36 resultados para Open circuit potential
Resumo:
El objetivo de la tesis es investigar los beneficios que el atrapamiento de la luz mediante fenómenos difractivos puede suponer para las células solares de silicio cristalino y las de banda intermedia. Ambos tipos de células adolecen de una insuficiente absorción de fotones en alguna región del espectro solar. Las células solares de banda intermedia son teóricamente capaces de alcanzar eficiencias mucho mayores que los dispositivos convencionales (con una sola banda energética prohibida), pero los prototipos actuales se resienten de una absorción muy débil de los fotones con energías menores que la banda prohibida. Del mismo modo, las células solares de silicio cristalino absorben débilmente en el infrarrojo cercano debido al carácter indirecto de su banda prohibida. Se ha prestado mucha atención a este problema durante las últimas décadas, de modo que todas las células solares de silicio cristalino comerciales incorporan alguna forma de atrapamiento de luz. Por razones de economía, en la industria se persigue el uso de obleas cada vez más delgadas, con lo que el atrapamiento de la luz adquiere más importancia. Por tanto aumenta el interés en las estructuras difractivas, ya que podrían suponer una mejora sobre el estado del arte. Se comienza desarrollando un método de cálculo con el que simular células solares equipadas con redes de difracción. En este método, la red de difracción se analiza en el ámbito de la óptica física, mediante análisis riguroso con ondas acopladas (rigorous coupled wave analysis), y el sustrato de la célula solar, ópticamente grueso, se analiza en los términos de la óptica geométrica. El método se ha implementado en ordenador y se ha visto que es eficiente y da resultados en buen acuerdo con métodos diferentes descritos por otros autores. Utilizando el formalismo matricial así derivado, se calcula el límite teórico superior para el aumento de la absorción en células solares mediante el uso de redes de difracción. Este límite se compara con el llamado límite lambertiano del atrapamiento de la luz y con el límite absoluto en sustratos gruesos. Se encuentra que las redes biperiódicas (con geometría hexagonal o rectangular) pueden producir un atrapamiento mucho mejor que las redes uniperiódicas. El límite superior depende mucho del periodo de la red. Para periodos grandes, las redes son en teoría capaces de alcanzar el máximo atrapamiento, pero sólo si las eficiencias de difracción tienen una forma peculiar que parece inalcanzable con las herramientas actuales de diseño. Para periodos similares a la longitud de onda de la luz incidente, las redes de difracción pueden proporcionar atrapamiento por debajo del máximo teórico pero por encima del límite Lambertiano, sin imponer requisitos irrealizables a la forma de las eficiencias de difracción y en un margen de longitudes de onda razonablemente amplio. El método de cálculo desarrollado se usa también para diseñar y optimizar redes de difracción para el atrapamiento de la luz en células solares. La red propuesta consiste en un red hexagonal de pozos cilíndricos excavados en la cara posterior del sustrato absorbente de la célula solar. La red se encapsula en una capa dieléctrica y se cubre con un espejo posterior. Se simula esta estructura para una célula solar de silicio y para una de banda intermedia y puntos cuánticos. Numéricamente, se determinan los valores óptimos del periodo de la red y de la profundidad y las dimensiones laterales de los pozos para ambos tipos de células. Los valores se explican utilizando conceptos físicos sencillos, lo que nos permite extraer conclusiones generales que se pueden aplicar a células de otras tecnologías. Las texturas con redes de difracción se fabrican en sustratos de silicio cristalino mediante litografía por nanoimpresión y ataque con iones reactivos. De los cálculos precedentes, se conoce el periodo óptimo de la red que se toma como una constante de diseño. Los sustratos se procesan para obtener estructuras precursoras de células solares sobre las que se realizan medidas ópticas. Las medidas de reflexión en función de la longitud de onda confirman que las redes cuadradas biperiódicas consiguen mejor atrapamiento que las uniperiódicas. Las estructuras fabricadas se simulan con la herramienta de cálculo descrita en los párrafos precedentes y se obtiene un buen acuerdo entre la medida y los resultados de la simulación. Ésta revela que una fracción significativa de los fotones incidentes son absorbidos en el reflector posterior de aluminio, y por tanto desaprovechados, y que este efecto empeora por la rugosidad del espejo. Se desarrolla un método alternativo para crear la capa dieléctrica que consigue que el reflector se deposite sobre una superficie plana, encontrándose que en las muestras preparadas de esta manera la absorción parásita en el espejo es menor. La siguiente tarea descrita en la tesis es el estudio de la absorción de fotones en puntos cuánticos semiconductores. Con la aproximación de masa efectiva, se calculan los niveles de energía de los estados confinados en puntos cuánticos de InAs/GaAs. Se emplea un método de una y de cuatro bandas para el cálculo de la función de onda de