Enhanced iron gettering by short, optimized low-temperature annealing after phosphorus emitter diffusion for industrial silicon solar cell processing

The introduction of a low-temperature (LT) tail after P emitter diffusion was shown to lead to considerable improvements in electron lifetime and solar cell performance by different researchers. So far, the drawback of the investigated extended gettering treatments has been the lack of knowledge about optimum annealing times and temperatures and the important increase in processing time. In this manuscript, we calculate optimum annealing temperatures of Fe-contaminated Si wafers for different annealing durations. Subsequently, it is shown theoretically and experimentally that a relatively short LT tail of 15 min can lead to a significant reduction of interstitial Fe and an increase in electron lifetime. Finally, we calculate the potential improvement of solar cell efficiency when such a short-tail extended P diffusion gettering is included in an industrial fabrication process.

Acoustic properties of microperforated panels and their optimizatión by simulated annealing

This thesis investigates the acoustic properties of microperforated panels as an alternative to passive noise control. The first chapters are devoted to the review of analytical models to obtain the acoustic impedance and absorption coefficient of perforated panels. The use of panels perforated with circular holes or with slits is discussed. The theoretical models are presented and some modifications are proposed to improve the modeling of the physical phenomena occurring at the perforations of the panels. The absorption band is widened through the use of multiple layer microperforated panels and/or the combination of a millimetric panel with a porous layer that can be a fibrous material or a nylon mesh. A commercial micrometric mesh downstream a millimetric panel is proposed as a very efficient and low cost solution for controlling noise in reduced spaces. The simulated annealing algorithm is used in order to optimize the panel construction to provide a maximum of absorption in a determined wide band frequency range. Experiments are carried out at normal sound incidence and plane waves. One example is shown for a double layer microperforated panel subjected to grazing flow. A good agreement is achieved between the theory and the experiments. RESUMEN En esta tesis se investigan las propiedades acústicas de paneles micro perforados como una alternativa al control pasivo del ruido. Los primeros capítulos están dedicados a la revisión de los modelos de análisis para obtener la impedancia acústica y el coeficiente de absorción de los paneles perforados. El uso de paneles perforados con agujeros circulares o con ranuras es discutido. Se presentan diferentes modelos y se proponen algunas modificaciones para mejorar la modelización de los fenómenos físicos que ocurren en las perforaciones. La banda de absorción se ensancha a través del uso de capas múltiples de paneles micro perforados y/o la combinación de un panel de perforaciones milimétricas combinado con una capa porosa que puede ser un material fibroso o una malla de nylon. Se propone el uso de una malla micrométrica detrás de un panel milimétrico como una solución económica y eficiente para el control del ruido en espacios reducidos. El algoritmo de recocido simulado se utiliza con el fin de optimizar la construcción de paneles micro perforados para proporcionar un máximo de absorción en una banda determinada frecuencias. Los experimentos se llevan a cabo en la incidencia normal de sonido y ondas planas. Se muestra un ejemplo de panel micro perforado de doble capa sometido a flujo rasante. Se consigue un buen acuerdo entre la teoría y los experimentos.

High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∼20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction overlap, the type-II samples are more efficient than the type-I counterparts in terms of luminescence, showing a great potential for device applications. Strain-driven In-Ga intermixing during annealing is found to modify the QD shape and composition, while As-Sb exchange is inhibited, allowing to keep the type-II structure. Sb is only redistributed within the capping layer giving rise to a more homogeneous composition.

Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: effect of thermal annealing

ZnCdO nanowires with up to 45% Cd are demonstrated showing room temperature photoluminescence (PL) down to 2.02 eV and a radiative efficiency similar to that of ZnO nanowires. Analysis of the microstructure in individual nanowires confirms the presence of a single wurtzite phase even at the highest Cd contents, with a homogeneous distribution of Cd both in the longitudinal and transverse directions. Thermal annealing at 550 °C yields an overall improvement of the PL, which is blue-shifted as a result of the homogeneous decrease of Cd throughout the nanowire, but the single wurtzite structure is fully maintained.