Bloche-Maxwell treatment of amplification of high harmonic seed in soft x-ray laser amplifiers in both direct and chirped amplifications

Seeding plasma-based softx-raylaser (SXRL) demonstrated diffraction-limited, fully coherent in space and in time beam but with energy not exceeding 1 μJ per pulse. Quasi-steady-state (QSS) plasmas demonstrated to be able to store high amount of energy and then amplify incoherent SXRL up to several mJ. Using 1D time-dependant Bloch–Maxwell model including amplification of noise, we demonstrated that femtosecond HHG cannot be efficiently amplified in QSS plasmas. However, using Chirped Pulse Amplification concept on HHG seed allows to extract most of the stored energy, reaching up to 5 mJ in fully coherent pulses that can be compressed down to 130 fs.

MicroRaman Spectroscopy of Si Nanowires: Influence of Size

Si Nanowires (NWs) were studied by Raman microspectroscopy. The Raman spectrum of the NWs reveals important thermal effects, which broaden and shift the one phonon Raman bands. The low thermal conductivity of the NWs and the low thermal dissipation are responsible for the temperature enhancement in the NW under the excitation with the laser beam. We have modeled, using finite element methods, the interaction between the laser beam and the NWs. The Raman spectrum of Si NWs is interpreted in terms of the temperature induced by the laser beam excitation, in correlation with finite element methods (fem) for studying the interaction between the laser beam and the NWs.

Simultaneously measuring two ultrashort laser pulses on a single-shot using double-blind frequency-resolved optical gating

We demonstrate a simple self-referenced single-shot method for simultaneously measuring two different arbitrary pulses, which can potentially be complex and also have very different wavelengths. The method is a variation of cross-correlation frequency-resolved optical gating (XFROG) that we call double-blind (DB) FROG. It involves measuring two spectrograms, both of which are obtained simultaneously in a single apparatus. DB FROG retrieves both pulses robustly by using the standard XFROG algorithm, implemented alternately on each of the traces, taking one pulse to be ?known? and solving for the other. We show both numerically and experimentally that DB FROG using a polarization-gating beam geometry works reliably and appears to have no nontrivial ambiguities.

Laser Driven Neutron Sources: Characteristics, Applications and Prospects

The basics of laser driven neutron sources, properties and possible applications are discussed. We describe the laser driven nuclear processes which trigger neutron generation, namely, nuclear reactions induced by laser driven ion beam (ion n), thermonuclear fusion by implosion and photo-induced nuclear (gamma n) reactions. Based on their main properties, i.e. point source (<100 μm) and short durations (< ns), different applications are described, such as radiography, time-resolved spectroscopy and pump-probe experiments. Prospects on the development of laser technology suggest that, as higher intensities and higher repetition rate lasers become available (for example, using DPSSL technology), laser driven methodologies may provide neutron fluxes comparable to that achieved by accelerator driven neutron sources in the near future.

Open-atmosphere structural depth profiling of multilayer samples of photovoltaic interest using laser-induced plasma spectrometry

The present work aims to assess Laser-Induced Plasma Spectrometry (LIPS) as a tool for the characterization of photovoltaic materials. Despite being a well-established technique with applications to many scientific and industrial fields, so far LIPS is little known to the photovoltaic scientific community. The technique allows the rapid characterization of layered samples without sample preparation, in open atmosphere and in real time. In this paper, we assess LIPS ability for the determination of elements that are difficult to analyze by other broadly used techniques, or for producing analytical information from very low-concentration elements. The results of the LIPS characterization of two different samples are presented: 1) a 90 nm, Al-doped ZnO layer deposited on a Si substrate by RF sputtering and 2) a Te-doped GaInP layer grown on GaAs by Metalorganic Vapor Phase Epitaxy. For both cases, the depth profile of the constituent and dopant elements is reported along with details of the experimental setup and the optimization of key parameters. It is remarkable that the longest time of analysis was ∼10 s, what, in conjunction with the other characteristics mentioned, makes of LIPS an appealing technique for rapid screening or quality control whether at the lab or at the production line.

