Enhanced Exchange And Reduced Magnetization of Gd in an Fe/Gd/Fe Trilayer

The exchange interaction of Gd adjacent to Fe has been characterized by transport measurements on a double spin valve with a Fe/Gd/Fe trilayer as the middle layer. Our measurements show that the ferromagnetism of the Gd is enhanced by the presence of the Fe, and it remains ferromagnetic over its Curie temperature up to a thickness no smaller than 1 nm adjacent to the Fe. This thickness is more than double what has been reported before. Additionally, the saturation magnetization of the thin Gd layer sandwiched in Fe was found to be half of its bulk value. This reduced magnetization does not seem to be related to the proximity of Fe but rather to the incomplete saturation of Gd even for very high fields

Diffusion of Zn into GaAs and AlGaAs from isothermal Liquid-phase epitaxy solutions

In this work we present results of zinc diffusion in GaAs using the liquid phase epitaxy technique from liquid solutions of Ga‐As‐Zn and Ga‐As‐Al‐Zn. Using silicon‐doped n‐GaAs substrates, working at a diffusion temperature of 850 °C, and introducing a dopant concentration ranging 1018–1019 cm−3, the most important findings regarding the diffusion properties are as follows: (a) zinc concentration in the solid depends on the square root of zinc atomic fraction in the liquid; (b) the diffusion is dominated by the interstitial‐substitutional process; (c) the diffusivity D varies as about C3 in the form D=2.9×10−67C3.05; (d) aluminum plays the role of the catalyst of the diffusion process, if it is introduced in the liquid solution, since it is found that D varies as (γAsXlAs)−1; (e) the zinc interstitial is mainly doubly ionized (Zn++i); (f) the zinc diffusion coefficient in Al0.85 Ga0.15 As is about four times greater than in GaAs; (g) by means of all these results, it is possible to control zinc diffusion processes in order to obtain optimized depth junctions and doping levels in semiconductor device fabrication.

Magnetization reversal signatures in the magnetoresistance of magnetic multilayers

The simultaneous determination of magnetoresistance and vectorial-resolved magnetization hysteresis curves in a spin valve structure reveals distinct magnetoresistive features for different magnetic field orientations, which are directly related to the magnetization reversal processes. Measurements performed in the whole angular range demonstrate that the magnetoresistive response originates from the intrinsic anisotropic angular dependence of the magnetization orientation between the two ferromagnetic layers. This also provides direct proof that the spin-dependent scattering in the bulk of the magnetic layers is at the origin of the magnetoresistive signal.

Transition from isentropic to isothermal expansion in laser produced plasma

The transition that the expansion flow of laser-produced plasmas experiences when one moves from long, low intensity pulses (temperature vanishing at the isentropic plasma-vacuum front,lying at finite distance) to short, intense ones (non-zero, uniform temperature at the plasma-vacuum front, lying at infinity) is studied. For plznar geometry and lqge ion number Z, the transition occurs for dq5/dt=0.14(27/8)k712Z’1zn$/m4f, 12nK,,; mi, and K are laser intensity, critical density,ion mass, and Spitzer’s heat conduction coefficient. This result remains valid for finite Zit,h ough the numerical factor in d$/dt is different. Shorter wavelength lasers and higher 4 plasmas allow faster rising pulses below transition.

Magnetization reversal assisted by half antivortex states in nanostructured circular cobalt disks

The half antivortex, a fundamental topological structure which determines magnetization reversal of submicron magnetic devices with domain walls, has been suggested also to play a crucial role in spin torque induced vortex core reversal in circular disks. Here, we report on magnetization reversal in circular disks with nanoholes through consecutive metastable states with half antivortices. In-plane anisotropic magnetoresistance and broadband susceptibility measurements accompanied by micromagnetic simulations reveal that cobalt (Co) disks with two and three linearly arranged nanoholes directed at 45° and 135° with respect to the external magnetic field show reproducible step-like changes in the anisotropic magnetoresistance and magnetic permeability due to transitions between different intermediate states mediated by vortices and half antivortices confined to the dot nanoholes and edges, respectively. Our findings are relevant for the development of multi-hole based spintronic and magnetic memory devices.