayudar en el desarrollo de planes locales de adaptación y políticas regionales de mitigación, especialmente en las regiones Mediterráneas. ABSTRACT Alterations in the climatic system due to increased atmospheric concentrations of greenhouse gas emissions (GHG) are expected to have important implications for agriculture, the environment and society. Agriculture is an important source of GHG emissions (12 % of global anthropogenic GHG), but it is also part of the solution to mitigate emissions and to adapt to climate change. Responses to face the challenge of climate change should place agricultural adaptation and mitigation strategies at the heart of the climate change agenda. Agriculture is crucial for the conservation and sustainable use of natural resources, which already stand under pressure due to climate change impacts, increased population, pollution and fragmented and uncoordinated climate policy strategies. The concept of climate smart agriculture has emerged to encompass all these issues as a whole. When assessing choices aimed at reducing threats to agriculture and the environment under climate change, two research questions arise: • What information defines smart farming choices? • What drives the implementation of smart farming choices? This Thesis aims to provide information on these broad questions in order to support climate policy development focusing in some Mediterranean agricultural systems. This Thesis integrates methods and tools to evaluate potential farming and policy choices to respond to mitigation and adaptation to climate change. The assessment involves both quantitative and qualitative approaches and integrates agronomic, climate and socioeconomic variables at local and regional scale. The assessment includes the collection of data on previous experimental evidence, and the integration of farmer behaviour and policy choices (e.g., technology, agricultural management and climate policy). The case study areas -- the Doñana coastal wetland (S Spain) and the Aragón region (NE Spain) – illustrate two representative Mediterranean regions where the intensive use of agriculture and the semi-arid conditions are already a concern. Thus the adoption of mitigation and adaptation measures can play a significant role for reaching a balance among equity, economic security and the environment under climate change scenarios. The multidisciplinary methodology of this Thesis includes a wide range of approaches for collecting and analysing data. The data collection process include revision of existing experimental evidence, public databases and the contribution of primary data gathering by semi-structured interviews with relevant stakeholders (i.e., public administrations, policy makers, agricultural advisors, scientist and farmers among others) and surveys given to farmers. The analytical methods include meta-analysis, water availability models (WAAPA model), decision making analysis (MCA, multi-criteria analysis), statistical approaches (Logistic and Poisson regression models) and science-base policy tools (MACC, marginal abatement cost curves and SOC abatement wedges). The meta-analysis identifies the critical temperature thresholds which impact on the growth and development of three major crops (i.e., rice, maize and wheat). The WAAPA model assesses the effect of climate change for agricultural water management under different policy choices and climate scenarios. The multi-criteria analysis evaluates the feasibility of mitigation farming practices under two climate scenarios according to the expert views. The statistical approaches analyses the drivers and the barriers for the adoption of mitigation farming practices. The science-base policy tools illustrate the mitigation potential and cost effectiveness of the farming practices. Overall, the results of this Thesis provide information to adapt to, and mitigate of, climate change at farm level to support the development of a comprehensive climate policy and to assist farmers. The findings show the key temperature thresholds and response to extreme temperature effects for rice, maize and wheat, so such responses can be included into crop impact and adaptation models. A portfolio of flexible adaptation and mitigation choices at local scale are identified. The results also provide a better understanding of the stakeholders oppose or support to adopt the choices which could be used to incorporate in local adaptation plans and mitigation regional policy. The findings include estimations for the farming and policy choices on the capacity to improve water supply reliability, abatement potential and cost-effective in Mediterranean regions.

