23 resultados para Thermal characterization

em Universidad Politécnica de Madrid


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Present research is framed within the project MODIFICA (MODelo predictivo - edIFIcios - Isla de Calor Urbana) aimed at developing a predictive model for dwelling energy performance under the urban heat island effect in order to implement it in the evaluation of real energy demand and consumption of dwellings as well as in the selection of energy retrofitting strategies. It is funded by Programa de I+D+i orientada a los retos de la sociedad 'Retos Investigación' 2013. The scope of our predictive model is defined by the heat island effect (UHI) of urban structures that compose the city of Madrid. In particular, we focus on the homogeneous areas for urban structures with the same urban and building characteristics. Data sources for the definition of such homogeneous areas were provided by previous research on the UHI of Madrid. The objective is to establish a critical analysis of climate records used for energy simulation tools, which data come from weather stations placed in decontextualized areas from the usual urban reality, where the thermal conditions differs by up to 6ºC. In this way, we intend to develop a new predictive model for the consumption and demand in buildings depending on their location, the urban structure and the associated UHI, improving the future energy rehabilitation interventions

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Thermal characterization of Concentrating Photovoltaics (CPV) modules and Arrays is needed to determine their performance and modelling of energy forecast. Module-ambient thermal resistance is easily obtained from its definition but the cell-module thermal resistant needs to be estimated from indirect procedures, two of them are presented in this paper. In addition, an equivalent parameter is defined, the Concentrator Nominal Operating Module/Cell Temperature (CNOMT/CNOCT), the temperature at Concentrator Standard Operating Conditions (CSOC). Definitions and expression to relate (CNOMT/CNOCT) to thermal resistances are presented, plus several examples of estimations from real operating arrays.

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A complete characterisation of PV modules for building integration is needed in order to know their influence on the building’s global energy balance. Specifically, certain characteristic parameters should be obtained for each different PV module suitable for building integrated photovoltaics (BIPV), some by direct or indirect measurements at the laboratory, and others by monitoring the element performance mounted in real operating conditions. In the case of transparent building envelopes it is particularly important to perform an optical and thermal characterization of the PV modules that would be integrated in them. This paper addresses the optical characterization of some commercial thin-film PV modules having different degrees of transparency, suitable for building integration in façades. The approach is based on the measurement of the spectral UV/Vis/NIR reflectance and transmittance of the different considered samples, both at normal incidence and as a function of the angle of incidence. With the obtained results, the total and zoned UV, visible and NIR transmission and reflection values are calculated, enabling the correct characterization of the PV modules integrated in façades and the subsequent evaluation of their impact over the electrical, thermal and lighting performance in a building.

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Implants that can be metabolized by the human body have appeared as one of the most attractive and promising solutions to overcome limitations and improve the features of current implantable devices. Biodegradable polymers and magnesium (Mg) alloys have played an important role writing the history of resorbable implants [1,2]. This paper presents the processing by extrusion/compression moulding, mechanical characterization, thermal characterization and in vitro biocompatibility of a novel generation of resorbable materials based on a polymeric matrix reinforced with metallic Mg particles.

