Size and dimensionality effects in superconducting Mo thin films

Molybdenum is a low Tc, type I superconductor whose fundamental properties are poorly known. Its importance as an essential constituent of new high performance radiation detectors, the so-called transition edge sensors (TESs) calls for better characterization of this superconductor, especially in thin film form. Here we report on a study of the basic superconducting features of Mo thin films as a function of their thickness. The resistivity is found to rise and the critical temperature decreases on decreasing film thickness, as expected. More relevant, the critical fields along and perpendicular to the film plane are markedly different, thickness dependent and much larger than the thermodynamic critical field of Mo bulk. These results are consistent with a picture of type II 2D superconducting films, and allow estimates of the fundamental superconducting lengths of Mo. The role of morphology in determining the 2D and type II character of the otherwise type I molybdenum is discussed. The possible consequences of this behaviour on the performance of radiation detectors are also addressed

Strict and non-strict independent and-parallelism in logic programs: Correctness, efficiency, and compile-time conditions.

This paper presents some fundamental properties of independent and-parallelism and extends its applicability by enlarging the class of goals eligible for parallel execution. A simple model of (independent) and-parallel execution is proposed and issues of correctness and efficiency discussed in the light of this model. Two conditions, "strict" and "non-strict" independence, are defined and then proved sufficient to ensure correctness and efñciency of parallel execution: if goals which meet these conditions are executed in parallel the solutions obtained are the same as those produced by standard sequential execution. Also, in absence of failure, the parallel proof procedure does not genérate any additional work (with respect to standard SLD-resolution) while the actual execution time is reduced. Finally, in case of failure of any of the goals no slow down will occur. For strict independence the results are shown to hold independently of whether the parallel goals execute in the same environment or in sepárate environments. In addition, a formal basis is given for the automatic compile-time generation of independent and-parallelism: compile-time conditions to efficiently check goal independence at run-time are proposed and proved sufficient. Also, rules are given for constructing simpler conditions if information regarding the binding context of the goals to be executed in parallel is available to the compiler.

Sharing analysis of arrays, collections, and recursive structures

Precise modeling of the program heap is fundamental for understanding the behavior of a program, and is thus of signiflcant interest for many optimization applications. One of the fundamental properties of the heap that can be used in a range of optimization techniques is the sharing relationships between the elements in an array or collection. If an analysis can determine that the memory locations pointed to by different entries of an array (or collection) are disjoint, then in many cases loops that traverse the array can be vectorized or transformed into a thread-parallel versión. This paper introduces several novel sharing properties over the concrete heap and corresponding abstractions to represent them. In conjunction with an existing shape analysis technique, these abstractions allow us to precisely resolve the sharing relations in a wide range of heap structures (arrays, collections, recursive data structures, composite heap structures) in a computationally efflcient manner. The effectiveness of the approach is evaluated on a set of challenge problems from the JOlden and SPECjvm98 suites. Sharing information obtained from the analysis is used to achieve substantial thread-level parallel speedups.

A combined algorithm for analyzing structural controllability and observability of complex networks

In this paper a combined algorithm for analyzing structural controllability and observability of complex networks is presented. The algorithm addresses the two fundamental properties to guarantee structural controllability of a system: the absence of dilations and the accessibility of all nodes. The first problem is reformulated as a Maximum Matching search and it is addressed via the Hopcroft- Karp algorithm; the second problem is solved via a new wiring algorithm. Both algorithms can be combined to efficiently determine the number of required controllers and observers as well as the new required connections in order to guarantee controllability and observability in real complex networks. An application to a Twitter social network with over 100,000 nodes illustrates the proposed algorithms.

Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

Room temperature electroreflectance (ER) spectroscopy has been used to study the fundamental properties of AlxInyGa${}_{1-x-y}$N/AlN/GaN heterostructures under different applied bias. The (0001)-oriented heterostructures were grown by metal-organic vapor phase epitaxy on sapphire. The band gap energy of the AlxInyGa${}_{1-x-y}{\rm{N}}$ layers has been determined from analysis of the ER spectra using Aspnes' model. The obtained values are in good agreement with a nonlinear band gap interpolation equation proposed earlier. Bias-dependent ER allows one to determine the sheet carrier density of the two-dimensional electron gas and the barrier field strength.

Universality of the self gravitational potential energy of any fundamental particle.

