Ampliación del puente de Son Espases. Palma de Mallorca (I. Baleares)

El proyecto “Nuevo Puente de Son Espases” describe una obra completa en el sentido exigido en el artículo 125 del Reglamento General de la Ley de Contratos de las Administraciones Públicas. Este proyecto describe una solución viaria para reducir sensiblemente los problemas de saturación de tránsito en el nudo entre la carretera de Valldemossa-Universidad (Ma-1110) y el Camí dels Reis. La obra consiste en la construcción de un viaducto que permite la continuidad de la carretera de Valldemossa-Universidad (Ma-1110) sin interrupción en la rotonda del nudo. Esto permitirá habilitar un acceso muy consistente al nuevo hospital de Son Espases y disminuir el tráfico provocado por la aparición del segundo cinturón de la ciudad. El proyecto se ha redactado en función de criterios y normativa técnica vigente, y de las indicaciones del promotor, el Consell de Mallorca,a disposición del cual se pone por si considera conveniente continuar su tramitación.

Double ion implantation and pulsed laser melting processes for third generation solar cells

In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 104 cm−1 in the photons energy range from 1.1 to 0.6 eV.

Characterization of the manufacturing processes to grow triple-junction solar cells

A number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper. The opportunity for successfully applying the combination of reflectance and reflectance anisotropy spectroscopy in situ methods for investigating III-V structure growth on a Ge substrate has been demonstrated. Photovoltaic properties of the III-V/Ge narrow-band subcell of the triple-junction solar cells have been investigated. It has been shown that there are excess currents in the Ge photovoltaic p-n junctions, and they have the tunneling or thermotunneling character. The values of the diode parameters for these current flow mechanisms have been determined. The potential barrier at the III-V/Ge interface was determined and the origin of this barrier formation during MOVPE heterogrowth was suggested.