Stopping power dependence of nitrogen sputtering yields in copper nitride films under swift-ion irradiation: Exciton model approach

Nitrogen sputtering yields as high as 104 atoms/ion, are obtained by irradiating N-rich-Cu3N films (N concentration: 33 ± 2 at.%) with Cu ions at energies in the range 10?42 MeV. The kinetics of N sputtering as a function of ion fluence is determined at several energies (stopping powers) for films deposited on both, glass and silicon substrates. The kinetic curves show that the amount of nitrogen release strongly increases with rising irradiation fluence up to reaching a saturation level at a low remaining nitrogen fraction (5?10%), in which no further nitrogen reduction is observed. The sputtering rate for nitrogen depletion is found to be independent of the substrate and to linearly increase with electronic stopping power (Se). A stopping power (Sth) threshold of ?3.5 keV/nm for nitrogen depletion has been estimated from extrapolation of the data. Experimental kinetic data have been analyzed within a bulk molecular recombination model. The microscopic mechanisms of the nitrogen depletion process are discussed in terms of a non-radiative exciton decay model. In particular, the estimated threshold is related to a minimum exciton density which is required to achieve efficient sputtering rates.

Relativistic high-current electron-beam stopping-power characterization in solids and plasmas: collisional versus resistive effects.

We present experimental and numerical results on intense-laser-pulse-produced fast electron beams transport through aluminum samples, either solid or compressed and heated by laser-induced planar shock propagation. Thanks to absolute K� yield measurements and its very good agreement with results from numerical simulations, we quantify the collisional and resistive fast electron stopping powers: for electron current densities of � 8 � 1010 A=cm2 they reach 1:5 keV=�m and 0:8 keV=�m, respectively. For higher current densities up to 1012 A=cm2, numerical simulations show resistive and collisional energy losses at comparable levels. Analytical estimations predict the resistive stopping power will be kept on the level of 1 keV=�m for electron current densities of 1014 A=cm2, representative of the full-scale conditions in the fast ignition of inertially confined fusion targets.

Amorphization kinectics under swift heavy ion irradiation: a cumulative overlapping-track approach

A simple illustrative physical model is presented to describe the kinetics of damage and amorphization by swiftheavyions (SHI) in LiNbO3. The model considers that every ion impact generates initially a defective region (halo) and a full amorphous core whose relative size depends on the electronic stopping power. Below a given stopping power threshold only a halo is generated. For increasing fluences the amorphized area grows monotonically via overlapping of a fixed number N of halos. In spite of its simplicity the model, which provides analytical solutions, describes many relevant features of the kinetic behaviour. In particular, it predicts approximate Avrami curves with parameters depending on stopping power in qualitative accordance with experiment that turn into Poisson laws well above the threshold value

Kinetics of amorphization induced by swift heavy ions in α-quartz

The kinetics of amorphization in crystalline SiO2 (α-quartz) under irradiation with swift heavy ions (O+1 at 4 MeV, O+4 at 13 MeV, F+2 at 5 MeV, F+4 at 15 MeV, Cl+3 at 10 MeV, Cl+4 at 20 MeV, Br+5 at 15 and 25 MeV and Br+8 at 40 MeV) has been analyzed in this work with an Avrami-type law and also with a recently developed cumulative approach (track-overlap model). This latter model assumes a track morphology consisting of an amorphous core (area σ) and a surrounding defective halo (area h), both being axially symmetric. The parameters of the two approaches which provide the best fit to the experimental data have been obtained as a function of the electronic stopping power Se. The extrapolation of the σ(Se) dependence yields a threshold value for amorphization, Sth ≈ 2.1 keV/nm; a second threshold is also observed around 4.1 keV/nm. We believe that this double-threshold effect could be related to the appearance of discontinuous tracks in the region between 2.1 and 4.1 keV/nm. For stopping power values around or below the lower threshold, where the ratio h/σ is large, the track-overlap model provides a much better fit than the Avrami function. Therefore, the data show that a right modeling of the amorphization kinetics needs to take into account the contribution of the defective track halo. Finally, a short comparative discussion with the kinetic laws obtained for elastic collision damage is given.

Refractive index changes in amorphous SiO2 (silica) by swift ion irradiation

The refractive index changes induced by swift ion-beam irradiation in silica have been measured either by spectroscopic ellipsometry or through the effective indices of the optical modes propagating through the irradiated structure. The optical response has been analyzed by considering an effective homogeneous medium to simulate the nanostructured irradiated system consisting of cylindrical tracks, associated to the ion impacts, embedded into a virgin material. The role of both, irradiation fluence and stopping power, has been investigated. Above a certain electronic stopping power threshold (∼2.5 keV/nm), every ion impact creates an axial region around the trajectory with a fixed refractive index (around n = 1.475) corresponding to a certain structural phase that is independent of stopping power. The results have been compared with previous data measured by means of infrared spectroscopy and small-angle X-ray scattering; possible mechanisms and theoretical models are discussed.

