22 resultados para Posadas

em Universidad Politécnica de Madrid


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This paper analyzes the noise and gain measurement of microwave differential amplifiers using two passive baluns. A general model of the baluns is considered, including potential losses and phase/amplitude unbalances. This analysis allows de-embedding the actual gain and noise performance of the isolated amplifier by using single-ended measurements of the cascaded system and baluns. Finally, measured results from two amplifier prototypes are used to validate the theoretical principles.

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This letter presents a novel recursive active filter topology that provides dual-band performance, with independent tuning capability in both bands. The dual-band operation is achieved by using two independent feedback lines. Additionally, linear phase shifters based on left-handed cells are included in these two branches in order to tune the center frequency of both pass bands.

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This paper analyses the noise and gain measurement of microwave differential amplifiers using two passive baluns. A model of the baluns that includes potential losses and unbalances has been considered. This analysis allows to de-embed the actual performance of the differential device from the single-ended measurements of the two-port cascaded system and the baluns. The method has been validated with measured results from a fully-differential amplifier prototype.

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A set of measurements of electromagnetic properties of building materials is presented in this work. The method is based on the measurement of the polarization state of the reflected signal from the material under study at a fixed angle of incidence. From the measured data, by using the Fresnel equations, it has been obtained the dielectric constant. Measurements were done by using two horn antennas at the frequency of 9 GHz. The obtained results are compared with the free space reflexion and transmission Fresnel method and other reflection methods based on a conductor waveguide. The method explained in this work can be used for other type of materials and its main advantage is the non-destructive character and the ease implementation.

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This paper analyses the noise and gain measurement of microwave differential amplifiers using two passive baluns. A model of the baluns that includes potential losses and unbalances has been considered. This analysis allows de-embedding actual performance of the differential device from the single-ended measurements of the two-port cascaded system and the baluns. The method has been validated with measured results from a fully-differential amplifier prototype.

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Modern communication systems use multifrequency or broadband antennas in order to provide multiple communication services. One of the biggest problems associated to all these systems comes from their batteries life cycle. Nowadays, great efforts are being undertaken in order to harvest energy from as many places as possible. In addition, if the two cycles of the corresponding wave could be used, it would be good in order to increase the RF-DC power conversion. This paper presents a multifrequency and full wave-rectifying antenna for microwave application

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A focusing system for a 300 GHz radar with two target distances (5m and 10m) is proposed, having 1cm resolution in both cases. The focusing system is based on a gaussian telescope scheme and it has been designed using gaussian beam quasi-optical propagation theory with a homemade Matlab analysis tool. It has been translated into a real focusing system based on two elliptical mirrors and a plane mirror in order to have scanning capabilities and validated using the commercial antenna software GRASP

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In this paper, the classic oscillator design methods are reviewed, and their strengths and weaknesses are shown. Provisos for avoiding the misuse of classic methods are also proposed. If the required provisos are satisfied, the solutions provided by the classic methods (oscillator start-up linear approximation) will be correct. The provisos verification needs to use the NDF (Network Determinant Function). The use of the NDF or the most suitable RRT (Return Relation Transponse), which is directly related to the NDF, as a tool to analyze oscillators leads to a new oscillator design method. The RRT is the "true" loop-gain of oscillators. The use of the new method is demonstrated with examples. Finally, a comparison of NDF/RRT results with the HB (Harmonic Balance) simulation and practical implementation measurements prove the universal use of the new methods.

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In this paper, a new linear method for optimizing compact low noise oscillators for RF/MW applications will be presented. The first part of this paper makes an overview of Leeson's model. It is pointed out, and it is demonstrates that the phase noise is always the same inside the oscillator loop. It is presented a general phase noise optimization method for reference plane oscillators. The new method uses Transpose Return Relations (RRT) as true loop gain functions for obtaining the optimum values of the elements of the oscillator, whatever scheme it has. With this method, oscillator topologies that have been designed and optimized using negative resistance, negative conductance or reflection coefficient methods, until now, can be studied like a loop gain method. Subsequently, the main disadvantage of Leeson's model is overcome, and now it is not only valid for loop gain methods, but it is valid for any oscillator topology. The last section of this paper lists the steps to be performed to use this method for proper phase noise optimization during the linear design process and before the final non-linear optimization. The power of the proposed RRT method is shown with its use for optimizing a common oscillator, which is later simulated using Harmonic Balance (HB) and manufactured. Then, the comparison of the linear, HB and measurements of the phase noise are compared.

