InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy

This work reports on the growth by molecular beam epitaxy and characterization of InN/InGaN multiple quantum wells (MQWs) emitting at 1.5 μm. X-ray diffraction (XRD) spectra show satellite peaks up to the second order. Estimated values of well (3 nm) and barrier (9 nm) thicknesses were derived from transmission electron microscopy and the fit between experimental data and simulated XRD spectra. Transmission electron microscopy and XRD simulations also confirmed that the InGaN barriers are relaxed with respect to the GaN template, while the InN MQWs grew under biaxial compression on the InGaN barriers. Low temperature (14 K) photoluminescence measurements reveal an emission from the InN MQWs at 1.5 μm. Measurements as a function of temperature indicate the existence of localized states, probably due to InN quantum wells’ thickness fluctuations as observed by transmission electron microscopy.

Broadband Channel Long Delay Cluster Measurements and Analysis at 2.4GHz in Subway Tunnels

The delay caused by the reflected ray in broadband communication has a great influence on the communications in subway tunnel. This paper presents measurements taken in subway tunnels at 2.4 GHz, with 5 MHz bandwidth. According to propagation characteristics of tunnel, the measurements were carried out with a frequency domain channel sounding technique, in three typical scenarios: line of sight (LOS), Non-line-of-sight (NLOS) and far line of sight (FLOS), which lead to different delay distributions. Firstly IFFT was chosen to get channel impulse response (CIR) h(t) from measured three-dimensional transfer functions. Power delay profile (PDP) was investigated to give an overview of broadband channel model. Thereafter, a long delay caused by the obturation of tunnel is observed and investigated in all the scenarios. The measurements show that the reflection can be greatly remained by the tunnel, which leads to long delay cluster where the reflection, but direct ray, makes the main contribution for radio wave propagation. Four important parameters: distribution of whole PDP power, first peak arriving time, reflection cluster duration and PDP power distribution of reflection cluster were studied to give a detailed description of long delay characteristic in tunnel. This can be used to ensure high capacity communication in tunnels

New broadband thermal noise primary standard in coaxial technology

A broadband primary standard for thermal noise measurements is presented and its thermal and electromagnetic behavior is analyzed by means of analytical and numerical simulation techniques. It consists of a broadband termination connected to a 3.5mm coaxial airline partially immersed in liquid Nitrogen. The main innovative part of the device is the thermal bead between inner and outer conductors, designed for obtaining a proper thermal contact and to keep low both its contribution to the total thermal noise and its reflectivity. A sensitivity analysis is realized in order to fix the manufacturing tolerances for a proper performance in the range 10MHz¿26.5GHz.

Analysis of noise temperature sensitivity for the design of a broadband thermal noise primary standard

A broadband primary standard for thermal noise measurements is presented and its thermal and electromagnetic behaviour is analysed by means of a novel hybrid analytical?numerical simulation methodology. The standard consists of a broadband termination connected to a 3.5mm coaxial airline partially immersed in liquid nitrogen and is designed in order to obtain a low reflectivity and a low uncertainty in the noise temperature. A detailed sensitivity analysis is made in order to highlight the critical characteristics that mostly affect the uncertainty in the noise temperature, and also to determine the manufacturing and operation tolerances for a proper performance in the range 10MHz to 26.5 GHz. Aspects such as the thermal bead design, the level of liquid nitrogen or the uncertainties associated with the temperatures, the physical properties of the materials in the standard and the simulation techniques are discussed.

Temperature controlled light-emitting diode lamp for photovoltaic rural applications

In recent years, interest in light-emitting diode (LED) lighting has been growing because of its high efficacy, lifetime and ruggedness. This paper proposes a better adaptation of LED lamps to the technical requirements of photovoltaic lighting domestic systems, whose main quality criteria are reliability and that behave as voltage power supplies. As the key element of reliability in LED lamps is temperature, a solution is proposed for driving LED lamps using voltage sources, such as photovoltaic system batteries, with a control architecture based on pulse width modulation signal that regulates the current applied according to the LED lamp temperature. A prototype of the LED lamp has been implemented and tested to show its good performance at different temperatures and at different battery voltages.

