XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire

Autoria(s): Gómez Hernández, Víctor Jesús; Gacevic, Zarko; Aseev, Pavel; Soto Rodríguez, Paul; Kumar, Praveen; Calleja Pardo, Enrique; Nötzel, Richard; Sánchez García, Miguel Ángel
Data(s)

2014
Resumo

The International Workshop on Nitride Semiconductors (IWN) is a biennial academic conference in the field of group III nitride research. The IWN and the International Conference on Nitride Semiconductors (ICNS) are held in alternating years and cover similar subject areas.
Formato

application/pdf
Identificador

http://oa.upm.es/38905/
Idioma(s)

eng
Publicador

E.T.S.I. Telecomunicación (UPM)
Relação

http://oa.upm.es/38905/1/INVE_MEM_2014_204162.pdf

MAT2011-26703
Direitos

http://creativecommons.org/licenses/by-nc-nd/3.0/es/

info:eu-repo/semantics/openAccess
Fonte

International Workshop on Nitride Semiconductors (IWN2014) | International Workshop on Nitride Semiconductors (IWN2014) | 24/08/2014 - 29/08/2014 | Wroclaw, Poland
Palavras-Chave #Electrónica
Tipo

info:eu-repo/semantics/conferenceObject

Ponencia en Congreso o Jornada

PeerReviewed
Acesso ao item digital