Assessment of CTF boiling transition and critical heat flux modeling capabilities using the OECD/NRC BFBT and PSBT benchmark databases

The need to refine models for best-estimate calculations, based on good-quality experimental data, has been expressed in many recent meetings in the field of nuclear applications. The modeling needs arising in this respect should not be limited to the currently available macroscopic methods but should be extended to next-generation analysis techniques that focus on more microscopic processes. One of the most valuable databases identified for the thermalhydraulics modeling was developed by the Nuclear Power Engineering Corporation (NUPEC), Japan. From 1987 to 1995, NUPEC performed steady-state and transient critical power and departure from nucleate boiling (DNB) test series based on the equivalent full-size mock-ups. Considering the reliability not only of the measured data, but also other relevant parameters such as the system pressure, inlet sub-cooling and rod surface temperature, these test series supplied the first substantial database for the development of truly mechanistic and consistent models for boiling transition and critical heat flux. Over the last few years the Pennsylvania State University (PSU) under the sponsorship of the U.S. Nuclear Regulatory Commission (NRC) has prepared, organized, conducted and summarized the OECD/NRC Full-size Fine-mesh Bundle Tests (BFBT) Benchmark. The international benchmark activities have been conducted in cooperation with the Nuclear Energy Agency/Organization for Economic Co-operation and Development (NEA/OECD) and Japan Nuclear Energy Safety (JNES) organization, Japan. Consequently, the JNES has made available the Boiling Water Reactor (BWR) NUPEC database for the purposes of the benchmark. Based on the success of the OECD/NRC BFBT benchmark the JNES has decided to release also the data based on the NUPEC Pressurized Water Reactor (PWR) subchannel and bundle tests for another follow-up international benchmark entitled OECD/NRC PWR Subchannel and Bundle Tests (PSBT) benchmark. This paper presents an application of the joint Penn State University/Technical University of Madrid (UPM) version of the well-known subchannel code COBRA-TF, namely CTF, to the critical power and departure from nucleate boiling (DNB) exercises of the OECD/NRC BFBT and PSBT benchmarks

Analysis of noise temperature sensitivity for the design of a broadband thermal noise primary standard

A broadband primary standard for thermal noise measurements is presented and its thermal and electromagnetic behaviour is analysed by means of a novel hybrid analytical?numerical simulation methodology. The standard consists of a broadband termination connected to a 3.5mm coaxial airline partially immersed in liquid nitrogen and is designed in order to obtain a low reflectivity and a low uncertainty in the noise temperature. A detailed sensitivity analysis is made in order to highlight the critical characteristics that mostly affect the uncertainty in the noise temperature, and also to determine the manufacturing and operation tolerances for a proper performance in the range 10MHz to 26.5 GHz. Aspects such as the thermal bead design, the level of liquid nitrogen or the uncertainties associated with the temperatures, the physical properties of the materials in the standard and the simulation techniques are discussed.

The Phase Space as a New Representation of the Dynamical Behaviour of Temperature and Enthalpy in a Reefer monitored with a Multidistributed Sensors Network

The study of temperature gradients in cold stores and containers is a critical issue in the food industry for the quality assurance of products during transport, as well as forminimizing losses. The objective of this work is to develop a new methodology of data analysis based on phase space graphs of temperature and enthalpy, collected by means of multidistributed, low cost and autonomous wireless sensors and loggers. A transoceanic refrigerated transport of lemons in a reefer container ship from Montevideo (Uruguay) to Cartagena (Spain) was monitored with a network of 39 semi-passive TurboTag RFID loggers and 13 i-button loggers. Transport included intermodal transit from transoceanic to short shipping vessels and a truck trip. Data analysis is carried out using qualitative phase diagrams computed on the basis of Takens?Ruelle reconstruction of attractors. Fruit stress is quantified in terms of the phase diagram area which characterizes the cyclic behaviour of temperature. Areas within the enthalpy phase diagram computed for the short sea shipping transport were 5 times higher than those computed for the long sea shipping, with coefficients of variation above 100% for both periods. This new methodology for data analysis highlights the significant heterogeneity of thermohygrometric conditions at different locations in the container.