Self-similar motion of laser half-space plasmas. II. Thermal waves and intermediate regimes

The one-dimensional self-similar motion of an initially cold, half-space plasma of electron density n,produced by the (anomalous) absorption of a laser pulse of irradiation

Using results previously found for a>€~4'3, a qualitative discussion of how plasma behavior changes with a, is given.

Self-similar expansion of laser plasmas with nonlocal heat flux

A previous hydrodynamic model of the expansion of a laser-produced plasma, using classical (Spitzer) heat flux, is reconsidered with a nonlocal heat flux model. The nonlocal law is shown to be valid beyond the range of validity of the classical law, breaking down ultimately, however, in agreement with recent predictions.

Experimental and numerical study of cw green laser crystallization of a-Si:H thin films

Crystallization and grain growth technique of thin film silicon are among the most promising methods for improving efficiency and lowering cost of solar cells. A major advantage of laser crystallization and annealing over conventional heating methods is its ability to limit rapid heating and cooling to thin surface layers. Laser energy is used to heat the amorphous silicon thin film, melting it and changing the microstructure to polycrystalline silicon (poly-Si) as it cools. Depending on the laser density, the vaporization temperature can be reached at the center of the irradiated area. In these cases ablation effects are expected and the annealing process becomes ineffective. The heating process in the a-Si thin film is governed by the general heat transfer equation. The two dimensional non-linear heat transfer equation with a moving heat source is solve numerically using the finite element method (FEM), particularly COMSOL Multiphysics. The numerical model help to establish the density and the process speed range needed to assure the melting and crystallization without damage or ablation of the silicon surface. The samples of a-Si obtained by physical vapour deposition were irradiated with a cw-green laser source (Millennia Prime from Newport-Spectra) that delivers up to 15 W of average power. The morphology of the irradiated area was characterized by confocal laser scanning microscopy (Leica DCM3D) and Scanning Electron Microscopy (SEM Hitachi 3000N). The structural properties were studied by micro-Raman spectroscopy (Renishaw, inVia Raman microscope).

High-Power High-Efficiency Laser Power Transmission at 100m Using Optimized Multi-Cell GaAs Converter

A high-power high-efficiency laser power transmission system at 100m based on an optimized multi-cell GaAs converter capable of supplying 9.7W of electricity is demonstrated. An I-V testing system integrated with a data acquisition circuit and an analysis software is designed to measure the efficiency and the I-V characteristics of the laser power converter (LPC). The dependencies of the converter’s efficiency with respect to wavelength, laser intensity and temperature are analyzed. A diode laser with 793nm of wavelength and 24W of power is used to test the LPC and the software. The maximum efficiency of the LPC is 48.4% at an input laser power of 8W at room temperature. When the input laser power is 24W (laser intensity of 60000W/m2), the efficiency is 40.4% and the output voltage is 4 V. The overall efficiency from electricity to electricity is 11.6%.

Detection of peanut traces in wheat flour through NIR hyperspectral imaging spectroscopy

- NIR Hyperspectral images (1000-2200 nm) allowed the detection of peanut traces down to adulteration percentages 0.01 % - Determination coefficient of R2= 0.946 was found for the quantification of peanut adulteration from 10% to 0.1%. - The obtained results shows the feasibility of using HSI systems for the detection of peanut traces in conjuction with chemical procedures, such as RT-PCR and ELISA to facilitate quality control surveyance on food product processing lines.