Broadband access in complex environments: LTE on railway

This paper assesses the main challenges associated with the propagation and channel modeling of broadband radio systems in a complex environment of high speed and metropolitan railways. These challenges comprise practical simulation, modeling interferences, radio planning, test trials and performance evaluation in different railway scenarios using Long Term Evolution (LTE) as test case. This approach requires several steps; the first is the use of a radio propagation simulator based on ray-tracing techniques to accurately predict propagation. Besides the radio propagation simulator, a complete test bed has been constructed to assess LTE performance, channel propagation conditions and interference with other systems in real-world environments by means of standard-compliant LTE transmissions. Such measurement results allowed us to evaluate the propagation and performance of broadband signals and to test the suitability of LTE radio technology for complex railway scenarios.

300 GHz CMOS video detection using broadband and active planar antennas

Using CMOS transistors for terahertz detection is currently a disruptive technology that offers the direct integration of a terahertz detector with video preamplifiers. The detectors are based on the resistive mixer concept and performance mainly depends on the following parameters: type of antenna, electrical parameters (gate to drain capacitor and channel length of the CMOS device) and foundry. Two different 300 GHz detectors are discussed: a single transistor detector with a broadband antenna and a differential pair driven by a resonant patch antenna.

Dynamical characterization of monolithic MOPAs emitting at 1.5 μ�m

Eye-safety requirements in important applications like LIDAR or Free Space Optical Communications make specifically interesting the generation of high power, short optical pulses at 1.5 um. Moreover, high repetition rates allow reducing the error and/or the measurement time in applications involving pulsed time-of-flight measurements, as range finders, 3D scanners or traffic velocity controls. The Master Oscillator Power Amplifier (MOPA) architecture is an interesting source for these applications since large changes in output power can be obtained at GHz rates with a relatively small modulation of the current in the Master Oscillator (MO). We have recently demonstrated short optical pulses (100 ps) with high peak power (2.7 W) by gain switching the MO of a monolithically integrated 1.5 um MOPA. Although in an integrated MOPA the laser and the amplifier are ideally independent devices, compound cavity effects due to the residual reflectance at the different interfaces are often observed, leading to modal instabilities such as self-pulsations.

Analysis of mode competition in a monolithic master- oscillator power‐amplifier emitting at 1.5 μm

The optical and radio-frequency spectra of a monolithic master-oscillator power-amplifier emitting at 1.5 ?m have been analyzed in a wide range of steady-state injection conditions. The analysis of the spectral maps reveals that, under low injection current of the master oscillator, the device operates in two essentially different operation modes depending on the current injected into the amplifier section. The regular operation mode with predominance of the master oscillator alternates with lasing of the compound cavity modes allowed by the residual reflectance of the amplifier front facet. The quasi-periodic occurrence of these two regimes as a function of the amplifier current has been consistently interpreted in terms of a thermally tuned competition between the modes of the master oscillator and the compound cavity modes.

Intermediate Band Solar Cell with Extreme Broadband Spectrum Quantum Efficiency

We report, for the first time, about an intermediate band solar cell implemented with InAs/AlGaAs quantum dots whose photoresponse expands from 250 to ~ 6000  nm. To our knowledge, this is the broadest quantum efficiency reported to date for a solar cell and demonstrates that the intermediate band solar cell is capable of producing photocurrent when illuminated with photons whose energy equals the energy of the lowest band gap. We show experimental evidence indicating that this result is in agreement with the theory of the intermediate band solar cell, according to which the generation recombination between the intermediate band and the valence band makes this photocurrent detectable. © 2015 American Physical Society

Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range

The growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN layers (planar) of similar composition and thickness. The devices are driven under pulsed operation up to 1300 A/cm2 without traces of efficiency droop. Electroluminescence spectra show a very small blue shift with increasing current, (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells.