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La principal motivación para la elección del tema de la tesis es nuestra realidad energética y ambiental. Y más específicamente, la necesidad urgente de dar una respuesta a esta realidad desde el sector de la edificación. Por lo que, el trabajo parte de la búsqueda de soluciones pasivas que ayuden a la reducción del consumo energético y de las emisiones de C02 de los edificios, tanto nuevos como existentes. El objeto de estudio son aplicaciones innovadoras, basadas en el uso de materiales reactivos, con un efecto térmico de memoria bidireccional. La energía es un elemento imprescindible para el desarrollo. Sin embargo, el modelo energético predominante, basado principalmente en la utilización de combustibles de origen fósil, es uno de los importantes responsables del deterioro ambiental que sufre el planeta. Además, sus reservas son limitadas y están concentradas en unas pocas regiones del mundo, lo que genera problemas de dependencia, competitividad y de seguridad de suministro. Dado el gran potencial de ahorro energético del sector de la edificación, la Unión Europea en sus directivas enfatiza la necesidad de mejorar la eficiencia energética de los edificios. Añadiendo, además, la obligatoriedad de desarrollar edificios “energía casi nula”, cuyo prerrequisito es tener un muy alto rendimiento energético. En España, los edificios son responsables del 31% del consumo de energía primaria. La mayor parte de este consumo se relaciona a la utilización de sistemas activos de acondicionamiento. Una medida efectiva para reducir la demanda es mejorar la envolvente. Sin embargo, hay que buscar estrategias adicionales para aumentar aún más la eficiencia de los edificios nuevos y existentes. Para los climas de España, el uso de la inercia térmica ha probado ser una estrategia válida. Sin embargo, su funcionamiento está vinculado al peso y al volumen de los materiales utilizados. Esto limita sus posibilidades en la rehabilitación energética y en los nuevos edificios basados en la construcción ligera. Una alternativa es el uso de aplicaciones de almacenamiento térmico por calor latente, utilizando materiales de cambio de fase (PCM). Los PCM son sustancias con un muy alto calor de fusión, capaces de almacenar una gran cantidad de energía térmica sin requerir aumentos significativos de peso o volumen. Estas características los hacen idóneos para reducir el consumo relacionado con el acondicionamiento térmico, en edificios nuevos y existentes. En la parte preliminar de la investigación, se encontró que para lograr un aprovechamiento óptimo de las aplicaciones con PCM es necesario tener un conocimiento profundo de su funcionamiento y de las variables del sistema. De ahí que el objetivo principal de la presente tesis sea: establecer las bases para la optimizatión integral de las aplicaciones con almacenamiento de energía térmica por calor latente, identificando y validando sus variables más relevantes. La investigación consta de tres partes. La primera, documental, sistematizando y jerarquizando la información científica publicada; la segunda, numérica, basada en un análisis paramétrico de una aplicación con PCM, utilizando simulaciones térmicas; y la tercera, experimental, monitorizando el funcionamiento térmico y energético de diferentes aplicaciones con PCM en módulos a escala real. Los resultados brindan un más profundo entendimiento del funcionamiento de las aplicaciones evaluadas. Han permitido identificar sus variables relevantes, cuantificar su influencia, y determinar condiciones óptimas para su utilización así como situaciones en las que sería muy difícil justificar su uso. En el proceso, se realizó la caracterización térmica y energética de aplicaciones con PCM, tanto opacas como traslúcidas. Además, se ha encontrado que las aplicaciones con PCM son capaces de aumentar la eficiencia energética inclusive en recintos con diseños optimizados, demostrando ser una de las estrategias adecuadas para lograr el muy alto desempeño energético requerido en los edificios energía nula. ABSTRACT The main motivation for choosing the theme of the thesis is our energy and environmental reality. And more specifically, the urgent need to respond to this reality from the building sector. This is why, the work start with the search of passive solutions that help reduce energy consumption and C02 emissions of buildings, in both new and existing ones. The object of study is innovative applications based on the use of responsive materials, with bidirectional thermal memory. Energy is an essential element for development. However, the predominant energy model, based primarily on the use of fossil fuels, is one of the major responsible for the environmental deterioration of the planet, the cause of most of the CO2 emissions. Furthermore, reserves of fossil fuels are limited and are concentrated in a few regions of the world, which creates issues related to dependency, competitiveness, and security of supply. Given the large potential for energy savings in the building sector, the European Union in its directives emphasizes the need to improve energy efficiency in buildings. Also, adding the obligation to develop "nearly zero energy" buildings, whose first prerequisite is to achieve a very high energy efficiency. In Spain, buildings are responsible for 31% of primary energy consumption and most of this consumption is related to the used of HVAC systems. One of the most effective measures to reduce demand is to improve the envelope. However, it is necessary to look for additional strategies to further increase the efficiency of new and existing buildings. For the predominant climates in Spain, use of the thermal inertia may be a valid strategy. Nevertheless, its operation is linked to weight and volume of the materials used. This limits their possibilities in the existing buildings energy retrofitting and in the new buildings based on lightweight construction. An alternative is the use of latent heat thermal energy storage applications (LHTES), using phase change materials (PCM). PCM are substances with a high heat of fusion, capable of storing a large amount of thermal energy without requiring significant increases in weight or volume. These features make them ideal for reducing energy consumption associated with thermal conditioning in both new and existing buildings. In the preliminary part of the investigation, it was found that to get optimum utilization of the PCM applications is needed to have a deep understanding of its operation and, in particular, how the system variables affect its performance. Hence, the main objective of this thesis is: to establish the basis for the integral optimization of applications with latent heat thermal energy storage, identifying and validating the most relevant variables. The research comprises of three parts. The first, documentary, systematizing and prioritizing published scientific information. The second, numeric, based on a parametric analysis of an application PCM using thermal simulations. The third, experimental, monitoring the thermal and energy performance of different applications with PCM on real scale test cells. The results provide a complete understanding of the functioning of the evaluated LHTES application. They have allowed to identify their relevant variables, quantify their influence and determine optimum conditions for use as well as situations where it would be very difficult to justify its use. In the process, it was carried out the power and thermal characterization of various opaque and translucent PCM applications. Furthermore, it has been found that applications with PCM can increase the energy efficiency, even in buildings with optimized designs; proving to be one of the appropriate measures to achieve the high energy performance required in zero energy buildings.

