Sub-bandgap spectral photo-response analysis of Ti supersaturated Si

We have analyzed the increase of the sheet conductance (ΔG□) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-metal transition limit show a remarkably high ΔG□, even higher than that measured in a silicon reference sample. This increase in the ΔG□ magnitude is contrary to the classic understanding of recombination centers action and supports the lifetime recovery predicted for concentrations of deep levels above the insulator-metal transition.

La construcción de las bóvedas góticas según Rodrigo Gil de Hontañón, arquitecto de la catedral de Segovia

Se ha escrito mucho sobre la construcción gótica. Sin embargo, hay un aspecto que apenas ha recibido atención: los procesos de ejecución de las bóvedas de crucería. La bóveda de crucería es una estructura compleja formada de arranques (enjarjes), trasdosado, nervios, claves y plementería. La forma y disposición de estos elementos varía mucho de un país a otro, de una época a otra e incluso dentro de la obra de un mismo autor. La construcción de una bóveda implicaba una serie de actividades que el maestro debía tener en cuenta durante el proyecto y la ejecución. El proyecto suponía, en primer lugar, decidir la traza (la planta) y la montea (la elevación). Además, era preciso elegir la dimensión de los nervios y de las claves para que estos elementos fueran labrados. Para su puesta en obra se precisaban andamios, cimbras, cerchas y grúas. Finalmente, la estructura de la bóveda y de su sistema de contrarresto debía estar en equilibrio en cada una de las etapas de la construcción, y esto imponía un cierto orden durante la ejecución así como determinaba los momentos para bajar las cimbras. En general, la información que se tiene sobre cada uno de los aspectos mencionados es muy escasa. Las únicas fuentes son los propios edificios y aquellos 108 S. Huerta documentos (tratados, trazas y condiciones) que han llegado hasta nosotros. Incluso disponiendo de fuentes queda el problema de la interpretación. La comprensión del proceso de ejecución implica considerar todos los aspectos antes citados. En general, los distintos autores se han centrado en un aspecto u otro, muchas veces dependiendo de la información disponible. Las bóvedas de la catedral de Segovia, proyectadas y construidas por Rodrigo Gil de Hontañón, constituyen un caso único por la abundancia de la documentación disponible. En el archivo de la catedral se conservan las trazas originales pero, sobre todo, están las condiciones para la ejecución de las capillas de la girola. Por otra parte, ha llegado hasta nosotros una copia del tratado de arquitectura escrito por Rodrigo Gil de Hontañón. En lo que sigue se intentará, utilizando la información citada, realizar una descripción de los procesos de proyecto y ejecución seguidos por Rodrigo Gil. En primer lugar se describirá el contenido del tratado y de las condiciones, tratando los diferentes aspectos a medida que aparecen. En cada apartado, se añadirán comentarios o se discutirá su contenido. Estos comentarios irán en letra más pequeña. Las citas se han reducido al mínimo y las obras citadas se recogen al final con algunos otros trabajos fundamentales que guiarán al lector interesado a la literatura relevante sobre el tema.

Improving shortest paths in the Delaunay triangulation

We study a problem about shortest paths in Delaunay triangulations. Given two nodes s; t in the Delaunay triangulation of a point set P, we look for a new point p that can be added, such that the shortest path from s to t in the Delaunay triangulation of P u{p} improves as much as possible. We study properties of the problem and give efficient algorithms to find such a point when the graph-distance used is Euclidean and for the link-distance. Several other variations of the problem are also discussed.

Study of the Electrical Behavior in Intermediate Band-Si Junctions

In this study we analyze the electrical behavior of a junction formed by an ultraheavily Ti implanted Si layer processed by a Pulsed Laser Melting (PLM) and the non implanted Si substrate. This electrical behavior exhibits an electrical decoupling effect in this bilayer that we have associated to an Intermediate Band (IB) formation in the Ti supersaturated Si layer. Time-of-flight secondary ion mass spectrometry (ToFSIMS) measurements show a Ti depth profile with concentrations well above the theoretical limit required to the IB formation. Sheet resistance and Hall mobility measurements in the van der Pauw configuration of these bilayers exhibit a clear dependence with the different measurement currents introduced (1menor queA-1mA). We find that the electrical transport properties measured present an electrical decoupling effect in the bilayer as function of the temperature. The dependence of this effect with the injected current could be explained in terms of an additional current flow in the junction from the substrate to the IB layer and in terms of the voltage dependence in the junction with the measurement current.