Electron temperature versus laser intensity times wavelength squared: a comparison of theory and experiments

The peak temperature in the corona of plasma ejected by a laser-irradiated slab is discussed in terms of a one-electron-temperature model. Both heat-flux saturation and pulse rise-time effects are considered;the intensity in the rising half of the pulse is approximated by a linear function of time, I(t) = Iot/r. The temperature is found to be proportional to (IQX2)273 and a function of I0X4/r. Above a certain value of I0X4/T, the plasma presents two characteristic temperatures (at saturation and at the critical surface) which can be identified with experimentally observed cold- and hot-electron temperatures. The results are compared with extensive experimental data available for both nd and CO2 lasers, I0(W'cnf2) X2 (/um) starting around 1012. The agreement is good if substantial flux inhibition is assumed (flux-limit factor f = 0.03), and fails for I0X2 above 1O1S. Results for both ablation pressure and mass ablation rate are also given.

A critical force constant of the structural phase transition in quartz

Long wavelength optical phonons of quartz were analyzed by a Born-Von Karman model not previously used. It was found that only one force constant associated with the turning of the Si-O bonds has a critical effect on the soft-mode frequency and the α-β transition in quartz. The square of the soft-mode frequency was found to depend linearly on this force constant which has the temperature dependence K(T)= -5.33+225.3x10-4(851-T)2/3 in units of 104 dyn/cm2.

Two-temperature model of the coronal irradiated pellets

A two electron-temperature, quasi-steady model of the corona of a laser-ablated pellet is considered. Ablation pressure, critical radius and mass flow rate are determined. Results are close to those obtained with heat flux saturation well below the free-streaming limit.

Optimum high temperature strength of two-dimensional nanocomposites

High-temperature nanoindentation was used to reveal nano-layer size effects on the hardness of two-dimensional metallic nanocomposites. We report the existence of a critical layer thickness at which strength achieves optimal thermal stability. Transmission electron microscopy and theoretical bicrystal calculations show that this optimum arises due to a transition from thermally activated glide within the layers to dislocation transmission across the layers. We demonstrate experimentally that the atomic-scale properties of the interfaces profoundly affect this critical transition. The strong implications are that interfaces can be tuned to achieve an optimum in high temperature strength in layered nanocomposite structures.

Effect of strain and magnetic field on the critical current and electric resistance of the joints between HTS coated conductors

Engineering of devices and systems such as magnets, fault current limiters or cables, based on High Temperature Superconducting wires requires a deep characterization of the possible degradation of their properties by handling at room temperature as well as during the service life thus establishing the limits for building up functional devices and systems. In the present work we report our study regarding the mechanical behavior of spliced joints between commercial HTS coated conductors based on YBCO at room temperature and service temperature, 77 K. Tensile tests under axial stress and the evolution of the critical current and the electric resistance of the joints have been measured. The complete strain contour for the tape and the joint has been obtained by using Digital Image Correlation. Also, tensile tests under external magnetic field have been performed and the effect of the applied field on the critical current and the electric resistance of the joints has been studied. Finally, a preliminary numerical study by means of Finite Element Method (FEM) of the mechanical behavior of the joints between commercial HTS is presented.

Effect of strain and magnetic field on the critical current and electric resistance of the joints between HTS coated conductors

Engineering of devices and systems such as magnets, fault current limiters or cables, based on High Temperature Superconducting wires requires a deep characterization of the possible degradation of their properties by handling at room temperature as well as during the service life thus establishing the limits for building up functional devices and systems. In the present work we report our study regarding the mechanical behavior of spliced joints between commercial HTS coated conductors based on YBCO at room temperature and service temperature, 77 K. Tensile tests under axial stress and the evolution of the critical current and the electric resistance of the joints have been measured. The complete strain contour for the tape and the joints has been obtained by using Digital Image Correlation. Also, tensile tests under external magnetic field have been performed and the effect of the applied field on the critical current and the electric resistance of the joints has been studied. Additionally, fatigue tests under constant cyclic stress and loading-unloading ramps have been carried out in order to evaluate the electromechanical behavior of the joints and the effect of maximum applied stress on the critical current. Finally, a preliminary numerical study by means of the Finite Element Method (FEM) of the electromechanical behavior of the joints between commercial HTS is presented.

Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects

Los transistores de alta movilidad electrónica basados en GaN han sido objeto de una extensa investigación ya que tanto el GaN como sus aleaciones presentan unas excelentes propiedades eléctricas (alta movilidad, elevada concentración de portadores y campo eléctrico crítico alto). Aunque recientemente se han incluido en algunas aplicaciones comerciales, su expansión en el mercado está condicionada a la mejora de varios asuntos relacionados con su rendimiento y habilidad. Durante esta tesis se han abordado algunos de estos aspectos relevantes; por ejemplo, la fabricación de enhancement mode HEMTs, su funcionamiento a alta temperatura, el auto calentamiento y el atrapamiento de carga. Los HEMTs normalmente apagado o enhancement mode han atraído la atención de la comunidad científica dedicada al desarrollo de circuitos amplificadores y conmutadores de potencia, ya que su utilización disminuiría significativamente el consumo de potencia; además de requerir solamente una tensión de alimentación negativa, y reducir la complejidad del circuito y su coste. Durante esta tesis se han evaluado varias técnicas utilizadas para la fabricación de estos dispositivos: el ataque húmedo para conseguir el gate-recess en heterostructuras de InAl(Ga)N/GaN; y tratamientos basados en flúor (plasma CF4 e implantación de F) de la zona debajo de la puerta. Se han llevado a cabo ataques húmedos en heteroestructuras de InAl(Ga)N crecidas sobre sustratos de Si, SiC y zafiro. El ataque completo de la barrera se consiguió únicamente en las muestras con sustrato de Si. Por lo tanto, se puede deducir que la velocidad de ataque depende de la densidad de dislocaciones presentes en la estructura, ya que el Si presenta un peor ajuste del parámetro de red con el GaN. En relación a los tratamientos basados en flúor, se ha comprobado que es necesario realizar un recocido térmico después de la fabricación de la puerta para recuperar la heteroestructura de los daños causados durante dichos tratamientos. Además, el estudio de la evolución de la tensión umbral con el tiempo de recocido ha demostrado que en los HEMTs tratados con plasma ésta tiende a valores más negativos al aumentar el tiempo de recocido. Por el contrario, la tensión umbral de los HEMTs implantados se desplaza hacia valores más positivos, lo cual se atribuye a la introducción de iones de flúor a niveles más profundos de la heterostructura. Los transistores fabricados con plasma presentaron mejor funcionamiento en DC a temperatura ambiente que los implantados. Su estudio a alta temperatura ha revelado una reducción del funcionamiento de todos los dispositivos con la temperatura. Los valores iniciales de corriente de drenador y de transconductancia medidos a temperatura ambiente se recuperaron después del ciclo térmico, por lo que se deduce que dichos efectos térmicos son reversibles. Se han estudiado varios aspectos relacionados con el funcionamiento de los HEMTs a diferentes temperaturas. En primer lugar, se han evaluado las prestaciones de dispositivos de AlGaN/GaN sobre sustrato de Si con diferentes caps: GaN, in situ SiN e in situ SiN/GaN, desde 25 K hasta 550 K. Los transistores con in situ SiN presentaron los valores más altos de corriente drenador, transconductancia, y los valores más bajos de resistencia-ON, así como las mejores características en corte. Además, se ha confirmado que dichos dispositivos presentan gran robustez frente al estrés térmico. En segundo lugar, se ha estudiado el funcionamiento de transistores de InAlN/GaN con diferentes diseños y geometrías. Dichos dispositivos presentaron una reducción casi lineal de los parámetros en DC en el rango de temperaturas de 25°C hasta 225°C. Esto se debe principalmente a la dependencia térmica de la movilidad electrónica, y también a la reducción de la drift velocity con la temperatura. Además, los transistores con mayores longitudes de puerta mostraron una mayor reducción de su funcionamiento, lo cual se atribuye a que la drift velocity disminuye más considerablemente con la temperatura cuando el campo eléctrico es pequeño. De manera similar, al aumentar la distancia entre la puerta y el drenador, el funcionamiento del HEMT presentó una mayor reducción con la temperatura. Por lo tanto, se puede deducir que la degradación del funcionamiento de los HEMTs causada por el aumento de la temperatura depende tanto de la longitud de la puerta como de la distancia entre la puerta y el drenador. Por otra parte, la alta densidad de potencia generada en la región activa de estos transistores conlleva el auto calentamiento de los mismos