Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III?V materials on silicon for photovoltaic applications. When manufacturing a multi-junction solar cell on silicon, one of the first processes to be addressed is the development of the bottom subcell and, in particular, the formation of its emitter. In this study, we analyze, both experimentally and by simulations, the formation of the emitter as a result of phosphorus diffusion that takes place during the first stages of the epitaxial growth of the solar cell. Different conditions for the Metal-Organic Vapor Phase Epitaxy (MOVPE) process have been evaluated to understand the impact of each parameter, namely, temperature, phosphine partial pressure, time exposure and memory effects in the final diffusion profiles obtained. A model based on SSupremIV process simulator has been developed and validated against experimental profiles measured by ECV and SIMS to calculate P diffusion profiles in silicon formed in a MOVPE environment taking in consideration all these factors.

Laser ablation modelling of aluminium, silver and crystalline silicon for applications in photovoltaic technologies

Laser material processing is being extensively used in photovoltaic applications for both the fabrication of thin film modules and the enhancement of the crystalline silicon solar cells. The two temperature model for thermal diffusion was numerically solved in this paper. Laser pulses of 1064, 532 or 248 nm with duration of 35, 26 or 10 ns were considered as the thermal source leading to the material ablation. Considering high irradiance levels (108–109 W cm−2), a total absorption of the energy during the ablation process was assumed in the model. The materials analysed in the simulation were aluminium (Al) and silver (Ag), which are commonly used as metallic electrodes in photovoltaic devices. Moreover, thermal diffusion was also simulated for crystalline silicon (c-Si). A similar trend of temperature as a function of depth and time was found for both metals and c-Si regardless of the employed wavelength. For each material, the ablation depth dependence on laser pulse parameters was determined by means of an ablation criterion. Thus, after the laser pulse, the maximum depth for which the total energy stored in the material is equal to the vaporisation enthalpy was considered as the ablation depth. For all cases, the ablation depth increased with the laser pulse fluence and did not exhibit a clear correlation with the radiation wavelength. Finally, the experimental validation of the simulation results was carried out and the ability of the model with the initial hypothesis of total energy absorption to closely fit experimental results was confirmed.

Study of the brittle fracture of monocrystalline silicon wafers

There is a growing trend towards using thinner wafers in order to reduce the costs of solar energy. But the current tools employed during the solar cells production are not prepared to work with thinner wafers, decreasing the industrial yield due to the high number of wafers broken. To develop new tools, or modify existing ones, the mechanical properties have to be determined. This paper tackles an experimental study of the mechanical properties of wafers. First, the material characteristics are detailed and the process to obtain wafers is presented. Then, the complete test setup and the mechanical strength results interpreted by a described numerical model are shown.

Mechanical characterization of multicrystalline silicon wafers

The possibility of using more economical silicon feedstock, i.e. as support for epitaxial solar cells, is of interest when the cost reduction and the properties are attractive. We have investigated the mechanical behavior of two blocks of upgraded metallurgical silicon, which is known to present high content of impurities even after being purified by the directional solidification process. The impurities are mainly metals like Al and silicon compounds. Thus, it is important to characterize their effect in order to improve cell performance and to ensure the survival of the wafers throughout the solar value chain. Microstructure and mechanical properties were studied by means of ring on ring and three point bending tests. Additionally, Young’s modulus, hardness and fracture toughness were measured. These results showed that it is possible to obtain marked improvements in toughness when impurities act as microscopic internal crack arrestors. However, the same impurities can be initiators of damage due to residual thermal stresses introduced during the crystallization process.

Progress on the development of a technology for silicon purification

The polysilicon market is experiencing tremendous changes due to the strong demand from Photovoltaics (PV), which has by far surpassed the demand from Microelectronics. The need of solar silicon has induced a large increase in capacity, which has now given a scenario of oversupply, reducing the polysilicon price to levels that put a strong pressure on the cost structure of the producers. The paper reports on the R&D efforts carried out in the field of solar silicon purification via the chlorosilane route by a private-public consortium that is building a pilot plant of 50-100 tonnes/year, that will synthesize trichlorosilane, purify it and deposit ultrapure silicon in an industrial-size Siemens type reactor. It has also capabilities for ingot growth and material characterization. A couple of examples of the progress so far are given, the first one related to the recycling scheme of chlorinated compounds, and the second to the minimization of radiation losses in the CVD deposition process, which account for a relevant part of the total energy consumption. In summary, the paper gives details on the technology being developed in our pilot plant, which offers a unique platform for field-testing of innovative approaches that can lead to a cost reduction of solar silicon produced via the chlorosilane route.

Full-Wafer Roller-NIL Processes for Silicon Solar Cell Texturisation

The highest solar cell efficiencies both for c-Si and mc-Si were reached using template based texturing processes. Especially for mc-Si the benefit of a defined texture, the so called honeycomb texture, was demonstrated impressively. However, up until now, no industrially feasible process has been available to pattern the necessary etching masks with the sufficient resolution. Roller-Nanoimprint Lithography (Roller-NIL) has the potential to overcome these limitations and to allow high quality pattern transfers, even in the sub-micron regime, in continuous in-line processes. Therefore, this etch-mask patterning technique is a suitable solution to bring such elaborate features like the honeycomb texture to an industrial realization. Beyond that, this fast printing-like technology opens up new possibilities to introduce promising concepts like photonic structures into solar cells.