Broadband active differential array for the mid-frequency SKA band

This paper presents the design and characterization process of an active array demonstrator for the mid-frequency range (i.e., 300 MHz-1000 MHz) of the future Square Kilometre Array (SKA) radio telescope. This demonstrator, called FIDA3 (FG-IGN: Fundación General Instituto Geográfico Nacional - Differential Active Antenna Array), is part of the Spanish contribution for the SKA project. The main advantages provided by this design include the use of a dielectric-free structure, and the use of a fully-differential receiver in which differential low-noise amplifiers (LNAs) are directly connected to the balanced tapered-slot antennas (TSAs). First, the radiating structure and the differential low-noise amplifiers were separately designed and measured, obtaining good results (antenna elements with low voltage standing-wave ratios, array scanning capabilities up to 45°, and noise temperatures better than 52 K with low-noise amplifiers at room temperature). The potential problems due to the differential nature of the proposed solution are discussed, so some effective methods to overcome such limitations are proposed. Second, the complete active antenna array receiving system was assembled, and a 1 m2 active antenna array tile was characterized.

Self assembled and ordered group III nitride nanocolumnar structures for light emitting applications

El objetivo de este trabajo es un estudio profundo del crecimiento selectivo de nanoestructuras de InGaN por epitaxia de haces moleculares asistido por plasma, concentrandose en el potencial de estas estructuras como bloques constituyentes en LEDs de nueva generación. Varias aproximaciones al problema son discutidas; desde estructuras axiales InGaN/GaN, a estructuras core-shell, o nanoestructuras crecidas en sustratos con orientaciones menos convencionales (semi polar y no polar). La primera sección revisa los aspectos básicos del crecimiento auto-ensamblado de nanocolumnas de GaN en sustratos de Si(111). Su morfología y propiedades ópticas son comparadas con las de capas compactas de GaN sobre Si(111). En el caso de las columnas auto-ensambladas de InGaN sobre Si(111), se presentan resultados sobre el efecto de la temperatura de crecimiento en la incorporación de In. Por último, se discute la inclusión de nanodiscos de InGaN en las nanocolumnas de GaN. La segunda sección revisa los mecanismos básicos del crecimiento ordenado de nanoestructuras basadas en GaN, sobre templates de GaN/zafiro. Aumentando la relación III/V localmente, se observan cambios morfológicos; desde islas piramidales, a nanocolumnas de GaN terminadas en planos semipolares, y finalmente, a nanocolumnas finalizadas en planos c polares. Al crecer nanodiscos de InGaN insertados en las nanocolumnas de GaN, las diferentes morfologias mencionadas dan lugar a diferentes propiedades ópticas de los nanodiscos, debido al diferente carácter (semi polar o polar) de los planos cristalinos involucrados. La tercera sección recoge experimentos acerca de los efectos que la temperatura de crecimiento y la razón In/Ga tienen en la morfología y emisión de nanocolumnas ordenadas de InGaN crecidas sobre templates GaN/zafiro. En el rango de temperaturas entre 650 y 750 C, la incorporacion de In puede modificarse bien por la temperatura de crecimiento, o por la razón In/Ga. Controlar estos factores permite la optimización de la longitud de onda de emisión de las nanocolumnas de InGaN. En el caso particular de la generación de luz blanca, se han seguidos dos aproximaciones. En la primera, se obtiene emisión amarilla-blanca a temperatura ambiente de nanoestructuras donde la región de InGaN consiste en un gradiente de composiciones de In, que se ha obtenido a partir de un gradiente de temperatura durante el crecimiento. En la