electrones y huecos, respectivamente; en el último caso se utiliza un hamiltoniano empírico. La regla de oro de Fermi permite obtener la intensidad de las transiciones ópticas entre los estados confinados. Se investiga el efecto de las dimensiones del punto cuántico en los niveles de energía y la intensidad de las transiciones y se obtiene que, al disminuir la anchura del punto cuántico respecto a su valor en los prototipos actuales, se puede conseguir una transición más intensa entre el nivel intermedio fundamental y la banda de conducción. Tomando como datos de partida los niveles de energía y las intensidades de las transiciones calculados como se ha explicado, se desarrolla un modelo de equilibrio o balance detallado realista para células solares de puntos cuánticos. Con el modelo se calculan las diferentes corrientes debidas a transiciones ópticas entre los numerosos niveles intermedios y las bandas de conducción y de valencia bajo ciertas condiciones. Se distingue de modelos de equilibrio detallado previos, usados para calcular límites de eficiencia, en que se adoptan suposiciones realistas sobre la absorción de fotones para cada transición. Con este modelo se reproducen datos publicados de eficiencias cuánticas experimentales a diferentes temperaturas con un acuerdo muy bueno. Se muestra que el conocido fenómeno del escape térmico de los puntos cuánticos es de naturaleza fotónica; se debe a los fotones térmicos, que inducen transiciones entre los estados excitados que se encuentran escalonados en energía entre el estado intermedio fundamental y la banda de conducción. En el capítulo final, este modelo realista de equilibrio detallado se combina con el método de simulación de redes de difracción para predecir el efecto que tendría incorporar una red de difracción en una célula solar de banda intermedia y puntos cuánticos. Se ha de optimizar cuidadosamente el periodo de la red para equilibrar el aumento de las diferentes transiciones intermedias, que tienen lugar en serie. Debido a que la absorción en los puntos cuánticos es extremadamente débil, se deduce que el atrapamiento de la luz, por sí solo, no es suficiente para conseguir corrientes apreciables a partir de fotones con energía menor que la banda prohibida en las células con puntos cuánticos. Se requiere una combinación del atrapamiento de la luz con un incremento de la densidad de puntos cuánticos. En el límite radiativo y sin atrapamiento de la luz, se necesitaría que el número de puntos cuánticos de una célula solar se multiplicara por 1000 para superar la eficiencia de una célula de referencia con una sola banda prohibida. En cambio, una célula con red de difracción precisaría un incremento del número de puntos en un factor 10 a 100, dependiendo del nivel de la absorción parásita en el reflector posterior. Abstract The purpose of this thesis is to investigate the benefits that diffractive light trapping can offer to quantum dot intermediate band solar cells and crystalline silicon solar cells. Both solar cell technologies suffer from incomplete photon absorption in some part of the solar spectrum. Quantum dot intermediate band solar cells are theoretically capable of achieving much higher efficiencies than conventional single-gap devices. Present prototypes suffer from extremely weak absorption of subbandgap photons in the quantum dots. This problem has received little attention so far, yet it is a serious barrier to the technology approaching its theoretical efficiency limit. Crystalline silicon solar cells absorb weakly in the near infrared due to their indirect bandgap. This problem has received much attention over recent decades, and all commercial crystalline silicon solar cells employ some form of light trapping. With the industry moving toward thinner and thinner wafers, light trapping is becoming of greater importance and diffractive structures may offer an improvement over the state-of-the-art. We begin by constructing a computational method with which to simulate solar cells equipped with diffraction grating textures. The method employs a wave-optical treatment of the diffraction grating, via rigorous coupled wave analysis, with a geometric-optical treatment of the thick solar cell bulk. These are combined using a steady-state matrix formalism. The method has been implemented computationally, and is found to be efficient and to give results in good agreement with alternative methods from other authors. The theoretical upper limit to absorption enhancement in solar cells using diffractions gratings is calculated using the matrix formalism derived in the previous task. This limit is compared to the so-called Lambertian limit for light trapping with isotropic scatterers, and to the absolute upper limit to light trapping in bulk absorbers. It is found that bi-periodic gratings (square or hexagonal geometry) are capable of offering much better light trapping than uni-periodic line gratings. The upper limit depends strongly on the grating period. For large periods, diffraction gratings are theoretically able to offer light trapping at the absolute upper limit, but only if the scattering efficiencies have a particular form, which is deemed to be beyond present design capabilities. For