Using the relation proposed by Weinberg in 1972, combining quantum and cosmological parameters, we prove that the self gravitational potential energy of any fundamental particle is a quantum, with physical properties independent of the mass of the particle. It is a universal quantum of gravitational energy, and its physical properties depend only on the cosmological scale factor R and the physical constants ℏ and c. We propose a modification of the Weinberg’s relation, keeping the same numerical value, but substituting the cosmological parameter H/c by 1/R.

Modelling of spectral properties and population kinetics studies of inertial fusión and laboratory astrophysical plasmas

Fundamental research and modelling in plasma atomic physics continue to be essential for providing basic understanding of many different topics relevant to high-energy-density plasmas. The Atomic Physics Group at the Institute of Nuclear Fusion has accumulated experience over the years in developing a collection of computational models and tools for determining the atomic energy structure, ionization balance and radiative properties of, mainly, inertial fusion and laser-produced plasmas in a variety of conditions. In this work, we discuss some of the latest advances and results of our research, with emphasis on inertial fusion and laboratory-astrophysical applications.

Properties and applications of high electron density structures based on InN and related compounds

El objetivo principal del presente trabajo es estudiar y explotar estructuras que presentan un gas bidimensional de electrones (2DEG) basadas en compuestos nitruros con alto contenido de indio. Existen muchas preguntas abiertas, relacionadas con el nitruro de indio y sus aleaciones, algunas de las cuales se han abordado en este estudio. En particular, se han investigado temas relacionados con el análisis y la tecnología del material, tanto para el InN y heteroestructuras de InAl(Ga)N/GaN como para sus aplicaciones a dispositivos avanzados. Después de un análisis de la dependencia de las propiedades del InN con respecto a tratamientos de procesado de dispositivos (plasma y térmicos), el problema relacionado con la formación de un contacto rectificador es considerado. Concretamente, su dificultad es debida a la presencia de acumulación de electrones superficiales en la forma de un gas bidimensional de electrones, debido al pinning del nivel de Fermi. El uso de métodos electroquímicos, comparados con técnicas propias de la microelectrónica, ha ayudado para la realización de esta tarea. En particular, se ha conseguido lamodulación de la acumulación de electrones con éxito. En heteroestructuras como InAl(Ga)N/GaN, el gas bidimensional está presente en la intercara entre GaN y InAl(Ga)N, aunque no haya polarización externa (estructuras modo on). La tecnología relacionada con la fabricación de transistores de alta movilidad en modo off (E-mode) es investigada. Se utiliza un método de ataque húmedo mediante una solución de contenido alcalino, estudiando las modificaciones estructurales que sufre la barrera. En este sentido, la necesidad de un control preciso sobre el material atacado es fundamental para obtener una estructura recessed para aplicaciones a transistores, con densidad de defectos e inhomogeneidad mínimos. La dependencia de la velocidad de ataque de las propiedades de las muestras antes del tratamiento es observada y comentada. Se presentan también investigaciones relacionadas con las propiedades básicas del InN. Gracias al uso de una puerta a través de un electrolito, el desplazamiento de los picos obtenidos por espectroscopia Raman es correlacionado con una variación de la densidad de electrones superficiales. En lo que concierne la aplicación a dispositivos, debido al estado de la tecnología actual y a la calidad del material InN, todavía no apto para dispositivos, la tesis se enfoca a la aplicación de heteroestructuras de InAl(Ga)N/GaN. Gracias a las ventajas de una barrera muy fina, comparada con la tecnología de AlGaN/GaN, el uso de esta estructura es adecuado para aplicaciones que requieren una elevada sensibilidad, estando el canal 2DEG más cerca de la superficie. De hecho, la sensibilidad obtenida en sensores de pH es comparable al estado del arte en términos de variaciones de potencial superficial, y, debido al poco espesor de la barrera, la variación de la corriente con el pH puede ser medida sin necesidad de un electrodo de referencia externo. Además, estructuras fotoconductivas basadas en un gas bidimensional presentan alta ganancia debida al elevado campo eléctrico en la intercara, que induce una elevada fuerza de separación entre hueco y electrón generados por absorción de luz. El uso de metalizaciones de tipo Schottky (fotodiodos Schottky y metal-semiconductormetal) reduce la corriente de oscuridad, en comparación con los fotoconductores. Además, la barrera delgada aumenta la eficiencia de extracción de los portadores. En consecuencia, se obtiene ganancia en todos los dispositivos analizados basados en heteroestructuras de InAl(Ga)N/GaN. Aunque presentando fotoconductividad persistente (PPC), los dispositivos resultan más rápidos con respeto a los valores que se dan en la literatura acerca de PPC en sistemas fotoconductivos. ABSTRACT The main objective of the present work is to study and exploit the two-dimensionalelectron- gas (2DEG) structures based on In-related nitride compounds. Many open questions are analyzed. In particular, technology and material-related topics are the focus of interest regarding both InNmaterial and InAl(Ga)N/GaNheterostructures (HSs) as well as their application to advanced devices. After the analysis of the dependence of InN properties on processing treatments (plasma-based and thermal), the problemof electrical blocking behaviour is taken into consideration. In particular its difficulty is due to the presence of a surface electron accumulation (SEA) in the form of a 2DEG, due to Fermi level pinning. The use of electrochemical methods, compared to standard microelectronic techniques, helped in the successful realization of this task. In particular, reversible modulation of SEA is accomplished. In heterostructures such as InAl(Ga)N/GaN, the 2DEGis present at the interface between GaN and InAl(Ga)N even without an external bias (normally-on structures). The technology related to the fabrication of normally off (E-mode) high-electron-mobility transistors (HEMTs) is investigated in heterostructures. An alkali-based wet-etching method is analysed, standing out the structural modifications the barrier underwent. The need of a precise control of the etched material is crucial, in this sense, to obtain a recessed structure for HEMT application with the lowest defect density and inhomogeneity. The dependence of the etch rate on the as-grown properties is observed and commented. Fundamental investigation related to InNis presented, related to the physics of this degeneratematerial. With the help of electrolyte gating (EG), the shift in Raman peaks is correlated to a variation in surface eletron density. As far as the application to device is concerned, due to the actual state of the technology and material quality of InN, not suitable for working devices yet, the focus is directed to the applications of InAl(Ga)N/GaN HSs. Due to the advantages of a very thin barrier layer, compared to standard AlGaN/GaN technology, the use of this structure is suitable for high sensitivity applications being the 2DEG channel closer to the surface. In fact, pH sensitivity obtained is comparable to the state-of-the-art in terms of surface potential variations, and, due to the ultrathin barrier, the current variation with pH can be recorded with no need of the external reference electrode. Moreover, 2DEG photoconductive structures present a high photoconductive gain duemostly to the high electric field at the interface,and hence a high separation strength of photogenerated electron and hole. The use of Schottky metallizations (Schottky photodiode and metal-semiconductor-metal) reduce the dark current, compared to photoconduction, and the thin barrier helps to increase the extraction efficiency. Gain is obtained in all the device structures investigated. The devices, even if they present persistent photoconductivity (PPC), resulted faster than the standard PPC related decay values.