Characterization of Cavities Using the GPR, LIDAR and GNSS Techniques

The study of the many types of natural and manmade cavities in different parts of the world is important to the fields of geology, geophysics, engineering, architectures, agriculture, heritages and landscape. Ground-penetrating radar (GPR) is a noninvasive geodetection and geolocation technique suitable for accurately determining buried structures. This technique requires knowing the propagation velocity of electromagnetic waves (EM velocity) in the medium. We propose a method for calibrating the EM velocity using the integration of laser imaging detection and ranging (LIDAR) and GPR techniques using the Global Navigation Satellite System (GNSS) as support for geolocation. Once the EM velocity is known and the GPR profiles have been properly processed and migrated, they will also show the hidden cavities and the old hidden structures from the cellar. In this article, we present a complete study of the joint use of the GPR, LIDAR and GNSS techniques in the characterization of cavities. We apply this methodology to study underground cavities in a group of wine cellars located in Atauta (Soria, Spain). The results serve to identify construction elements that form the cavity and group of cavities or cellars. The described methodology could be applied to other shallow underground structures with surface connection, where LIDAR and GPR profiles could be joined, as, for example, in archaeological cavities, sewerage systems, drainpipes, etc.

Study of a-Si crystallization dependence on power and irradiation time using a CW green laser

An advantage of laser crystallization over conventional heating methods is its ability to limit rapid heating and cooling to thin surface layers. Laser energy is used to heat the a-Si thin film to change the microstructure to poly-Si. Thin film samples of a-Si were irradiated with a CW-green laser source. Laser irradiated spots were produced by using different laser powers and irradiation times. These parameters are identified as key variables in the crystallization process. The power threshold for crystallization is reduced as the irradiation time is increased. When this threshold is reached the crystalline fraction increases lineally with power for each irradiation time. The experimental results are analysed with the aid of a numerical thermal model and the presence of two crystallization mechanisms are observed: one due to melting and the other due to solid phase transformation.

Silicon PV module customization using laser technology for new BIPV applications

It is well known that lasers have helped to increase efficiency and to reduce production costs in the photovoltaic (PV) sector in the last two decades, appearing in most cases as the ideal tool to solve some of the critical bottlenecks of production both in thin film (TF) and crystalline silicon (c-Si) technologies. The accumulated experience in these fields has brought as a consequence the possibility of using laser technology to produce new Building Integrated Photovoltaics (BIPV) products with a high degree of customization. However, to produce efficiently these personalized products it is necessary the development of optimized laser processes able to transform standard products in customized items oriented to the BIPV market. In particular, the production of semitransparencies and/or freeform geometries in TF a-Si modules and standard c-Si modules is an application of great interest in this market. In this work we present results of customization of both TF a-Si modules and standard monocrystalline (m-Si) and policrystalline silicon (pc-Si) modules using laser ablation and laser cutting processes. A discussion about the laser processes parameterization to guarantee the functionality of the device is included. Finally some examples of final devices are presented with a full discussion of the process approach used in their fabrication.

Measurement of plasma electron density generated in an experiment of laser shock processing, utilizing the H­α­-line

In this work we have realized plasma diagnosis produced by Laser (LPP), by means of emission spectroscopy in a Laser Shock Processing (LSP). The LSP has been proposed as an alternative technology, competitive with classical surface treatments. The ionic species present in the plasma together with electron density and its temperature provide significant indicators of the degree of surface effect of the treated material. In order to analyze these indicators, we have realized spectroscopic studies of optical emission in the laser-generated plasmas in different situations. We have worked focusing on an aluminum sample (Al2024) in air and/or in LSP conditions (water flow) a Q-switched laser of Nd:YAG (λ = 1.06 μm, 10 ns of pulse duration, running at 10 Hz repetition rate). The pulse energy was set at 2,5 J per pulse. The electron density has been measured using, in every case, the Stark broadening of H Balmer α line (656.27 nm). In the case of the air, this measure has been contrasted with the value obtained with the line of 281.62 nm of Al II. Special attention has been paid to the self-absorption of the spectral lines used. The measures were realized with different delay times after the pulse of the laser (1–8 μs) and with a time window of 1 μs. In LSP the electron density obtained was between 1017 cm−3 for the shortest delays (4–6 μs), and 1016 cm−3 for the greatest delays (7,8 μs).