periods similar to the incident wavelength, diffraction gratings can offer light trapping below the absolute limit but above the Lambertian limit without placing unrealistic demands on the exact form of the scattering efficiencies. This is possible for a reasonably broad wavelength range. The computational method is used to design and optimise diffraction gratings for light trapping in solar cells. The proposed diffraction grating consists of a hexagonal lattice of cylindrical wells etched into the rear of the bulk solar cell absorber. This is encapsulated in a dielectric buffer layer, and capped with a rear reflector. Simulations are made of this grating profile applied to a crystalline silicon solar cell and to a quantum dot intermediate band solar cell. The grating period, well depth, and lateral well dimensions are optimised numerically for both solar cell types. This yields the optimum parameters to be used in fabrication of grating equipped solar cells. The optimum parameters are explained using simple physical concepts, allowing us to make more general statements that can be applied to other solar cell technologies. Diffraction grating textures are fabricated on crystalline silicon substrates using nano-imprint lithography and reactive ion etching. The optimum grating period from the previous task has been used as a design parameter. The substrates have been processed into solar cell precursors for optical measurements. Reflection spectroscopy measurements confirm that bi-periodic square gratings offer better absorption enhancement than uni-periodic line gratings. The fabricated structures have been simulated with the previously developed computation tool, with good agreement between measurement and simulation results. The simulations reveal that a significant amount of the incident photons are absorbed parasitically in the rear reflector, and that this is exacerbated by the non-planarity of the rear reflector. An alternative method of depositing the dielectric buffer layer was developed, which leaves a planar surface onto which the reflector is deposited. It was found that samples prepared in this way suffered less from parasitic reflector absorption. The next task described in the thesis is the study of photon absorption in semiconductor quantum dots. The bound-state energy levels of in InAs/GaAs quantum dots is calculated using the effective mass approximation. A one- and four- band method is applied to the calculation of electron and hole wavefunctions respectively, with an empirical Hamiltonian being employed in the latter case. The strength of optical transitions between the bound states is calculated using the Fermi golden rule. The effect of the quantum dot dimensions on the energy levels and transition strengths is investigated. It is found that a strong direct transition between the ground intermediate state and the conduction band can be promoted by decreasing the quantum dot width from its value in present prototypes. This has the added benefit of reducing the ladder of excited states between the ground state and the conduction band, which may help to reduce thermal escape of electrons from quantum dots: an undesirable phenomenon from the point of view of the open circuit voltage of an intermediate band solar cell. A realistic detailed balance model is developed for quantum dot solar cells, which uses as input the energy levels and transition strengths calculated in the previous task. The model calculates the transition currents between the many intermediate levels and the valence and conduction bands under a given set of conditions. It is distinct from previous idealised detailed balance models, which are used to calculate limiting efficiencies, since it makes realistic assumptions about photon absorption by each transition. The model is used to reproduce published experimental quantum efficiency results at different temperatures, with quite good agreement. The much-studied phenomenon of thermal escape from quantum dots is found to be photonic; it is due to thermal photons, which induce transitions between the ladder of excited states between the ground intermediate state and the conduction band. In the final chapter, the realistic detailed balance model is combined with the diffraction grating simulation method to predict the effect of incorporating a diffraction grating into a quantum dot intermediate band solar cell. Careful optimisation of the grating period is made to balance the enhancement given to the different intermediate transitions, which occur in series. Due to the extremely weak absorption in the quantum dots, it is found that light trapping alone is not sufficient to achieve high subbandgap currents in quantum dot solar cells. Instead, a combination of light trapping and increased quantum dot density is required. Within the radiative limit, a quantum dot solar cell with no light trapping requires a 1000 fold increase in the number of quantum dots to supersede the efficiency of a single-gap reference cell. A quantum dot solar cell equipped with a diffraction grating requires between a 10 and 100 fold increase in the number of quantum dots, depending on the level of parasitic absorption in the rear reflector.
