3 resultados para ENCAPSULATED PD

em Universidad Politécnica de Madrid


Relevância:

20.00% 20.00%

Publicador:

Resumo:

The acoustic backscatter of encapsulated gas-filled microbubbles immersed in a weak compressible liquid and irradiated by ultrasound fields of moderate to high pressure amplitudes is investigated theoretically. The problem is formulated by considering, for the viscoelastic shell of finite thickness, an isotropic hyperelastic neo-Hookean model for the elastic contribution in addition to a Newtonian viscous component. First and second harmonic scattering cross-sections have been evaluated and the quantitative influence of the driving pressure amplitude on the harmonic resonance frequencies for different initial equilibrium bubble sizes and for different encapsulating physical properties has been determined. Conditions for optimal second harmonic imaging have been also investigated and some regions in the parameters space where the second harmonic intensity is dominant over the fundamental have been identified. Results have been obtained for albumin, lipid and polymer encapsulating shells, respectively.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

The dynamics of a gas-filled microbubble encapsulated by a viscoelastic fluid shell immersed in a Newtonian liquid and subject to an external pressure field is theoretically studied. The problem is formulated by considering a nonlinear Oldroyd type constitutive equation to model the rheological behavior of the fluid shell. Heat and mass transfer across the surface bubble have been neglected but radiation losses due to the compressibility of the surrounding liquid have been taken into account. Bubble collapse under sudden increase of the external pressure as well as nonlinear radial oscillations under ultrasound fields are investigated. The numerical results obtained show that the elasticity of the fluid coating intensifies oscillatory collapse and produces a strong increase of the amplitudes of radial oscillations which may become chaotic even for moderate driving pressure amplitudes. The role played by the elongational viscosity has also been analyzed and its influence on both, bubble collapse and radial oscillations, has been recognized. According to the theoretical predictions provided in the present work, a microbubble coated by a viscoelastic fluid shell is an oscillating system that, under acoustic driving, may experience volume oscillations of large amplitude, being, however, more stable than a free bubble. Thus, it could be expected that such a system may have a suitable behavior as an echogenic agent.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

The metallization stack Ti/Pd/Ag on n-type Si has been readily used in solar cells due to its low metal/semiconductor specific contact resistance, very high sheet conductance, bondability, long-term durability, and cost-effectiveness. In this study, the use of Ti/Pd/Ag metallization on n-type GaAs is examined, targeting electronic devices that need to handle high current densities and with grid-like contacts with limited surface coverage (i.e., solar cells, lasers, or light emitting diodes). Ti/Pd/Ag (50 nm/50 nm/1000 nm) metal layers were deposited on n-type GaAs by electron beam evaporation and the contact quality was assessed for different doping levels (from 1.3 × 1018 cm−3 to 1.6 × 1019 cm−3) and annealing temperatures (from 300°C to 750°C). The metal/semiconductor specific contact resistance, metal resistivity, and the morphology of the contacts were studied. The results show that samples doped in the range of 1018 cm−3 had Schottky-like I–V characteristics and only samples doped 1.6 × 1019 cm−3 exhibited ohmic behavior even before annealing. For the ohmic contacts, increasing annealing temperature causes a decrease in the specific contact resistance (ρ c,Ti/Pd/Ag ~ 5 × 10−4 Ω cm2). In regard to the metal resistivity, Ti/Pd/Ag metallization presents a very good metal conductivity for samples treated below 500°C (ρ M,Ti/Pd/Ag ~ 2.3 × 10−6 Ω cm); however, for samples treated at 750°C, metal resistivity is strongly degraded due to morphological degradation and contamination in the silver overlayer. As compared to the classic AuGe/Ni/Au metal system, the Ti/Pd/Ag system shows higher metal/semiconductor specific contact resistance and one order of magnitude lower metal resistivity.