MOVPE growth of III-V semiconductors on silicon for third generation solar cells

Esta Tesis trata sobre el desarrollo y crecimiento -mediante tecnología MOVPE (del inglés: MetalOrganic Vapor Phase Epitaxy)- de células solares híbridas de semiconductores III-V sobre substratos de silicio. Esta integración pretende ofrecer una alternativa a las células actuales de III-V, que, si bien ostentan el récord de eficiencia en dispositivos fotovoltaicos, su coste es, a día de hoy, demasiado elevado para ser económicamente competitivo frente a las células convencionales de silicio. De este modo, este proyecto trata de conjugar el potencial de alta eficiencia ya demostrado por los semiconductores III-V en arquitecturas de células fotovoltaicas multiunión con el bajo coste, la disponibilidad y la abundancia del silicio. La integración de semiconductores III-V sobre substratos de silicio puede afrontarse a través de diferentes aproximaciones. En esta Tesis se ha optado por el desarrollo de células solares metamórficas de doble unión de GaAsP/Si. Mediante esta técnica, la transición entre los parámetros de red de ambos materiales se consigue por medio de la formación de defectos cristalográficos (mayoritariamente dislocaciones). La idea es confinar estos defectos durante el crecimiento de sucesivas capas graduales en composición para que la superficie final tenga, por un lado, una buena calidad estructural, y por otro, un parámetro de red adecuado. Numerosos grupos de investigación han dirigido sus esfuerzos en los últimos años en desarrollar una estructura similar a la que aquí proponemos. La mayoría de éstos se han centrado en entender los retos asociados al crecimiento de materiales III-V, con el fin de conseguir un material de alta calidad cristalográfica. Sin embargo, prácticamente ninguno de estos grupos ha prestado especial atención al desarrollo y optimización de la célula inferior de silicio, cuyo papel va a ser de gran relevancia en el funcionamiento de la célula completa. De esta forma, y con el fin de completar el trabajo hecho hasta el momento en el desarrollo de células de III-V sobre silicio, la presente Tesis se centra, fundamentalmente, en el diseño y optimización de la célula inferior de silicio, para extraer su máximo potencial. Este trabajo se ha estructurado en seis capítulos, ordenados de acuerdo al desarrollo natural de la célula inferior. Tras un capítulo de introducción al crecimiento de semiconductores III-V sobre Si, en el que se describen las diferentes alternativas para su integración; nos ocupamos de la parte experimental, comenzando con una extensa descripción y caracterización de los substratos de silicio. De este modo, en el Capítulo 2 se analizan con exhaustividad los diferentes tratamientos (tanto químicos como térmicos) que deben seguir éstos para garantizar una superficie óptima sobre la que crecer epitaxialmente el resto de la estructura. Ya centrados en el diseño de la célula inferior, el Capítulo 3 aborda la formación de la unión p-n. En primer lugar se analiza qué configuración de emisor (en términos de dopaje y espesor) es la más adecuada para sacar el máximo rendimiento de la célula inferior. En este primer estudio se compara entre las diferentes alternativas existentes para la creación del emisor, evaluando las ventajas e inconvenientes que cada aproximación ofrece frente al resto. Tras ello, se presenta un modelo teórico capaz de simular el proceso de difusión de fosforo en silicio en un entorno MOVPE por medio del software Silvaco. Mediante este modelo teórico podemos determinar qué condiciones experimentales son necesarias para conseguir un emisor con el diseño seleccionado. Finalmente, estos modelos serán validados y constatados experimentalmente mediante la caracterización por técnicas analíticas (i.e. ECV o SIMS) de uniones p-n con emisores difundidos. Uno de los principales problemas asociados a la formación del emisor por difusión de fósforo, es la degradación superficial del substrato como consecuencia de su exposición a grandes concentraciones de fosfina (fuente de fósforo). En efecto, la rugosidad del silicio debe ser minuciosamente controlada, puesto que éste servirá de base para el posterior crecimiento epitaxial y por tanto debe presentar una superficie prístina para evitar una degradación morfológica y cristalográfica de las capas superiores. En este sentido, el Capítulo 4 incluye un análisis exhaustivo sobre la degradación morfológica de los substratos de silicio durante la formación del emisor. Además, se proponen diferentes alternativas para la recuperación de la superficie con el fin de conseguir rugosidades sub-nanométricas, que no comprometan la calidad del crecimiento epitaxial. Finalmente, a través de desarrollos teóricos, se establecerá una correlación entre la degradación morfológica (observada experimentalmente) con el perfil de difusión del fósforo en el silicio y por tanto, con las características del emisor. Una vez concluida la formación de la unión p-n propiamente dicha, se abordan los problemas relacionados con el crecimiento de la capa de nucleación de GaP. Por un lado, esta capa será la encargada de pasivar la subcélula de silicio, por lo que su crecimiento debe ser regular y homogéneo para que la superficie de silicio quede totalmente pasivada, de tal forma que la velocidad de recombinación superficial en la interfaz GaP/Si sea mínima. Por otro lado, su crecimiento debe ser tal que minimice la aparición de los defectos típicos de una heteroepitaxia de una capa polar sobre un substrato no polar -denominados dominios de antifase-. En el Capítulo 5 se exploran diferentes rutinas de nucleación, dentro del gran abanico de posibilidades existentes, para conseguir una capa de GaP con una buena calidad morfológica y estructural, que será analizada mediante diversas técnicas de caracterización microscópicas. La última parte de esta Tesis está dedicada al estudio de las propiedades