Resumo:
For solar cells dominated by radiative recombination, the performance can be significantly enhanced by improving the internal optics. Internally radiated photons can be directly emitted from the cell, but if confined by good internal reflectors at the front and back of the cell they can also be re-absorbed with a significant probability. This so-called photon recycling leads to an increase in the equilibrium minority carrier concentration and therefore the open-circuit voltage, Voc. In multijunction cells, the internal luminescence from a particular junction can also be coupled into a lower bandgap junction where it generates photocurrent in addition to the externally generated photocurrent, and affects the overall performance of the tandem. We demonstrate and discuss the implications of a detailed model that we have developed for real, non-idealized solar cells that calculates the external luminescent efficiency, accounting for wavelength-dependent optical properties in each layer, parasitic optical and electrical losses, multiple reflections within the cell and isotropic internal emission. The calculation leads to Voc, and we show data on high quality GaAs cells that agree with the trends in the model as the optics are systematically varied. For multijunction cells the calculation also leads to the luminescent coupling efficiency, and we show data on GaInP/GaAs tandems where the trends also agree as the coupling is systematically varied. In both cases, the effects of the optics are most prominent in cells with good material quality. The model is applicable to any solar cell for which the optical properties of each layer are well-characterized, and can be used to explore a wide phase space of design for single junction and multijunction solar cells.
Resumo:
In high quality solar cells, the internal luminescence can be harnessed to enhance the overall performance. Internal confinement of the photons can lead to an increased open-circuit voltage and short-circuit current. Alternatively, in multijunction solar cells the photons can be coupled from a higher bandgap junction to a lower bandgap junction for enhanced performance. We model the solar cell as an optical cavity and compare calculated performance characteristics with measurements. We also describe how very high luminescent coupling alleviates the need for top-cell thinning to achieve current-matching.
Resumo:
We introduce one trivial but puzzling solar cell structure. It consists of a high bandgap pn junction (top cell) grown on a substrate of lower bandgap. Let us assume, for example, that the bandgap of the top cell is 1.85 eV (Al 0.3Ga 0.7As) and the bandgap of the substrate is 1.42 eV (GaAs). Is the open-circuit of the top cell limited to 1.42 V or to 1.85 V? If the answer is ldquo1.85 Vrdquo we could then make the mind experiment in which we illuminate the cell with 1.5 eV photons (notice these photons would only be absorbed in the substrate). If we admit that these photons can generate photocurrent, then because we have also admitted that the voltage is limited to 1.85 V, it might be possible that the electron-hole pairs generated by these photons were extracted at 1.6 V for example. However, if we do so, the principles of thermodynamics could be violated because we would be extracting more energy from the photon than the energy it initially had. How can we then solve this puzzle?
Resumo:
In this paper a novel bidirectional multiple port dc/dc transformer topology is presented. The novel concept for dc/dc transformer is based on the Series Resonant Converter (SRC)topology operated at its resonant frequency point. This allows for higher switching frequency to be adopted and enables high efficiency/high power density operation. The feasibility of the proposed concept is verified on a 300W, 700 kHz three port prototype with 390V input voltage and 48V and 12V output voltages. A peak overall efficiency of 93% is measured at full load. A very good load and cross regulation characteristic of the converter is observed in the whole load range, from full load to open circuit. The sensitivity analysis of the resonant capacitance is also performed showing very slight deterioration in the converter performances when a resonant capacitor is changed ±30% of its nominal value.
Resumo:
In this paper a novel bidirectional multiple port dc/dc transformer topology is presented. The novel concept for dc/dc transformer is based on the Series Resonant Converter (SRC) topology operated at its resonant frequency point. This allows for higher switching frequency to be adopted and enables high efficiency/high power density operation. The feasibility of the proposed concept is verified on a 300W, 700 kHz three port prototype with 390V input voltage and 48V and 12V output voltages. A peak overall efficiency of 93% is measured at full load. A very good load and cross regulation characteristic of the converter is observed in the whole load range, from full load to open circuit. The sensitivity analysis of the resonant capacitance is also performed showing very slight deterioration in the converter performances when a resonant capacitor is changed ±30% of its nominal value.
