Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650 °C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding white emission

Micropillar compression of LiF [111] single crystals: effect of size, ion irradiation and misorientation

The mechanical response under compression of LiF single crystal micropillars oriented in the [111] direction was studied. Micropillars of different diameter (in the range 1–5 lm) were obtained by etching the matrix in directionally-solidified NaCl–LiF and KCl–LiF eutectic compounds. Selected micropillars were exposed to high-energy Ga+ ions to ascertain the effect of ion irradiation on the mechanical response. Ion irradiation led to an increase of approximately 30% in the yield strength and the maximum compressive strength but no effect of the micropillar diameter on flow stress was found in either the as-grown or the ion irradiated pillars. The dominant deformation micromechanisms were analyzed by means of crystal plasticity finite element simulations of the compression test, which explained the strong effect of micropillar misorientation on the mechanical response. Finally, the lack of size effect on the flow stress was discussed to the light of previous studies in LiF and other materials which show high lattice resistance to dislocation motion.

Estudio de la anisotropía de una fuente de Am-Be de 111 GBq

Se ha estudiado la anisotropía de una fuente de Am-Be de 111 GBq (3Ci) mediante el uso de un pequeño motor que permite girar paso a paso la fuente situada en su posición de irradiación habitual. Las medidas se han realizado con un contador proporcional de 3He alojado en el interior de una esfera moderadora de 8” correspondiente a un sistema de espectrometría de esferas Bonner. Se reportan los resultados obtenidos y el factor de anisotropía determinado para esta fuente.

Viaducto para la mejora del trazado de la N-403 Toledo-Ávila, entre el pk. 111+050 y el pk. 111+450, término municipal de San Juan de la Nava (Ávila)

Las actuaciones que se definen en el presente Proyecto de Construcción consisten en una mejora de trazado de la actual N-403 Toledo-Ávila, mediante la construcción de un viaducto que une los puntos kilométricos 111+050 y 111+450 de dicha carretera, en el término municipal de San Juan de la Nava (Ávila). Esta mejora de trazado nace de la necesidad de aumentar la seguridad de un tramo con unas estadísticas de accidentalidad y mortalidad superiores a las del resto de la N- 403. Esos altos índices de accidentalidad no se pueden achacar al estado del pavimento ni a posibles desprendimientos de los taludes excavados, sino que se deben a la escasa visibilidad que se produce en ambos puntos kilométricos arriba señalados, en los cuales hay curvas cerradas con visibilidad reducida debido a que los taludes de las márgenes son prácticamente verticales, al estar éstos excavados en granito, que permite tales ángulos. A esto hay que sumar que la carretera existente es de tipo convencional, con una sola calzada y un carril por sentido, de manera que el riesgo de choque frontal en dichos puntos es elevado. Para resolver esta problemática, la Administración impone mejorar el actual trazado con otro recto que salva aquellos puntos kilométricos mediante un viaducto.

XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire

The International Workshop on Nitride Semiconductors (IWN) is a biennial academic conference in the field of group III nitride research. The IWN and the International Conference on Nitride Semiconductors (ICNS) are held in alternating years and cover similar subject areas.

Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In0.73Ga0.27N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 109 cm−2. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.

Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate

Transmission electron microscopy and spatially resolved electron energy-loss spectroscopy have been applied to investigate the indium distribution and the interface morphology in axial (In,Ga)N/GaN nanowire heterostructures. The ordered axial (In,Ga)N/GaN nanowire heterostructures with an indium concentration up to 80% are grown by molecular beam epitaxy on GaN-buffered Si(111) substrates. We observed a pronounced lattice pulling effect in all the nanowire samples given in a broad transition region at the interface. The lattice pulling effect becomes smaller and the (In,Ga)N/GaN interface width is reduced as the indium concentration is increased in the (In,Ga)N section. The result can be interpreted in terms of the increased plastic strain relaxation via the generation of the misfit dislocations at the interface.

Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111)

Pronounced electrocatalytic oxidation enhancement at the surface of InGaN layers and nanostructures directly grown on Si by plasma-assisted molecular beam epitaxy is demonstrated. The oxidation enhancement, probed with the ferro/ferricyanide redox couple increases with In content and proximity of nanostructure surfaces and sidewalls to the c-plane. This is attributed to the corresponding increase of the density of intrinsic positively charged surface donors promoting electron transfer. Strongest enhancement is for c-plane InGaN layers functionalized with InN quantum dots (QDs). These results explain the excellent performance of our InN/InGaN QD biosensors and water splitting electrodes for further boosting efficiency.