Offsets, Conchoids and Pedal Surfaces

We discuss three geometric constructions and their relations, namely the offset, the conchoid and the pedal construction. The offset surface F d of a given surface F is the set of points at fixed normal distance d of F. The conchoid surface G d of a given surface G is obtained by increasing the radius function by d with respect to a given reference point O. There is a nice relation between offsets and conchoids: The pedal surfaces of a family of offset surfaces are a family of conchoid surfaces. Since this relation is birational, a family of rational offset surfaces corresponds to a family of rational conchoid surfaces and vice versa. We present theoretical principles of this mapping and apply it to ruled surfaces and quadrics. Since these surfaces have rational offsets and conchoids, their pedal and inverse pedal surfaces are new classes of rational conchoid surfaces and rational offset surfaces.

InN/GaN heterojunction electrical behavior

Indium nitride (InN) has been the subject of intense research in recent years. Some of its most attractive features are its excellent transport properties such as its small band edge electron effective mass, high electron mobilities and peak drift velocities, and high frequency transient drift velocity oscillations [1]. These suggest enormous potential applications for InN in high frequency electronic devices. But to date the high unintentional bulk electron concentration (n~1018 cm-3) of undoped InN samples and the surface electron accumulation layer make it a hard task to create a reliable metalsemiconductor Schottky barrier. Some attempts have been made to overcome this problem by means of material oxidation [2] or deposition of insulators [3]. In this work we present a way to obtain an electrical rectification behaviour by means of heterojunction growth. Due to the big band gap differences among nitride semiconductors, it’s possible to create a structure with high band offsets. In InN/GaN heterojunctions, depending on the GaN doping, the magnitude of conduction and valence band offset are critical parameters which allow distinguishing among different electrical behaviours. The earliest estimate of the valence band offset at an InN–GaN heterojunction in a wurtzite structure was measured to be ~0.85 eV [4], while the Schottky barrier heights were determined to be ~ 1,4 eV [5].We grew In-face InN layer with varying thickness (between 150 nm and 1 mm) by plasma assisted molecular beam epitaxy (PA-MBE) on GaNntemplates (GaN/Al2O3), with temperatures ranging between 300°C and 450°C. The different doping in GaN template (Si doping, Fe doping and Mg doping) results in differences in band alignments of the two semiconductors changing electrical barriers for carriers and consequently electrical conduction behaviour. The processing of the devices includes metallization of the ohmic contacts on InN and GaN, for which we used Ti/Al/Ni/Au. Whereas an ohmic contact on InN is straightforward, the main issue was the fabrication of the contact on GaN due to the very low decomposition temperature of InN. A standard ohmic contact on GaN is generally obtained by high temperature rapid thermal annealing (RTA), typically done between 500ºC and 900ºC[6]. In this case, the limitation due to the presence of In-face InN imposes an upper limit on the temperature for the thermal annealing process and ohmic contact formation of about 450°C. We will present results on the morphology of the InN layers by X-Ray diffraction and SEM, and electrical measurements, in particular current-voltage and capacitance-voltage characteristics.

Spectral-analysis-surface-waves-method in ground characterization

The prediction of train induced vibration levels in structures close to railway tracks before track construction starts is important in order to avoid having to implement costly mitigation measures afterwards. The used models require an accurate characterization of the propagation medium i.e. the soil layers. To this end the spectral analysis of surface waves (SASW) method has been chosen among the active surface waves techniques available. As dynamic source a modal sledge hammer has been used. The generated vibrations have been measured at known offsets by means of several accelerometers. There are many parameters involved in estimating the experimental dispersion curve and, later on, thickness and propagation velocities of the different layers. Tests have been carried out at the Segovia railway station. Its main building covers some of the railway tracks and vibration problems in the building should be avoided. In the paper these tests as well as the influence of several parameters on the estimated soil profile will be detailed.

Surface velocity and ice discharge of the ice cap on King George Island, Antarctica

Glaciers on King George Island, Antarctica, have shown retreat and surface lowering in recent decades, concurrent with increasing air temperatures. A large portion of the glacier perimeter is ocean-terminating, suggesting possible large mass losses due to calving and submarine melting. Here we estimate the ice discharge into the ocean for the King George Island ice cap. L-band synthetic aperture radar images covering the time-span January 2008 to January 2011 over King George Island are processed using an intensity-tracking algorithm to obtain surface velocity measurements. Pixel offsets from 40 pairs of radar images are analysed and inverted to estimate a weighted average surface velocity field. Ice thicknesses are derived from simple principles of ice flow mechanics using the computed surface velocity fields and in situ thickness data. The maximum ice surface speeds reach mayor que 225 m/yr, and the total ice discharge for the analysed flux gates of King George Island is estimated to be 0.720+/-0.428 Gt/yr, corresponding to a specific mass loss of 0.64+/-0.38 m w.e./yr over the area of the entire ice cap (1127 km2).

Rational conchoid and offset constructions: algorithms and implementation

This paper is framed within the problem of analyzing the rationality of the components of two classical geometric constructions, namely the offset and the conchoid to an algebraic plane curve and, in the affirmative case, the actual computation of parametrizations. We recall some of the basic definitions and main properties on offsets (see [13]), and conchoids (see [15]) as well as the algorithms for parametrizing their rational components (see [1] and [16], respectively). Moreover, we implement the basic ideas creating two packages in the computer algebra system Maple to analyze the rationality of conchoids and offset curves, as well as the corresponding help pages. In addition, we present a brief atlas where the offset and conchoids of several algebraic plane curves are obtained, their rationality analyzed, and parametrizations are provided using the created packages.

Comparing the Luttinger–Kohn–Pikus–Bir and the Empiric K·P Hamiltonians in quantum dot intermediate band solar cells manufactured in zincblende semiconductors

The calculation of the energy spectrum and absorption coefficients of quantum dot nanostructured intermediate band solar cells using the Empiric K·P Hamiltonian method and its agreement with experimental data are summarized. The well established Luttinger Kohn Hamiltonian modified by Pikus and Bir for strained material, such as quantum dot arrays, is presented using a simplified strain field that allows for square band offsets. The energy spectrum and absorption coefficients are calculated with this new Hamiltonian. With the approximations made the energy spectrum results to be exactly the same but the absorption coefficient fits experiments less accurately. The computer time using the latter Hamiltonian is much longer than the former one.

Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnTe/n-ZnSe Solar Cells

Limitations on the open-circuit voltage of p-ZnTe/n-ZnSe heterojunction solar cells are studied via current-voltage (I-V) measurements under solar concentration and at variable temperature. The open-circuit voltage reaches a maximum value of 1.95 V at 77 K and 199 suns. The open-circuit voltage shows good agreement with the calculated built-in potential of 2.00 V at 77 K. These results suggest that the open-circuit voltage is limited by heterojunction band offsets associated with the type-II heterojunction band lineup, rather than the bandgap energy of the ZnTe absorber material.