Resumo:
Several attempts have been carried out to manufacture intermediate band solar cells (IBSC) by means of quantum dot (QD) superlattices. This novel photovoltaic concept allows the collection of a wider range of the sunlight spectrum in order to provide higher cell photocurrent while maintaining the open-circuit voltage (VOC) of the cell. In this work, we analyze InAs/GaAsN QD-IBSCs. In these cells, the dilute nitrogen in the barrier plays an important role for the strain-balance (SB) of the QD layer region that would otherwise create dislocations under the effect of the accumulated strain. The introduction of GaAsN SB layers allows increasing the light absorption in the QD region by multi-stacking more than 100 QD layers. The photo-generated current density (JL) versus VOC was measured under varied concentrated light intensity and temperature. We found that the VOC of the cell at 20 K is limited by the bandgap of the GaAsN barriers, which has important consequences regarding IBSC bandgap engineering that are also discussed in this work.
Resumo:
It has been proposed that the use of self-assembled quantum dot (QD) arrays can break the Shockley-Queisser efficiency limit by extending the absorption of solar cells into the low-energy photon range while preserving their output voltage. This would be possible if the infrared photons are absorbed in the two sub-bandgap QD transitions simultaneously and the energy of two photons is added up to produce one single electron-hole pair, as described by the intermediate band model. Here, we present an InAs/Al 0.25Ga 0.75As QD solar cell that exhibits such electrical up-conversion of low-energy photons. When the device is monochromatically illuminated with 1.32 eV photons, open-circuit voltages as high as 1.58 V are measured (for a total gap of 1.8 eV). Moreover, the photocurrent produced by illumination with photons exciting the valence band to intermediate band (VB-IB) and the intermediate band to conduction band (IB-CB) transitions can be both spectrally resolved. The first corresponds to the QD inter-band transition and is observable for photons of energy mayor que 1 eV, and the later corresponds to the QD intra-band transition and peaks around 0.5 eV. The voltage up-conversion process reported here for the first time is the key to the use of the low-energy end of the solar spectrum to increase the conversion efficiency, and not only the photocurrent, of single-junction photovoltaic devices. In spite of the low absorption threshold measured in our devices - 0.25 eV - we report open-circuit voltages at room temperature as high as 1.12 V under concentrated broadband illumination.
Resumo:
A new method has recently been proposed by us for accurate measurement of the solar cell temperature in any operational regime, in particular, at a maximum power point (MPP) of the I-V curve (T-p-n(MPP)). For this, fast switching of a cell from MPP to open circuit (OC) regime is carried out and open circuit voltage V-oc is measured immediately (within about 1 millisecond), so that this value becomes to be an indicator of T-p-n(MPP). In the present work, we have considered a practical case, when a solar cell is heated not only by absorption of light incident upon its surface (called "photoactive" absorption of power), but also by heat transferred from structural elements surrounding the cell and heated by absorption of direct or diffused sunlight ("non-photoactive" absorption of power with respect to a solar cell). This process takes place in any concentrator module with non-ideal concentrators. Low overheating temperature of the p-n junction (or p-n junctions in a multijunction cell) is a cumulative parameter characterizing the quality of a solar module by the factor of heat removal effectiveness and, at the same time, by the factor of low "non-photoactive" losses.
Resumo:
This paper describes the experimental setup, procedure, and results obtained, concerning the dynamics of a body lying on a floor, attached to a hinge, and exposed to an unsteady flow, which is a model of the initiation of rotational motion of ballast stones due to the wind generated by the passing of a high-speed train. The idea is to obtain experimental data to support the theoretical model developed in Sanz-Andres and Navarro-Medina (J Wind Eng Ind Aerodyn 98, 772–783, (2010), aimed at analyzing the initial phase of the ballast train-induced-wind erosion (BATIWE) phenomenon. The experimental setup is based on an open circuit, closed test section, low-speed wind tunnel, with a new sinusoidal gust generator mechanism concept, designed and built at the IDR/UPM. The tunnel’s main characteristic is the ability to generate a flow with a uniform velocity profile and sinusoidal time fluctuation of the speed. Experimental results and theoretical model predictions are in good agreement.
Resumo:
The energy bandgap of GaInP solar cells can be tuned by modifying the degree of order of the alloy. In this study, we employed Sb to increase the energy bandgap of the GaInP and analyzed its impact on the performance of GaInP solar cells. An effective change in the cutoff wavelength of the external quantum efficiency of GaInP solar cells and an effective increase of 50 mV in the open-circuit voltage of GaInP/Ga(In)As/Ge triple junction solar cells were obtained with the use of Sb. Copyright © 2016 John Wiley & Sons, Ltd.
