Diffusion of Zn into GaAs and AlGaAs from isothermal Liquid-phase epitaxy solutions

In this work we present results of zinc diffusion in GaAs using the liquid phase epitaxy technique from liquid solutions of Ga‐As‐Zn and Ga‐As‐Al‐Zn. Using silicon‐doped n‐GaAs substrates, working at a diffusion temperature of 850 °C, and introducing a dopant concentration ranging 1018–1019 cm−3, the most important findings regarding the diffusion properties are as follows: (a) zinc concentration in the solid depends on the square root of zinc atomic fraction in the liquid; (b) the diffusion is dominated by the interstitial‐substitutional process; (c) the diffusivity D varies as about C3 in the form D=2.9×10−67C3.05; (d) aluminum plays the role of the catalyst of the diffusion process, if it is introduced in the liquid solution, since it is found that D varies as (γAsXlAs)−1; (e) the zinc interstitial is mainly doubly ionized (Zn++i); (f) the zinc diffusion coefficient in Al0.85 Ga0.15 As is about four times greater than in GaAs; (g) by means of all these results, it is possible to control zinc diffusion processes in order to obtain optimized depth junctions and doping levels in semiconductor device fabrication.

Transition from isentropic to isothermal expansion in laser produced plasma

The transition that the expansion flow of laser-produced plasmas experiences when one moves from long, low intensity pulses (temperature vanishing at the isentropic plasma-vacuum front,lying at finite distance) to short, intense ones (non-zero, uniform temperature at the plasma-vacuum front, lying at infinity) is studied. For plznar geometry and lqge ion number Z, the transition occurs for dq5/dt=0.14(27/8)k712Z’1zn$/m4f, 12nK,,; mi, and K are laser intensity, critical density,ion mass, and Spitzer’s heat conduction coefficient. This result remains valid for finite Zit,h ough the numerical factor in d$/dt is different. Shorter wavelength lasers and higher 4 plasmas allow faster rising pulses below transition.