fotovoltaicas de la célula inferior. En ella se analiza la evolución de los tiempos de vida de portadores minoritarios de la base durante dos etapas claves en el desarrollo de la estructura Ill-V/Si: la formación de la célula inferior y el crecimiento de las capas III-V. Este estudio se ha llevado a cabo en colaboración con la Universidad de Ohio, que cuentan con una gran experiencia en el crecimiento de materiales III-V sobre silicio. Esta tesis concluye destacando las conclusiones globales del trabajo realizado y proponiendo diversas líneas de trabajo a emprender en el futuro. ABSTRACT This thesis pursues the development and growth of hybrid solar cells -through Metal Organic Vapor Phase Epitaxy (MOVPE)- formed by III-V semiconductors on silicon substrates. This integration aims to provide an alternative to current III-V cells, which, despite hold the efficiency record for photovoltaic devices, their cost is, today, too high to be economically competitive to conventional silicon cells. Accordingly, the target of this project is to link the already demonstrated efficiency potential of III-V semiconductor multijunction solar cell architectures with the low cost and unconstrained availability of silicon substrates. Within the existing alternatives for the integration of III-V semiconductors on silicon substrates, this thesis is based on the metamorphic approach for the development of GaAsP/Si dual-junction solar cells. In this approach, the accommodation of the lattice mismatch is handle through the appearance of crystallographic defects (namely dislocations), which will be confined through the incorporation of a graded buffer layer. The resulting surface will have, on the one hand a good structural quality; and on the other hand the desired lattice parameter. Different research groups have been working in the last years in a structure similar to the one here described, being most of their efforts directed towards the optimization of the heteroepitaxial growth of III-V compounds on Si, with the primary goal of minimizing the appearance of crystal defects. However, none of these groups has paid much attention to the development and optimization of the bottom silicon cell, which, indeed, will play an important role on the overall solar cell performance. In this respect, the idea of this thesis is to complete the work done so far in this field by focusing on the design and optimization of the bottom silicon cell, to harness its efficiency. This work is divided into six chapters, organized according to the natural progress of the bottom cell development. After a brief introduction to the growth of III-V semiconductors on Si substrates, pointing out the different alternatives for their integration; we move to the experimental part, which is initiated by an extensive description and characterization of silicon substrates -the base of the III-V structure-. In this chapter, a comprehensive analysis of the different treatments (chemical and thermal) required for preparing silicon surfaces for subsequent epitaxial growth is presented. Next step on the development of the bottom cell is the formation of the p-n junction itself, which is faced in Chapter 3. Firstly, the optimization of the emitter configuration (in terms of doping and thickness) is handling by analytic models. This study includes a comparison between the different alternatives for the emitter formation, evaluating the advantages and disadvantages of each approach. After the theoretical design of the emitter, it is defined (through the modeling of the P-in-Si diffusion process) a practical parameter space for the experimental implementation of this emitter configuration. The characterization of these emitters through different analytical tools (i.e. ECV or SIMS) will validate and provide experimental support for the theoretical models. A side effect of the formation of the emitter by P diffusion is the roughening of the Si surface. Accordingly, once the p-n junction is formed, it is necessary to ensure that the Si surface is smooth enough and clean for subsequent phases. Indeed, the roughness of the Si must be carefully controlled since it will be the basis for the epitaxial growth. Accordingly, after quantifying (experimentally and by theoretical models) the impact of the phosphorus on the silicon surface morphology, different alternatives for the recovery of the surface are proposed in order to achieve a sub-nanometer roughness which does not endanger the quality of the incoming III-V layers. Moving a step further in the development of the Ill-V/Si structure implies to address the challenges associated to the GaP on Si nucleation. On the one hand, this layer will provide surface passivation to the emitter. In this sense, the growth of the III-V layer must be homogeneous and continuous so the Si emitter gets fully passivated, providing a minimal surface recombination velocity at the interface. On the other hand, the growth should be such that the appearance of typical defects related to the growth of a polar layer on a non-polar substrate is minimized. Chapter 5 includes an exhaustive study of the GaP on Si nucleation process, exploring different nucleation routines for achieving a high morphological and structural quality, which will be characterized by means of different microscopy techniques. Finally, an extensive study of the photovoltaic properties of the bottom cell and its evolution during key phases in the fabrication of a MOCVD-grown III-V-on-Si epitaxial structure (i.e. the formation of the bottom cell; and the growth of III-V layers) will be presented in the last part of this thesis. This study was conducted in collaboration with The Ohio State University, who has extensive experience in the growth of III-V materials on silicon. This thesis concludes by highlighting the overall conclusions of the presented work and proposing different lines of work to be undertaken in the future.