segunda, el apilamiento de segmentos emitiendo en azul, verde y rojo, consiguiendo la integración monolítica de estas estructuras en cada una de las nanocolumnas individuales, da lugar a emisores ordenados con un amplio espectro de emisión. En esta última aproximación, la forma espectral puede controlarse con la longitud (duración del crecimiento) de cada uno de los segmentos de InGaN. Más adelante, se presenta el crecimiento ordenado, por epitaxia de haces moleculares, de arrays de nanocolumnas que son diodos InGaN/GaN cada una de ellas, emitiendo en azul (441 nm), verde (502 nm) y amarillo (568 nm). La zona activa del dispositivo consiste en una sección de InGaN, de composición constante nominalmente y longitud entre 250 y 500 nm, y libre de defectos extendidos en contraste con capas compactas de InGaN de similares composiciones y espesores. Los espectros de electroluminiscencia muestran un muy pequeño desplazamiento al azul al aumentar la corriente inyectada (desplazamiento casi inexistente en el caso del dispositivo amarillo), y emisiones ligeramente más anchas que en el caso del estado del arte en pozos cuánticos de InGaN. A continuación, se presenta y discute el crecimiento ordenado de nanocolumnas de In(Ga)N/GaN en sustratos de Si(111). Nanocolumnas ordenadas emitiendo desde el ultravioleta (3.2 eV) al infrarrojo (0.78 eV) se crecieron sobre sustratos de Si(111) utilizando una capa compacta (“buffer”) de GaN. La morfología y eficiencia de emisión de las nanocolumnas emitiendo en el rango espectral verde pueden ser mejoradas ajustando las relaciones In/Ga y III/N, y una eficiencia cuántica interna del 30% se deriva de las medidas de fotoluminiscencia en nanocolumnas optimizadas. En la siguiente sección de este trabajo se presenta en detalle el mecanismo tras el crecimiento ordenado de nanocolumnas de InGaN/GaN emitiendo en el verde, y sus propiedades ópticas. Nanocolumnas de InGaN/GaN con secciones largas de InGaN (330-830 nm) se crecieron tanto en sustratos GaN/zafiro como GaN/Si(111). Se encuentra que la morfología y la distribución espacial del In dentro de las nanocolumnas dependen de las relaciones III/N e In/Ga locales en el frente de crecimiento de las nanocolumnas. La dispersión en el contenido de In entre diferentes nanocolumnas dentro de la misma muestra es despreciable, como indica las casi identicas formas espectrales de la catodoluminiscencia de una sola nanocolumna y del conjunto de ellas. Para las nanocolumnas de InGaN/GaN crecidas sobre GaN/Si(111) y emitiendo en el rango espectral verde, la eficiencia cuántica interna aumenta hasta el 30% al disminuir la temperatura de crecimiento y aumentar el nitrógeno activo. Este comportamiento se debe probablemente a la formación de estados altamente localizados, como indica la particular evolución de la energía de fotoluminiscencia con la temperatura (ausencia de “s-shape”) en muestras con una alta eficiencia cuántica interna. Por otro lado, no se ha encontrado la misma dependencia entre condiciones de crecimiento y efiencia cuántica interna en las nanoestructuras InGaN/GaN crecidas en GaN/zafiro, donde la máxima eficiencia encontrada ha sido de 3.7%. Como alternativa a las nanoestructuras axiales de InGaN/GaN, la sección 4 presenta resultados sobre el crecimiento y caracterización de estructuras core-shell de InGaN/GaN, re-crecidas sobre arrays de micropilares de GaN fabricados por ataque de un template GaN/zafiro (aproximación top-down). El crecimiento de InGaN/GaN es conformal, con componentes axiales y radiales en el crecimiento, que dan lugar a la estructuras core-shell con claras facetas hexagonales. El crecimiento radial (shell) se ve confirmado por medidas de catodoluminiscencia con resolución espacial efectuadas en un microscopio electrónico de barrido, asi como por medidas de microscopía de transmisión de