Characterization of the manufacturing processes to grow triple-junction solar cells

A number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper. The opportunity for successfully applying the combination of reflectance and reflectance anisotropy spectroscopy in situ methods for investigating III-V structure growth on a Ge substrate has been demonstrated. Photovoltaic properties of the III-V/Ge narrow-band subcell of the triple-junction solar cells have been investigated. It has been shown that there are excess currents in the Ge photovoltaic p-n junctions, and they have the tunneling or thermotunneling character. The values of the diode parameters for these current flow mechanisms have been determined. The potential barrier at the III-V/Ge interface was determined and the origin of this barrier formation during MOVPE heterogrowth was suggested.

The segmental approximation in multijunction solar cells

The segmental approach has been considered to analyze dark and light I-V curves. The photovoltaic (PV) dependence of the open-circuit voltage (Voc), the maximum power point voltage (Vm), the efficiency (?) on the photogenerated current (Jg), or on the sunlight concentration ratio (X), are analyzed, as well as other photovoltaic characteristics of multijunction solar cells. The characteristics being analyzed are split into monoexponential (linear in the semilogarithmic scale) portions, each of which is characterized by a definite value of the ideality factor A and preexponential current J0. The monoexponentiality ensures advantages, since at many steps of the analysis, one can use the analytical dependences instead of numerical methods. In this work, an experimental procedure for obtaining the necessary parameters has been proposed, and an analysis of GaInP/GaInAs/Ge triple-junction solar cell characteristics has been carried out. It has been shown that up to the sunlight concentration ratios, at which the efficiency maximum is achieved, the results of calculation of dark and light I-V curves by the segmental method fit well with the experimental data. An important consequence of this work is the feasibility of acquiring the resistanceless dark and light I-V curves, which can be used for obtaining the I-V curves characterizing the losses in the transport part of a solar cell.

Accurate Analysis of Subharmonic Oscillations of V^2 and V^2Ic Controls Applied to Buck Converter

V2Ic control provides very fast dynamic performance to the Buck converter both under load steps and under voltage reference steps. However, the design of this control is complex since it is prone to subharmonic oscillations and several parameters affect the stability of the system. This paper derives and validates a very accurate modeling and stability analysis of a closed-loop V2Ic control using the Floquet theory. This allows the derivation of sensitivity analysis to design a robust converter. The proposed methodology is validated on a 5-MHz Buck converter. The work is also extended to V2 control using the same methodology, showing high accuracy and robustness. The paper also demonstrates, on the V2 control, that even a low bandwidth-linear controller can affect the stability of a ripple-based control.