Radiation heat savings in polysilicon production: validation of results through a CVD laboratory prototype
Data(s) |
01/07/2013
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Resumo |
This work aims at a deeper understanding of the energy loss phenomenon in polysilicon production reactors by the so-called Siemens process. Contributions to the energy consumption of the polysilicon deposition step are studied in this paper, focusing on the radiation heat loss phenomenon. A theoretical model for radiation heat loss calculations is experimentally validated with the help of a laboratory CVD prototype. Following the results of the model, relevant parameters that directly affect the amount of radiation heat losses are put forward. Numerical results of the model applied to a state-of-the-art industrial reactor show the influence of these parameters on energy consumption due to radiation per kilogram of silicon produced; the radiation heat loss can be reduced by 3.8% when the reactor inner wall radius is reduced from 0.78 to 0.70 m, by 25% when the wall emissivity is reduced from 0.5 to 0.3, and by 12% when the final rod diameter is increased from 12 to 15 cm. |
Formato |
application/pdf |
Identificador | |
Idioma(s) |
eng |
Relação |
http://oa.upm.es/26089/1/INVE_MEM_2013_162591.pdf http://www.sciencedirect.com/science/article/pii/S0022024813002327 info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jcrysgro.2013.03.043 |
Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
Fonte |
Journal of Crystal Growth, ISSN 0022-0248, 2013-07, Vol. 374 |
Palavras-Chave | #Electrónica |
Tipo |
info:eu-repo/semantics/article Artículo PeerReviewed |