Advanced background modeling with RGB-D sensors through classifiers combination and inter-frame foreground prediction

An innovative background modeling technique that is able to accurately segment foreground regions in RGB-D imagery (RGB plus depth) has been presented in this paper. The technique is based on a Bayesian framework that efficiently fuses different sources of information to segment the foreground. In particular, the final segmentation is obtained by considering a prediction of the foreground regions, carried out by a novel Bayesian Network with a depth-based dynamic model, and, by considering two independent depth and color-based mixture of Gaussians background models. The efficient Bayesian combination of all these data reduces the noise and uncertainties introduced by the color and depth features and the corresponding models. As a result, more compact segmentations, and refined foreground object silhouettes are obtained. Experimental results with different databases suggest that the proposed technique outperforms existing state-of-the-art algorithms.

Joint 4-D variational stereo reconstruction and camera calibration refinement for oceanic sea state measurements

Validating modern oceanographic theories using models produced through stereo computer vision principles has recently emerged. Space-time (4-D) models of the ocean surface may be generated by stacking a series of 3-D reconstructions independently generated for each time instant or, in a more robust manner, by simultaneously processing several snapshots coherently in a true ?4-D reconstruction.? However, the accuracy of these computer-vision-generated models is subject to the estimations of camera parameters, which may be corrupted under the influence of natural factors such as wind and vibrations. Therefore, removing the unpredictable errors of the camera parameters is necessary for an accurate reconstruction. In this paper, we propose a novel algorithm that can jointly perform a 4-D reconstruction as well as correct the camera parameter errors introduced by external factors. The technique is founded upon variational optimization methods to benefit from their numerous advantages: continuity of the estimated surface in space and time, robustness, and accuracy. The performance of the proposed algorithm is tested using synthetic data produced through computer graphics techniques, based on which the errors of the camera parameters arising from natural factors can be simulated.

Atomistic modeling of Ge damage accumulation, amorphization and solid phase epitaxial regrowth