electrones. Más adelante, el crecimiento de micro-pilares core-shell de InGaN se realizó en pilares GaN (cores) crecidos selectivamente por epitaxia de metal-orgánicos en fase vapor. Con el crecimiento de InGaN se forman estructuras core-shell con emisión alrededor de 3 eV. Medidas de catodoluminiscencia resuelta espacialmente indican un aumento en el contenido de indio del shell en dirección a la parte superior del pilar, que se manifiesta en un desplazamiento de la emisión de 3.2 eV en la parte inferior, a 3.0 eV en la parte superior del shell. Este desplazamiento está relacionado con variaciones locales de la razón III/V en las facetas laterales. Finalmente, se demuestra la fabricación de una estructura pin basada en estos pilares core-shell. Medidas de electroluminiscencia resuelta espacialmente, realizadas en pilares individuales, confirman que la electroluminiscencia proveniente del shell de InGaN (diodo lateral) está alrededor de 3.0 eV, mientras que la emisión desde la parte superior del pilar (diodo axial) está alrededor de 2.3 eV. Para finalizar, se presentan resultados sobre el crecimiento ordenado de GaN, con y sin inserciones de InGaN, en templates semi polares (GaN(11-22)/zafiro) y no polares (GaN(11-20)/zafiro). Tras el crecimiento ordenado, gran parte de los defectos presentes en los templates originales se ven reducidos, manifestándose en una gran mejora de las propiedades ópticas. En el caso de crecimiento selectivo sobre templates con orientación GaN(11-22), no polar, la formación de nanoestructuras con una particular morfología (baja relación entre crecimiento perpedicular frente a paralelo al plano) permite, a partir de la coalescencia de estas nanoestructuras, la fabricación de pseudo-templates no polares de GaN de alta calidad. ABSTRACT The aim of this work is to gain insight into the selective area growth of InGaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. Several nanocolumn-based approaches such as standard axial InGaN/GaN structures, InGaN/GaN core-shell structures, or InGaN/GaN nanostructures grown on semi- and non-polar substrates are discussed. The first section reviews the basics of the self-assembled growth of GaN nanocolumns on Si(111). Morphology differences and optical properties are compared to those of GaN layer grown directly on Si(111). The effects of the growth temperature on the In incorporation in self-assembled InGaN nanocolumns grown on Si(111) is described. The second section reviews the basic growth mechanisms of selectively grown GaNbased nanostructures on c-plane GaN/sapphire templates. By increasing the local III/V ratio morphological changes from pyramidal islands, to GaN nanocolumns with top semi-polar planes, and further to GaN nanocolumns with top polar c-planes are observed. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semipolar and polar nature of the crystal planes involved. The third section reports on the effect of the growth temperature and In/Ga ratio on the morphology and light emission characteristics of ordered InGaN nanocolumns grown on c-plane GaN/sapphire templates. Within the growth temperature range of 650 to 750oC the In incorporation can be modified either by the growth temperature, or the In/Ga ratio. Control of these factors allows the optimization of the InGaN nanocolumns light emission wavelength. In order to achieve white light emission two approaches are used. First yellow-white light emission can be obtained at room temperature from nanostructures where the InGaN region is composition-graded by using temperature gradients during growth. In a second approach the stacking of red, green and blue emitting segments was used to achieve the monolithic integration of these structures in one single InGaN nanocolumn leading to ordered broad spectrum emitters. With this approach, the spectral shape