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Experimental characterization and implementation of an integrated autoregressive model to predict the thermal performance of vegetal façades

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Previously degradation studies carried out, over a number of different mortars by the research team, have shown that observed degradation does not exclusively depend on the solution equilibrium pH, nor the aggressive anions relative solubility. In our tests no reason was found that could allow us to explain, why same solubility anions with a lower pH are less aggressive than others. The aim of this paper is to study cement pastes behavior in aggressive environments. As observed in previous research, this cement pastes behaviors are not easily explained only taking into account only usual parameters, pH, solubility etc. Consequently the paper is about studying if solution physicochemical characteristics are more important in certain environments than specific pH values. The paper tries to obtain a degradation model, which starting from solution physicochemical parameters allows us to interpret the different behaviors shown by different composition cements. To that end, the rates of degradation of the solid phases were computed for each considered environment. Three cement have been studied: CEM I 42.5R/SR, CEM II/A-V 42.5R and CEM IV/B-(P-V) 32.5 N. The pastes have been exposed to five environments: sodium acetate/acetic acid 0.35 M, sodium sulfate solution 0.17 M, a solution representing natural water, saturated calcium hydroxide solution and laboratory environment. The attack mechanism was meant to be unidirectional, in order to achieve so; all sides of cylinders were sealed except from the attacked surface. The cylinders were taking out of the exposition environments after 2, 4, 7, 14, 30, 58 and 90 days. Both aggressive solution variations in solid phases and in different depths have been characterized. To each age and depth the calcium, magnesium and iron contents have been analyzed. Hydrated phases evolution studied, using thermal analysis, and crystalline compound changes, using X ray diffraction have been also analyzed. Sodium sulphate and water solutions stabilize an outer pH near to 8 in short time, however the stability of the most pH dependent phases is not the same. Although having similar pH and existing the possibility of forming a plaster layer near to the calcium leaching surface, this stability is greater than other sulphate solutions. Stability variations of solids formed by inverse diffusion, determine the rate of degradation.

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The analysis of the viability of Hydrogen production without CO2 emissions is one of the most challenging activities that have been initiated for a sustainable energy supply. As one of the tracks to fulfil such objective, direct methane cracking has been analysed experimentally to assess the scientific viability and reaction characterization in a broad temperature range, from 875 to 1700 ?C. The effect of temperature, sweeping/carrier gas fraction proposed in some concepts, methane flow rate, residence time, and tube material and porosity has been analysed. The aggregation of carbon black particles to the reaction tube is the main technological show-stopper that has been identified.

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Enhancement-mode (E-mode) high electron mobility transistors (HEMTs) based on a standard AlGaN/GaN heterostructure have been fabricated using two different methods: 19F implantation and fluorine-based plasma treatment. The need of a thermal annealing after both treatments has been proven in order to restore the ID and gm levels. DC characterization at high temperature has demonstrated that ID and gm decrease reversibly due to the reduction of the electron mobility and the drift velocity. Pulsed measurements (state period and variable pulse width) have been performed to study the self-heating effects.

