Performance Analysis of 10,000 Residential PV Systems in France and Belgium

The main objective of this paper is to review the state of the art of residential PV systems in France and Belgium. This is done analyzing the operational data of 10650 PV systems (9657 located in France and 993 in Belgium). Three main questions are posed. How much energy do they produce? What level of performance is associated to their production? Which are the key parameters that most influence their quality? During the year 2010, the PV systems in France have produced a mean annual energy of 1163 kWh/kWp in France and 852 kWh/kWp in Belgium. As a whole, the orientation of PV generators causes energy productions to be some 7% inferior to optimally oriented PV systems. The mean Performance Ratio is 76% in France and 78% in Belgium, and the mean Performance Index is 85% in both countries. On average, the real power of the PV modules falls 4.9% below its corresponding nominal power announced on the manufacturer?s datasheet. A brief analysis by PV modules technology has lead to relevant observations about two technologies in particular. On the one hand, the PV systems equipped with Heterojunction with Intrinsic. Thin layer (HIT) modules show performances higher than average. On the other hand, the systems equipped with Copper Indium (di)Selenide (CIS) modules show a real power that is 16 % lower than their nominal value.

Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3ìm operation

The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertical cavity semiconductor optical amplifier (VCSOA) is a modified version of a HELLISH-VCSOA device. It has a shorter p-channel and longer n-channel. The device studied in this work consists of a simple GaAs p-i-n junction, containing 11 Ga0.35In0.65 N0.02As0.08/GaAs multiple quantum wells in its intrinsic region; the active region is enclosed between six pairs of GaAs/AlAs top distributed Bragg reflector (DBR) mirrors and 20.5 pairs of AlAs/GaAs bottom DBR mirrors. The operation of the device is based on longitudinal current transport parallel to the layers of the GaAs p-n junction. The device is characterised through I-V-L and by spectral photoluminescence, electroluminescence and electro-photoluminescence measurements. An amplification of about 25 dB is observed at applied voltages of around V = 88 V.