High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

We report on properties of high quality ~60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be +/- 1.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.

Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy

The high lattice mismatch between III-nitride binaries (InN, GaN and AlN) remains a key problem to grow high quality III-nitride heterostructures. Recent interest has been focused on the growth of high-quality InAlN layers, with approximately 18% of indium incorporation, in-plane lattice-matched (LM) to GaN. While a lot of work has been done by metal-organic vapour phase epitaxy (MOVPE) by Carlin and co-workers, its growth by molecular beam epitaxy (MBE) is still in infancy

Central pain augmentation in fibromyalgia during subjectively-matched mechanical stimulation

The precise pathophysiology of fibromyalgia, a syndrome characterized by, among other symptoms, chronic widespread pain, remains to be elucidated (Abeles et al., 2007). The fact that, when subjected to the same amount of stimulation, patients show enhanced brain responses as compared to controls provides evidence of central pain augmentation in this syndrome. We aimed to characterize brain response differences when stimulation is adjusted to elicit similar subjective levels of pain in both groups.

Influence of gravity on heavy particle statistics in turbulent channel and pipe flow at matched Kàrmàn number

In this work, we use large eddy simulations (LES) and Lagrangian tracking to study the influence of gravity on particle statistics in a fully developed turbulent upward/downward flow in a vertical channel and pipe at matched Kàrmàn number. Only drag and gravity are considered in the equation of motion for solid particles, which are assumed to have no influence on the flow field. Particle interactions with the wall are fully elastic. Our findings obtained from the particle statistics confirm that: (i) the gravity seems to modify both the quantitative and qualitative behavior of the particle distribution and statistics of the particle velocity in wall normal direction; (ii) however, only the quantitative behavior of velocity particle in streamwise direction and the root mean square of velocity components is modified; (iii) the statistics of fluid and particles coincide very well near the wall in channel and pipe flow with equal Kàrmàn number; (iv) pipe curvature seems to have quantitative and qualitative influence on the particle velocity and on the particle concentration in wall normal direction.

Sensitivity analysis for active matched antennas with non-foster elements

During the last years many researchers have been working on the active matching or on non-Foster matching networks for one- and two-port electrically small antennas (ESAs). A new parameter on the sensitivity of the two-port electrically small antenna when loaded with a non-F oster network is presented. This sensitivity analysis will allow us to choose what kind of antennas can be properly matched with non-Foster networks and their position in order to optimi ze the performance of the design. Then, a typical high Q two-port antenna will be harder to match over a broad bandwidth, since |S21| is very small and only agrees with |S11| over very small frequency bands, yielding very large sensitivity values. However, for these two-port antennas, if high levels of coupling can be engineered for a high Q multiple-port antenna, the return and insertion losses can be similar over larger bandwidths and, hence, the sensitivity can be kept low over larger bandwidths, enabling broader impedance matched bandwidths to be achieved, even for highly resonant antennas.