por efecto Joule, lo cual puede degradar su funcionamiento y Habilidad. Durante esta tesis se ha desarrollado un simple método para la determinación de la temperatura del canal basado en medidas eléctricas. La aplicación de dicha técnica junto con la realización de simulaciones electrotérmicas han posibilitado el estudio de varios aspectos relacionados con el autocalentamiento. Por ejemplo, se han evaluado sus efectos en dispositivos sobre Si, SiC, y zafiro. Los transistores sobre SiC han mostrado menores efectos gracias a la mayor conductividad térmica del SiC, lo cual confirma el papel clave que desempeña el sustrato en el autocalentamiento. Se ha observado que la geometría del dispositivo tiene cierta influencia en dichos efectos, destacando que la distribución del calor generado en la zona del canal depende de la distancia entre la puerta y el drenador. Además, se ha demostrado que la temperatura ambiente tiene un considerable impacto en el autocalentamiento, lo que se atribuye principalmente a la dependencia térmica de la conductividad térmica de las capas y sustrato que forman la heterostructura. Por último, se han realizado numerosas medidas en pulsado para estudiar el atrapamiento de carga en HEMTs sobre sustratos de SiC con barreras de AlGaN y de InAlN. Los resultados obtenidos en los transistores con barrera de AlGaN han presentado una disminución de la corriente de drenador y de la transconductancia sin mostrar un cambio en la tensión umbral. Por lo tanto, se puede deducir que la posible localización de las trampas es la región de acceso entre la puerta y el drenador. Por el contrario, la reducción de la corriente de drenador observada en los dispositivos con barrera de InAlN llevaba asociado un cambio significativo en la tensión umbral, lo que implica la existencia de trampas situadas en la zona debajo de la puerta. Además, el significativo aumento del valor de la resistencia-ON y la degradación de la transconductancia revelan la presencia de trampas en la zona de acceso entre la puerta y el drenador. La evaluación de los efectos del atrapamiento de carga en dispositivos con diferentes geometrías ha demostrado que dichos efectos son menos notables en aquellos transistores con mayor longitud de puerta o mayor distancia entre puerta y drenador. Esta dependencia con la geometría se puede explicar considerando que la longitud y densidad de trampas de la puerta virtual son independientes de las dimensiones del dispositivo. Finalmente se puede deducir que para conseguir el diseño óptimo durante la fase de diseño no sólo hay que tener en cuenta la aplicación final sino también la influencia que tiene la geometría en los diferentes aspectos estudiados (funcionamiento a alta temperatura, autocalentamiento, y atrapamiento de carga). ABSTRACT GaN-based high electron mobility transistors have been under extensive research due to the excellent electrical properties of GaN and its related alloys (high carrier concentration, high mobility, and high critical electric field). Although these devices have been recently included in commercial applications, some performance and reliability issues need to be addressed for their expansion in the market. Some of these relevant aspects have been studied during this thesis; for instance, the fabrication of enhancement mode HEMTs, the device performance at high temperature, the self-heating and the charge trapping. Enhancement mode HEMTs have become more attractive mainly because their use leads to a significant reduction of the power consumption during the stand-by state. Moreover, they enable the fabrication of simpler power amplifier circuits and high-power switches because they allow the elimination of negativepolarity voltage supply, reducing significantly the circuit complexity and system cost. In this thesis, different techniques for the fabrication of these devices have been assessed: wet-etching for achieving the gate-recess in InAl(Ga)N/GaN devices and two different fluorine-based treatments (CF4 plasma and F implantation). Regarding the wet-etching, experiments have been carried out in InAl(Ga)N/GaN grown on different substrates: Si, sapphire, and SiC. The total recess of the barrier was achieved after 3 min of etching in devices grown on Si substrate. This suggests that the etch rate can critically depend on the dislocations present in the structure, since the Si exhibits the highest mismatch to GaN. Concerning the fluorine-based treatments, a post-gate thermal annealing was required to recover the damages caused to the structure during the fluorine-treatments. The study of the threshold voltage as a function of this