Fundamental finite key limits for information reconciliation in quantum key distribution

The security of quantum key distribution protocols is guaranteed by the laws of quantum mechanics. However, a precise analysis of the security properties requires tools from both classical cryptography and information theory. Here, we employ recent results in non-asymptotic classical information theory to show that information reconciliation imposes fundamental limitations on the amount of secret key that can be extracted in the finite key regime. In particular, we find that an often used approximation for the information leakage during one-way information reconciliation is flawed and we propose an improved estimate.

Influence of acrylic adhesive viscosity and surface roughness on the properties of adhesive joint

In adhesion, the wetting process depends on three fundamental factors: the surface topography of the adherend, the viscosity of the adhesive, and the surface energy of both. The aim of this paper is to study the influence of viscosity and surface roughness on the wetting and their effect on the bond strength. For this purpose, an acrylic adhesive with different viscosities was synthesized and some properties, such as viscosity and surface tension, were studied before adhesive curing took place. Furthermore, the contact angle and the lap-shear strength were analyzed using aluminum adherends with two different roughnesses. Scanning electron microscopy was used to determine the effect of the viscosity and the roughness on the joint interface. The results showed that the adhesive exhibits an optimal value of viscosity. Below this value, at low viscosities, the low neoprene content produces poor bond strength due to the reduced toughness of the adhesive. Additionally, it also produces a high shrinkage during curing, which leads to the apparition of residual stresses that weakens the interfacial strength. However, once the optimum value, an increase in the viscosity produces a negative effect on the joint strength as a result of an important decrease in the wettability.