5 resultados para Passé

em Universidad Politécnica de Madrid


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With the introduction of the European Higher Education Area and the development of the "Bologna" method in learning certain technological subjects, a pilot assessment procedure was launched in the "old" plan to observe, monitor and analyze the acquiring knowledge of senior students in various academic courses. This paper is a reflection on culture and knowledge. Will students accommodate to get a lower score on tests because they know they have a lot of tooltips to achieve their objectives?. Are their skills lower for these reason?.

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The power generated by large grid-connected photovoltaic (PV) plants depends greatly on the solar irradiance. This paper studies the effects of the solar irradiance variability analyzing experimental 1-s data collected throughout a year at six PV plants, totaling 18 MWp. Each PV plant was modeled as a first order filter function based on an analysis in the frequency domain of the irradiance data and the output power signals. An empiric expression which relates the filter parameters and the PV plant size has been proposed. This simple model has been successfully validated precisely determining the daily maximum output power fluctuation from incident irradiance measurements.

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We propose a systematic method for the synthesis of arbitrary group delay responses by using allpass structures of coupled optical cavities. Optimum structure parameters design, in terms of filter order and accuracy, are obtained.

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Strained fin is one of the techniques used to improve the devices as their size keeps reducing in new nanoscale nodes. In this paper, we use a predictive technology of 14 nm where pMOS mobility is significantly improved when those devices are built on top of long, uncut fins, while nMOS devices present the opposite behavior due to the combination of strains. We explore the possibility of boosting circuit performance in repetitive structures where long uncut fins can be exploited to increase fin strain impact. In particular, pMOS pass-gates are used in 6T complementary SRAM cells (CSRAM) with reinforced pull-ups. Those cells are simulated under process variability and compared to the regular SRAM. We show that when layout dependent effects are considered the CSRAM design provides 10% to 40% faster access time while keeping the same area, power, and stability than a regular 6T SRAM cell. The conclusions also apply to 8T SRAM cells. The CSRAM cell also presents increased reliability in technologies whose nMOS devices have more mismatch than pMOS transistors.

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In this paper, the design and experimental characterization of a tunable microstrip bandpass filter based on liquid crystal technology are presented. A reshaped microstrip dual-mode filter structure has been used in order to improve the device performance. Specifically, the aim is to increase the pass-band return loss of the filter by narrowing the filter bandwidth. Simulations confirm the improvement of using this new structure, achieving a pass-band return loss increase of 1.5 dB at least. Because of the anisotropic properties of LC molecules, a filter central frequency shift from 4.688 GHz to 5.045 GHz, which means a relative tuning range of 7.3%, is measured when an external AC voltage from 0 Vrms to 15 Vrms is applied to the device.