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Abstract. This paper describes a new and original method for designing oscillators based on the Normalized Determinant Function (NDF) and Return Relations (RRT)- Firstly, a review of the loop-gain method will be performed. The loop-gain method pros, cons and some examples for exploring wrong solutions provided by this method will be shown. This method produces in some cases wrong solutions because some necessary conditions have not been fulfilled. The required necessary conditions to assure a right solution will be described. The necessity of using the NDF or the Transpose Return Relations (RRT), which are related with the True Loop-Gain, to test the additional conditions will be demonstrated. To conclude this paper, the steps for oscillator design and analysis, using the proposed NDF/RRj method, will be presented. The loop-gain wrong solutions will be compared with the NDF/RRj and the accuracy of this method to estimate the oscillation frequency and QL will be demonstrated. Some additional examples of plane reference oscillators (Z/Y/T), will be added and they will be analyzed with the new NDF/RRj proposed method, even these oscillators cannot be analyzed using the classic loop gain method.

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The effects of power and time conditions of in situ N2 plasma treatment, prior to silicon nitride (SiN) passivation, were investigated on an AlGaN/GaN high-electron mobility transistor (HEMT). These studies reveal that N2 plasma power is a critical parameter to control the SiN/AlGaN interface quality, which directly affects the 2-D electron gas density. Significant enhancement in the HEMT characteristics was observed by using a low power N2 plasma pretreatment. In contrast, a marked gradual reduction in the maximum drain-source current density (IDS max) and maximum transconductance (gm max), as well as in fT and fmax, was observed as the N2 plasma power increases (up to 40% decrease for 210 W). Different mechanisms were proposed to be dominant as a function of the discharge power range. A good correlation was observed between the device electrical characteristics and the surface assessment by atomic force microscopy and Kelvin force microscopy techniques.

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Arrays of coherently driven photomixers with antenna (antenna emitter arrays, AEAs) have been evaluated as a possibility to overcome the power limitations of individual conventional photomixers with antenna (?antenna emitters?, AEs) for the generation of continuous-wave (CW) THz radiation. In this paper, ?large area emitters? (LAEs) are proposed as an alternative approach, and compared with AEAs. In this antenna-free new scheme of photomixing, the THz radiation originates directly from the acceleration of photo-induced charge carriers generated within a large semiconductor area. The quasi-continuous distribution of emitting elements corresponds to a high-density array and results in favorable radiation profiles without side lobes. Moreover, the achievable THz power is expected to outnumber even large AEAs. Last not least, the technological challenge of fabricating LAEs appears to be significantly less demanding.

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Using CMOS transistors for terahertz detection is currently a disruptive technology that offers the direct integration of a terahertz detector with video preamplifiers. The detectors are based on the resistive mixer concept and its performance mainly depends on the following parameters: type of antenna, electrical parameters (gate to drain capacitor and channel length of the CMOS device) and foundry. Two different 300 GHz detectors are discussed: a single transistor detector with a broadband antenna and a differential pair driven by a resonant patch antenna.

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We discuss two different approaches to overcome the power limitations of CW THz generation imposed to conventional photomixers. The increase in power achievable by using arrays of AEs is studied. Then ?large area emitters? are proposed as an alternate approach to overcome the power limitations. In this antenna-free new scheme of photomixing, the THz radiation originates directly from the acceleration of photo-induced charge carriers generated within a large semiconductor area. The quasi-continuous distribution of emitting elements corresponds to a high-density array and results in particularly favorable radiation profiles.

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Using CMOS transistors for terahertz detection is currently a disruptive technology that offers the direct integration of a terahertz detector with video preamplifiers. The detectors are based on the resistive mixer concept and performance mainly depends on the following parameters: type of antenna, electrical parameters (gate to drain capacitor and channel length of the CMOS device) and foundry. Two different 300 GHz detectors are discussed: a single transistor detector with a broadband antenna and a differential pair driven by a resonant patch antenna.