A voltage disturbances prototype for testing electrical generators connected to microgrids

The search for new energy models arises as a necessity to have a sustainable power supply. The inclusion of distributed generation sources (DG) allows to reduce the cost of facilities, increase the security of the grid or alleviate problems of congestion through the redistribution of power flows. In remote microgrids it is needed in a particular way a safe and reliable supply, which can cover the demand for a low cost; due to this, distributed generation is an alternative that is being widely introduced in these grids. But the remote microgrids are especially weak grids because of their small size, low voltage level, reduced network mesh and distribution lines with a high ratio R/X. This ratio affects the coupling between grid voltages and phase shifts, and stability becomes an issue of greater importance than in interconnected systems. To ensure the appropriate behavior of generation sources inserted in remote microgrids -and, in general, any electrical equipment-, it is essential to have devices for testing and certification. These devices must, not only faithfully reproduce disturbances occurring in remote microgrids, but also to behave against the equipment under test (EUT) as a real weak grid. This also makes the device commercially competitive. To meet these objectives and based on the aforementioned, it has been designed, built and tested a voltage disturbances generator, in order to provide a simple, versatile, full and easily scalable device to manufacturers and laboratories in the sector.

Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnTe/n-ZnSe Solar Cells

Limitations on the open-circuit voltage of p-ZnTe/n-ZnSe heterojunction solar cells are studied via current-voltage (I-V) measurements under solar concentration and at variable temperature. The open-circuit voltage reaches a maximum value of 1.95 V at 77 K and 199 suns. The open-circuit voltage shows good agreement with the calculated built-in potential of 2.00 V at 77 K. These results suggest that the open-circuit voltage is limited by heterojunction band offsets associated with the type-II heterojunction band lineup, rather than the bandgap energy of the ZnTe absorber material.

Outward Rectification of Voltage-Gated K+ Channels Evolved at Least Twice in Life History

Voltage-gated potassium (K+) channels are present in all living systems. Despite high structural similarities in the transmembrane domains (TMD), this K+ channel type segregates into at least two main functional categories—hyperpolarization-activated, inward-rectifying (Kin) and depolarization-activated, outward-rectifying (Kout) channels. Voltage-gated K+ channels sense the membrane voltage via a voltage-sensing domain that is connected to the conduction pathway of the channel. It has been shown that the voltage-sensing mechanism is the same in Kin and Kout channels, but its performance results in opposite pore conformations. It is not known how the different coupling of voltage-sensor and pore is implemented. Here, we studied sequence and structural data of voltage-gated K+ channels from animals and plants with emphasis on the property of opposite rectification. We identified structural hotspots that alone allow already the distinction between Kin and Kout channels. Among them is a loop between TMD S5 and the pore that is very short in animal Kout, longer in plant and animal Kin and the longest in plant Kout channels. In combination with further structural and phylogenetic analyses this finding suggests that outward-rectification evolved twice and independently in the animal and plant kingdom.

Implications of low breakdown voltage of component subcells on external quantum efficiency measurements of multijunction solar cells

The electrical and optical coupling between subcells in a multijunction solar cell affects its external quantum efficiency (EQE) measurement. In this study, we show how a low breakdown voltage of a component subcell impacts the EQE determination of a multijunction solar cell and demands the use of a finely adjusted external voltage bias. The optimum voltage bias for the EQE measurement of a Ge subcell in two different GaInP/GaInAs/Ge triple-junction solar cells is determined both by sweeping the external voltage bias and by tracing the I–V curve under the same light bias conditions applied during the EQE measurement. It is shown that the I–V curve gives rapid and valuable information about the adequate light and voltage bias needed, and also helps to detect problems associated with non-ideal I–V curves that might affect the EQE measurement. The results also show that, if a non-optimum voltage bias is applied, a measurement artifact can result. Only when the problems associated with a non-ideal I–V curve and/or a low breakdown voltage have been discarded, the measurement artifacts, if any, can be attributed to other effects such as luminescent coupling between subcells.