En los últimos años, el Ge ha ganado de nuevo atención con la finalidad de ser integrado en el seno de las existentes tecnologías de microelectrónica. Aunque no se le considera como un canddato capaz de reemplazar completamente al Si en el futuro próximo, probalemente servirá como un excelente complemento para aumentar las propiedades eléctricas en dispositivos futuros, especialmente debido a su alta movilidad de portadores. Esta integración requiere de un avance significativo del estado del arte en los procesos de fabricado. Técnicas de simulación, como los algoritmos de Monte Carlo cinético (KMC), proporcionan un ambiente atractivo para llevar a cabo investigación y desarrollo en este campo, especialmente en términos de costes en tiempo y financiación. En este estudio se han usado, por primera vez, técnicas de KMC con el fin entender el procesado “front-end” de Ge en su fabricación, específicamente la acumulación de dañado y amorfización producidas por implantación iónica y el crecimiento epitaxial en fase sólida (SPER) de las capas amorfizadas. Primero, simulaciones de aproximación de clisiones binarias (BCA) son usadas para calcular el dañado causado por cada ión. La evolución de este dañado en el tiempo se simula usando KMC sin red, o de objetos (OKMC) en el que sólamente se consideran los defectos. El SPER se simula a través de una aproximación KMC de red (LKMC), siendo capaz de seguir la evolución de los átomos de la red que forman la intercara amorfo/cristalina. Con el modelo de amorfización desarrollado a lo largo de este trabajo, implementado en un simulador multi-material, se pueden simular todos estos procesos. Ha sido posible entender la acumulación de dañado, desde la generación de defectos puntuales hasta la formación completa de capas amorfas. Esta acumulación ocurre en tres regímenes bien diferenciados, empezando con un ritmo lento de formación de regiones de dañado, seguido por una rápida relajación local de ciertas áreas en la fase amorfa donde ambas fases, amorfa y cristalina, coexisten, para terminar en la amorfización completa de capas extensas, donde satura el ritmo de acumulación. Dicha transición ocurre cuando la concentración de dañado supera cierto valor límite, el cual es independiente de las condiciones de implantación. Cuando se implantan los iones a temperaturas relativamente altas, el recocido dinámico cura el dañado previamente introducido y se establece una competición entre la generación de dañado y su disolución. Estos efectos se vuelven especialmente importantes para iones ligeros, como el B, el cual crea dañado más diluido, pequeño y distribuido de manera diferente que el causado por la implantación de iones más pesados, como el Ge. Esta descripción reproduce satisfactoriamente la cantidad de dañado y la extensión de las capas amorfas causadas por implantación iónica reportadas en la bibliografía. La velocidad de recristalización de la muestra previamente amorfizada depende fuertemente de la orientación del sustrato. El modelo LKMC presentado ha sido capaz de explicar estas diferencias entre orientaciones a través de un simple modelo, dominado por una única energía de activación y diferentes prefactores en las frecuencias de SPER dependiendo de las configuraciones de vecinos de los átomos que recristalizan. La formación de maclas aparece como una consecuencia de esta descripción, y es predominante en sustratos crecidos en la orientación (111)Ge. Este modelo es capaz de reproducir resultados experimentales para diferentes orientaciones, temperaturas y tiempos de evolución de la intercara amorfo/cristalina reportados por diferentes autores. Las parametrizaciones preliminares realizadas de los tensores de activación de tensiones son también capaces de proveer una buena correlación entre las simulaciones y los resultados experimentales de velocidad de SPER a diferentes temperaturas bajo una presión hidrostática aplicada. Los estudios presentados en esta tesis han ayudado a alcanzar un mejor entendimiento de los mecanismos de producción de dañado, su evolución, amorfización y SPER para Ge, además de servir como una útil herramienta para continuar el trabajo en este campo. In the recent years, Ge has regained attention to be integrated into existing microelectronic technologies. Even though it is not thought to be a feasible full replacement to Si in the near future, it will likely serve as an excellent complement to enhance electrical properties in future devices, specially due to its high carrier mobilities. This integration requires a significant upgrade of the state-of-the-art of regular manufacturing processes. Simulation techniques, such as kinetic Monte Carlo (KMC) algorithms, provide an appealing environment to research and innovation in the field, specially in terms of time and funding costs. In the present study, KMC techniques are used, for the first time, to understand Ge front-end processing, specifically damage accumulation and amorphization produced by ion implantation and Solid Phase Epitaxial Regrowth (SPER) of the amorphized layers. First, Binary Collision Approximation (BCA) simulations are used to calculate the damage caused by every ion. The evolution of this damage over time is simulated using non-lattice, or Object, KMC (OKMC) in which only defects are considered. SPER is simulated through a Lattice KMC (LKMC) approach, being able to follow the evolution of the lattice atoms forming the amorphous/crystalline interface. With the amorphization model developed in this work, implemented into a multi-material process simulator, all these processes can be simulated. It has been possible to understand damage accumulation, from point defect generation up to full amorphous layers formation. This accumulation occurs in three differentiated regimes, starting at a slow formation rate of the damage regions, followed by a fast local relaxation of areas into the amorphous phase where both crystalline and amorphous phases coexist, ending in full amorphization of extended layers, where the accumulation rate saturates. This transition occurs when the damage concentration overcomes a certain threshold value, which is independent of the implantation conditions. When implanting ions at relatively high temperatures, dynamic annealing takes place, healing the previously induced damage and establishing a competition between damage generation and its dissolution. These effects become specially important for light ions, as B, for which the created damage is more diluted, smaller and differently distributed than that caused by implanting heavier ions, as Ge. This description successfully reproduces damage quantity and extension of amorphous layers caused by means of ion implantation reported in the literature. Recrystallization velocity of the previously amorphized sample strongly depends on the substrate orientation. The presented LKMC model has been able to explain these differences between orientations through a simple model, dominated by one only activation energy and different prefactors for the SPER rates depending on the neighboring configuration of the recrystallizing atoms. Twin defects formation appears as a consequence of this description, and are predominant for (111)Ge oriented grown substrates. This model is able to reproduce experimental results for different orientations, temperatures and times of evolution of the amorphous/crystalline interface reported by different authors. Preliminary parameterizations for the activation strain tensors are able to also provide a good match between simulations and reported experimental results for SPER velocities at different temperatures under the appliance of hydrostatic pressure. The studies presented in this thesis have helped to achieve a greater understanding of damage generation, evolution, amorphization and SPER mechanisms in Ge, and also provide a useful tool to continue research in this field.