Análisis del funcionamiento de un generador de Silicio Cristalino de 7kW tras 16 años de operación en Madrid

Este artículo presenta la degradación observada en un generador de x-Si 7 kW de potencia tras 16 años de exposición en la terraza del Instituto de Energía Solar de la Universidad Politécnica de Madrid. La caída de la potencia pico ha sido del 9% durante dicho periodo o, lo que es equivalente, una degradación anual del 0,56%; mientras que la desviación típica se ha mantenido básicamente constante. Los principales defectos visuales observados han sido delaminaciones en la superficie PET/PVF de la cara posterior de los módulos y roturas en las cajas de conexión y en la unión entre marco y vidrio. Todos los módulos analizados han pasado con suficiencia las pruebas de aislamiento eléctrico dispuestas en la norma IEC 61215, tanto en seco como en mojado.

Optimization of the silicon subcell for III-V on silicon multijunction solar cells: key differences with conventional silicon technology

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

Nanoimprinted diffraction gratings for crystalline silicon solar cells: implementation, characterization and simulation

Light trapping is becoming of increasing importance in crystalline silicon solar cells as thinner wafers are used to reduce costs. In this work, we report on light trapping by rear-side diffraction gratings produced by nano-imprint lithography using interference lithography as the mastering technology. Gratings fabricated on crystalline silicon wafers are shown to provide significant absorption enhancements. Through a combination of optical measurement and simulation, it is shown that the crossed grating provides better absorption enhancement than the linear grating, and that the parasitic reflector absorption is reduced by planarizing the rear reflector, leading to an increase in the useful absorption in the silicon. Finally, electro-optical simulations are performed of solar cells employing the fabricated grating structures to estimate efficiency enhancement potential.

On track for solar grade silicon through a siemens process-type laboratory reactor: operating conditions and energy savings

Polysilicon cost impacts significantly on the photovoltaics (PV) cost and on the energy payback time. Nowadays, the besetting production process is the so called Siemens process, polysilicon deposition by chemical vapor deposition (CVD) from Trichlorosilane. Polysilicon purification level for PV is to a certain extent less demanding that for microelectronics. At the Instituto de Energía Solar (IES) research on this subject is performed through a Siemens process-type laboratory reactor. Through the laboratory CVD prototype at the IES laboratories, valuable information about the phenomena involved in the polysilicon deposition process and the operating conditions is obtained. Polysilicon deposition by CVD is a complex process due to the big number of parameters involved. A study on the influence of temperature and inlet gas mixture composition on the polysilicon deposition growth rate, based on experimental experience, is shown. Moreover, CVD process accounts for the largest contribution to the energy consumption of the polysilicon production. In addition, radiation phenomenon is the major responsible for low energetic efficiency of the whole process. This work presents a model of radiation heat loss, and the theoretical calculations are confirmed experimentally through a prototype reactor at our disposal, yielding a valuable know-how for energy consumption reduction at industrial Siemens reactors.

The Influence of Different Surface Treatments on the Mechanical Strength of Silicon Wafers

The implementation of photovoltaic solar energy based on silicon is being slowed down by the shortage of raw material. In this context, the use of thinner wafers arises as a solution reducing the amount of silicon in the photovoltaic modules. On the other hand, the manufacturing process with thinner wafers can become complicated with traditional tools. The high number of damaged wafers reduces the global yield. It’s known that edge and surface cracks and defects determine the mechanical strength of wafers. There are several ways of removing these defects e. g. subjecting wafers to a mechanical polishing or to a chemical etching. This paper shows a comparison between different surface treatments and their influence on the mechanical strength.

Study of the Edge and Surface Cracks Influence in the Mechanical Strength of Silicon Wafers

The objective of the present study is the estimation of the depth to which the wire sawing process causes damage to the wafer surfaces. Previous analyses were carried out by means of the four line bending test. The characteristic of this test implied that the failure could be due to surface cracks located in the central zone of the wafer or near the edges. In order to evaluate the influence of the edge or surface cracks a new study has been carried out using the ball/ring on ring test. Description and results of the tests are presented. The preliminary analysis of the failure stress using analytical methods confirms the expected results. A Finite Element model developed to get more information of the test results is also presented.

A function using cubic splines for the analysis of alpha--particles spectra from silicon detectors

A function based on the characteristics of the alpha-particle lines obtained with silicon semiconductor detectors and modi"ed by using cubic splines is proposed to parametrize the shape of the peaks. A reduction in the number of parameters initially considered in other proposals was carried out in order to improve the stability of the optimization process. It was imposed by the boundary conditions for the cubic splines term. This function was then able to describe peaks with highly anomalous shapes with respect to those expected from this type of detector. Some criteria were implemented to correctly determine the area of the peaks and their errors. Comparisons with other well-established functions revealed excellent agreement in the "nal values obtained from both "ts. Detailed studies on reliability of the "tting results were carried out and the application of the function is proposed. Although the aim was to correct anomalies in peak shapes, the peaks showing the expected shapes were also well "tted. Accordingly, the validity of the proposal is quite general in the analysis of alpha-particle spectrometry with semiconductor detectors.

