Effect of Sb on the quantum efficiency of GaInP solar cells


Autoria(s): Barrigón Montañés, Enrique; Barrutia Poncela, Laura; Ochoa Gómez, Mario; Rey-Stolle Prado, Ignacio; Algora del Valle, Carlos
Data(s)

18/04/2016

31/12/1969

Resumo

The energy bandgap of GaInP solar cells can be tuned by modifying the degree of order of the alloy. In this study, we employed Sb to increase the energy bandgap of the GaInP and analyzed its impact on the performance of GaInP solar cells. An effective change in the cutoff wavelength of the external quantum efficiency of GaInP solar cells and an effective increase of 50 mV in the open-circuit voltage of GaInP/Ga(In)As/Ge triple junction solar cells were obtained with the use of Sb. Copyright © 2016 John Wiley & Sons, Ltd.

Formato

application/pdf

Identificador

http://oa.upm.es/40137/

Idioma(s)

eng

Relação

http://oa.upm.es/40137/1/PIP2777_Postprint.pdf

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pip.2777/abstract

TEC2014-54260-C3-1-P

TEC2012-37286

RTC-2015-3747-3

S2013/MAE-2780

info:eu-repo/semantics/altIdentifier/doi/10.1002/pip.2777

Direitos

http://creativecommons.org/licenses/by-nc-nd/3.0/es/

info:eu-repo/semantics/embargoedAccess

Fonte

Progress in Photovoltaics: Research and Applications, ISSN 1062-7995, 2016-04-18

Palavras-Chave #Energías Renovables
Tipo

info:eu-repo/semantics/article

Artículo

NonPeerReviewed