annealing time has revealed that in the case of the plasma-treated devices it become more negative with the time increase. On the contrary, the threshold voltage of implanted HEMTs showed a positive shift when the annealing time was increased, which is attributed to the deep F implantation profile. Plasma-treated HEMTs have exhibited better DC performance at room temperature than the implanted devices. Their study at high temperature has revealed that their performance decreases with temperature. The initial performance measured at room temperature was recovered after the thermal cycle regardless of the fluorine treatment; therefore, the thermal effects were reversible. Thermal issues related to the device performance at different temperature have been addressed. Firstly, AlGaN/GaN HEMTs grown on Si substrate with different cap layers: GaN, in situ SiN, or in situ SiN/GaN, have been assessed from 25 K to 550 K. In situ SiN cap layer has been demonstrated to improve the device performance since HEMTs with this cap layer have exhibited the highest drain current and transconductance values, the lowest on-resistance, as well as the best off-state characteristics. Moreover, the evaluation of thermal stress impact on the device performance has confirmed the robustness of devices with in situ cap. Secondly, the high temperature performance of InAlN/GaN HEMTs with different layouts and geometries have been assessed. The devices under study have exhibited an almost linear reduction of the main DC parameters operating in a temperature range from room temperature to 225°C. This was mainly due to the thermal dependence of the electron mobility, and secondly to the drift velocity decrease with temperature. Moreover, HEMTs with large gate length values have exhibited a great reduction of the device performance. This was attributed to the greater decrease of the drift velocity for low electric fields. Similarly, the increase of the gate-to-drain distance led to a greater reduction of drain current and transconductance values. Therefore, this thermal performance degradation has been found to be dependent on both the gate length and the gate-to-drain distance. It was observed that the very high power density in the active region of these transistors leads to Joule self-heating, resulting in an increase of the device temperature, which can degrade the device performance and reliability. A simple electrical method have been developed during this work to determine the channel temperature. Furthermore, the application of this technique together with the performance of electro-thermal simulations have enabled the evaluation of different aspects related to the self-heating. For instance, the influence of the substrate have been confirmed by the study of devices grown on Si, SiC, and Sapphire. HEMTs grown on SiC substrate have been confirmed to exhibit the lowest self-heating effects thanks to its highest thermal conductivity. In addition to this, the distribution of the generated heat in the channel has been demonstrated to be dependent on the gate-to-drain distance. Besides the substrate and the geometry of the device, the ambient temperature has also been found to be relevant for the self-heating effects, mainly due to the temperature-dependent thermal conductivity of the layers and the substrate. Trapping effects have been evaluated by means of pulsed measurements in AlGaN and InAIN barrier devices. AlGaN barrier HEMTs have exhibited a de crease in drain current and transconductance without measurable threshold voltage change, suggesting the location of the traps in the gate-to-drain access region. On the contrary, InAIN barrier devices have showed a drain current associated with a positive shift of threshold voltage, which indicated that the traps were possibly located under the gate region. Moreover, a significant increase of the ON-resistance as well as a transconductance reduction were observed, revealing the presence of traps on the gate-drain access region. On the other hand, the assessment of devices with different geometries have demonstrated that the trapping effects are more noticeable in devices with either short gate length or the gate-to-drain distance. This can be attributed to the fact that the length and the trap density of the virtual gate are independent on the device geometry. Finally, it can be deduced that besides the final application requirements, the influence of the device geometry on the performance at high temperature, on the self-heating, as well as on the trapping effects need to be taken into account during the device design stage to achieve the optimal layout.