2 resultados para CVD growth

em Universidad Politécnica de Madrid


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This work aims at a deeper understanding of the energy loss phenomenon in polysilicon production reactors by the so-called Siemens process. Contributions to the energy consumption of the polysilicon deposition step are studied in this paper, focusing on the radiation heat loss phenomenon. A theoretical model for radiation heat loss calculations is experimentally validated with the help of a laboratory CVD prototype. Following the results of the model, relevant parameters that directly affect the amount of radiation heat losses are put forward. Numerical results of the model applied to a state-of-the-art industrial reactor show the influence of these parameters on energy consumption due to radiation per kilogram of silicon produced; the radiation heat loss can be reduced by 3.8% when the reactor inner wall radius is reduced from 0.78 to 0.70 m, by 25% when the wall emissivity is reduced from 0.5 to 0.3, and by 12% when the final rod diameter is increased from 12 to 15 cm.

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This work addresses heat losses in a CVD reactor for polysilicon production. Contributions to the energy consumption of the so-called Siemens process are evaluated, and a comprehensive model for heat loss is presented. A previously-developed model for radiative heat loss is combined with conductive heat loss theory and a new model for convective heat loss. Theoretical calculations are developed and theoretical energy consumption of the polysilicon deposition process is obtained. The model is validated by comparison with experimental results obtained using a laboratory-scale CVD reactor. Finally, the model is used to calculate heat consumption in a 36-rod industrial reactor; the energy consumption due to convective heat loss per kilogram of polysilicon produced is calculated to be 22-30 kWh/kg along a deposition process.