Aprendizaje por contagio. Case of study: campus cde tecnificación proyectual 100x10

Se presenta al congreso de innovación el análisis crítico de la experiencia registrada en directo en el mes de julio en el primer campus de tecnificación de 240 horas en el centro de alto rendimiento 100x10 creado ex profeso para este acontecimiento en el que un colectivo diverso de docentes, alumnos, profesionales, artistas y otros implicados potenciarán 100 habilidades básicas de los discentes a partir de los talentos y rarezas naturales individuales mediante estrategias de extrañamiento desarrolladas en un entorno natural susceptible de ser lugarizado

Desarrollo de una aplicación informática para el cálculo de indicadores ambientales (huella de carbono) en actividades agrícolas a partir de los Cuadernos Digitales de Explotación (CDE)

Este proyecto pretende resolver una necesidad del promotor, CROPTI, cuyos requisitos básicos son el diseño de un algoritmo que sea capaz de calcular automáticamente la huella de carbono de un cultivo teniendo en cuenta las operaciones agrícolas llevadas a cabo para producirlo, y la creación de una herramienta software que no entorpezca el resto de servicios que ofrece la empresa, con la finalidad de aumentar el valor añadido de sus servicios. Para ello se ha elaborado un procedimiento lógico que consta de dos pasos, en primer lugar se realiza un pre-análisis de los datos brutos, proporcionados por la herramienta informática, para filtrarlos y depurarlos con el fin de utilizar datos consistentes. Seguidamente se han implementado las rutinas software que calculan la huella de carbono producida por el cultivo objetivo, en el caso de este proyecto ha sido la cebada (Hordeum vulgare L.). Desglosando el impacto generado por cada insumo utilizado (gasóleo, fertilizante o productos fitosanitarios) en cada etapa del ciclo de vida. Se ha estimado que la inversión total del proyecto, que deberá desembolsar el promotor durante el primer año es de 29.405,33 €, habiéndose cuantificado como criterios de evaluación financiera: la Valor Actual Neto (VAN), la Tasa Interna de Rendimiento (TIR), la relación Beneficio/Inversión (Q) y el plazo de recuperación (Pay back), en todos los casos satisfactorios.

Low-injection behaviour of a solar cell with a metallic grating back-reflector

Recent studies have dealt with the possibility of increasing light absorption by using the so-called electric field enhancement taking place within the grooves of metallic gratings. In order to evaluate the potential improvements derived from the absorption increase, we employ a simplified model to analyze the low-injection behaviour of a solar cell with a metallic grating back-reflector.

Triple-Junction Solar Cells for Ultra-High Concentrator Applications

After the successful implementation of a record performing dual-junction solar cell at ultra high concentration, in this paper we present the transition to a triple-junction device. The semiconductor structure of the solar cells is presented and the main changes in respect to a dual-junction design are briefly discussed. Cross-sectional TEM analysis of samples confirms that the quality of the triple-junction structures grown by MOVPE is good, revealing no trace of antiphase disorder, and showing flat, sharp and clear interfaces between the layers. Triple-junction solar cells manufactured on these structures have shown a peak efficiency of 36.2% at 700X, maintaining the efficiency over 35% from 300 to 1200 suns. With some changes in the structure and a fine tuning of its processing, efficiencies close to 40% at 1000 suns are envisaged.

Sputter optimization of AlN on diamond substrates for high frequency SAW resonators

The AlN/diamond structure is an attractive combination for SAW devices and its application at high frequencies. In this work, the synthesis of AlN thin films by reactive sputtering has been optimized on diamond substrates in order to process high frequency devices. Polished microcrystalline and as-grown nanocrystalline diamond substrates have been used to deposit AlN of different thickness under equal sputtering conditions. For the smoother substrates, the FWHM of the rocking curve of the (002) AlN peak varies from 3.8° to 2.7° with increasing power. SAW one port resonators have been fabricated on these films, whose electrical characterization (in terms of S11 parameters) is reported.

Fabrication and characterization at high temperature of AlGaN/GaN enhancement HEMTs

Enhancement-mode (E-mode) high electron mobility transistors (HEMTs) based on a standard AlGaN/GaN heterostructure have been fabricated using two different methods: 19F implantation and fluorine-based plasma treatment. The need of a thermal annealing after both treatments has been proven in order to restore the ID and gm levels. DC characterization at high temperature has demonstrated that ID and gm decrease reversibly due to the reduction of the electron mobility and the drift velocity. Pulsed measurements (state period and variable pulse width) have been performed to study the self-heating effects.

Processing and adsorption control in ZnO single nanowire photodetectors

ZnO single nanowire photodetectors have been measured in different ambient conditions in order to understand and control adsorption processes on the surface. A decrease in the conductivity has been observed as a function of time when the nanowires are exposed to air, due to adsorbed O2/H2O species at the nanowire surface. In order to have a device with stable characteristics in time, thermal desorption has been used to recover the original conductivity followed by PMMA coating of the exposed nanowire surface.

Solution-processed organic devices developed by a novel cost-effective patterning technique based on electrical erosion

Application of arc erosion to the patterning of metallic contacts in organic devices is presented. A home-made systems and details of the working principles are described. Advantages and drawbacks of this novel technology are discussed.

Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application.

Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells

Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.

The intermediate band approach in the third solar cell generation context

Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.