Theoretical Stark broadening parameters for spectral lines arising from the 2p5ns, 2p5np and 2p5nd electronic configurations of MgIII

In the present work we report theoretical Stark widths and shifts calculated using the Griem semi-empirical approach, corresponding to 237 spectral lines of MgIII. Data are presented for an electron density of 1017 cm?3 and temperatures T = 0.5?10.0 (104 K). The matrix elements used in these calculations have been determined from 23 configurations of MgIII: 2s22p6, 2s22p53p, 2s22p54p, 2s22p54f and 2s22p55f for even parity and 2s22p5ns (n = 3?6), 2s22p5nd (n = 3?9), 2s22p55g and 2s2p6np (n = 3?8) for odd parity. For the intermediate coupling (IC) calculations, we use the standard method of least-squares fitting from experimental energy levels by means of the Cowan computer code. Also, in order to test the matrix elements used in our calculations, we present calculated values of 70 transition probabilities of MgIII spectral lines and 14 calculated values of radiative lifetimes of MgIII levels. There is good agreement between our calculations and experimental radiative lifetimes. Spectral lines of MgIII are relevant in astrophysics and also play an important role in the spectral analysis of laboratory plasma. Theoretical trends of the Stark broadening parameter versus the temperature for relevant lines are presented. No values of Stark parameters can be found in the bibliography.

Technology of bare tether current collection

The outstanding problem for useful applications of electrodynamic tethers is obtaining sufficient electron current from the ionospheric plasma. Bare tether collectors, in which the conducting tether itself, left uninsulated over kilometers of its length, acts as the collecting anode, promise to attain currents of 10 A or more from reasonably sized systems. Current collection by a bare tether is also relatively insensitive to drops in electron density, which are regularly encountered on each revolution of an orbit. This makes nighttime operation feasible. We show how the bare tether's high efficiency of current collection and ability to adjust to density variations follow from the orbital motion limited collection law of thin cylinders. We consider both upwardly deployed (power generation mode) and downwardly deployed (reboost mode) tethers, and present results that indicate how bare tether systems would perform as their magnetic and plasma environment varies in low earth orbit.

Efficiency of different types of ED-tether thrusters

The efficiencies of electrodynamic-tether (EDT) thrusters made of single bare tethers with different types of cross sections, several parallel bare tethers, or a fully insulated tether with a three-dimensional passive end-collector, are discussed. Current collection, mass, and ohmic resistance considerations are balanced against each other in discussing efficiencies. Use is made of recent results on the validity domain of orbital-motion-limited (OML) collection, the current law beyond that domain, and interference effects between parallel bare tethers; and on current adjustment to variations in electron density encountered in orbit. Comparisons between EDT thrusters and electrical thrusters in terms of the ratio of dedicated mass to the total mission impulse show EDT to be superior for mission times over 50-100 days.

Performance of bare-tether systems under varying magnetic and plasma conditions

Electrodynamic tethered systems, in which an exposed portion of the conducting tether itself collects electrons from the ionosphere, promise to attain currents of 10 A or more in low Earth orbit. For the first time, another desirable feature of such bare-tether systems is reported and analyzed in detail: Collection by a bare tether is relatively insensitive to variations in electron density that are regularly encountered on each revolution of an orbit. This self-adjusting property of bare-tether systems occurs because the electron-collecting area on the tether is not fixed, but extends along its positively biased portion, and because the current varies as collecting length to a power greater than unity. How this adjustment to density variations follows from the basic collection law of thin cylinders is shown. The effect of variations in the motionally induced tether voltage is also analyzed. Both power and thruster modes are considered. The performance of bare-tether systems to tethered systems is compared using passive spherical collectors of fixed area, taking into consideration recent experimental results. Calculations taking into account motional voltage and plasma density around a realistic orbit for bare-tether systems suitable for space station applications are also presented.

Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures

In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface.

Non-Maxwellian electron distributions in time-dependent simulations of low-Z materials illuminated by a high-intensity X-ray laser

The interaction of high intensity X-ray lasers with matter is modeled. A collisional-radiative timedependent module is implemented to study radiation transport in matter from ultrashort and ultraintense X-ray bursts. Inverse bremsstrahlung absorption by free electrons, electron conduction or hydrodynamic effects are not considered. The collisional-radiative system is coupled with the electron distribution evolution treated with a Fokker-Planck approach with additional inelastic terms. The model includes spontaneous emission, resonant photoabsorption, collisional excitation and de-excitation, radiative recombination, photoionization, collisional ionization, three-body recombination, autoionization and dielectronic capture. It is found that for high densities, but still below solid, collisions play an important role and thermalization times are not short enough to ensure a thermal electron distribution. At these densities Maxwellian and non-Maxwellian electron distribution models yield substantial differences in collisional rates, modifying the atomic population dynamics.