can be controlled by changing the thickness of the respective InGaN segments. Furthermore the growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN layers (planar) of similar composition and thickness. Electroluminescence spectra show a very small blue shift with increasing current, (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells. Next the selective area growth of In(Ga)N/GaN nanocolumns on Si(111) substrates is discussed. Ordered In(Ga)N/GaN nanocolumns emitting from ultraviolet (3.2 eV) to infrared (0.78 eV) were then grown on top of GaN-buffered Si substrates. The morphology and the emission efficiency of the In(Ga)N/GaN nanocolumns emitting in the green could be substantially improved by tuning the In/Ga and total III/N ratios, where an estimated internal quantum efficiency of 30 % was derived from photoluminescence data. In the next section, this work presents a study on the selective area growth mechanisms of green-emitting InGaN/GaN nanocolumns and their optical properties. InGaN/GaN nanocolumns with long InGaN sections (330-830nm) were grown on GaN/sapphire and GaN-buffered Si(111). The nanocolumn’s morphology and spatial indium distribution is found to depend on the local group (III)/N and In/Ga ratios at the nanocolumn’s top. A negligible spread of the average indium incorporation among different nanostructures is found as indicated by similar shapes of the cathodoluminescence spectra taken from single nanocolumns and ensembles of nanocolumns. For InGaN/GaN nanocolumns grown on GaN-buffered Si(111), all emitting in the green spectral range, the internal quantum efficiency increases up to 30% when decreasing growth temperature and increasing active nitrogen. This behavior is likely due to the formation of highly localized states, as indicated by the absence of a complete s-shape behavior of the PL peak position with temperature (up to room temperature) in samples with high internal quantum efficiency. On the other hand, no dependence of the internal quantum efficiency on the growth conditions is found for InGaN/GaN nanostructures grown on GaN/sapphire, where the maximum achieved efficiency is 3.7%. As alternative to axial InGaN/GaN nanostructures, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods etched from a GaN/sapphire template. Growth of InGaN/GaN is conformal, with axial and radial growth components leading to core-shell structures with clear hexagonal facets. The radial InGaN growth (shell) is confirmed by spatially resolved cathodoluminescence performed in a scanning electron microscopy as well as in scanning transmission electron microscopy. Furthermore the growth of InGaN core-shell micro pillars using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template is demonstrated. Upon InGaN overgrowth core-shell structures with emission at around 3.0 eV are formed. With spatially resolved cathodoluminescence, an increasing In content towards the pillar top is found to be present in the InGaN shell, as indicated by a shift of CL peak position from 3.2 eV at the shell bottom to 3.0 eV at the shell top. This shift is related to variations of the local III/V ratio at the side facets. Further, the successful fabrication of a core-shell pin diode structure is demonstrated. Spatially resolved electroluminescence measurements performed on individual micro LEDs, confirm emission from the InGaN shell (lateral diode) at around 3.0 eV, as well as from the pillar top facet (axial diode) at around 2.3 eV. Finally, this work reports on the selective area growth of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the GaN templates is strongly reduced as indicated by TEM and a dramatic improvement of the optical properties. In case of SAG on non-polar (11-22) templates the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of the nanostructures.