Propellantless deorbiting of space debris by bare electrodynamic tethers : final report

A Space tether is a thin, multi-kilometers long conductive wire, joining a satellite and some opposite end mass, and keeping vertical in orbit by the gravity-gradient. The ambient plasma, being highly conductive, is equipotential in its own co-moving frame. In the tether frame, in relative motion however, there is in the plasma a motional electric field of order of 100 V/km, product of (near) orbital velocity and geomagnetic field. The electromotive force established over the tether length allows plasma contactor devices to collect electrons at one polarized-positive (anodic) end and eject electrons at the opposite end, setting up a current along a standard, fully insulated tether. The Lorentz force exerted on the current by the geomagnetic field itself is always drag; this relies on just thermodynamics, like air drag. The bare tether concept, introduced in 1992 at the Universidad Politécnica de Madrid (UPM), takes away the insulation and has electrons collected over the tether segment coming out polarized positive; the concept rests on 2D (Langmuir probe) current-collection in plasmas being greatly more efficient than 3D collection. A Plasma Contactor ejects electrons at the cathodic end. A bare tether with a thin-tape cross section has much greater perimeter and de-orbits much faster than a (corresponding) round bare tether of equal length and mass. Further, tethers being long and thin, they are prone to cuts by abundant small space debris, but BETs has shown that the tape has a probability of being cut per unit time smaller by more than one order of magnitude than the corresponding round tether (debris comparable to its width are much less abundant than debris comparable to the radius of the corresponding round tether). Also, the tape collects much more current, and de-orbits much faster, than a corresponding multi-line “tape” made of thin round wires cross-connected to survive debris cuts. Tethers use a dissipative mechanism quite different from air drag and can de-orbit in just a few months; also, tape tethers are much lighter than round tethers of equal length and perimeter, which can capture equal current. The 3 disparate tape dimensions allow easily scalable design. Switching the cathodic Contactor off-on allows maneuvering to avoid catastrophic collisions with big tracked debris. Lorentz braking is as reliable as air drag. Tethers are still reasonably effective at high inclinations, where the motional field is small, because the geomagnetic field is not just a dipole along the Earth polar axis. BETs is the EC FP7/Space Project 262972, financed in about 1.8 million euros, from 1 November 2010 to 31 January 2014, and carrying out RTD work on de-orbiting space debris. Coordinated by UPM, it has partners Università di Padova, ONERA-Toulouse, Colorado State University, SME Emxys, DLR–Bremen, and Fundación Tecnalia. BETs work involves 1) Designing, building, and ground-testing basic hardware subsystems Cathodic Plasma Contactor, Tether Deployment Mechanism, Power Control Module, and Tape with crosswise and lengthwise structure. 2) Testing current collection and verifying tether dynamical stability. 3) Preliminary design of tape dimensions for a generic mission, conducive to low system-to-satellite mass ratio and probability of cut by small debris, and ohmic-effects regime of tether current for fast de-orbiting. Reaching TRL 4-5, BETs appears ready for in-orbit demostration.