Electron transport and azimuthal oscillations in hall thrusters

The Hall Effect Thruster (HET) is a type of satellite electric propulsion device initially developed in the 1960’s independently by USA and the former USSR. The development continued in the shadow during the 1970’s in the Soviet Union to reach a mature status from the technological point of view in the 1980’s. In the 1990’s the advanced state of this Russian technology became known in western countries, which rapidly restarted the analysis and development of modern Hall thrusters. Currently, there are several companies in USA, Russia and Europe manufacturing Hall thrusters for operational use. The main applications of these thrusters are low-thrust propulsion of interplanetary probes, orbital raising of satellites and stationkeeping of geostationary satellites. However, despite the well proven in-flight experience, the physics of the Hall Thruster are not completely understood yet. Over the last two decades large efforts have been dedicated to the understanding of the physics of Hall Effect thrusters. However, the so-called anomalous diffusion, short name for an excessive electron conductivity along the thruster, is not yet fully understood as it cannot be explained with classical collisional theories. One commonly accepted explanation is the existence of azimuthal oscillations with correlated plasma density and electric field fluctuations. In fact, there is experimental evidence of the presence of an azimuthal oscillation in the low frequency range (a few kHz). This oscillation, usually called spoke, was first detected empirically by Janes and Lowder in the 1960s. More recently several experiments have shown the existence of this type of oscillation in various modern Hall thrusters. Given the frequency range, it is likely that the ionization is the cause of the spoke oscillation, like for the breathing mode oscillation. In the high frequency range (a few MHz), electron-drift azimuthal oscillations have been detected in recent experiments, in line with the oscillations measured by Esipchuk and Tilinin in the 1970’s. Even though these low and high frequency azimuthal oscillations have been known for quite some time already, the physics behind them are not yet clear and their possible relation with the anomalous diffusion process remains an unknown. This work aims at analysing from a theoretical point of view and via computer simulations the possible relation between the azimuthal oscillations and the anomalous electron transport in HET. In order to achieve this main objective, two approaches are considered: local linear stability analyses and global linear stability analyses. The use of local linear stability analyses shall allow identifying the dominant terms in the promotion of the oscillations. However, these analyses do not take into account properly the axial variation of the plasma properties along the thruster. On the other hand, global linear stability analyses do account for these axial variations and shall allow determining how the azimuthal oscillations are promoted and their possible relation with the electron transport.

Ti/Pd/Ag Contacts to n-Type GaAs for High Current Density Devices

The metallization stack Ti/Pd/Ag on n-type Si has been readily used in solar cells due to its low metal/semiconductor specific contact resistance, very high sheet conductance, bondability, long-term durability, and cost-effectiveness. In this study, the use of Ti/Pd/Ag metallization on n-type GaAs is examined, targeting electronic devices that need to handle high current densities and with grid-like contacts with limited surface coverage (i.e., solar cells, lasers, or light emitting diodes). Ti/Pd/Ag (50 nm/50 nm/1000 nm) metal layers were deposited on n-type GaAs by electron beam evaporation and the contact quality was assessed for different doping levels (from 1.3 × 1018 cm−3 to 1.6 × 1019 cm−3) and annealing temperatures (from 300°C to 750°C). The metal/semiconductor specific contact resistance, metal resistivity, and the morphology of the contacts were studied. The results show that samples doped in the range of 1018 cm−3 had Schottky-like I–V characteristics and only samples doped 1.6 × 1019 cm−3 exhibited ohmic behavior even before annealing. For the ohmic contacts, increasing annealing temperature causes a decrease in the specific contact resistance (ρ c,Ti/Pd/Ag ~ 5 × 10−4 Ω cm2). In regard to the metal resistivity, Ti/Pd/Ag metallization presents a very good metal conductivity for samples treated below 500°C (ρ M,Ti/Pd/Ag ~ 2.3 × 10−6 Ω cm); however, for samples treated at 750°C, metal resistivity is strongly degraded due to morphological degradation and contamination in the silver overlayer. As compared to the classic AuGe/Ni/Au metal system, the Ti/Pd/Ag system shows higher metal/semiconductor specific contact resistance and one order of magnitude lower metal resistivity.

Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

Room temperature electroreflectance (ER) spectroscopy has been used to study the fundamental properties of AlxInyGa${}_{1-x-y}$N/AlN/GaN heterostructures under different applied bias. The (0001)-oriented heterostructures were grown by metal-organic vapor phase epitaxy on sapphire. The band gap energy of the AlxInyGa${}_{1-x-y}{\rm{N}}$ layers has been determined from analysis of the ER spectra using Aspnes' model. The obtained values are in good agreement with a nonlinear band gap interpolation equation proposed earlier. Bias-dependent ER allows one to determine the sheet carrier density of the two-dimensional electron gas and the barrier field strength.