Cancelación activa del ruido utilizando el KIT TMS320C5515 EZDSP

El control, o cancelación activa de ruido, consiste en la atenuación del ruido presente en un entorno acústico mediante la emisión de una señal igual y en oposición de fase al ruido que se desea atenuar. La suma de ambas señales en el medio acústico produce una cancelación mutua, de forma que el nivel de ruido resultante es mucho menor al inicial. El funcionamiento de estos sistemas se basa en los principios de comportamiento de los fenómenos ondulatorios descubiertos por Augustin-Jean Fresnel, Christiaan Huygens y Thomas Young entre otros. Desde la década de 1930, se han desarrollado prototipos de sistemas de control activo de ruido, aunque estas primeras ideas eran irrealizables en la práctica o requerían de ajustes manuales cada poco tiempo que hacían inviable su uso. En la década de 1970, el investigador estadounidense Bernard Widrow desarrolla la teoría de procesado adaptativo de señales y el algoritmo de mínimos cuadrados LMS. De este modo, es posible implementar filtros digitales cuya respuesta se adapte de forma dinámica a las condiciones variables del entorno. Con la aparición de los procesadores digitales de señal en la década de 1980 y su evolución posterior, se abre la puerta para el desarrollo de sistemas de cancelación activa de ruido basados en procesado de señal digital adaptativo. Hoy en día, existen sistemas de control activo de ruido implementados en automóviles, aviones, auriculares o racks de equipamiento profesional. El control activo de ruido se basa en el algoritmo fxlms, una versión modificada del algoritmo LMS de filtrado adaptativo que permite compensar la respuesta acústica del entorno. De este modo, se puede filtrar una señal de referencia de ruido de forma dinámica para emitir la señal adecuada que produzca la cancelación. Como el espacio de cancelación acústica está limitado a unas dimensiones de la décima parte de la longitud de onda, sólo es viable la reducción de ruido en baja frecuencia. Generalmente se acepta que el límite está en torno a 500 Hz. En frecuencias medias y altas deben emplearse métodos pasivos de acondicionamiento y aislamiento, que ofrecen muy buenos resultados. Este proyecto tiene como objetivo el desarrollo de un sistema de cancelación activa de ruidos de carácter periódico, empleando para ello electrónica de consumo y un kit de desarrollo DSP basado en un procesador de muy bajo coste. Se han desarrollado una serie de módulos de código para el DSP escritos en lenguaje C, que realizan el procesado de señal adecuado a la referencia de ruido. Esta señal procesada, una vez emitida, produce la cancelación acústica. Empleando el código implementado, se han realizado pruebas que generan la señal de ruido que se desea eliminar dentro del propio DSP. Esta señal se emite mediante un altavoz que simula la fuente de ruido a cancelar, y mediante otro altavoz se emite una versión filtrada de la misma empleando el algoritmo fxlms. Se han realizado pruebas con distintas versiones del algoritmo, y se han obtenido atenuaciones de entre 20 y 35 dB medidas en márgenes de frecuencia estrechos alrededor de la frecuencia del generador, y de entre 8 y 15 dB medidas en banda ancha. ABSTRACT. Active noise control consists on attenuating the noise in an acoustic environment by emitting a signal equal but phase opposed to the undesired noise. The sum of both signals results in mutual cancellation, so that the residual noise is much lower than the original. The operation of these systems is based on the behavior principles of wave phenomena discovered by Augustin-Jean Fresnel, Christiaan Huygens and Thomas Young. Since the 1930’s, active noise control system prototypes have been developed, though these first ideas were practically unrealizable or required manual adjustments very often, therefore they were unusable. In the 1970’s, American researcher Bernard Widrow develops the adaptive signal processing theory and the Least Mean Squares algorithm (LMS). Thereby, implementing digital filters whose response adapts dynamically to the variable environment conditions, becomes possible. With the emergence of digital signal processors in the 1980’s and their later evolution, active noise cancellation systems based on adaptive signal processing are attained. Nowadays active noise control systems have been successfully implemented on automobiles, planes, headphones or racks for professional equipment. Active noise control is based on the fxlms algorithm, which is actually a modified version of the LMS adaptive filtering algorithm that allows compensation for the acoustic response of the environment. Therefore it is possible to dynamically filter a noise reference signal to obtain the appropriate cancelling signal. As the noise cancellation space is limited to approximately one tenth of the wavelength, noise attenuation is only viable for low frequencies. It is commonly accepted the limit of 500 Hz. For mid and high frequencies, conditioning and isolating passive techniques must be used, as they produce very good results. The objective of this project is to develop a noise cancellation system for periodic noise, by using consumer electronics and a DSP development kit based on a very-low-cost processor. Several C coded modules have been developed for the DSP, implementing the appropriate signal processing to the noise reference. This processed signal, once emitted, results in noise cancellation. The developed code has been tested by generating the undesired noise signal in the DSP. This signal is emitted through a speaker simulating the noise source to be removed, and another speaker emits an fxlms filtered version of the same signal. Several versions of the algorithm have been tested, obtaining attenuation levels around 20 – 35 dB measured in a tight bandwidth around the generator frequency, or around 8 – 15 dB measured in broadband.

Design of broadband transmitarray unit cells with comparative study of different numbers of layers

A generalized methodology to design low-profile transmitarray (TA) antennas made of several stacked layers with nonresonant printed phasing elements is presented. A study of the unit cell bandwidth, phase-shift range and tolerances has been conducted considering different numbers of layers. A structure with three metalized layers with capacitive and inductive elements enabling a phase range of nearly 360° and low insertion loss is introduced. A study of the four-layer structure shows improvement in the performance of the unit cells in terms of bandwidth from 2% to more than 20% and a complete phase coverage. Implementations on a flexible substrate of TAs with progressive phase shift operating at 19 GHz are used for validation.