Resumo:
El principal objetivo de esta tesis es el desarrollo de métodos de síntesis de diagramas de radiación de agrupaciones de antenas, en donde se realiza una caracterización electromagnética rigurosa de los elementos radiantes y de los acoplos mutuos existentes. Esta caracterización no se realiza habitualmente en la gran mayoría de métodos de síntesis encontrados en la literatura, debido fundamentalmente a dos razones. Por un lado, se considera que el diagrama de radiación de un array de antenas se puede aproximar con el factor de array que únicamente tiene en cuenta la posición de los elementos y las excitaciones aplicadas a los mismos. Sin embargo, como se mostrará en esta tesis, en múltiples ocasiones un riguroso análisis de los elementos radiantes y del acoplo mutuo entre ellos es importante ya que los resultados obtenidos pueden ser notablemente diferentes. Por otro lado, no es sencillo combinar un método de análisis electromagnético con un proceso de síntesis de diagramas de radiación. Los métodos de análisis de agrupaciones de antenas suelen ser costosos computacionalmente, ya que son estructuras grandes en términos de longitudes de onda. Generalmente, un diseño de un problema electromagnético suele comprender varios análisis de la estructura, dependiendo de las variaciones de las características, lo que hace este proceso muy costoso. Dos métodos se utilizan en esta tesis para el análisis de los arrays acoplados. Ambos están basados en el método de los elementos finitos, la descomposición de dominio y el análisis modal para analizar la estructura radiante y han sido desarrollados en el grupo de investigación donde se engloba esta tesis. El primero de ellos es una técnica de análisis de arrays finitos basado en la aproximación de array infinito. Su uso es indicado para arrays planos de grandes dimensiones con elementos equiespaciados. El segundo caracteriza el array y el acoplo mutuo entre elementos a partir de una expansión en modos esféricos del campo radiado por cada uno de los elementos. Este método calcula los acoplos entre los diferentes elementos del array usando las propiedades de traslación y rotación de los modos esféricos. Es capaz de analizar agrupaciones de elementos distribuidos de forma arbitraria. Ambas técnicas utilizan una formulación matricial que caracteriza de forma rigurosa el campo radiado por el array. Esto las hace muy apropiadas para su posterior uso en una herramienta de diseño, como los métodos de síntesis desarrollados en esta tesis. Los resultados obtenidos por estas técnicas de síntesis, que incluyen métodos rigurosos de análisis, son consecuentemente más precisos. La síntesis de arrays consiste en modificar uno o varios parámetros de las agrupaciones de antenas buscando unas determinadas especificaciones de las características de radiación. Los parámetros utilizados como variables de optimización pueden ser varios. Los más utilizados son las excitaciones aplicadas a los elementos, pero también es posible modificar otros parámetros de diseño como son las posiciones de los elementos o las rotaciones de estos. Los objetivos de las síntesis pueden ser dirigir el haz o haces en una determinada dirección o conformar el haz con formas arbitrarias. Además, es posible minimizar el nivel de los lóbulos secundarios o del rizado en las regiones deseadas, imponer nulos que evitan posibles interferencias o reducir el nivel de la componente contrapolar. El método para el análisis de arrays finitos basado en la aproximación de array infinito considera un array finito como un array infinito con un número finito de elementos excitados. Los elementos no excitados están físicamente presentes y pueden presentar tres diferentes terminaciones, corto-circuito, circuito abierto y adaptados. Cada una de estas terminaciones simulará mejor el entorno real en el que el array se encuentre. Este método de análisis se integra en la tesis con dos métodos diferentes de síntesis de diagramas de radiación. En el primero de ellos se presenta un método basado en programación lineal en donde es posible dirigir el haz o haces, en la dirección deseada, además de ejercer un control sobre los lóbulos secundarios o imponer nulos. Este método es muy eficiente y obtiene soluciones óptimas. El mismo método de análisis es también aplicado a un método de conformación de haz, en donde un problema originalmente no convexo (y de difícil solución) es transformado en un problema convexo imponiendo restricciones de simetría, resolviendo de este modo eficientemente un problema complejo. Con este método es posible diseñar diagramas de radiación con haces de forma arbitraria, ejerciendo un control en el rizado del lóbulo principal, así como en el nivel de los lóbulos secundarios. El método de análisis de arrays basado en la expansión en modos esféricos se integra en la tesis con tres técnicas de síntesis de diagramas de radiación. Se propone inicialmente una síntesis de conformación del haz basado en el método de la recuperación de fase resuelta de forma iterativa mediante métodos convexos, en donde relajando las restricciones del problema original se consiguen unas soluciones cercanas a las óptimas de manera eficiente. Dos métodos de síntesis se han propuesto, donde las variables de