E pur si muove

Prólogo del libro Voiture minimum : Le Corbusier y el automóvil, de Antonio Amado Lorenzo

Entrevista con José Antonio Martín Pereda. "Las empresas terminarán dándose cuenta por si solas de que la única posibilidad de sobrevivir en el futuro es disponer de sus propios departamentos de I + D".

Entrevista a José Antonio Martín Pereda, en la que expresa su opinión sobre el proceso de Reforma de las Enseñanzas y sobre el hecho de que la elaboración del Plan de Investigación Científica y Desarrollo Tecnológico coincidiesen con un período electoral.

Compatison of S-SI, A-SI and CDTE technologies wording at the same conditions, after the first year of electricity production

Grid connected solar plants are a good opportunity for their use for research as a secondary objective. In countries were feed-in tariffs are still active, it is possible to include in the design of the solar plant elements for its use for research. In the case of the solar plant presented here both objectives are covered. The solar plant of this work is formed by PV modules of three different technologies: Multicrystalline, amorphous and CdTe. In one part of the solar plant, the three technologies are working at the same conditions, not only ambient conditions but also similar voltage and current input to the inverters. Both the commercial and the experimental parts of the solar plant have their own independent inverters with their meters but are finally connected to the same meter to inject. In this work we analyse the results for the first year of operation of the experimental solar plant. Productions of three different technologies in exactly the same conditions are compared and presented. According to the results, all the three technologies have conversion efficiencies dropping when the temperature increases. Amorphous module experiences the lesser reduction, whereas the multicrystalline module suffers the most.

Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric

GaN based high electron mobility transistors have draw great attention due to its potential in high temperature, high power and high frequency applications [1, 2]. However, significant gate leakage current is still one of the issues which need to be solved to improve the performance and reliability of the devices [3]. Several research groups have contributed to solve this problem by using metal–oxide–semiconductor HEMTs (MOSHEMTs), with a thin dielectric layer, such as SiO2 [4], Al2O3 [5], HfO2 [6] and Gd2O3 [7] between the gate and the barrier layer on AlGaN/GaN heterostructures. Gd2O3 has shown low interfacial density of states(Dit) with GaN and a high dielectric constant and low electrical leakage currents [8], thus is considered as a promising candidate for the gate dielectrics on GaN. MOS-HEMTs using Gd2O3 grown by electron-beam heating [7] or molecular beam epitaxy (MBE) [8] on GaN or AlGan/GaN structure have been investigated, but further research is still needed in Gd2O3 based AlGaN/GaN MOSHEMTs.

Impact of metal-organic vapor phase epitaxy environment on silicon bulk lifetime for III–V-on-Si multijunction solar cells

With the final goal of integrating III-V materials on silicon substrates for tandem solar cells, the influence of the Metal-Organic Vapor Phase Epitaxy (MOVPE) environment on the minority carrier properties of silicon wafers has been evaluated. These properties will essentially determine the photovoltaic performance of the bottom cell in a III-V-on-Si tandem solar cell. A comparison of the base minority carrier lifetimes obtained for different thermal processes carried out in a MOVPE reactor on Czochralski silicon wafers has been carried out. An important degradation of minority carrier lifetime during the surface preparation (i.e. H2 anneal) has been observed. Three different mechanisms have been proposed for explaining this behavior: 1) the introduction of extrinsic impurities coming from the reactor; 2) the activation of intrinsic lifetime killing impurities coming from the wafer itself; and finally, 3) the formation of crystal defects, which eventually become recombination centers. The effect of the emitter formation by phosphorus diffusion has also been evaluated. In this sense, it has been reported that lifetime can be recovered during the emitter formation either by the effect of the P on extracting impurities, or by the role of the atomic hydrogen on passivating the defects.

Study of a-Si crystallization dependence on power and irradiation time using a CW green laser

An advantage of laser crystallization over conventional heating methods is its ability to limit rapid heating and cooling to thin surface layers. Laser energy is used to heat the a-Si thin film to change the microstructure to poly-Si. Thin film samples of a-Si were irradiated with a CW-green laser source. Laser irradiated spots were produced by using different laser powers and irradiation times. These parameters are identified as key variables in the crystallization process. The power threshold for crystallization is reduced as the irradiation time is increased. When this threshold is reached the crystalline fraction increases lineally with power for each irradiation time. The experimental results are analysed with the aid of a numerical thermal model and the presence of two crystallization mechanisms are observed: one due to melting and the other due to solid phase transformation.

Laser induced forward transfer of silver pastes for printing of fingers in c-si cells.

The main objective of this work is to adapt the Laser Induced Forward Techniques (LIFT), a well- known laser direct writing technique for material transfer, to define metallic contacts (fingers and busbars) onto c-Si cells. The silver paste (with viscosity around 30-50 kcPs) is applied over a glass substrate using a coater. The thickness of the paste can be control changing the deposit parameters. The glass with the silver paste is set at a controlled gap over the c-Si cell. A solid state pulsed laser (532 nm) is focused at the glass/silver interface producing a droplet of silver that it is transferred to the c-Si cell. A scanner is used to print lines. The process parameters (silver paste thickness, gap and laser parameters -spot size, pulse energy and overlapping of pulses) are modified and the morphology of the lines is studied using confocal microscopy. Long lines are printed and the uniformity (in thickness and height) is studied. Some examples of metallization of larger areas (up to 10 cm x 10 cm) are presented.

Caracterización óptica de módulos fotovoltaicos semitransparentes de a-Si para integración en edificios comerciales

La inferencia del rendimiento final que los sistemas fotovoltaicos multifunción para edificación, más conocidos como Buiding Integrated PhotoVoltaics (BIPV), es decir, su funcionamiento y la viabilidad de los mismos, es hoy posible gracias a las herramientas de simulación disponibles. Estas requieren del conocimiento previo de los parámetros característicos de dichos elementos fotovoltaicos. Unos son obtenidos por mediciones directas o indirectas en el laboratorio, y otros mediante su monitorización en condiciones de funcionamiento reales. En este trabajo se ha abordado la caracterización óptica de los módulos fotovoltaicos comerciales de capa fina (a-Si) que están siendo utilizados en un proyecto propio del IES, en el cual se estudian estos aspectos. La característica más destacada de estos módulos es la gradación en su transparencia para adecuarlos a la integración como envolventes tipo muro cortina en edificios del sector terciario. En particular, el objetivo de este trabajo ha sido la medición de la transmitancia y la reflectancia espectrales, en los rangos UV/Vis/NIR, tanto en incidencia normal como bajo otros ángulos más próximos a los de operación. Con los resultados obtenidos, se han calculado los valores de la radiación reflejada y la transmitida, totales y por rangos UV, Vis y NIR, lo que permite la correcta caracterización de los módulos fotovoltaicos integrados en fachadas y la posterior evaluación de su impacto sobre el rendimiento eléctrico, térmico y la iluminación en un edificio.

XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire

The International Workshop on Nitride Semiconductors (IWN) is a biennial academic conference in the field of group III nitride research. The IWN and the International Conference on Nitride Semiconductors (ICNS) are held in alternating years and cover similar subject areas.