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AlGaN/GaN high electron mobility transistors (HEMT) are key devices for the next generation of high-power, high-frequency and high-temperature electronics applications. Although significant progress has been recently achieved [1], stability and reliability are still some of the main issues under investigation, particularly at high temperatures [2-3]. Taking into account that the gate contact metallization is one of the weakest points in AlGaN/GaN HEMTs, the reliability of Ni, Mo, Pt and refractory metal gates is crucial [4-6]. This work has been focused on the thermal stress and reliability assessment of AlGaN/GaN HEMTs. After an unbiased storage at 350 o C for 2000 hours, devices with Ni/Au gates exhibited detrimental IDS-VDS degradation in pulsed mode. In contrast, devices with Mo/Au gates showed no degradation after similar storage conditions. Further capacitance-voltage characterization as a function of temperature and frequency revealed two distinct trap-related effects in both kinds of devices. At low frequency (< 1MHz), increased capacitance near the threshold voltage was present at high temperatures and more pronounced for the Ni/Au gate HEMT and as the frequency is lower. Such an anomalous “bump” has been previously related to H-related surface polar charges [7]. This anomalous behavior in the C-V characteristics was also observed in Mo/Au gate HEMTs after 1000 h at a calculated channel temperatures of around from 250 o C (T2) up to 320 ºC (T4), under a DC bias (VDS= 25 V, IDS= 420 mA/mm) (DC-life test). The devices showed a higher “bump” as the channel temperature is higher (Fig. 1). At 1 MHz, the higher C-V curve slope of the Ni/Au gated HEMTs indicated higher trap density than Mo/Au metallization (Fig. 2). These results highlight that temperature is an acceleration factor in the device degradation, in good agreement with [3]. Interface state density analysis is being performed in order to estimate the trap density and activation energy.