Piel artificial : metamorfosis arquitectónica del cuerpo a través de la superficie

El cuerpo, como conjunto organizado de partes que configuran el organismo, es una entidad metamórfica. El ser humano procura dar continuidad a esta condición mutante que le caracteriza, mediante diversas acciones de carácter arquitectónico. A partir de la observación de los procesos naturales, el individuo se autodefine artificialmente, transformando su realidad innata en una versión distorsionada de sí misma. Por adición, sustracción o modificación, la piel como última capa natural, se convierte en lienzo de manipulación plástica primordial para asegurar la existencia y controlar la identidad, individual y colectiva. La evolución experimental de estas intervenciones primarias, permite suplantar la piel natural por una reinterpretación construida; una piel exenta y desmontable con la que proyectar un yo diferente provisionalmente. El uso constante de esta prótesis removible e intercambiable, provoca que el cuerpo desnudo se transforme en un cuerpo vestido, en un entorno social en el que la desnudez deja de ser el estado natural del ser humano. La piel artificial se construye mediante una gran diversidad de procesos proyectuales, siendo la transformación de la superficie bidimensional en envolvente tridimensional el más utilizado a lo largo de la existencia de la vestimenta. El plano, concebido como principal formato de revestimiento humano, se adapta a su irregularidad topográfica por modelado, perforación, fragmentación, trazado, parametrización e interacción, transformándose en una envolvente cada vez más compleja y perfecta. Su diseño implica la consideración de variables como la dimensión y la escala, la función y la forma, la estructura, el material y la construcción, la técnica y los instrumentos. La vestimenta es una arquitectura habitacional individual, un límite corporal que relaciona el espacio entre el exterior e el interior, lo ajeno y lo propio, el tú y el yo; un filtro concreto y abstracto simultáneamente; una interfaz en donde el vestido es el continente y el cuerpo su contenido. ABSTRACT The body as a whole, organized of parts that make up the organism, is a metamorphic entity. The human being seeks to give continuity to this mutant condition which characterizes him through various actions of architectural character. From the observation of the natural processes, the individual defines itself artificially, transforming its innate reality into a distorted version of itself. By addition, subtraction or modification, the skin, as the last natural layer, becomes canvas of primary plastic handling in order to ensure the existence and to control the identity, both individual and collective. The experimental evolution of these primary interventions allows to impersonate the natural skin by a constructed reinterpretation; a free and detachable skin together with which to be able to project, temporarily, a different “I”. The constant use of this removable and interchangeable prosthesis causes the naked body to be transformed into a dressed body, in a social setting in which the nudity is no longer the natural state of the human being. The artificial skin is constructed by a variety of projectual processes; the most used throughout the existence of the outfit is transforming the two-dimensional surface into a three-dimensional covering. The plan, conceived as the main human lining format, adapts to its topographic irregularity by modeling, drilling, fragmentation, outline, parameters and interaction, thus becoming a type of increasingly more complex and perfect covering. Its design implies the consideration of different variables such as the dimension and the scale, the function and the shape, the structure, the material and the construction, the technique and the instruments. The clothing is an individual residential architecture, a body boundary which relates the space between outside and inside, between the external and the self, between “you” and “I”; at the same time a specific and abstract filter; an interface where the dress is the container and the body its content.

Modeling and Simulation of Upper Brachial Plexus Injury

This article presents the first musculoskeletal model and simulation of upper plexus brachial injury. From this model is possible to analyse forces and movement ranges in order to develop a robotic exoskeleton to improve rehabilitation. The software that currently exists for musculoskeletal modeling is varied and most have advanced features for proper analysis and study of motion simulations. Whilst more powerful computer packages are usually expensive, there are other free and open source packages available which offer different tools to perform animations and simulations and which obtain forces and moments of inertia. Among them, Musculoskeletal Modeling Software was selected to construct a model of the upper limb, which has 7 degrees of freedom and 10 muscles. These muscles are important for two of the movements simulated in this article that are part of the post-surgery rehabilitation protocol. We performed different movement animations which are made using the inertial measurement unit to capture real data from movements made by a human being. We also performed the simulation of forces produced in elbow flexion-extension and arm abduction-adduction of a healthy subject and one with upper brachial plexus injury in a postoperative state to compare the force that is capable of being produced in both cases.