Mejoras del hábitat truchero del Río Noguera de Tort (La Vall de Boi, Lleida)

En el articulo se describe las obras realizadas en la cola del embalse de presa hidroelectrica de barrera para mejorar el habitat y obtener un aumento de población de la trucha común. Las obras fueron de dos tipos, una primera consistente en la introducción de grandes piedras para crear refugios a la trucha y la segunda consistió en la abertura de mangas y brazos del río para irrigar lagunas y mejorar las condiciones del agua.

Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application.

Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells

Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.

The intermediate band approach in the third solar cell generation context

Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.

Electrical decoupling effect on intermediate band Ti-implanted silicon layers

We investigated the electrical transport properties of ultraheavily Ti-implanted silicon layers subsequently pulsed laser melted (PLM). After PLM, the samples exhibit anomalous electrical behaviour in sheet resistance and Hall mobility measurements, which is associated with the formation of an intermediate band (IB) in the implanted layer. An analytical model that assumes IB formation and a current limitation effect between the implanted layer and the substrate was developed to analyse this anomalous behaviour. This model also describes the behaviour of the function V/Delta V and the electrical function F that can be extracted from the electrical measurements in the bilayer. After chemical etching of the implanted layer, the anomalous electrical behaviour observed in sheet resistance and Hall mobility measurements vanishes, recovering the unimplanted Si behaviour, in agreement with the analytical model. The behaviour of V/Delta V and the electrical function F can also be successfully described in terms of the analytical model in the bilayer structure with the implanted layer entirely stripped.

Células solares de banda intermedia

Las células solares de banda intermedia se inventaron en España. Constituyen una propuesta para aumentar la eficiencia de las células solares por encima del límite de Shockley y Queisser para células de un solo gap. El número de ideas para llevarlas a la práctica (desde la utilización de puntos cuánticos a la implantación selectiva de impurezas) se ha ido expandiendo a medida que nuestra comprensión ha ido aumentando. En este artículo repasamos el concepto de célula solar de banda intermedia y algunas de estas ideas para llevarla a la práctica.

Far infrared photoconductivity in a silicon based material: vanadium supersaturated silicon

We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) at different doses and subsequently processed by pulsed-laser melting. Samples with V concentration clearly above the insulator-metal transition limit show an important increase of the photoresponse with respect to a Si reference sample. Their photoresponse extends into the far infrared region and presents a sharp photoconductivity edge that moves towards lower photon energies as the temperature decreases. The increase of the value of the photoresponse is contrary to the classic understanding of recombination centers action and supports the predictions of the insulator-metal transition theory.

Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

In this study, we present a structural and optoelectronic characterization of high dose Ti implanted Si subsequently pulsed-laser melted (Ti supersaturated Si). Time-of-flight secondary ion mass spectrometry analysis reveals that the theoretical Mott limit has been surpassed after the laser process and transmission electron microscopy images show a good lattice reconstruction. Optical characterization shows strong sub-band gap absorption related to the high Ti concentration. Photoconductivity measurements show that Ti supersaturated Si presents spectral response orders of magnitude higher than unimplanted Si at energies below the band gap. We conclude that the observed below band gap photoconductivity cannot be attributed to structural defects produced by the fabrication processes and suggest that both absorption coefficient of the new material and lifetime of photoexcited carriers have been enhanced due to the presence of a high Ti concentration. This remarkable result proves that Ti supersaturated Si is a promising material for both infrared detectors and high efficiency photovoltaic devices.

The Gothic Ribbed vaults in Rodrigo Gil de Hontañón

The Gothic Ribbed vaults in Rodrigo Gil de Hontañón. Second International Congress on Construction History. Construction History Society. Cambridge. Reino Unido. Vol: III. Pags: 2415-2431. ISBN. 0-7017-0205-2

Double ion implantation and pulsed laser melting processes for third generation solar cells

In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 104 cm−1 in the photons energy range from 1.1 to 0.6 eV.

Towards a new generation of solar cells: silicon supersaturated with titanium or vanadium

We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) and titanium (Ti) at different doses and subsequently processed by pulsed-laser melting.