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La temperatura es una preocupación que juega un papel protagonista en el diseño de circuitos integrados modernos. El importante aumento de las densidades de potencia que conllevan las últimas generaciones tecnológicas ha producido la aparición de gradientes térmicos y puntos calientes durante el funcionamiento normal de los chips. La temperatura tiene un impacto negativo en varios parámetros del circuito integrado como el retardo de las puertas, los gastos de disipación de calor, la fiabilidad, el consumo de energía, etc. Con el fin de luchar contra estos efectos nocivos, la técnicas de gestión dinámica de la temperatura (DTM) adaptan el comportamiento del chip en función en la información que proporciona un sistema de monitorización que mide en tiempo de ejecución la información térmica de la superficie del dado. El campo de la monitorización de la temperatura en el chip ha llamado la atención de la comunidad científica en los últimos años y es el objeto de estudio de esta tesis. Esta tesis aborda la temática de control de la temperatura en el chip desde diferentes perspectivas y niveles, ofreciendo soluciones a algunos de los temas más importantes. Los niveles físico y circuital se cubren con el diseño y la caracterización de dos nuevos sensores de temperatura especialmente diseñados para los propósitos de las técnicas DTM. El primer sensor está basado en un mecanismo que obtiene un pulso de anchura variable dependiente de la relación de las corrientes de fuga con la temperatura. De manera resumida, se carga un nodo del circuito y posteriormente se deja flotando de tal manera que se descarga a través de las corrientes de fugas de un transistor; el tiempo de descarga del nodo es la anchura del pulso. Dado que la anchura del pulso muestra una dependencia exponencial con la temperatura, la conversión a una palabra digital se realiza por medio de un contador logarítmico que realiza tanto la conversión tiempo a digital como la linealización de la salida. La estructura resultante de esta combinación de elementos se implementa en una tecnología de 0,35 _m. El sensor ocupa un área muy reducida, 10.250 nm2, y consume muy poca energía, 1.05-65.5nW a 5 muestras/s, estas cifras superaron todos los trabajos previos en el momento en que se publicó por primera vez y en el momento de la publicación de esta tesis, superan a todas las implementaciones anteriores fabricadas en el mismo nodo tecnológico. En cuanto a la precisión, el sensor ofrece una buena linealidad, incluso sin calibrar; se obtiene un error 3_ de 1,97oC, adecuado para tratar con las aplicaciones de DTM. Como se ha explicado, el sensor es completamente compatible con los procesos de fabricación CMOS, este hecho, junto con sus valores reducidos de área y consumo, lo hacen especialmente adecuado para la integración en un sistema de monitorización de DTM con un conjunto de monitores empotrados distribuidos a través del chip. Las crecientes incertidumbres de proceso asociadas a los últimos nodos tecnológicos comprometen las características de linealidad de nuestra primera propuesta de sensor. Con el objetivo de superar estos problemas, proponemos una nueva técnica para obtener la temperatura. La nueva técnica también está basada en las dependencias térmicas de las corrientes de fuga que se utilizan para descargar un nodo flotante. La novedad es que ahora la medida viene dada por el cociente de dos medidas diferentes, en una de las cuales se altera una característica del transistor de descarga |la tensión de puerta. Este cociente resulta ser muy robusto frente a variaciones de proceso y, además, la linealidad obtenida cumple ampliamente los requisitos impuestos por las políticas DTM |error 3_ de 1,17oC considerando variaciones del proceso y calibrando en dos puntos. La implementación de la parte sensora de esta nueva técnica implica varias consideraciones de diseño, tales como la generación de una referencia de tensión independiente de variaciones de proceso, que se analizan en profundidad en la tesis. Para la conversión tiempo-a-digital, se emplea la misma estructura de digitalización que en el primer sensor. Para la implementación física de la parte de digitalización, se ha construido una biblioteca de células estándar completamente nueva orientada a la reducción de área y consumo. El sensor resultante de la unión de todos los bloques se caracteriza por una energía por muestra ultra baja (48-640 pJ) y un área diminuta de 0,0016 mm2, esta cifra mejora todos los trabajos previos. Para probar esta afirmación, se realiza una comparación exhaustiva con más de 40 propuestas de sensores en la literatura científica. Subiendo el nivel de abstracción al sistema, la tercera contribución se centra en el modelado de un sistema de monitorización que consiste de un conjunto de sensores distribuidos por la superficie del chip. Todos los trabajos anteriores de la literatura tienen como objetivo maximizar la precisión del sistema con el mínimo número de monitores. Como novedad, en nuestra propuesta se introducen nuevos parámetros de calidad aparte del número de sensores, también se considera el consumo de energía, la frecuencia de muestreo, los costes de interconexión y la posibilidad de elegir diferentes tipos de monitores. El modelo se introduce en un algoritmo de recocido simulado que recibe la información térmica de un sistema, sus propiedades físicas, limitaciones de área, potencia e interconexión y una colección de tipos de monitor; el algoritmo proporciona el tipo seleccionado de monitor, el número de monitores, su posición y la velocidad de muestreo _optima. Para probar la validez del algoritmo, se presentan varios casos de estudio para el procesador Alpha 21364 considerando distintas restricciones. En comparación con otros trabajos previos en la literatura, el modelo que aquí se presenta es el más completo. Finalmente, la última contribución se dirige al nivel de red, partiendo de un conjunto de monitores de temperatura de posiciones conocidas, nos concentramos en resolver el problema de la conexión de los sensores de una forma eficiente en área y consumo. Nuestra primera propuesta en este campo es la introducción de un nuevo nivel en la jerarquía de interconexión, el nivel de trillado (o threshing en inglés), entre los monitores y los buses tradicionales de periféricos. En este nuevo nivel se aplica selectividad de datos para reducir la cantidad de información que se envía al controlador central. La idea detrás de este nuevo nivel es que en este tipo de redes la mayoría de los datos es inútil, porque desde el punto de vista del controlador sólo una pequeña cantidad de datos |normalmente sólo los valores extremos| es de interés. Para cubrir el nuevo nivel, proponemos una red de monitorización mono-conexión que se basa en un esquema de señalización en el dominio de tiempo. Este esquema reduce significativamente tanto la actividad de conmutación sobre la conexión como el consumo de energía de la red. Otra ventaja de este esquema es que los datos