optimización son las posiciones y las rotaciones de los elementos respectivamente. Se define una función de coste basada en la intensidad de radiación, la cual es minimizada de forma iterativa con el método del gradiente. Ambos métodos reducen el nivel de los lóbulos secundarios minimizando una función de coste. El gradiente de la función de coste es obtenido en términos de la variable de optimización en cada método. Esta función de coste está formada por la expresión rigurosa de la intensidad de radiación y por una función de peso definida por el usuario para imponer prioridades sobre las diferentes regiones de radiación, si así se desea. Por último, se presenta un método en el cual, mediante técnicas de programación entera, se buscan las fases discretas que generan un diagrama de radiación lo más cercano posible al deseado. Con este método se obtienen diseños que minimizan el coste de fabricación. En cada uno de las diferentes técnicas propuestas en la tesis, se presentan resultados con elementos reales que muestran las capacidades y posibilidades que los métodos ofrecen. Se comparan los resultados con otros métodos disponibles en la literatura. Se muestra la importancia de tener en cuenta los diagramas de los elementos reales y los acoplos mutuos en el proceso de síntesis y se comparan los resultados obtenidos con herramientas de software comerciales. ABSTRACT The main objective of this thesis is the development of optimization methods for the radiation pattern synthesis of array antennas in which a rigorous electromagnetic characterization of the radiators and the mutual coupling between them is performed. The electromagnetic characterization is usually overlooked in most of the available synthesis methods in the literature, this is mainly due to two reasons. On the one hand, it is argued that the radiation pattern of an array is mainly influenced by the array factor and that the mutual coupling plays a minor role. As it is shown in this thesis, the mutual coupling and the rigorous characterization of the array antenna influences significantly in the array performance and its computation leads to differences in the results obtained. On the other hand, it is difficult to introduce an analysis procedure into a synthesis technique. The analysis of array antennas is generally expensive computationally as the structure to analyze is large in terms of wavelengths. A synthesis method requires to carry out a large number of analysis, this makes the synthesis problem very expensive computationally or intractable in some cases. Two methods have been used in this thesis for the analysis of coupled antenna arrays, both of them have been developed in the research group in which this thesis is involved. They are based on the finite element method (FEM), the domain decomposition and the modal analysis. The first one obtains a finite array characterization with the results obtained from the infinite array approach. It is specially indicated for the analysis of large arrays with equispaced elements. The second one characterizes the array elements and the mutual coupling between them with a spherical wave expansion of the radiated field by each element. The mutual coupling is computed using the properties of translation and rotation of spherical waves. This method is able to analyze arrays with elements placed on an arbitrary distribution. Both techniques provide a matrix formulation that makes them very suitable for being integrated in synthesis techniques, the results obtained from these synthesis methods will be very accurate. The array synthesis stands for the modification of one or several array parameters looking for some desired specifications of the radiation pattern. The array parameters used as optimization variables are usually the excitation weights applied to the array elements, but some other array characteristics can be used as well, such as the array elements positions or rotations. The desired specifications may be to steer the beam towards any specific direction or to generate shaped beams with arbitrary geometry. Further characteristics can be handled as well, such as minimize the side lobe level in some other radiating regions, to minimize the ripple of the shaped beam, to take control over the cross-polar component or to impose nulls on the radiation pattern to avoid possible interferences from specific directions. The analysis method based on the infinite array approach considers an infinite array with a finite number of excited elements. The infinite non-excited elements are physically present and may have three different terminations, short-circuit, open circuit and match terminated. Each of this terminations is a better simulation for the real environment of the array. This method is used in this thesis for the development of two synthesis methods. In the first one, a multi-objective radiation pattern synthesis is presented, in which it is possible to steer the beam or beams in desired directions, minimizing the side lobe level and with the possibility of imposing nulls in the radiation pattern. This method is very efficient and obtains optimal solutions as it is based on convex programming. The same analysis method is used in a shaped beam technique in which an