19 resultados para high power laser system


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In this paper, a novel excitation-system ground-fault location method is described and tested in a 106 MVA synchronous machine. In this unit, numerous rotor ground-fault trips took place always about an hour after the synchronization to the network. However, when the field winding insulation was checked after the trips, there was no failure. The data indicated that the faults in the rotor were caused by centrifugal forces and temperature. Unexpectedly, by applying this new method, the failure was located in a cable between the excitation transformer and the automatic voltage regulator. In addition, several intentional ground faults were performed along the field winding with different fault resistance values, in order to test the accuracy of this method to locate defects in rotor windings of large generators. Therefore, this new on-line rotor ground-fault detection algorithm is tested in high-power synchronous generators with satisfactory results.

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This paper presents some power converter architectures and circuit topologies, which can be used to achieve the requirements of the high performance transformer rectifier unit in aircraft applications, mainly as: high power factor with low THD, high efficiency and high power density. The voltage and the power levels demanded for this application are: three-phase line-to-neutral input voltage of 115 or 230V AC rms (360 – 800Hz), output voltage of 28V DC or 270V DC(new grid value) and the output power up to tens of kilowatts.

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Nowadays the interest in high power semiconductor devices is growing for applications such as telemetry, lidar system or free space communications. Indeed semiconductor devices can be an alternative to solid state lasers because they are more compact and less power consuming. These characteristics are very important for constrained and/or low power supply environment such as airplanes or satellites. Lots of work has been done in the 800-1200 nm range for integrated and free space Master Oscillator Power Amplifier (MOPA) [1]-[3]. At 1.5 ?m, the only commercially available MOPA is from QPC [4]: the fibred output power is about 700 mW and the optical linewidth is 500 kHz. In this paper, we first report on the simulations we have done to determine the appropriate vertical structure and architecture for a good MOPA at 1.58 ?m (section II). Then we describe the fabrication of the devices (section III). Finally we report on the optical and electrical measurements we have done for various devices (section IV).

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Many photonic devices are based on waveguides (WG) whose optical properties can be externally modified. These active WGs are usually obtained with electrooptic materials in either the propagating film (core) or the substrate (cladding). In the second case, the WG tunability is based on the interaction of the active material with the evanescent field of the propagating beam.Liquid crystals (LCs) are an excellent choice as electrooptic active materials since they feature high birefringence, low switching voltage, and relatively simple manufacturing. In this work, we have explored alternative ways to prepare WGs of arbitrary shapes avoiding photolithographic steps. To do this, we have employed a UV laser unit (Spectra Physics)attached to an xyzCNC system mounted on an optical bench. The laser power is 300mW, the spot size can be reduced slightly below 1 µm, and the electromechanicalpositioning is well below that number.Different photoresinshave been evaluated for curing time and uniformity; the results have been compared to equivalent WGs realized by standard photolithographic procedures. Best results have been obtained with several kinds of NOA adhesives (Norland Products Inc.) and SU8 (Microchem). NOA81 optical adhesive has been employed by several groups for the preparation ofmicrochannels [1] and microfluidic systems[2]. In our case, several NOAs having different refractive indices have been tested in order to optimize light coupling and guiding. The adhesive is spinnedonto a substrate, and a number of segmented WGs are written with the laser system. The laser power is attenuated 20 dB. Then the laser spot is swept a number of times (from 1 to 900) on every segment. It has been found that, for example, the optimum number of sweeps for NOA81 is 30-70 times (center of the figure) under these conditions. The WG dimensions obtained with this procedure are about 7 µm high and 12 µm wide.