de los monitores llegan directamente ordenados al controlador. Si este tipo de señalización se aplica a sensores que realizan conversión tiempo-a-digital, se puede obtener compartición de recursos de digitalización tanto en tiempo como en espacio, lo que supone un importante ahorro de área y consumo. Finalmente, se presentan dos prototipos de sistemas de monitorización completos que de manera significativa superan la características de trabajos anteriores en términos de área y, especialmente, consumo de energía. Abstract Temperature is a first class design concern in modern integrated circuits. The important increase in power densities associated to recent technology evolutions has lead to the apparition of thermal gradients and hot spots during run time operation. Temperature impacts several circuit parameters such as speed, cooling budgets, reliability, power consumption, etc. In order to fight against these negative effects, dynamic thermal management (DTM) techniques adapt the behavior of the chip relying on the information of a monitoring system that provides run-time thermal information of the die surface. The field of on-chip temperature monitoring has drawn the attention of the scientific community in the recent years and is the object of study of this thesis. This thesis approaches the matter of on-chip temperature monitoring from different perspectives and levels, providing solutions to some of the most important issues. The physical and circuital levels are covered with the design and characterization of two novel temperature sensors specially tailored for DTM purposes. The first sensor is based upon a mechanism that obtains a pulse with a varying width based on the variations of the leakage currents on the temperature. In a nutshell, a circuit node is charged and subsequently left floating so that it discharges away through the subthreshold currents of a transistor; the time the node takes to discharge is the width of the pulse. Since the width of the pulse displays an exponential dependence on the temperature, the conversion into a digital word is realized by means of a logarithmic counter that performs both the timeto- digital conversion and the linearization of the output. The structure resulting from this combination of elements is implemented in a 0.35_m technology and is characterized by very reduced area, 10250 nm2, and power consumption, 1.05-65.5 nW at 5 samples/s, these figures outperformed all previous works by the time it was first published and still, by the time of the publication of this thesis, they outnumber all previous implementations in the same technology node. Concerning the accuracy, the sensor exhibits good linearity, even without calibration it displays a 3_ error of 1.97oC, appropriate to deal with DTM applications. As explained, the sensor is completely compatible with standard CMOS processes, this fact, along with its tiny area and power overhead, makes it specially suitable for the integration in a DTM monitoring system with a collection of on-chip monitors distributed across the chip. The exacerbated process fluctuations carried along with recent technology nodes jeop-ardize the linearity characteristics of the first sensor. In order to overcome these problems, a new temperature inferring technique is proposed. In this case, we also rely on the thermal dependencies of leakage currents that are used to discharge a floating node, but now, the result comes from the ratio of two different measures, in one of which we alter a characteristic of the discharging transistor |the gate voltage. This ratio proves to be very robust against process variations and displays a more than suficient linearity on the temperature |1.17oC 3_ error considering process variations and performing two-point calibration. The implementation of the sensing part based on this new technique implies several issues, such as the generation of process variations independent voltage reference, that are analyzed in depth in the thesis. In order to perform the time-to-digital conversion, we employ the same digitization structure the former sensor used. A completely new standard cell library targeting low area and power overhead is built from scratch to implement the digitization part. Putting all the pieces together, we achieve a complete sensor system that is characterized by ultra low energy per conversion of 48-640pJ and area of 0.0016mm2, this figure outperforms all previous works. To prove this statement, we perform a thorough comparison with over 40 works from the scientific literature. Moving up to the system level, the third contribution is centered on the modeling of a monitoring system consisting of set of thermal sensors distributed across the chip. All previous works from the literature target maximizing the accuracy of the system with the minimum number of monitors. In contrast, we introduce new metrics of quality apart form just the number of sensors; we consider the power consumption, the sampling frequency, the possibility to consider different types of monitors and the interconnection costs. The model is introduced in a simulated annealing algorithm that receives the thermal information of a system, its physical properties, area, power and interconnection constraints and a collection of monitor types; the algorithm yields the selected type of monitor, the number of monitors, their position and the optimum sampling rate. We test the algorithm with the Alpha 21364 processor under several constraint configurations to prove its validity. When compared to other previous works in the literature, the modeling presented here is the most complete. Finally, the last contribution targets the networking level, given an allocated set of temperature monitors, we focused on solving the problem of connecting them in an efficient way from the area and power perspectives. Our first proposal in this area is the introduction of a new interconnection hierarchy level, the threshing level, in between the monitors and the traditional peripheral buses that applies data selectivity to reduce the amount of information that is sent to the central controller. The idea behind this new level is that in this kind of networks most data are useless because from the controller viewpoint just a small amount of data |normally extreme values| is of interest. To cover the new interconnection level, we propose a single-wire monitoring network based on a time-domain signaling scheme that significantly reduces both the switching activity over the wire and the power consumption of the network. This scheme codes the information in the time domain and allows a straightforward obtention of an ordered list of values from the maximum to the minimum. If the scheme is applied to monitors that employ TDC, digitization resource sharing is achieved, producing an important saving in area and power consumption. Two prototypes of complete monitoring systems are presented, they significantly overcome previous works in terms of area and, specially, power consumption.