New laser-based approaches to improve the passivation and rear contact quality in high effiency crystalline silicon solar cells

Laser processing has been the tool of choice last years to develop improved concepts in contact formation for high efficiency crystalline silicon (c-Si) solar cells. New concepts based on standard laser fired contacts (LFC) or advanced laser doping (LD) techniques are optimal solutions for both the front and back contacts of a number of structures with growing interest in the c-Si PV industry. Nowadays, substantial efforts are underway to optimize these processes in order to be applied industrially in high efficiency concepts. However a critical issue in these devices is that, most of them, demand a very low thermal input during the fabrication sequence and a minimal damage of the structure during the laser irradiation process. Keeping these two objectives in mind, in this work we discuss the possibility of using laser-based processes to contact the rear side of silicon heterojunction (SHJ) solar cells in an approach fully compatible with the low temperature processing associated to these devices. First we discuss the possibility of using standard LFC techniques in the fabrication of SHJ cells on p-type substrates, studying in detail the effect of the laser wavelength on the contact quality. Secondly, we present an alternative strategy bearing in mind that a real challenge in the rear contact formation is to reduce the damage induced by the laser irradiation. This new approach is based on local laser doping techniques previously developed by our groups, to contact the rear side of p-type c-Si solar cells by means of laser processing before rear metallization of dielectric stacks containing Al2O3. In this work we demonstrate the possibility of using this new approach in SHJ cells with a distinct advantage over other standard LFC techniques.

Evaluación del potencial fotovoltaico del Campus Sur de la Universidad Politécnica de Madrid

El presente proyecto engloba el estudio del potencial fotovoltaico del Campus Sur de la Universidad Politécnica de Madrid. Este estudio se divide en tres partes. En primer lugar, se calcula la productividad del campus. En segundo lugar, se diseña la disposición de los generadores fotovoltaicos en los terrenos disponibles. Como paso final, se realiza un estudio económico de distintos supuestos. Para realizar los cálculos de productividad, se utiliza IESPRO, un programa desarrollado en Matlab©, junto con una aplicación complementaria desarrollada en el mismo lenguaje. Gracias a estos dos software es posible obtener una estimación muy realista de la energía anual generada. El aprovechamiento del terreno se estudia con la ayuda del software libre Sketchup©. Gracias a esta aplicación, es posible la reconstrucción del Campus Sur en 3D. Dicha reconstrucción incluye edificaciones y vegetación, facilitando la distribución de los generadores fotovoltaicos en todas las zonas, pudiendo evitar zonas con sombreado o no aptas para la instalación, y maximizando la utilización del terreno. El conjunto de los análisis anteriores permiten determinar el rendimiento energético del Campus Sur en sus distintas configuraciones, es decir, únicamente instalando generadores fotovoltaicos en las azoteas de los edificios, o la instalación en todo el terreno disponible, el cual incluye las azoteas y los descampados. Este rendimiento energético, comparado con el consumo anual de todo el campus, permite estimar el coste financiero de llevar a cabo la instalación y su rentabilidad, todo ello detallado en el estudio económico. El estudio económico se basa en dos supuestos, el primero de ellos, únicamente tiene en cuenta la instalación en las azoteas de los edificios. El segundo estudio, incluye los descampados y las azoteas. Con estos dos estudios se puede verificar la viabilidad del proyecto, facilitando datos concretos sobre las ventajas de cada uno de ellos. ABSTRACT. The aim of this work is to study the photovoltaic potential in the South Campus of the Polytechnic University of Madrid. The work has been divided into three parts. The first one is focused on the calculus of the solar harvesting productivity of the South Campus. The second part is centered in the development of the complete photovoltaic system layout design, taking into account the available placement. In the third part, an economic study considering several different scenarios is carried out. In order to calculate the solar productivity, the MATLAB based software tool IESPRO together with a complementary application developed in MATLAB as well, have been used. These programs allow to obtain an accurate estimation of the generated annual energy. The land use is studied with the help of free software SketchUp. With this application, it is possible to rebuild the South Campus in 3D. This reconstruction includes: buildings and vegetation, facilitating the distribution of photovoltaic generators in all areas, to avoid shaded or unsuitable areas for the installation, and maximizing land use. All the above analysis allow determining the energy efficiency of the South Campus for two different configurations, i.e., installing solar photovoltaic arrays only on the roofs of the buildings, or installing solar photovoltaic arrays throughout the land available, including vacant lots and rooftops. The facilities final cost and the cost effectiveness are estimated by comparing the energy efficiency with the South Campus total consumption. This study is based on two different scenarios: the first one considers the solar arrays installation in the buildings roofs, and the second one includes in the layout the vacant lots and rooftops. These studies allow verifying the feasibility of the project, and provide specific information related to the advantages and drawbacks of each scenario.