originally non-convex problem is transformed into a convex one applying symmetry restrictions, thus solving a complex problem in an efficient way. This method allows the synthesis of shaped beam radiation patterns controlling the ripple in the mainlobe and the side lobe level. The analysis method based on the spherical wave expansion is applied for different synthesis techniques of the radiation pattern of coupled arrays. A shaped beam synthesis is presented, in which a convex formulation is proposed based on the phase retrieval method. In this technique, an originally non-convex problem is solved using a relaxation and solving a convex problems iteratively. Two methods are proposed based on the gradient method. A cost function is defined involving the radiation intensity of the coupled array and a weighting function that provides more degrees of freedom to the designer. The gradient of the cost function is computed with respect to the positions in one of them and the rotations of the elements in the second one. The elements are moved or rotated iteratively following the results of the gradient. A highly non-convex problem is solved very efficiently, obtaining very good results that are dependent on the starting point. Finally, an optimization method is presented where discrete digital phases are synthesized providing a radiation pattern as close as possible to the desired one. The problem is solved using linear integer programming procedures obtaining array designs that greatly reduce the fabrication costs. Results are provided for every method showing the capabilities that the above mentioned methods offer. The results obtained are compared with available methods in the literature. The importance of introducing a rigorous analysis into the synthesis method is emphasized and the results obtained are compared with a commercial software, showing good agreement.
Resumo:
This paper studies the recombination at the perimeter in the subcells that constitute a GaInP/GaAs/Ge lattice-matched triple-junction solar cell. For that, diodes of different sizes and consequently different perimeter/area ratios have been manufactured in single-junction solar cells resembling the subcells in a triple-junction solar cell. It has been found that neither in GaInP nor in Ge solar cells the recombination at the perimeter is significant in devices as small as 500 μm × 500μm(2.5 ⋅ 10 − 3 cm2) in GaInP and 250μm × 250μm (6.25 ⋅ 10 − 4cm2) in Ge. However, in GaAs, the recombination at the perimeter is not negligible at low voltages even in devices as large as 1cm2, and it is the main limiting recombination factor in the open circuit voltage even at high concentrations in solar cells of 250 μm × 250μm (6.25 ⋅ 10 − 4 cm2) or smaller. Therefore, the recombination at the perimeter in GaAs should be taken into account when optimizing triple-junction solar cells.
Resumo:
The segmental approach has been considered to analyze dark and light I-V curves. The photovoltaic (PV) dependence of the open-circuit voltage (Voc), the maximum power point voltage (Vm), the efficiency (?) on the photogenerated current (Jg), or on the sunlight concentration ratio (X), are analyzed, as well as other photovoltaic characteristics of multijunction solar cells. The characteristics being analyzed are split into monoexponential (linear in the semilogarithmic scale) portions, each of which is characterized by a definite value of the ideality factor A and preexponential current J0. The monoexponentiality ensures advantages, since at many steps of the analysis, one can use the analytical dependences instead of numerical methods. In this work, an experimental procedure for obtaining the necessary parameters has been proposed, and an analysis of GaInP/GaInAs/Ge triple-junction solar cell characteristics has been carried out. It has been shown that up to the sunlight concentration ratios, at which the efficiency maximum is achieved, the results of calculation of dark and light I-V curves by the segmental method fit well with the experimental data. An important consequence of this work is the feasibility of acquiring the resistanceless dark and light I-V curves, which can be used for obtaining the I-V curves characterizing the losses in the transport part of a solar cell.
Resumo:
Open source is a software development paradigm that has seen a huge rise in recent years. It reduces IT costs and time to market, while increasing security and reliability. However, the difficulty in integrating developments from different communities and stakeholders prevents this model from reaching its full potential. This is mainly due to the challenge of determining and locating the correct dependencies for a given software artifact. To solve this problem we propose the development of an extensible software component repository based upon models. This repository should be capable of solving the dependencies between several components and work with already existing repositories to access the needed artifacts transparently. This repository will also be easily expandable, enabling the creation of modules that support new kinds of dependencies or other existing repository technologies. The proposed solution will work with OSGi components and use OSGi itself.