Advances on MBE selective area growth of III-nitride nanostructures: from nanoLEDs to pseudo substrates

The aim of this work is to provide an overview on the recent advances in the selective area growth (SAG) of (In)GaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. The first three sections deal with the basic growth mechanisms of GaN SAG and the emission control in the entire ultraviolet to infrared range, including approaches for white light emission, using InGaN disks and thick segments on axial nanocolumns. SAG of axial nanostructures is eveloped on both GaN/sapphire templates and GaN-buffered Si(111). As an alternative to axial nanocolumns, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods. Finally, section 5 reports on the SAG of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the templates is strongly reduced as indicated by a dramatic improvement of the optical properties. In the case of SAG on nonpolar (11-22) templates, the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of these nanostructures.

Selective injection of magnetic domain walls in Permalloy nanostripes

Selective injection of magnetic domain walls in Permalloy nanostripes

A novel ground fault non-directional selective protection method for ungrounded distribution networks

This paper presents a new selective and non-directional protection method to detect ground faults in neutral isolated power systems. The new proposed method is based on the comparison of the rms value of the residual current of all the lines connected to a bus, and it is able to determine the line with ground defect. Additionally, this method can be used for the protection of secondary substation. This protection method avoids the unwanted trips produced by wrong settings or wiring errors, which sometimes occur in the existing directional ground fault protections. This new method has been validated through computer simulations and experimental laboratory tests.