Ionoluminescence as sensor of structural disorder in crystalline SiO2: determination of amorphization threshold by swift heavy ions

Ionoluminescence (IL) has been used in this work as a sensitive tool to probe the microscopic electronic processes and structural changes produced on quartz by the irradiation with swift heavy ions. The IL yields have been measured as a function of irradiation fluence and electronic stopping power. The results are consistent with the assignment of the 2.7 eV (460 nm) band to the recombination of self-trapped excitons at the damaged regions in the irradiated material. Moreover, it was possible to determine the threshold for amorphization by a single ion impact, as 1:7 keV/nm, which agrees well with the results of previous studies.

Electronic damage in quartz (c-SiO2) by MeV ion irradiations: Potentiality for optical waveguiding applications

The damage induced on quartz (c-SiO2) by heavy ions (F, O, Br) at MeV energies, where electronic stopping is dominant, has been investigated by RBS/C and optical methods. The two techniques indicate the formation of amorphous layers with an isotropic refractive index (n = 1.475) at fluences around 1014 cm−2 that are associated to electronic mechanisms. The kinetics of the process can be described as the superposition of linear (possibly initial Poisson curve) and sigmoidal (Avrami-type) contributions. The coexistence of the two kinetic regimes may be associated to the differential roles of the amorphous track cores and preamorphous halos. By using ions and energies whose maximum stopping power lies inside the crystal (O at 13 MeV, F at 15 MeV and F at 30 MeV) buried amorphous layer are formed and optical waveguides at the sample surface have been generated.

Ionoluminescence induced by swift heavy ions in silica and quartz: a comparative analysis

Ionoluminescence (IL) of the two SiO2 phases, amorphous silica and crystalline quartz, has been comparatively investigated in this work, in order to learn about the structural defects generated by means of ion irradiation and the role of crystalline order on the damage processes. Irradiations have been performed with Cl at 10 MeV and Br at 15 MeV, corresponding to the electronic stopping regime (i.e., where the electronic stopping power Se is dominant) and well above the amorphization threshold. The light-emission kinetics for the two main emission bands, located at 1.9 eV (652 nm) and 2.7 eV (459 nm), has been measured under the same ion irradiation conditions as a function of fluence for both, silica and quartz. The role of electronic stopping power has been also investigated and discussed within current views for electronic damage. Our experiments provide a rich phenomenological background that should help to elucidate the mechanisms responsible for light emission and defect creation.

Tailoring the Optical Properties of Silica Irradiated with Swift Heavy Ions

Irradiation with swift heavy ions (SHI), roughly defined as those having atomic masses larger than 15 and energies exceeding 1 MeV/amu, may lead to significant modification of the irradiated material in a nanometric region around the (straight) ion trajectory (i.e., latent tracks). In the case of amorphous silica it has been reported that SHI irradiation originates nano-tracks of either higher density than the virgin material (for low electronic stopping powers, Se < 7 keV/nm) [1] or having a low-density core and a dense shell (Se > 12 keV/nm) [2]. The intermediate region has not been studied in detail but we will show in this work that essentially no changes in density occur in this zone. An interesting effect of the compaction is that the refractive index is increased with respect to that of the surroundings. In the first Se region it is clear that track overlapping leads to continuous amorphous layers that present a significant contrast with respect to the pristine substrate and this has been used to produce optical waveguides. The optical effects of intermediate and high stopping powers, on the other hand, are largely unknown so far. In this work we have studied theoretically (molecular dynamics and optical simulations) and experimentally (irradiation with SHI and optical characterization) the dependence of the macroscopic optical properties (i.e., the refractive index of the effective medium, n_EMA) on the electronic stopping power of the incoming ions. Our results show that the refractive index of the irradiated silica is not increased in the intermediate region, as expected; however, the core-shell tracks of the high-Se region produce a quite effective enhancement of n_EMA that could prove attractive for the fabrication of optical waveguides at ultralow fluences (as low as 1E11 cm^-2). 1. J. Manzano, J. Olivares, F. Agulló-López, M. L. Crespillo, A. Moroño, and E. Hodgson, "Optical waveguides obtained by swift-ion irradiation on silica (a-SiO2)," Nucl. Instrum. Meth. B 268, 3147-3150 (2010). 2. P. Kluth, C. S. Schnohr, O. H. Pakarinen, F. Djurabekova, D. J. Sprouster, R. Giulian, M. C. Ridgway, A. P. Byrne, C. Trautmann, D. J. Cookson, K. Nordlund, and M. Toulemonde, "Fine structure in swift heavy ion tracks in amorphous SiO2," Phys. Rev. Lett. 101, 175503 (2008).