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The possibility of using more economical silicon feedstock, i.e. as support for epitaxial solar cells, is of interest when the cost reduction and the properties are attractive. We have investigated the mechanical behaviour of two blocks of upgraded metallurgical silicon, which is known to present high content of impurities even after being purified by the directional solidification process. These impurities are mainly metals like Al and silicon compounds. Thus, it is important to characterize their effect in order to improve cell performance and to ensure the survival of the wafers throughout the solar value chain. Microstructure and mechanical properties were studied by means of ring on ring and three point bending tests. Additionally, elastic modulus and fracture toughness were measured. These results showed that it is possible to obtain marked improvements in toughness when impurities act as microscopic internal crack arrestors. However, the same impurities can be initiators of damage due to residual thermal stresses introduced during the crystallization process.

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The possibility of using more economical silicon feedstock, i.e. as support for epitaxial solar cells, is of interest when the cost reduction and the properties are attractive. We have investigated the mechanical behavior of two blocks of upgraded metallurgical silicon, which is known to present high content of impurities even after being purified by the directional solidification process. The impurities are mainly metals like Al and silicon compounds. Thus, it is important to characterize their effect in order to improve cell performance and to ensure the survival of the wafers throughout the solar value chain. Microstructure and mechanical properties were studied by means of ring on ring and three point bending tests. Additionally, Young’s modulus, hardness and fracture toughness were measured. These results showed that it is possible to obtain marked improvements in toughness when impurities act as microscopic internal crack arrestors. However, the same impurities can be initiators of damage due to residual thermal stresses introduced during the crystallization process.

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In coffee processing the fermentation stage is considered one of the critical operations by its impact on the final quality of the product. However, the level of control of the fermentation process on each farm is often not adequate; the use of sensorics for controlling coffee fermentation is not common. The objective of this work is to characterize the fermentation temperature in a fermentation tank by applying spatial interpolation and a new methodology of data analysis based on phase space diagrams of temperature data, collected by means of multi-distributed, low cost and autonomous wireless sensors. A real coffee fermentation was supervised in the Cauca region (Colombia) with a network of 24 semi-passive TurboTag RFID temperature loggers with vacuum plastic cover, submerged directly in the fermenting mass. Temporal evolution and spatial distribution of temperature is described in terms of the phase diagram areas which characterizes the cyclic behaviour of temperature and highlights the significant heterogeneity of thermal conditions at different locations in the tank where the average temperature of the fermentation was 21.2 °C, although there were temperature ranges of 4.6°C, and average spatial standard deviation of ±1.21ºC. In the upper part of the tank we found high heterogeneity of temperatures, the higher temperatures and therefore the higher fermentation rates. While at the bottom, it has been computed an area in the phase diagram practically half of the area occupied by the sensors of the upper tank, therefore this location showed higher temperature homogeneity

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The general purpose of this study was the determination of the safety conditions to avoid the presence of explosive atmospheres in the wastewater industry. Eight Spanish plants located in Madrid, Barcelona and Málaga were considered and several sludge samples were taken in different seasons. The base for the assessment of the spontaneous ignition behaviour of dust accumulations is the experimental determination of the self-ignition temperature under isothermal conditions. Self-ignition temperatures at four volumes were obtained for one sample of sewage sludge, allowing their extrapolation to large storage facilities. A simple test method, based also on an isothermal study of samples, is the UN classification of substances liable to spontaneous combustion. Two different samples were so tested, obtaining unlike results if transported in packages of different volumes. By means of thermogravimetric techniques it is possible to analyse the thermal susceptibility of dried sewage sludge. Apparent activation energy can be obtained from the rate of weight loss. It is also applied to the study of self-ignition susceptibility by modifying test conditions when oxygen stream is introduced. As a consequence of this oxidant contribution, sample behaviour can be very different during testing and a step drop or sudden loss of weight is observed at a characteristic temperature for every substance, associated to a rapid combustion. Plotting both the activation energy and the characteristic temperature, a map of self-ignition risk was obtained for 10 samples, showing different risk levels for samples taken in different locations and at different seasons. A prediction of the self-ignition risk level can be also determined.